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GB0401622D0 - Plasma etching process - Google Patents

Plasma etching process

Info

Publication number
GB0401622D0
GB0401622D0 GB0401622A GB0401622A GB0401622D0 GB 0401622 D0 GB0401622 D0 GB 0401622D0 GB 0401622 A GB0401622 A GB 0401622A GB 0401622 A GB0401622 A GB 0401622A GB 0401622 D0 GB0401622 D0 GB 0401622D0
Authority
GB
United Kingdom
Prior art keywords
etching process
plasma etching
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0401622A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Instruments Plasma Technology Ltd
Original Assignee
Oxford Instruments Plasma Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Instruments Plasma Technology Ltd filed Critical Oxford Instruments Plasma Technology Ltd
Priority to GB0401622A priority Critical patent/GB0401622D0/en
Publication of GB0401622D0 publication Critical patent/GB0401622D0/en
Priority to PCT/GB2005/000269 priority patent/WO2005071721A1/en
Ceased legal-status Critical Current

Links

GB0401622A 2004-01-26 2004-01-26 Plasma etching process Ceased GB0401622D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0401622A GB0401622D0 (en) 2004-01-26 2004-01-26 Plasma etching process
PCT/GB2005/000269 WO2005071721A1 (en) 2004-01-26 2005-01-25 Plasma etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0401622A GB0401622D0 (en) 2004-01-26 2004-01-26 Plasma etching process

Publications (1)

Publication Number Publication Date
GB0401622D0 true GB0401622D0 (en) 2004-02-25

Family

ID=31971438

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0401622A Ceased GB0401622D0 (en) 2004-01-26 2004-01-26 Plasma etching process

Country Status (2)

Country Link
GB (1) GB0401622D0 (en)
WO (1) WO2005071721A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5932599B2 (en) * 2011-10-31 2016-06-08 株式会社日立ハイテクノロジーズ Plasma etching method
DE102011118364B3 (en) 2011-11-14 2012-12-20 Technische Universität Braunschweig Carolo-Wilhelmina Method of etching and semiconductor device
KR101776333B1 (en) * 2011-12-01 2017-09-08 현대자동차주식회사 Method of forming trench in silicon carbide semiconductor
CN102627255B (en) * 2012-04-16 2015-01-14 北京大学 Micro-nano integrated processing technology based implantable three-dimensional anti-drag micro-channel and preparation method thereof
DE102013100035B4 (en) 2012-05-24 2019-10-24 Universität Kassel Etching process for III-V semiconductor materials
CN105719965A (en) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 Method and device for etching silicon dioxide substrate
US10658194B2 (en) 2016-08-23 2020-05-19 Lam Research Corporation Silicon-based deposition for semiconductor processing
CN114566431A (en) * 2022-02-21 2022-05-31 中船(邯郸)派瑞特种气体股份有限公司 Method for etching porous organic silicate material with low damage

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2502536B2 (en) * 1986-08-08 1996-05-29 松下電器産業株式会社 Pattern formation method
JPH01194325A (en) * 1988-01-29 1989-08-04 Toshiba Corp Dry-etching
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control
US5891807A (en) * 1997-09-25 1999-04-06 Siemens Aktiengesellschaft Formation of a bottle shaped trench
US6103585A (en) * 1998-06-09 2000-08-15 Siemens Aktiengesellschaft Method of forming deep trench capacitors
US6569778B2 (en) * 2001-06-28 2003-05-27 Hynix Semiconductor Inc. Method for forming fine pattern in semiconductor device

Also Published As

Publication number Publication date
WO2005071721A1 (en) 2005-08-04

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)