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IN2014DE00468A - - Google Patents

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Publication number
IN2014DE00468A
IN2014DE00468A IN468DE2014A IN2014DE00468A IN 2014DE00468 A IN2014DE00468 A IN 2014DE00468A IN 468DE2014 A IN468DE2014 A IN 468DE2014A IN 2014DE00468 A IN2014DE00468 A IN 2014DE00468A
Authority
IN
India
Prior art keywords
thin film
pzt
composition
baking
particle size
Prior art date
Application number
Inventor
Toshihiro Doi
Hideaki Sakurai
Nobuyuki Soyama
Takashi Noguchi
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DE00468A publication Critical patent/IN2014DE00468A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range 10 of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.
IN468DE2014 2013-03-29 2014-02-18 IN2014DE00468A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013073150 2013-03-29

Publications (1)

Publication Number Publication Date
IN2014DE00468A true IN2014DE00468A (en) 2015-06-19

Family

ID=50112827

Family Applications (1)

Application Number Title Priority Date Filing Date
IN468DE2014 IN2014DE00468A (en) 2013-03-29 2014-02-18

Country Status (7)

Country Link
US (1) US9251955B2 (en)
EP (1) EP2784804A1 (en)
JP (1) JP2015038956A (en)
KR (1) KR20140118724A (en)
CN (1) CN104072133A (en)
IN (1) IN2014DE00468A (en)
TW (1) TW201442309A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102691313B1 (en) * 2016-09-06 2024-08-05 삼성전기주식회사 Thin film capacitor
KR102482896B1 (en) 2017-12-28 2022-12-30 삼성전자주식회사 Memory device including heterogeneous volatile memory chips and electronic device including the same
US11818955B2 (en) 2021-08-26 2023-11-14 City University Of Hong Kong Method for forming piezoelectric films on surfaces of arbitrary morphologies

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243307B2 (en) 1992-11-06 2002-01-07 ティーディーケイ株式会社 Nonlinear optical element and method of manufacturing the same
US6126743A (en) * 1993-03-12 2000-10-03 Sumitomo Chemical Company, Limited Process for producing dielectrics and fine single crystal powders and thin film capacitor
JPH0799252A (en) * 1993-06-22 1995-04-11 Sharp Corp Manufacture of ferroelectric film and semiconductor device using manufacture thereof
US6066581A (en) * 1995-07-27 2000-05-23 Nortel Networks Corporation Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
JPH10270772A (en) 1997-03-28 1998-10-09 Citizen Watch Co Ltd Ferroelectric thin film element
JPH11307834A (en) 1998-04-24 1999-11-05 Seiko Epson Corp Piezoelectric element, ink-jet recording head, and manufacture thereof
US6809052B2 (en) * 2002-01-15 2004-10-26 Tdk Corporation Dielectric ceramic composition and electronic device
CN101147216B (en) * 2005-03-25 2010-06-16 京瓷株式会社 Laminated ceramic capacitor and process for producing the same
TW200712243A (en) * 2005-09-13 2007-04-01 Energenius Inc Ferroelectric thin film composites with improved top contact adhesion and devices containing the same
JP4737027B2 (en) 2006-10-13 2011-07-27 セイコーエプソン株式会社 Method for manufacturing piezoelectric element and method for manufacturing ink jet recording head
CN100432018C (en) * 2007-05-23 2008-11-12 哈尔滨工业大学 Method for fabricating film of aluminum zirconate titanate with high orientating (111)
JP5414433B2 (en) * 2008-09-30 2014-02-12 キヤノン株式会社 Ferroelectric ceramic material
JP2011238708A (en) 2010-05-07 2011-11-24 Seiko Epson Corp Liquid ejection head manufacturing method, liquid ejection device, and piezoelectric element manufacturing method
JP5521957B2 (en) 2010-05-24 2014-06-18 三菱マテリアル株式会社 Ferroelectric thin film and thin film capacitor using the ferroelectric thin film
WO2012141698A1 (en) * 2011-04-13 2012-10-18 Empire Technology Development Llc Dielectric nanocomposites and methods of making the same
WO2012165110A1 (en) 2011-05-31 2012-12-06 コニカミノルタホールディングス株式会社 Ferroelectric film and piezoelectric element provided therewith

Also Published As

Publication number Publication date
JP2015038956A (en) 2015-02-26
EP2784804A1 (en) 2014-10-01
US9251955B2 (en) 2016-02-02
KR20140118724A (en) 2014-10-08
CN104072133A (en) 2014-10-01
TW201442309A (en) 2014-11-01
US20140293505A1 (en) 2014-10-02

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