GB2179496B - A method of controlling a distribution of carrier lifetimes within a semiconductor material - Google Patents

A method of controlling a distribution of carrier lifetimes within a semiconductor material

Info

Publication number: GB2179496B
Authority: GB; United Kingdom
Prior art keywords: distribution; controlling; semiconductor material; carrier lifetimes; lifetimes
Prior art date: 1985-08-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB8521223A

Other versions

GB2179496A (en

GB8521223D0 (en

Inventor

Peter John Frith

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Marconi Electronic Devices Ltd

Original Assignee

Marconi Electronic Devices Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-08-23

Filing date

1985-08-23

Publication date

1989-08-09

1985-08-23 Application filed by Marconi Electronic Devices Ltd filed Critical Marconi Electronic Devices Ltd

1985-08-23 Priority to GB8521223A priority Critical patent/GB2179496B/en

1985-10-02 Publication of GB8521223D0 publication Critical patent/GB8521223D0/en

1987-03-04 Publication of GB2179496A publication Critical patent/GB2179496A/en

1989-08-09 Application granted granted Critical

1989-08-09 Publication of GB2179496B publication Critical patent/GB2179496B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Thyristors (AREA)

GB8521223A 1985-08-23 1985-08-23 A method of controlling a distribution of carrier lifetimes within a semiconductor material Expired GB2179496B (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
GB8521223A GB2179496B (en)	1985-08-23	1985-08-23	A method of controlling a distribution of carrier lifetimes within a semiconductor material

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB8521223A GB2179496B (en)	1985-08-23	1985-08-23	A method of controlling a distribution of carrier lifetimes within a semiconductor material

Publications (3)

Publication Number	Publication Date
GB8521223D0 GB8521223D0 (en)	1985-10-02
GB2179496A GB2179496A (en)	1987-03-04
GB2179496B true GB2179496B (en)	1989-08-09

Family

ID=10584265

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8521223A Expired GB2179496B (en)	1985-08-23	1985-08-23	A method of controlling a distribution of carrier lifetimes within a semiconductor material

Country Status (1)

Country	Link
GB (1)	GB2179496B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3940723A1 (en) *	1989-12-09	1991-06-20	Eupec Gmbh & Co Kg	METHOD FOR GENERATING CARGO LIFETIME PROFILES IN A SEMICONDUCTOR
US5883403A (en) *	1995-10-03	1999-03-16	Hitachi, Ltd.	Power semiconductor device
JP2008091705A (en) *	2006-10-03	2008-04-17	Mitsubishi Electric Corp	Semiconductor device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0028934A1 (en) *	1979-11-12	1981-05-20	Fujitsu Limited	A method of manufacturing a semiconductor device
EP0036157A1 (en) *	1980-03-14	1981-09-23	Rockwell International Corporation	Low temperature annealing of semiconductor devices

1985
- 1985-08-23 GB GB8521223A patent/GB2179496B/en not_active Expired

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0028934A1 (en) *	1979-11-12	1981-05-20	Fujitsu Limited	A method of manufacturing a semiconductor device
EP0036157A1 (en) *	1980-03-14	1981-09-23	Rockwell International Corporation	Low temperature annealing of semiconductor devices

Also Published As

Publication number	Publication date
GB2179496A (en)	1987-03-04
GB8521223D0 (en)	1985-10-02

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Legal Events

Date	Code	Title	Description
1992-10-14	732	Registration of transactions, instruments or events in the register (sect. 32/1977)
1993-04-21	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19920823