HK1138432A1 - Pyramidal photonic crystal light emitting device - Google Patents
Pyramidal photonic crystal light emitting deviceInfo
- Publication number
- HK1138432A1 HK1138432A1 HK10103622.8A HK10103622A HK1138432A1 HK 1138432 A1 HK1138432 A1 HK 1138432A1 HK 10103622 A HK10103622 A HK 10103622A HK 1138432 A1 HK1138432 A1 HK 1138432A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- light emitting
- emitting device
- photonic crystal
- crystal light
- pyramidal photonic
- Prior art date
Links
- 239000004038 photonic crystal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/564,213 US7700962B2 (en) | 2006-11-28 | 2006-11-28 | Inverted-pyramidal photonic crystal light emitting device |
| US11/564,207 US7615398B2 (en) | 2006-11-28 | 2006-11-28 | Pyramidal photonic crystal light emitting device |
| PCT/GB2007/004521 WO2008065373A1 (en) | 2006-11-28 | 2007-11-27 | Pyramidal photonic crystal light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1138432A1 true HK1138432A1 (en) | 2010-08-20 |
Family
ID=39126629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK10103622.8A HK1138432A1 (en) | 2006-11-28 | 2010-04-14 | Pyramidal photonic crystal light emitting device |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101281504B1 (en) |
| HK (1) | HK1138432A1 (en) |
| TW (1) | TWI342629B (en) |
| WO (1) | WO2008065373A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI459593B (en) * | 2009-06-19 | 2014-11-01 | Fu Der Lai | Structure of light emitting diodes for increase of light emitting efficiency |
| WO2011146015A1 (en) | 2010-05-18 | 2011-11-24 | Agency For Science, Technology And Research | Method of forming a light emitting diode structure and a light emitting diode structure |
| GB2487917B (en) | 2011-02-08 | 2015-03-18 | Seren Photonics Ltd | Semiconductor devices and fabrication methods |
| CN102299243A (en) * | 2011-09-14 | 2011-12-28 | 青岛理工大学 | Film flip photonic crystal LED chip and manufacturing method thereof |
| EP2597687B1 (en) * | 2011-11-23 | 2016-02-03 | Imec | Method for producing a GaN LED device |
| CN104103727A (en) * | 2013-04-09 | 2014-10-15 | 江苏稳润光电有限公司 | LED chip capable of improving quantum efficiency, and preparation method thereof |
| KR102200075B1 (en) * | 2014-12-22 | 2021-01-11 | 엘지이노텍 주식회사 | Uv light emitting device and lighting system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4233268B2 (en) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | Nitride-based semiconductor light-emitting device and manufacturing method thereof |
| US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
| US7385226B2 (en) | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
| US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| US7509012B2 (en) * | 2004-09-22 | 2009-03-24 | Luxtaltek Corporation | Light emitting diode structures |
-
2007
- 2007-11-27 TW TW96144947A patent/TWI342629B/en active
- 2007-11-27 KR KR1020097013252A patent/KR101281504B1/en not_active IP Right Cessation
- 2007-11-27 WO PCT/GB2007/004521 patent/WO2008065373A1/en active Application Filing
-
2010
- 2010-04-14 HK HK10103622.8A patent/HK1138432A1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200847482A (en) | 2008-12-01 |
| KR20090099537A (en) | 2009-09-22 |
| KR101281504B1 (en) | 2013-07-03 |
| WO2008065373A1 (en) | 2008-06-05 |
| TWI342629B (en) | 2011-05-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20161127 |