IT1109829B - Processo di fabbricazione di cercuiti integrati - Google Patents
Processo di fabbricazione di cercuiti integratiInfo
- Publication number
- IT1109829B IT1109829B IT24892/78A IT2489278A IT1109829B IT 1109829 B IT1109829 B IT 1109829B IT 24892/78 A IT24892/78 A IT 24892/78A IT 2489278 A IT2489278 A IT 2489278A IT 1109829 B IT1109829 B IT 1109829B
- Authority
- IT
- Italy
- Prior art keywords
- findings
- integrated
- building process
- building
- integrated findings
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81294177A | 1977-07-05 | 1977-07-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7824892A0 IT7824892A0 (it) | 1978-06-23 |
IT1109829B true IT1109829B (it) | 1985-12-23 |
Family
ID=25211042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT24892/78A IT1109829B (it) | 1977-07-05 | 1978-06-23 | Processo di fabbricazione di cercuiti integrati |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0001038B1 (it) |
JP (1) | JPS5414680A (it) |
DE (1) | DE2860999D1 (it) |
IT (1) | IT1109829B (it) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2922416A1 (de) * | 1979-06-01 | 1980-12-11 | Ibm Deutschland | Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung |
DE3070833D1 (en) * | 1980-09-19 | 1985-08-08 | Ibm Deutschland | Structure with a silicon body that presents an aperture and method of making this structure |
EP0061787B1 (de) * | 1981-03-02 | 1985-11-21 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Verfahren zum Dotieren von Trägern aus Silicium für die Halbleiterfertigung |
DE3176643D1 (en) * | 1981-10-30 | 1988-03-10 | Ibm Deutschland | Shadow projecting mask for ion implantation and lithography by ion beam radiation |
US4482427A (en) * | 1984-05-21 | 1984-11-13 | International Business Machines Corporation | Process for forming via holes having sloped walls |
EP0168510B1 (de) * | 1984-07-16 | 1989-01-18 | Ibm Deutschland Gmbh | Verfahren zur Reparatur von Transmissionsmasken |
EP0237844A1 (de) * | 1986-03-18 | 1987-09-23 | BBC Brown Boveri AG | Verfahren zur Herstellung einer Abdeckschicht für die Halbleitertechnik sowie Verwendung der Abdeckschicht |
US5234781A (en) * | 1988-11-07 | 1993-08-10 | Fujitsu Limited | Mask for lithographic patterning and a method of manufacturing the same |
JP2725319B2 (ja) * | 1988-11-07 | 1998-03-11 | 富士通株式会社 | 荷電粒子線マスクの製造方法 |
US4919749A (en) * | 1989-05-26 | 1990-04-24 | Nanostructures, Inc. | Method for making high resolution silicon shadow masks |
JP2506019B2 (ja) * | 1991-04-25 | 1996-06-12 | 富士通株式会社 | 透過マスクの製造方法 |
US5326426A (en) * | 1991-11-14 | 1994-07-05 | Tam Andrew C | Undercut membrane mask for high energy photon patterning |
US6335534B1 (en) | 1998-04-17 | 2002-01-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
DE10017422A1 (de) | 2000-04-07 | 2001-10-11 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungverfahren |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1235077A (en) * | 1969-05-07 | 1971-06-09 | Standard Telephones Cables Ltd | Improvements in or relating to pressure transducers |
US4013502A (en) * | 1973-06-18 | 1977-03-22 | Texas Instruments Incorporated | Stencil process for high resolution pattern replication |
DE2359511C2 (de) * | 1973-11-29 | 1987-03-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen |
US4021276A (en) * | 1975-12-29 | 1977-05-03 | Western Electric Company, Inc. | Method of making rib-structure shadow mask for ion implantation |
-
1978
- 1978-06-23 IT IT24892/78A patent/IT1109829B/it active
- 1978-06-28 JP JP7755378A patent/JPS5414680A/ja active Granted
- 1978-07-03 EP EP78100294A patent/EP0001038B1/de not_active Expired
- 1978-07-03 DE DE7878100294T patent/DE2860999D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0001038A1 (de) | 1979-03-21 |
JPS6158974B2 (it) | 1986-12-13 |
JPS5414680A (en) | 1979-02-03 |
DE2860999D1 (en) | 1981-11-26 |
IT7824892A0 (it) | 1978-06-23 |
EP0001038B1 (de) | 1981-09-02 |
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