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IN2014MU02658A - - Google Patents

Info

Publication number
IN2014MU02658A
IN2014MU02658A IN2658MU2014A IN2014MU02658A IN 2014MU02658 A IN2014MU02658 A IN 2014MU02658A IN 2658MU2014 A IN2658MU2014 A IN 2658MU2014A IN 2014MU02658 A IN2014MU02658 A IN 2014MU02658A
Authority
IN
India
Prior art keywords
power semiconductor
housing component
cooling
cooling housing
heat sink
Prior art date
Application number
Inventor
Bogen Ingo
Beck Markus
Kulas Hartmut
Popescu Alexander
Helldoerfer Reinhard
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Publication of IN2014MU02658A publication Critical patent/IN2014MU02658A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83237—Applying energy for connecting using an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

The invention relates to a power semiconductor device comprising a power semiconductor module and a heat sink, wherein the heat sink has a first cooling housing component, which has a cutout passing through the first cooling housing component, and a second cooling housing component, wherein the cooling plate is arranged in the cutout, wherein the first and second cooling housing components have such a shape and are arranged relative to one another in such a way that a cavity is formed at the side of the cooling plate facing away from the power semiconductor components, wherein the cooling plate is connected to the first cooling housing component by means of a first weld seam extending circumferentially around the cooling plate, wherein the first weld seam seals the cooling plate in relation to the first cooling housing component, wherein the second cooling housing component is connected to the first cooling housing component. Furthermore, the invention relates to a method for producing a power semiconductor device. The invention provides a power semiconductor device which has a good heat conduction from the power semiconductor components to a heat sink of the power semiconductor device, through which heat sink a liquid can flow, and in the case of which the heat sink is leaktight reliably and over the long term.
IN2658MU2014 2013-09-03 2014-08-19 IN2014MU02658A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201310109589 DE102013109589B3 (en) 2013-09-03 2013-09-03 Power semiconductor device and method for producing a power semiconductor device

Publications (1)

Publication Number Publication Date
IN2014MU02658A true IN2014MU02658A (en) 2015-10-09

Family

ID=51167798

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2658MU2014 IN2014MU02658A (en) 2013-09-03 2014-08-19

Country Status (7)

Country Link
US (1) US9111900B2 (en)
EP (1) EP2844051A3 (en)
JP (1) JP2015050465A (en)
KR (1) KR20150026862A (en)
CN (1) CN104425406B (en)
DE (1) DE102013109589B3 (en)
IN (1) IN2014MU02658A (en)

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* Cited by examiner, † Cited by third party
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DE102015211160A1 (en) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Arrangement for cooling a power module
CN107004660A (en) * 2015-06-17 2017-08-01 富士电机株式会社 Power semiconductor modular and cooler
DE102015211163A1 (en) * 2015-06-17 2016-12-22 Zf Friedrichshafen Ag Arrangement for cooling a power module
EP3116292B1 (en) 2015-07-06 2021-03-17 EDAG Engineering AG Electronic module with generative cooling body
DE102015114188B4 (en) * 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Power electronic submodule with a two-part housing
DE102015223413A1 (en) * 2015-11-26 2017-06-01 Zf Friedrichshafen Ag Copper-aluminum heat sinks
US9824953B1 (en) 2016-05-16 2017-11-21 Caterpillar Inc. Mounting and environmental protection device for an IGBT module
JP6811551B2 (en) * 2016-05-27 2021-01-13 日産自動車株式会社 Manufacturing method and cooling structure of power converter
KR101956983B1 (en) 2016-09-20 2019-03-11 현대자동차일본기술연구소 Power module and manufacturing method therefor
DE102017101269B4 (en) 2017-01-24 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Power semiconductor device with a power semiconductor module and a heat sink
DE102017001351A1 (en) * 2017-02-11 2018-08-16 Leopold Kostal Gmbh & Co. Kg Electrical device and method of making an electrical device
US10950522B2 (en) * 2017-02-13 2021-03-16 Shindengen Electric Manufacturing Co., Ltd. Electronic device
JP6988432B2 (en) * 2017-12-18 2022-01-05 株式会社デンソー Reactor unit
DE102019200142A1 (en) * 2019-01-08 2020-07-09 Volkswagen Aktiengesellschaft Cooling unit for removing waste heat from at least one power component
EP3703117B1 (en) 2019-02-28 2022-11-23 Audi Ag Electric power converter device with improved integration of cooler frame
DE102019202903A1 (en) * 2019-03-04 2020-09-10 Abb Schweiz Ag Electronic converter trained based on welding technologies
DE102019202902A1 (en) * 2019-03-04 2020-09-10 Abb Schweiz Ag Direct cooling of a converter using an embossed plate
CN110173957B (en) * 2019-06-19 2023-09-08 广东文轩热能科技股份有限公司 Novel liquid cooling plate
CN114175221B (en) * 2019-07-25 2022-10-28 日立能源瑞士股份公司 Power semiconductor module and method for forming the same
DE102020207947A1 (en) * 2019-11-25 2021-05-27 Volkswagen Aktiengesellschaft Cooling arrangement for electronic components of a motor vehicle and manufacturing method therefor
DE102020110937B4 (en) 2020-04-22 2022-06-09 Semikron Elektronik Gmbh & Co. Kg Cooling device for cooling a power semiconductor module
DE102020111528A1 (en) * 2020-04-28 2021-10-28 Semikron Elektronik Gmbh & Co. Kg Power electronic arrangement with a multi-phase power semiconductor module
CN215935363U (en) * 2020-09-02 2022-03-01 春鸿电子科技(重庆)有限公司 Liquid cooling head
CN114361122A (en) * 2021-08-11 2022-04-15 华为技术有限公司 Packaging structure and packaging method of power module
KR102623554B1 (en) * 2021-11-10 2024-01-11 동양피스톤 주식회사 Water-cooled heat dissipation module assembly
DE102022201557B3 (en) 2022-02-15 2023-07-20 Magna powertrain gmbh & co kg Power module assembly and assembly method for the power module assembly
DE102022212458A1 (en) * 2022-11-22 2024-05-23 Magna powertrain gmbh & co kg Power converter with directly cooled power module and method for manufacturing a power converter

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Also Published As

Publication number Publication date
US9111900B2 (en) 2015-08-18
KR20150026862A (en) 2015-03-11
US20150061112A1 (en) 2015-03-05
CN104425406A (en) 2015-03-18
DE102013109589B3 (en) 2015-03-05
EP2844051A3 (en) 2016-06-01
EP2844051A2 (en) 2015-03-04
JP2015050465A (en) 2015-03-16
CN104425406B (en) 2019-01-08

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