GB1035714A - Point-contact semiconductor diodes - Google Patents
Point-contact semiconductor diodesInfo
- Publication number
- GB1035714A GB1035714A GB34658/64A GB3465864A GB1035714A GB 1035714 A GB1035714 A GB 1035714A GB 34658/64 A GB34658/64 A GB 34658/64A GB 3465864 A GB3465864 A GB 3465864A GB 1035714 A GB1035714 A GB 1035714A
- Authority
- GB
- United Kingdom
- Prior art keywords
- point
- alloy
- electrode
- wafer
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052697 platinum Inorganic materials 0.000 abstract 2
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000003353 gold alloy Substances 0.000 abstract 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H01L29/43—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H01L29/00—
-
- H01L29/417—
-
- H01L29/86—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrotherapy Devices (AREA)
Abstract
1,035,714. Semi-conductor devices. SIEMENS & HALSKE A.G. Aug. 25, 1964 [Aug. 28, 1963], No. 34658/64. Heading H1K. A point contact electrode comprises a molybdenum or tungsten wire having a sharp point which is coated with a gold alloy having platinum as the main secondary constituent. As shown, a wafer 1 of N-type germanium is contacted with an electrode 4 according to the invention and the device is electroformed to weld the point 5 of electrode 4 to wafer 1 and to produce a P-type region 2 by thermal conversion. The device is then mounted on a copper housing plinth which forms both a heat sink and a base contact. The whole of electrode 4 may be coated with the gold-platinum alloy or the coating may be limited to the sharpened point 5. The alloy may contain 3 to 10% platinum and doping impurities such as indium or gallium and/or recombination centre materials such as nickel or copper may be included. The wafer may be of P-type germanium and the alloy may contain N-type impurities. The semiconductor material may also be silicon.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1963S0086953 DE1264618C2 (en) | 1963-08-28 | 1963-08-28 | TIP DIODE WITH A SPRING MOLYBDAEN OR TUNGSTEN WIRE AND PROCESS FOR THEIR PRODUCTION |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1035714A true GB1035714A (en) | 1966-07-13 |
Family
ID=7513397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB34658/64A Expired GB1035714A (en) | 1963-08-28 | 1964-08-25 | Point-contact semiconductor diodes |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3355638A (en) |
| CH (1) | CH418468A (en) |
| DE (1) | DE1264618C2 (en) |
| FR (1) | FR1405133A (en) |
| GB (1) | GB1035714A (en) |
| NL (1) | NL6409290A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3975756A (en) * | 1974-06-28 | 1976-08-17 | The United States Of America As Represented By The Secretary Of The Army | Gadolinium doped germanium |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1104073A (en) * | 1911-06-21 | 1914-07-21 | Wireless Specialty Apparatus Company | Detector for wireless telegraphy and telephony. |
| US2402839A (en) * | 1941-03-27 | 1946-06-25 | Bell Telephone Labor Inc | Electrical translating device utilizing silicon |
| US2429222A (en) * | 1943-06-05 | 1947-10-21 | Bell Telephone Labor Inc | Method of making contact wires |
| US2818536A (en) * | 1952-08-23 | 1957-12-31 | Hughes Aircraft Co | Point contact semiconductor devices and methods of making same |
| US2876400A (en) * | 1953-02-27 | 1959-03-03 | Siemens Ag | Composite electrodes for directional crystal devices |
| US2820135A (en) * | 1956-09-05 | 1958-01-14 | Pacific Semiconductors Inc | Method for producing electrical contact to semiconductor devices |
| US2984890A (en) * | 1956-12-24 | 1961-05-23 | Gahagan Inc | Crystal diode rectifier and method of making same |
| US3254279A (en) * | 1963-04-17 | 1966-05-31 | Cohn James | Composite alloy electric contact element |
-
1963
- 1963-08-28 DE DE1963S0086953 patent/DE1264618C2/en not_active Expired
-
1964
- 1964-05-20 CH CH657064A patent/CH418468A/en unknown
- 1964-08-12 NL NL6409290A patent/NL6409290A/xx unknown
- 1964-08-24 US US391425A patent/US3355638A/en not_active Expired - Lifetime
- 1964-08-25 GB GB34658/64A patent/GB1035714A/en not_active Expired
- 1964-08-27 FR FR986383A patent/FR1405133A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6409290A (en) | 1965-03-01 |
| FR1405133A (en) | 1965-07-02 |
| DE1264618B (en) | 1968-03-28 |
| US3355638A (en) | 1967-11-28 |
| DE1264618C2 (en) | 1977-06-02 |
| CH418468A (en) | 1966-08-15 |
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