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HK1204145A1 - Group 13 selenide nanoparticles xiii - Google Patents

Group 13 selenide nanoparticles xiii

Info

Publication number
HK1204145A1
HK1204145A1 HK15104596.3A HK15104596A HK1204145A1 HK 1204145 A1 HK1204145 A1 HK 1204145A1 HK 15104596 A HK15104596 A HK 15104596A HK 1204145 A1 HK1204145 A1 HK 1204145A1
Authority
HK
Hong Kong
Prior art keywords
xiii
group
selenide nanoparticles
selenide
nanoparticles
Prior art date
Application number
HK15104596.3A
Other languages
English (en)
Chinese (zh)
Inventor
Nathalie Gresty
Ombretta Masala
Christopher Newman
Stephen Whitelegg
Nigel Pickett
Original Assignee
Nanoco Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoco Technologies Ltd filed Critical Nanoco Technologies Ltd
Publication of HK1204145A1 publication Critical patent/HK1204145A1/xx

Links

Classifications

    • H01L31/1864—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H01L31/0322—
    • H01L31/035218—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Composite Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Luminescent Compositions (AREA)
HK15104596.3A 2012-07-09 2015-05-14 Group 13 selenide nanoparticles xiii HK1204145A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261669339P 2012-07-09 2012-07-09
PCT/IB2013/002223 WO2014009815A2 (en) 2012-07-09 2013-07-05 Group xiii selenide nanoparticles

Publications (1)

Publication Number Publication Date
HK1204145A1 true HK1204145A1 (en) 2015-11-06

Family

ID=49585435

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15104596.3A HK1204145A1 (en) 2012-07-09 2015-05-14 Group 13 selenide nanoparticles xiii

Country Status (7)

Country Link
US (2) US9359202B2 (xx)
EP (2) EP2870621B1 (xx)
JP (3) JP6371764B2 (xx)
KR (3) KR101834997B1 (xx)
CN (1) CN104428870B (xx)
HK (1) HK1204145A1 (xx)
WO (1) WO2014009815A2 (xx)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9359202B2 (en) * 2012-07-09 2016-06-07 Nanoco Technologies Ltd Group 13 selenide nanoparticles
US9196767B2 (en) 2013-07-18 2015-11-24 Nanoco Technologies Ltd. Preparation of copper selenide nanoparticles
KR102164628B1 (ko) * 2013-08-05 2020-10-13 삼성전자주식회사 나노 결정 합성 방법
NL2011422C2 (en) * 2013-09-11 2015-03-16 Exergy Holding B V Electrolytic seperator, manufacturing method and system.
US9517937B2 (en) * 2014-03-20 2016-12-13 Sandia Corporation Method to synthesize metal chalcogenide monolayer nanomaterials
JPWO2015156226A1 (ja) 2014-04-08 2017-04-13 Ｎｓマテリアルズ株式会社 量子ドット及びその製造方法、並びに、前記量子ドットを用いた成形体、シート部材、波長変換部材、発光装置
US20160079639A1 (en) * 2014-09-15 2016-03-17 James O. Pinon Cooling fin for a battery cell
TWI502762B (zh) * 2014-12-22 2015-10-01 Ind Tech Res Inst 化合物太陽能電池與硫化物單晶奈米粒子薄膜的製造方法
US10889887B2 (en) 2016-08-22 2021-01-12 Honeywell International Inc. Chalcogenide sputtering target and method of making the same
US10883046B2 (en) 2017-02-02 2021-01-05 Nanoco 2D Materials Limited Synthesis of luminescent 2D layered materials using an amine-met al complex and a slow sulfur-releasing precursor
US20180355201A1 (en) 2017-06-07 2018-12-13 Nanoco Technologies Ltd. CIGS Nanoparticle Ink Formulation with a High Crack-Free Limit
JP7006296B2 (ja) * 2018-01-19 2022-01-24 富士通株式会社 学習プログラム、学習方法および学習装置
CN111211041B (zh) * 2020-01-10 2023-05-26 电子科技大学 一种制备大面积β相硒化铟单晶薄膜的方法
KR102484464B1 (ko) * 2020-02-13 2023-01-02 고려대학교 산학협력단 무기 나노입자 박막을 포함하는 전자 부재의 제조 방법 및 이에 의해 제조된 전자 부재

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
US8048477B2 (en) 2004-02-19 2011-11-01 Nanosolar, Inc. Chalcogenide solar cells
KR100850000B1 (ko) * 2005-09-06 2008-08-01 주식회사 엘지화학 태양전지 흡수층의 제조방법
KR100909179B1 (ko) * 2006-07-24 2009-07-22 주식회사 엘지화학 Ｃｉｓ계 태양전지 흡수층의 제조방법
WO2008129250A2 (en) 2007-04-18 2008-10-30 Nanoco Technologies Limited Fabrication of electrically active films based on multiple layers
GB0723539D0 (en) * 2007-12-01 2008-01-09 Nanoco Technologies Ltd Preparation of nonoparticle material
US8563348B2 (en) 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
KR101144807B1 (ko) * 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
JP5566901B2 (ja) 2007-11-30 2014-08-06 ナノコ テクノロジーズ リミテッド ナノ粒子材料の調製
US8784701B2 (en) * 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
BRPI1011655A2 (pt) * 2009-05-26 2019-09-24 Purdue Research Foundation uso de lcat para tratar anemia e disfunção de glóbulos vermelhos
CN102473778A (zh) * 2009-08-04 2012-05-23 普瑞凯瑟安质提克斯公司 用于具有受控的化学计量的光伏吸收剂的方法
US8470636B2 (en) * 2009-11-25 2013-06-25 E I Du Pont De Nemours And Company Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles
JP5495925B2 (ja) * 2010-04-27 2014-05-21 京セラ株式会社 半導体の製造方法および光電変換装置の製造方法
JP5588757B2 (ja) * 2010-06-21 2014-09-10 株式会社アルバック Ｉｎ−Ｓｅ合金粉末、Ｉｎ−Ｓｅ合金焼結体、Ｇａ−Ｓｅ合金粉末、Ｇａ−Ｓｅ合金焼結体、Ｉｎ−Ｇａ−Ｓｅ合金粉末、Ｉｎ−Ｇａ−Ｓｅ合金焼結体、Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ合金粉末及びＣｕ−Ｉｎ−Ｇａ−Ｓｅ合金焼結体の製造方法
US20130233202A1 (en) * 2010-12-03 2013-09-12 Ei Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
WO2012075259A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
US9359202B2 (en) * 2012-07-09 2016-06-07 Nanoco Technologies Ltd Group 13 selenide nanoparticles

Also Published As

Publication number Publication date
KR20170130623A (ko) 2017-11-28
JP2018113453A (ja) 2018-07-19
CN104428870B (zh) 2017-07-14
US20140011317A1 (en) 2014-01-09
JP6760984B2 (ja) 2020-09-23
JP6371764B2 (ja) 2018-08-08
US20160233373A1 (en) 2016-08-11
KR20150036135A (ko) 2015-04-07
EP2870621A2 (en) 2015-05-13
US9755101B2 (en) 2017-09-05
WO2014009815A3 (en) 2014-03-27
KR101834997B1 (ko) 2018-03-06
CN104428870A (zh) 2015-03-18
JP2015523314A (ja) 2015-08-13
KR101800829B1 (ko) 2017-11-23
KR101712053B1 (ko) 2017-03-03
US9359202B2 (en) 2016-06-07
EP3460831A1 (en) 2019-03-27
JP2016197724A (ja) 2016-11-24
WO2014009815A2 (en) 2014-01-16
EP2870621B1 (en) 2018-12-26
KR20170021906A (ko) 2017-02-28
JP6531071B2 (ja) 2019-06-12

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