GB1028332A - Improvements relating to variable gain transistor amplifiers - Google Patents
Improvements relating to variable gain transistor amplifiersInfo
- Publication number
- GB1028332A GB1028332A GB641162A GB641162A GB1028332A GB 1028332 A GB1028332 A GB 1028332A GB 641162 A GB641162 A GB 641162A GB 641162 A GB641162 A GB 641162A GB 1028332 A GB1028332 A GB 1028332A
- Authority
- GB
- United Kingdom
- Prior art keywords
- common
- stage
- transistor
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
Landscapes
- Amplifiers (AREA)
Abstract
1,028,332. Transistor amplifiers. ELECTRIC & MUSICAL INDUSTRIES Ltd. Feb. 15, 1963 [Feb. 17, 1962], No. 6411/62. Heading H3T. A variable gain transistor amplifier, for example an intermediate-frequency amplifier in radar equipment, comprises a common emitter transistor stage whose output is coupled to the input of a common-base transistor stage, means being provided for controlling the gain of the common-emitter stage. Since the common-base stage has a low input impedance, variations in the comparatively high output impedance of the common-emitter stage as its gain is varied do not substantially affect the characteristics of the common-base stage. In the arrangement shown, the gain of the common-emitter stage TR1 may be varied by varying the D.C. bias applied to the base of the transistor from potentiometer Rv. The control may be arranged to be due either to the varying emitter-current level or to the varying collector-voltage level with base bias. The emitter input impedance to common-base transistor TR2 exhibits an inductive component which is tuned by capacitor CN to a resonant frequency falling within the pass-band of the amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB641162A GB1028332A (en) | 1962-02-17 | 1962-02-17 | Improvements relating to variable gain transistor amplifiers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB641162A GB1028332A (en) | 1962-02-17 | 1962-02-17 | Improvements relating to variable gain transistor amplifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1028332A true GB1028332A (en) | 1966-05-04 |
Family
ID=9814023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB641162A Expired GB1028332A (en) | 1962-02-17 | 1962-02-17 | Improvements relating to variable gain transistor amplifiers |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1028332A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1524763A1 (en) * | 2003-10-14 | 2005-04-20 | Broadcom Corporation | Modulation dependent biasing for efficient and high-linearity power amplifiers |
-
1962
- 1962-02-17 GB GB641162A patent/GB1028332A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1524763A1 (en) * | 2003-10-14 | 2005-04-20 | Broadcom Corporation | Modulation dependent biasing for efficient and high-linearity power amplifiers |
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