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GB2514268B - Silicon carbide epitaxy - Google Patents

Silicon carbide epitaxy

Info

Publication number
GB2514268B
GB2514268B GB1410481.4A GB201410481A GB2514268B GB 2514268 B GB2514268 B GB 2514268B GB 201410481 A GB201410481 A GB 201410481A GB 2514268 B GB2514268 B GB 2514268B
Authority
GB
United Kingdom
Prior art keywords
silicon carbide
carbide epitaxy
epitaxy
silicon
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1410481.4A
Other versions
GB2514268A (en
GB201410481D0 (en
Inventor
Peter John Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anvil Semiconductors Ltd
Original Assignee
Anvil Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anvil Semiconductors Ltd filed Critical Anvil Semiconductors Ltd
Priority to GB1410481.4A priority Critical patent/GB2514268B/en
Priority claimed from GB1118502.2A external-priority patent/GB2495949B/en
Publication of GB201410481D0 publication Critical patent/GB201410481D0/en
Publication of GB2514268A publication Critical patent/GB2514268A/en
Priority to HK15102073.9A priority patent/HK1201637A1/en
Application granted granted Critical
Publication of GB2514268B publication Critical patent/GB2514268B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1410481.4A 2011-10-26 2011-10-26 Silicon carbide epitaxy Active GB2514268B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1410481.4A GB2514268B (en) 2011-10-26 2011-10-26 Silicon carbide epitaxy
HK15102073.9A HK1201637A1 (en) 2011-10-26 2015-03-02 Silicon carbide epitaxy

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1118502.2A GB2495949B (en) 2011-10-26 2011-10-26 Silicon carbide epitaxy
GB1410481.4A GB2514268B (en) 2011-10-26 2011-10-26 Silicon carbide epitaxy

Publications (3)

Publication Number Publication Date
GB201410481D0 GB201410481D0 (en) 2014-07-30
GB2514268A GB2514268A (en) 2014-11-19
GB2514268B true GB2514268B (en) 2015-09-30

Family

ID=51266485

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1410481.4A Active GB2514268B (en) 2011-10-26 2011-10-26 Silicon carbide epitaxy

Country Status (2)

Country Link
GB (1) GB2514268B (en)
HK (1) HK1201637A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2534357B (en) * 2015-01-14 2020-02-19 Anvil Semiconductors Ltd Wafer bow reduction
JP6515757B2 (en) * 2015-09-15 2019-05-22 信越化学工業株式会社 Method of manufacturing SiC composite substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272105A (en) * 1988-02-11 1993-12-21 Gte Laboratories Incorporated Method of manufacturing an heteroepitaxial semiconductor structure
US5030583A (en) * 1988-12-02 1991-07-09 Advanced Technolgy Materials, Inc. Method of making single crystal semiconductor substrate articles and semiconductor device
JP2009081352A (en) * 2007-09-27 2009-04-16 Seiko Epson Corp Manufacturing method for semiconductor substrate, and semiconductor substrate

Also Published As

Publication number Publication date
HK1201637A1 (en) 2015-09-04
GB2514268A (en) 2014-11-19
GB201410481D0 (en) 2014-07-30

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