Nothing Special   »   [go: up one dir, main page]

GB1132491A - Improvements in or relating to the manufacture of semiconductor systems - Google Patents

Improvements in or relating to the manufacture of semiconductor systems

Info

Publication number
GB1132491A
GB1132491A GB6909/66A GB690966A GB1132491A GB 1132491 A GB1132491 A GB 1132491A GB 6909/66 A GB6909/66 A GB 6909/66A GB 690966 A GB690966 A GB 690966A GB 1132491 A GB1132491 A GB 1132491A
Authority
GB
United Kingdom
Prior art keywords
reaction
substrate
source
transport
conductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6909/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1132491A publication Critical patent/GB1132491A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

1,132,491. Deposition by transport reaction. SIEMENS A.G. 17 Feb., 1966 [18 Feb., 1965], No. 6909/66. Heading C1A. [Also in Division C7] In a process for the deposition of a monocrystalline layer of semi-conductor material (e.g. silicon or an A III B v compound) from a heated source 7 on a substrate 4 of the same or a different semi-conductor material by means of a gaseous transport reaction, in which a surface layer is first removed from the substrate 4 by reaction with the continuously flowing transport gas at a temperature higher than or equal to the temperature to which the source 7 is heated, the source 7 is at a considerable distance from the substrate 4 during this preliminary reaction and is thereafter brought closer (Fig. 2, not shown) to the substrate which is reduced in temperature in order to start the transport reaction. Doping impurities may be contained in the source 7 or in the transport gas, which may consist of a mixture of hydrogen and/or a halogen and/or a hydrogen halide and/or water vapour with a gaseous compound of the semi-conductor material to be deposited. One or more heating coils 11 may be movable.
GB6909/66A 1965-02-18 1966-02-17 Improvements in or relating to the manufacture of semiconductor systems Expired GB1132491A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95520A DE1287047B (en) 1965-02-18 1965-02-18 Method and device for depositing a monocrystalline semiconductor layer

Publications (1)

Publication Number Publication Date
GB1132491A true GB1132491A (en) 1968-11-06

Family

ID=7519442

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6909/66A Expired GB1132491A (en) 1965-02-18 1966-02-17 Improvements in or relating to the manufacture of semiconductor systems

Country Status (7)

Country Link
US (1) US3425878A (en)
AT (1) AT258364B (en)
CH (1) CH444827A (en)
DE (1) DE1287047B (en)
GB (1) GB1132491A (en)
NL (1) NL6602149A (en)
SE (1) SE317652B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films
DE1769605A1 (en) * 1968-06-14 1971-07-01 Siemens Ag Method for producing epitaxial growth layers from semiconductor material for electrical components
US3839991A (en) * 1969-07-17 1974-10-08 Siemens Ag Apparatus for the production of homogeneous and plane parallel epitactic growth layers of semiconducting compounds by melt epitaxy
US3648654A (en) * 1970-03-16 1972-03-14 Bell Telephone Labor Inc Vertical liquid phase crystal growth apparatus
DE2229229A1 (en) * 1972-06-15 1974-01-10 Siemens Ag PROCESS FOR PRODUCING MOLDED BODIES FROM SILICON OR SILICON CARBIDE
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
US4262630A (en) * 1977-01-04 1981-04-21 Bochkarev Ellin P Method of applying layers of source substance over recipient and device for realizing same
US4063529A (en) * 1977-04-19 1977-12-20 Ellin Petrovich Bochkarev Device for epitaxial growing of semiconductor periodic structures from gas phase
US4555303A (en) * 1984-10-02 1985-11-26 Motorola, Inc. Oxidation of material in high pressure oxygen plasma
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265823A (en) * 1960-06-13
NL268294A (en) * 1960-10-10
NL271345A (en) * 1960-11-30
US3172792A (en) * 1961-07-05 1965-03-09 Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
NL296876A (en) * 1962-08-23
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
DE1289829B (en) * 1963-05-09 1969-02-27 Siemens Ag Process for producing a monocrystalline semiconductor layer by deposition from a reaction gas
DE1297085B (en) * 1964-01-10 1969-06-12 Siemens Ag Process for depositing a monocrystalline semiconductor layer

Also Published As

Publication number Publication date
SE317652B (en) 1969-11-24
AT258364B (en) 1967-11-27
DE1287047B (en) 1969-01-16
CH444827A (en) 1967-10-15
NL6602149A (en) 1966-08-19
US3425878A (en) 1969-02-04

Similar Documents

Publication Publication Date Title
US2692839A (en) Method of fabricating germanium bodies
US3157541A (en) Precipitating highly pure compact silicon carbide upon carriers
US3177100A (en) Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3
GB1275891A (en) Improvements in or relating to the manufacture of monocrystalline silicon layers
US3142596A (en) Epitaxial deposition onto semiconductor wafers through an interaction between the wafers and the support material
US3160522A (en) Method for producting monocrystalline semiconductor layers
GB1023070A (en) Improvements in or relating to the manufacture of semi-conductor materials
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
GB1228920A (en)
GB1160301A (en) Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate
GB1119050A (en) Improvements in or relating to the manufacture of semiconductor devices by epitaxialdeposition
GB995087A (en) Method for the controlled doping of crystalline substances
GB1260233A (en) Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase
GB929559A (en) Method of growing epitaxial semiconductor layers
US3406048A (en) Epitaxial deposition of gallium arsenide from an atmosphere of hydrogen and ga2h6+ascl3+ash3 vapors
GB1290400A (en)
US3341374A (en) Process of pyrolytically growing epitaxial semiconductor layers upon heated semiconductor substrates
GB1194017A (en) Improvements in and relating to Methods of Manufacturing Semiconductor Devices
GB995543A (en) Method for producing semiconductor films on semiconductor substrates
GB1105870A (en) Manufacture of silicon carbide ribbons
US3170825A (en) Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
GB1099098A (en) Improvements in or relating to the manufacture of semiconductor layers
GB1207748A (en) DOUBLE DEPOSITIONS OF BBr3, IN SILICON
GB1004257A (en) Improvements in or relating to processes for the preparation of semiconductor arrangements
GB1037146A (en) Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type