GB2447360B - Data storage device and method - Google Patents
Data storage device and methodInfo
- Publication number
- GB2447360B GB2447360B GB0805288A GB0805288A GB2447360B GB 2447360 B GB2447360 B GB 2447360B GB 0805288 A GB0805288 A GB 0805288A GB 0805288 A GB0805288 A GB 0805288A GB 2447360 B GB2447360 B GB 2447360B
- Authority
- GB
- United Kingdom
- Prior art keywords
- storage device
- data storage
- data
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000013500 data storage Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0805288A GB2447360B (en) | 2006-05-09 | 2007-05-04 | Data storage device and method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0609152A GB2438003B (en) | 2006-05-09 | 2006-05-09 | Data storage device and method |
GB0708737A GB2438062B (en) | 2006-05-09 | 2007-05-04 | Data storage device and method |
GB0805288A GB2447360B (en) | 2006-05-09 | 2007-05-04 | Data storage device and method |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0805288D0 GB0805288D0 (en) | 2008-04-30 |
GB2447360A GB2447360A (en) | 2008-09-10 |
GB2447360B true GB2447360B (en) | 2008-10-22 |
Family
ID=39684375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0805288A Expired - Fee Related GB2447360B (en) | 2006-05-09 | 2007-05-04 | Data storage device and method |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2447360B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11719664B2 (en) * | 2019-02-26 | 2023-08-08 | Korea Advanced Institute Of Science And Technology | Electrical/optical multimodal sensor using multi-functional 3D nano-architecture materials and manufacturing method thereof |
EP3836384B1 (en) | 2019-12-10 | 2024-01-24 | IMEC vzw | Storage device using a tape for storing data |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060120132A1 (en) * | 2004-12-04 | 2006-06-08 | International Business Machines Corporation | System and method for transferring data to and from a magnetic shift register with a shiftable data column |
EP1826771A1 (en) * | 2006-02-23 | 2007-08-29 | Samsung Electronics Co., Ltd. | Magnetic memory device using magnetic domain dragging |
-
2007
- 2007-05-04 GB GB0805288A patent/GB2447360B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060120132A1 (en) * | 2004-12-04 | 2006-06-08 | International Business Machines Corporation | System and method for transferring data to and from a magnetic shift register with a shiftable data column |
EP1826771A1 (en) * | 2006-02-23 | 2007-08-29 | Samsung Electronics Co., Ltd. | Magnetic memory device using magnetic domain dragging |
Non-Patent Citations (2)
Title |
---|
"Digital logic using magnetic nanostructures" Cowburn RP. Proceedings of the 35th European Solid-State Device Research Conference 2005 pages 249-252 * |
"Domain wall traps for low-field switching of submicron elements" McMichael RD et al. Journal of Applied Physics. American Institute of Physics. Vol 87, no 9; 1 May 2000. Pages 6717-6719 * |
Also Published As
Publication number | Publication date |
---|---|
GB2447360A (en) | 2008-09-10 |
GB0805288D0 (en) | 2008-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20110504 |