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FR3076067B1 - Procede de fabrication de composite a couche mince ultra-plane - Google Patents

Procede de fabrication de composite a couche mince ultra-plane Download PDF

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Publication number
FR3076067B1
FR3076067B1 FR1762805A FR1762805A FR3076067B1 FR 3076067 B1 FR3076067 B1 FR 3076067B1 FR 1762805 A FR1762805 A FR 1762805A FR 1762805 A FR1762805 A FR 1762805A FR 3076067 B1 FR3076067 B1 FR 3076067B1
Authority
FR
France
Prior art keywords
substrate
ultra
thin film
film composite
manufacturing ultra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1762805A
Other languages
English (en)
Other versions
FR3076067A1 (fr
Inventor
Florent Bassignot
Ludovic Gauthier-Manuel
Ausrine Bartasyte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Franche-Comte
Original Assignee
Universite de Franche-Comte
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Franche-Comte filed Critical Universite de Franche-Comte
Priority to FR1762805A priority Critical patent/FR3076067B1/fr
Priority to PCT/EP2018/085799 priority patent/WO2019121886A1/fr
Publication of FR3076067A1 publication Critical patent/FR3076067A1/fr
Application granted granted Critical
Publication of FR3076067B1 publication Critical patent/FR3076067B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)

Abstract

Un procédé de fabrication d'un composite à couche mince comprend les étapes suivantes : a) fourniture d'un premier substrat (14) et d'un substrat de référence (10) ayant une face ultra-plane (12) ; b) collage du premier substrat (14) sur la face ultra-plane (12) du substrat de référence (10) ; c) amincissement du premier substrat (14) jusqu'à une épaisseur submillimétrique prédéterminée de sorte à former une face ultra-plane amincie (17) ; d) collage d'un substrat support (18) sur la face ultra-plane amincie (17) ; e) élimination du substrat de référence (10).
FR1762805A 2017-12-21 2017-12-21 Procede de fabrication de composite a couche mince ultra-plane Expired - Fee Related FR3076067B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1762805A FR3076067B1 (fr) 2017-12-21 2017-12-21 Procede de fabrication de composite a couche mince ultra-plane
PCT/EP2018/085799 WO2019121886A1 (fr) 2017-12-21 2018-12-19 Procédé de fabrication de composite à couche mince ultra-plane

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1762805 2017-12-21
FR1762805A FR3076067B1 (fr) 2017-12-21 2017-12-21 Procede de fabrication de composite a couche mince ultra-plane

Publications (2)

Publication Number Publication Date
FR3076067A1 FR3076067A1 (fr) 2019-06-28
FR3076067B1 true FR3076067B1 (fr) 2020-01-10

Family

ID=62222759

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1762805A Expired - Fee Related FR3076067B1 (fr) 2017-12-21 2017-12-21 Procede de fabrication de composite a couche mince ultra-plane

Country Status (2)

Country Link
FR (1) FR3076067B1 (fr)
WO (1) WO2019121886A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921885A (en) 1973-06-28 1975-11-25 Rca Corp Method of bonding two bodies together
US20020187595A1 (en) * 1999-08-04 2002-12-12 Silicon Evolution, Inc. Methods for silicon-on-insulator (SOI) manufacturing with improved control and site thickness variations and improved bonding interface quality
JP2003531492A (ja) 2000-04-14 2003-10-21 エス オー イ テク シリコン オン インシュレータ テクノロジース 特に半導体材料製の基板又はインゴットから少なくとも一枚の薄層を切り出す方法
FR2995136B1 (fr) * 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
US9136337B2 (en) * 2012-10-12 2015-09-15 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
FR3027250B1 (fr) * 2014-10-17 2019-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage direct via des couches metalliques peu rugueuses

Also Published As

Publication number Publication date
WO2019121886A1 (fr) 2019-06-27
FR3076067A1 (fr) 2019-06-28

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Year of fee payment: 2

PLSC Search report ready

Effective date: 20190628

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Year of fee payment: 3

ST Notification of lapse

Effective date: 20210806