GB2028583B - Electrical lead for a semiconductor device - Google Patents
Electrical lead for a semiconductor deviceInfo
- Publication number
- GB2028583B GB2028583B GB7927031A GB7927031A GB2028583B GB 2028583 B GB2028583 B GB 2028583B GB 7927031 A GB7927031 A GB 7927031A GB 7927031 A GB7927031 A GB 7927031A GB 2028583 B GB2028583 B GB 2028583B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- electrical lead
- lead
- electrical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4822—Beam leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7927031A GB2028583B (en) | 1978-08-02 | 1979-08-02 | Electrical lead for a semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7832015 | 1978-08-02 | ||
GB7927031A GB2028583B (en) | 1978-08-02 | 1979-08-02 | Electrical lead for a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2028583A GB2028583A (en) | 1980-03-05 |
GB2028583B true GB2028583B (en) | 1983-01-06 |
Family
ID=26268422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7927031A Expired GB2028583B (en) | 1978-08-02 | 1979-08-02 | Electrical lead for a semiconductor device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2028583B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2520931B1 (en) * | 1982-02-02 | 1986-12-12 | Thomson Csf | COLLECTIVE PROCESS FOR MANUFACTURING MICROWAVE DIODES WITH BUILT-IN ENCAPSULATION AND DIODES OBTAINED THEREBY |
FR2540290A1 (en) * | 1983-01-28 | 1984-08-03 | Thomson Csf | Ultrahigh-frequency diode having a small stray (parasitic) capacitance, and process for producing such a diode |
US4618024A (en) * | 1983-02-28 | 1986-10-21 | Amoco Corporation | Moving seismic source system for use in water-covered areas |
FR2559959B1 (en) * | 1984-02-21 | 1987-05-22 | Thomson Csf | MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME |
US4733290A (en) * | 1986-04-18 | 1988-03-22 | M/A-Com, Inc. | Semiconductor device and method of fabrication |
FR2628569B1 (en) * | 1988-03-08 | 1990-11-09 | Thomson Hybrides Microondes | INTEGRATED MICROWAVE CIRCUIT AND MANUFACTURING METHOD THEREOF |
FR2647964B1 (en) * | 1989-06-06 | 1994-03-25 | Thomson Csf | LOW CAPACITY CHIP COMPONENT, ESPECIALLY PIN CHIP DIODE |
EP1014444A1 (en) * | 1999-05-14 | 2000-06-28 | Siemens Aktiengesellschaft | Integrated circuit with protection layer and fabrication method therefor |
-
1979
- 1979-08-02 GB GB7927031A patent/GB2028583B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2028583A (en) | 1980-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |