GB958103A - Semiconductor glass and a resistor including such glass - Google Patents
Semiconductor glass and a resistor including such glassInfo
- Publication number
- GB958103A GB958103A GB360063A GB360063A GB958103A GB 958103 A GB958103 A GB 958103A GB 360063 A GB360063 A GB 360063A GB 360063 A GB360063 A GB 360063A GB 958103 A GB958103 A GB 958103A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- temperature
- semiconductor
- resistor including
- hour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
- H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Glass Compositions (AREA)
Abstract
A semi-conductor glass, particularly for use in resistors, consists essentially of germanium oxide, phosphorus pentoxide and vanadium pentoxide. The suggested ranges are GeO2 0.1 to 50; P2O5 0.1 to 80 and U2O5 20 to 9 all in percentages by weight. The glass materials are melted at a temperature between 1100 DEG C. and 1300 DEG C. and cast with moulds on a hot steel plate. The glass pieces are then annealed in an oven at a temperature 50 DEG C. below the deformation temperature for a period of from 15 minutes to 1 hour and then allowed to cool at 100 DEG C. per hour to room temperature. Three examples are given of compositions, with resistances.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17315062A | 1962-02-14 | 1962-02-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB958103A true GB958103A (en) | 1964-05-13 |
Family
ID=22630750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB360063A Expired GB958103A (en) | 1962-02-14 | 1963-01-29 | Semiconductor glass and a resistor including such glass |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB958103A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3854112A (en) * | 1972-12-19 | 1974-12-10 | Int Standard Electric Corp | Piezoresistive glass stress transducer |
US4203769A (en) | 1975-07-15 | 1980-05-20 | Eastman Kodak Company | Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide |
-
1963
- 1963-01-29 GB GB360063A patent/GB958103A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3854112A (en) * | 1972-12-19 | 1974-12-10 | Int Standard Electric Corp | Piezoresistive glass stress transducer |
US4203769A (en) | 1975-07-15 | 1980-05-20 | Eastman Kodak Company | Radiation-sensitive elements having an antistatic layer containing amorphous vanadium pentoxide |
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