IE34899B1 - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- IE34899B1 IE34899B1 IE6371A IE6371A IE34899B1 IE 34899 B1 IE34899 B1 IE 34899B1 IE 6371 A IE6371 A IE 6371A IE 6371 A IE6371 A IE 6371A IE 34899 B1 IE34899 B1 IE 34899B1
- Authority
- IE
- Ireland
- Prior art keywords
- carriers
- medium
- image
- electrodes
- site
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000969 carrier Substances 0.000 abstract 9
- 239000002800 charge carrier Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000005865 ionizing radiation Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Facsimile Heads (AREA)
- Measurement Of Radiation (AREA)
- Luminescent Compositions (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image Input (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
1340617 Electroluminescence WESTERN ELECTRIC CO Inc 19 April 1971 [16 Feb 1970] 21830/71 Heading C4S [Also in Division H1] A semi-conductor device comprises a semiconductive, electroluminescent, charge carrier storage medium, a means for storing the carriers at a first site in the medium, and a means for transferring the carriers to a second site, a radiative output being obtainable on the recombination of the carriers with the bulk carriers of the medium. Electrode and insulator materials and thicknesses are given. The principle of operation is shown in the shift register of Fig. 2 wherein a series of electrodes 22a, 23a &c. overlie the medium 20 on an insulating layer 21. Carriers at the input 25 migrate to the depletion region 27a under electrode 22a, formed by suitable biasing, and is thereafter sequentially transferred to depletion regions sequentially formed under the next electrode by suitably timed voltage pulses on 22<SP>1</SP>, 23<SP>1</SP> and 24<SP>1</SP>. The carriers may alternatively be generated not only at the input, but along the entire device, by light or other ionizing radiation incident upon the medium, movement of the charges towards the output (by means of suitable voltage pulses to the electrodes), resulting in a video signal corresponding to the image on the medium. Alternatively a video signal may produce an image if the video signal is fed into the device, and when all the sites have been charged, or not, by the signal, a bias on the electrodes may cause the carriers to recombine forming an image in the electroluminescent medium. Fig. 10 is such a device, in which in a medium of N type GaAs P type regions 117a, 118a &c. are formed. The electrodes 115a, 116a &c. form the gate electrodes, effectively, of a series of IGFETS, the drain of one FET forming the source of the next. By applying alternating clock pulses to the electrodes, charge carriers can be caused to travel from site to site sequentially, the channels being opened and closed sequentially. When the final site is reached, all the carriers may be forced to recombine simultaneously with the bulk carriers of the medium producing an image in the medium. This image may be applied to a photo-cathode of a CRT to form an image on the screen. Figs. 5A-5C (not shown) illustrate various output devices. Specifications 1,340618 and 1,340,619 are referred to.
[GB1340617A]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1144670A | 1970-02-16 | 1970-02-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE34899L IE34899L (en) | 1971-08-16 |
| IE34899B1 true IE34899B1 (en) | 1975-09-17 |
Family
ID=21750410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE6371A IE34899B1 (en) | 1970-02-16 | 1971-01-19 | Improvements in or relating to semiconductor devices |
Country Status (9)
| Country | Link |
|---|---|
| BE (1) | BE762943A (en) |
| CH (1) | CH534941A (en) |
| DE (1) | DE2107110B2 (en) |
| ES (1) | ES388721A1 (en) |
| FR (1) | FR2091962B1 (en) |
| GB (1) | GB1340617A (en) |
| IE (1) | IE34899B1 (en) |
| NL (1) | NL7101991A (en) |
| SE (1) | SE373966B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318155B2 (en) * | 1971-12-29 | 1978-06-13 | ||
| NL165886C (en) | 1972-04-03 | 1981-05-15 | Hitachi Ltd | SEMICONDUCTOR DEVICE OF THE LOAD-CONNECTED TYPE FOR STORING AND IN COMPLIANT TRANSFER OF PACKAGES OF MAJORITY CARRIERS. |
| CA1106477A (en) * | 1972-07-10 | 1981-08-04 | Carlo H. Sequin | Overflow channel for charge transfer imaging devices |
| FR2259438B1 (en) * | 1974-01-24 | 1976-10-08 | Commissariat Energie Atomique | |
| DE2733707C2 (en) * | 1977-07-26 | 1985-05-15 | Siemens AG, 1000 Berlin und 8000 München | Semiconductor component, suitable for optoelectronic image recording and / or image reproduction devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3424934A (en) * | 1966-08-10 | 1969-01-28 | Bell Telephone Labor Inc | Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface |
| US3473032A (en) * | 1968-02-08 | 1969-10-14 | Inventors & Investors Inc | Photoelectric surface induced p-n junction device |
| NL155155B (en) * | 1968-04-23 | 1977-11-15 | Philips Nv | DEVICE FOR CONVERSION OF A PHYSICAL PATTERN INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME, THE TELEVISION CAMERA CONTAINED, AS WELL AS SEMI-CONDUCTOR DEVICE FOR USE THEREIN. |
| US3623026A (en) * | 1969-01-21 | 1971-11-23 | Gen Electric | Mis device and method for storing information and providing an optical readout |
-
1971
- 1971-01-19 IE IE6371A patent/IE34899B1/en unknown
- 1971-02-09 SE SE157871A patent/SE373966B/xx unknown
- 1971-02-15 BE BE762943A patent/BE762943A/en unknown
- 1971-02-15 FR FR7105071A patent/FR2091962B1/fr not_active Expired
- 1971-02-15 DE DE19712107110 patent/DE2107110B2/en active Pending
- 1971-02-15 ES ES388721A patent/ES388721A1/en not_active Expired
- 1971-02-15 NL NL7101991A patent/NL7101991A/xx unknown
- 1971-02-16 CH CH222171A patent/CH534941A/en not_active IP Right Cessation
- 1971-04-19 GB GB2183071A patent/GB1340617A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE762943A (en) | 1971-07-16 |
| NL7101991A (en) | 1971-08-18 |
| DE2107110B2 (en) | 1975-02-06 |
| FR2091962A1 (en) | 1972-01-21 |
| SE373966B (en) | 1975-02-17 |
| GB1340617A (en) | 1973-12-12 |
| ES388721A1 (en) | 1974-05-01 |
| DE2107110A1 (en) | 1971-09-23 |
| IE34899L (en) | 1971-08-16 |
| CH534941A (en) | 1973-03-15 |
| FR2091962B1 (en) | 1974-04-26 |
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