GB1263381A - Metal contact and interconnection system for nonhermetic enclosed semiconductor devices - Google Patents
Metal contact and interconnection system for nonhermetic enclosed semiconductor devicesInfo
- Publication number
- GB1263381A GB1263381A GB2223569A GB2223569A GB1263381A GB 1263381 A GB1263381 A GB 1263381A GB 2223569 A GB2223569 A GB 2223569A GB 2223569 A GB2223569 A GB 2223569A GB 1263381 A GB1263381 A GB 1263381A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- molybdenum
- titanium
- connections
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000002184 metal Substances 0.000 title 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 239000000654 additive Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 229920003023 plastic Polymers 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 238000001721 transfer moulding Methods 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1,263,381. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 1 May, 1969 [17 May, 1968], No. 22235/69. Heading H1K. [Also in Division C7] A contact layer in ohmic connection with a region of a semi-conductor body comprises a layer of molybdenum containing a homogeneously distributed additive comprising from 3-60% by weight of the layer which additive increases its resistance to corrosion in moist environments. The specified additives in order of preference are titanium, tantalum, chromium, zirconium, hafnium and silicon. For good ohmic contact the contacted regions should be highly doped, e.g. with > 2 x 10<SP>19</SP> atoms cm.<SP>-3</SP> of boron or phosphorus introduced if necessary in an auxiliary diffusion step. Alternatively the surface can be thinly coated with aluminium or with platinum which is sintered to form a platinum silicide layer. Typically electrodes with bonding pads are formed on a planar oxidepassivated transistor element by RF sputtering in a low pressure argon atmosphere from a cathode fabricated from titanium and molybdenum powder to form an overall layer 2500 Š thick which is covered with a 10,000 Š layer of gold deposited in the same sputtering apparatus or by evaporation. The electrode pattern is formed by photoresist masking and etching steps using specified etchants. The element is finally mounted on the central one of parallelstrips, with gold wire emitter and base connections to the outer strips, and potted in plastics by a transfer moulding process. Part of an integrated circuit consisting of a number of interconnected sub-circuits each as in Fig. 9 (not shown) is seen in Fig. 12 with two layers of interconnections forming respectively the internal connections of the sub-circuits and the connections between them. The first layer of interconnections are form etched from an overall layer 116, 117, 118 consisting of 7500 Š of gold or copper sandwiched between 1200 Š layers of molybdenum or molybdenum-titanium. A 20,000 Š layer 119 of silicon oxide, or of silicon nitride, alumina or organic insulator is then formed by evaporation or sputtering and selectively etched to expose parts of the interconnection pattern to be contacted. Molybdenum is then removed from these parts V prior to deposition of an overall 1200 Š thick layer 120 of molybdenum-titanium and a 7500 Š overlayer 121 of gold. These layers are next patternetched to form the intercircuit connections and wires thermocompression bonded to the terminal points of the completed circuit.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73004768A | 1968-05-17 | 1968-05-17 | |
US72998568A | 1968-05-17 | 1968-05-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1263381A true GB1263381A (en) | 1972-02-09 |
Family
ID=27111970
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2223569A Expired GB1263381A (en) | 1968-05-17 | 1969-05-01 | Metal contact and interconnection system for nonhermetic enclosed semiconductor devices |
GB1265896D Expired GB1265896A (en) | 1968-05-17 | 1969-05-08 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1265896D Expired GB1265896A (en) | 1968-05-17 | 1969-05-08 |
Country Status (4)
Country | Link |
---|---|
DE (2) | DE1923253A1 (en) |
FR (2) | FR2008771B1 (en) |
GB (2) | GB1263381A (en) |
NL (2) | NL6907539A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE763522A (en) * | 1970-03-03 | 1971-07-16 | Licentia Gmbh | SERIES OF CONTACT LAYERS FOR SEMICONDUCTOR CONSTRUCTION ELEMENTS |
US4166279A (en) * | 1977-12-30 | 1979-08-28 | International Business Machines Corporation | Electromigration resistance in gold thin film conductors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL134170C (en) * | 1963-12-17 | 1900-01-01 | ||
US3368113A (en) * | 1965-06-28 | 1968-02-06 | Westinghouse Electric Corp | Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation |
DE1283970B (en) * | 1966-03-19 | 1968-11-28 | Siemens Ag | Metallic contact on a semiconductor component |
NL6706641A (en) * | 1966-11-07 | 1968-11-13 |
-
1969
- 1969-05-01 GB GB2223569A patent/GB1263381A/en not_active Expired
- 1969-05-07 DE DE19691923253 patent/DE1923253A1/en active Pending
- 1969-05-08 GB GB1265896D patent/GB1265896A/en not_active Expired
- 1969-05-16 FR FR6915846A patent/FR2008771B1/fr not_active Expired
- 1969-05-16 NL NL6907539A patent/NL6907539A/xx unknown
- 1969-05-16 NL NL6907540A patent/NL163065C/en not_active IP Right Cessation
- 1969-05-16 DE DE19691924845 patent/DE1924845C3/en not_active Expired
- 1969-05-16 FR FR6915845A patent/FR2011844B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2011844B1 (en) | 1973-07-13 |
DE1923253A1 (en) | 1969-12-11 |
NL163065B (en) | 1980-02-15 |
FR2008771B1 (en) | 1973-08-10 |
NL163065C (en) | 1980-07-15 |
GB1265896A (en) | 1972-03-08 |
FR2011844A1 (en) | 1970-03-13 |
DE1924845C3 (en) | 1978-11-16 |
DE1924845B2 (en) | 1978-03-09 |
FR2008771A1 (en) | 1970-01-23 |
NL6907539A (en) | 1969-11-19 |
NL6907540A (en) | 1969-11-19 |
DE1924845A1 (en) | 1969-11-27 |
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