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GB958103A - Semiconductor glass and a resistor including such glass - Google Patents

Semiconductor glass and a resistor including such glass

Info

Publication number
GB958103A
GB958103A GB360063A GB360063A GB958103A GB 958103 A GB958103 A GB 958103A GB 360063 A GB360063 A GB 360063A GB 360063 A GB360063 A GB 360063A GB 958103 A GB958103 A GB 958103A
Authority
GB
United Kingdom
Prior art keywords
glass
temperature
semiconductor
resistor including
hour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB360063A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Resistance Co
Original Assignee
International Resistance Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Resistance Co filed Critical International Resistance Co
Publication of GB958103A publication Critical patent/GB958103A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)

Abstract

A semi-conductor glass, particularly for use in resistors, consists essentially of germanium oxide, phosphorus pentoxide and vanadium pentoxide. The suggested ranges are GeO2 0.1 to 50; P2O5 0.1 to 80 and U2O5 20 to 9 all in percentages by weight. The glass materials are melted at a temperature between 1100 DEG C. and 1300 DEG C. and cast with moulds on a hot steel plate. The glass pieces are then annealed in an oven at a temperature 50 DEG C. below the deformation temperature for a period of from 15 minutes to 1 hour and then allowed to cool at 100 DEG C. per hour to room temperature. Three examples are given of compositions, with resistances.
GB360063A 1962-02-14 1963-01-29 Semiconductor glass and a resistor including such glass Expired GB958103A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17315062A 1962-02-14 1962-02-14

Publications (1)

Publication Number Publication Date
GB958103A true GB958103A (en) 1964-05-13

Family

ID=22630750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB360063A Expired GB958103A (en) 1962-02-14 1963-01-29 Semiconductor glass and a resistor including such glass

Country Status (1)

Country Link
GB (1) GB958103A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854112A (en) * 1972-12-19 1974-12-10 Int Standard Electric Corp Piezoresistive glass stress transducer
US4203769A (en) 1975-07-15 1980-05-20 Eastman Kodak Company Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854112A (en) * 1972-12-19 1974-12-10 Int Standard Electric Corp Piezoresistive glass stress transducer
US4203769A (en) 1975-07-15 1980-05-20 Eastman Kodak Company Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide

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