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HK1250281A1 - 製造半導體裝置的方法 - Google Patents

製造半導體裝置的方法

Info

Publication number
HK1250281A1
HK1250281A1 HK18109635.2A HK18109635A HK1250281A1 HK 1250281 A1 HK1250281 A1 HK 1250281A1 HK 18109635 A HK18109635 A HK 18109635A HK 1250281 A1 HK1250281 A1 HK 1250281A1
Authority
HK
Hong Kong
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
HK18109635.2A
Other languages
English (en)
Inventor
柳生祐貴
Original Assignee
瑞薩電子株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子株式會社 filed Critical 瑞薩電子株式會社
Publication of HK1250281A1 publication Critical patent/HK1250281A1/zh

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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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JPH01170034A (ja) * 1987-12-25 1989-07-05 Hitachi Ltd リードフレーム及び半導体装置
JPH08236564A (ja) 1995-02-28 1996-09-13 Nec Kyushu Ltd 半導体装置
JP3062192B1 (ja) * 1999-09-01 2000-07-10 松下電子工業株式会社 リ―ドフレ―ムとそれを用いた樹脂封止型半導体装置の製造方法
IT1317559B1 (it) * 2000-05-23 2003-07-09 St Microelectronics Srl Telaio di supporto per chip avente interconnessioni a bassa resistenza.
JP2003338519A (ja) * 2002-05-21 2003-11-28 Renesas Technology Corp 半導体装置及びその製造方法
JP2004095572A (ja) * 2002-08-29 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法
KR100555495B1 (ko) * 2003-02-08 2006-03-03 삼성전자주식회사 칩 어레이 몰딩용 몰드 다이, 그것을 포함하는 몰딩 장치및 칩 어레이 몰딩 방법
JP4570868B2 (ja) * 2003-12-26 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置
JP4307362B2 (ja) * 2004-11-10 2009-08-05 パナソニック株式会社 半導体装置、リードフレーム及びリードフレームの製造方法
US7464854B2 (en) * 2005-01-25 2008-12-16 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop
JP2009049072A (ja) * 2007-08-15 2009-03-05 Panasonic Corp リードフレーム、半導体装置、リードフレームの製造方法、および半導体装置の製造方法
JP4957513B2 (ja) * 2007-11-05 2012-06-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP5448727B2 (ja) * 2009-11-05 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5467959B2 (ja) * 2010-07-21 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2012109435A (ja) * 2010-11-18 2012-06-07 Renesas Electronics Corp 半導体装置の製造方法
JP5795277B2 (ja) * 2012-03-22 2015-10-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP6129645B2 (ja) * 2013-05-29 2017-05-17 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6092084B2 (ja) 2013-11-29 2017-03-08 アオイ電子株式会社 半導体装置および半導体装置の製造方法
JP2015220248A (ja) * 2014-05-14 2015-12-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2018046242A (ja) * 2016-09-16 2018-03-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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