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FR3057396B1 - Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat - Google Patents

Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat Download PDF

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Publication number
FR3057396B1
FR3057396B1 FR1659763A FR1659763A FR3057396B1 FR 3057396 B1 FR3057396 B1 FR 3057396B1 FR 1659763 A FR1659763 A FR 1659763A FR 1659763 A FR1659763 A FR 1659763A FR 3057396 B1 FR3057396 B1 FR 3057396B1
Authority
FR
France
Prior art keywords
substrate
image sensor
manufacturing
type image
side type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1659763A
Other languages
English (en)
Other versions
FR3057396A1 (fr
Inventor
Walter Schwarzenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1659763A priority Critical patent/FR3057396B1/fr
Priority to TW106134583A priority patent/TWI737833B/zh
Priority to PCT/EP2017/075797 priority patent/WO2018069310A1/fr
Priority to EP17780436.6A priority patent/EP3523826B1/fr
Priority to KR1020197013421A priority patent/KR102457269B1/ko
Priority to CN201780061756.9A priority patent/CN109791938B/zh
Priority to US16/340,879 priority patent/US10903263B2/en
Priority to JP2019519328A priority patent/JP7051836B2/ja
Publication of FR3057396A1 publication Critical patent/FR3057396A1/fr
Application granted granted Critical
Publication of FR3057396B1 publication Critical patent/FR3057396B1/fr
Priority to US17/133,316 priority patent/US11552123B2/en
Priority to US18/145,976 priority patent/US20230127950A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne un substrat pour un capteur d'image de type face avant, comprenant successivement un substrat support (1) semi-conducteur dopé de type P-, une couche électriquement isolante (2) et une couche (3) semi-conductrice dite couche active, caractérisé en ce qu'il comprend, entre le substrat support (1) et la couche électriquement isolante (2), une couche épitaxiale (4) semi-conductrice dopée de type P+. L'invention concerne également un capteur d'image comprenant un tel substrat, ainsi qu'un procédé de fabrication dudit substrat.
FR1659763A 2016-10-10 2016-10-10 Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat Active FR3057396B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1659763A FR3057396B1 (fr) 2016-10-10 2016-10-10 Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
TW106134583A TWI737833B (zh) 2016-10-10 2017-10-06 前側型影像感測器及用於製造該感測器之方法
EP17780436.6A EP3523826B1 (fr) 2016-10-10 2017-10-10 Capteur d'image de type frontal et procédé de fabrication d'un tel capteur d'image de type frontal
KR1020197013421A KR102457269B1 (ko) 2016-10-10 2017-10-10 전면형 이미지 센서 및 그 센서를 제조하는 방법
CN201780061756.9A CN109791938B (zh) 2016-10-10 2017-10-10 正面型图像传感器和用于制造这种传感器的方法
US16/340,879 US10903263B2 (en) 2016-10-10 2017-10-10 Front-side type image sensor and method for manufacturing such a sensor
PCT/EP2017/075797 WO2018069310A1 (fr) 2016-10-10 2017-10-10 Capteur d'image de type frontal et procédé de fabrication d'un tel capteur d'image de type frontal
JP2019519328A JP7051836B2 (ja) 2016-10-10 2017-10-10 表側面型撮像素子およびその素子の製造方法
US17/133,316 US11552123B2 (en) 2016-10-10 2020-12-23 Front-side type image sensors
US18/145,976 US20230127950A1 (en) 2016-10-10 2022-12-23 Front-side type image sensors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1659763A FR3057396B1 (fr) 2016-10-10 2016-10-10 Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
FR1659763 2016-10-10

Publications (2)

Publication Number Publication Date
FR3057396A1 FR3057396A1 (fr) 2018-04-13
FR3057396B1 true FR3057396B1 (fr) 2018-12-14

Family

ID=57396731

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1659763A Active FR3057396B1 (fr) 2016-10-10 2016-10-10 Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat

Country Status (8)

Country Link
US (3) US10903263B2 (fr)
EP (1) EP3523826B1 (fr)
JP (1) JP7051836B2 (fr)
KR (1) KR102457269B1 (fr)
CN (1) CN109791938B (fr)
FR (1) FR3057396B1 (fr)
TW (1) TWI737833B (fr)
WO (1) WO2018069310A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3045677B1 (fr) * 2015-12-22 2019-07-19 Soitec Procede de fabrication d'une couche monocristalline, notamment piezoelectrique
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
US11676983B2 (en) 2020-01-07 2023-06-13 Powertech Technology Inc. Sensor with dam structure and method for manufacturing the same
TWI741903B (zh) * 2020-01-07 2021-10-01 力成科技股份有限公司 感測器及其製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235787B2 (ja) * 2001-10-03 2009-03-11 ソニー株式会社 固体撮像素子の製造方法
JP4123415B2 (ja) * 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
JP2004134672A (ja) * 2002-10-11 2004-04-30 Sony Corp 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
JP2005333070A (ja) * 2004-05-21 2005-12-02 Sony Corp 半導体装置の製造方法及び縦型オーバーフロードレイン構造及び電子シャッタ機能を有する表面照射型固体撮像装置並びにその製造方法
JP4211696B2 (ja) * 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
US20070045668A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. Vertical anti-blooming control and cross-talk reduction for imagers
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
FR2935067B1 (fr) 2008-08-14 2011-02-25 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice plan de masse enterre
EP2200084A1 (fr) * 2008-12-22 2010-06-23 S.O.I. TEC Silicon Procédé de fabrication d'un capteur d'image rétro-éclairé
JP2011014673A (ja) 2009-07-01 2011-01-20 Panasonic Corp Ｓｏｉ基板とその製造方法およびそれを用いた固体撮像装置の製造方法
EP2282332B1 (fr) * 2009-08-04 2012-06-27 S.O.I. TEC Silicon Methode de fabrication d'un substrat semiconducteur
FR3002812B1 (fr) * 2013-03-01 2016-08-05 St Microelectronics Crolles 2 Sas Procede de transfert de couche
FR3027731B1 (fr) * 2014-10-24 2018-01-05 Stmicroelectronics Sa Capteur d'image face avant a courant d'obscurite reduit sur substrat soi

Also Published As

Publication number Publication date
CN109791938A (zh) 2019-05-21
TWI737833B (zh) 2021-09-01
EP3523826A1 (fr) 2019-08-14
JP7051836B2 (ja) 2022-04-11
US11552123B2 (en) 2023-01-10
US10903263B2 (en) 2021-01-26
CN109791938B (zh) 2023-04-28
JP2019534556A (ja) 2019-11-28
US20230127950A1 (en) 2023-04-27
US20210118936A1 (en) 2021-04-22
KR102457269B1 (ko) 2022-10-20
US20190267425A1 (en) 2019-08-29
KR20190061070A (ko) 2019-06-04
TW201826514A (zh) 2018-07-16
FR3057396A1 (fr) 2018-04-13
EP3523826B1 (fr) 2021-11-17
WO2018069310A1 (fr) 2018-04-19

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