Nothing Special   »   [go: up one dir, main page]

FR3087607B1 - Dispositif imageur a obturation globale - Google Patents

Dispositif imageur a obturation globale Download PDF

Info

Publication number
FR3087607B1
FR3087607B1 FR1859583A FR1859583A FR3087607B1 FR 3087607 B1 FR3087607 B1 FR 3087607B1 FR 1859583 A FR1859583 A FR 1859583A FR 1859583 A FR1859583 A FR 1859583A FR 3087607 B1 FR3087607 B1 FR 3087607B1
Authority
FR
France
Prior art keywords
storage node
capacitive storage
vst1
imaging device
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1859583A
Other languages
English (en)
Other versions
FR3087607A1 (fr
Inventor
Pierre Malinge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1859583A priority Critical patent/FR3087607B1/fr
Priority to US16/599,875 priority patent/US10924700B2/en
Priority to CN201910984345.8A priority patent/CN111064911B/zh
Priority to CN201921734944.6U priority patent/CN211184097U/zh
Publication of FR3087607A1 publication Critical patent/FR3087607A1/fr
Application granted granted Critical
Publication of FR3087607B1 publication Critical patent/FR3087607B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0847—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory without any storage capacitor, i.e. with use of parasitic capacitances as storage elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/42—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of patterns using a display memory without fixed position correspondence between the display memory contents and the display position on the screen

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)

Abstract

Dispositif imageur (DIS) comportant une matrice (MAT) de pixels dans laquelle chaque pixel (PX) comprend : - une zone photosensible (PH) configurée pour intégrer un signal lumineux (SL) ; - une borne (VRTPIX) configurée pour délivrer un signal de référence ; - un premier nœud de stockage capacitif (VST1) configuré pour recevoir un signal représentatif du nombre de charges générées par ladite zone photosensible (PH) ; - un deuxième nœud de stockage capacitif (VST2) configuré pour recevoir ledit signal de référence ; - un premier transistor de transfert (M5) couplé entre le premier nœud de stockage capacitif (VST1) et la zone photosensible (PH), et un deuxième transistor de transfert (M8) couplé entre le deuxième nœud de stockage capacitif (VST2) et la borne (VRTPIX), les deux transistors de transfert (M5, M8) ayant une électrode de conduction commune et un substrat commun (SUB), ledit substrat commun (SUB) étant couplé au premier nœud de stockage capacitif (VST1).
FR1859583A 2018-10-17 2018-10-17 Dispositif imageur a obturation globale Active FR3087607B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1859583A FR3087607B1 (fr) 2018-10-17 2018-10-17 Dispositif imageur a obturation globale
US16/599,875 US10924700B2 (en) 2018-10-17 2019-10-11 Global shutter imager device
CN201910984345.8A CN111064911B (zh) 2018-10-17 2019-10-16 全局快门成像器装置
CN201921734944.6U CN211184097U (zh) 2018-10-17 2019-10-16 包括像素的矩阵的成像器装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1859583A FR3087607B1 (fr) 2018-10-17 2018-10-17 Dispositif imageur a obturation globale

Publications (2)

Publication Number Publication Date
FR3087607A1 FR3087607A1 (fr) 2020-04-24
FR3087607B1 true FR3087607B1 (fr) 2020-11-06

Family

ID=65861363

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1859583A Active FR3087607B1 (fr) 2018-10-17 2018-10-17 Dispositif imageur a obturation globale

Country Status (3)

Country Link
US (1) US10924700B2 (fr)
CN (2) CN111064911B (fr)
FR (1) FR3087607B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
JP4724313B2 (ja) * 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
US7078746B2 (en) * 2003-07-15 2006-07-18 Micron Technology, Inc. Image sensor with floating diffusion gate capacitor
US7078670B2 (en) * 2003-09-15 2006-07-18 Imagerlabs, Inc. Low noise charge gain circuit and CCD using same
WO2007119626A1 (fr) * 2006-03-31 2007-10-25 National University Corporation Shizuoka University Element semiconducteur de mesure de distance et element a solide de formation d'image
JP4325703B2 (ja) * 2007-05-24 2009-09-02 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理装置および信号処理方法、ならびに撮像装置
US8890047B2 (en) * 2011-09-21 2014-11-18 Aptina Imaging Corporation Stacked-chip imaging systems
CN103259985B (zh) * 2013-05-17 2016-08-17 昆山锐芯微电子有限公司 Cmos图像传感器、像素单元及其控制方法
JP2017130567A (ja) * 2016-01-21 2017-07-27 ソニー株式会社 固体撮像素子および撮像装置
US10263021B2 (en) * 2016-12-12 2019-04-16 Stmicroelectronics (Research & Development) Limited Global shutter pixels having shared isolated storage capacitors within an isolation structure surrounding the perimeter of a pixel array

Also Published As

Publication number Publication date
CN111064911B (zh) 2023-01-13
US20200128204A1 (en) 2020-04-23
CN111064911A (zh) 2020-04-24
FR3087607A1 (fr) 2020-04-24
US10924700B2 (en) 2021-02-16
CN211184097U (zh) 2020-08-04

Similar Documents

Publication Publication Date Title
US10469775B2 (en) High dynamic range storage gate pixel circuitry
US6232607B1 (en) High resolution flat panel for radiation imaging
US20170078604A1 (en) Image device, image system, and control method of image device
TW200807703A (en) Semiconductor imaging element
US9596426B2 (en) Imaging device, imaging system, and method for driving imaging device
FR2362495A1 (fr) Element photoelectrique pour dispositif de captation d'image semi-conducteur
US7834304B2 (en) Imaging device
JP2006261595A5 (fr)
JP2009152234A5 (fr)
US20220321862A1 (en) Pixel structure, image sensor device and system with pixel structure, and method of operating the pixel structure
US20180219035A1 (en) Solid state imaging device
KR970054279A (ko) 고체촬상장치
FR3075462B1 (fr) Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scene
US11011557B2 (en) Solid-state imaging device
TW451584B (en) Reducing striped noise in CMOS image sensors
FR3087607B1 (fr) Dispositif imageur a obturation globale
FR3065320B1 (fr) Pixel de detection de temps de vol
JP2016019079A5 (fr)
KR970056989A (ko) 컬러선형 전하결합소자 및 이의 구동방법
JPH0414545B2 (fr)
TW200621011A (en) Amplification type solid-state image pickup device
US6486470B2 (en) Compensation circuit for use in a high resolution amplified flat panel for radiation imaging
CA2526793A1 (fr) Capteur d'image matriciel en technologie cmos
WO2014178179A1 (fr) Élément de capture d'images à semiconducteurs et dispositif de capture d'images
JP6355401B2 (ja) 固体撮像装置及びカメラ

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20200424

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7