FR2966268B1 - Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant. - Google Patents
Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant.Info
- Publication number
- FR2966268B1 FR2966268B1 FR1058474A FR1058474A FR2966268B1 FR 2966268 B1 FR2966268 B1 FR 2966268B1 FR 1058474 A FR1058474 A FR 1058474A FR 1058474 A FR1058474 A FR 1058474A FR 2966268 B1 FR2966268 B1 FR 2966268B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- detection
- initial set
- semiconductor body
- box retrieval
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1058474A FR2966268B1 (fr) | 2010-10-18 | 2010-10-18 | Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant. |
US13/243,620 US8502383B2 (en) | 2010-10-18 | 2011-09-23 | Integrated circuit including detection circuit to detect electrical energy delivered by a thermoelectric material |
US13/959,496 US9331027B2 (en) | 2010-10-18 | 2013-08-05 | Method for detecting electrical energy produced from a thermoelectric material contained in an integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1058474A FR2966268B1 (fr) | 2010-10-18 | 2010-10-18 | Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2966268A1 FR2966268A1 (fr) | 2012-04-20 |
FR2966268B1 true FR2966268B1 (fr) | 2013-08-16 |
Family
ID=44022971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1058474A Active FR2966268B1 (fr) | 2010-10-18 | 2010-10-18 | Procédé comprenant une détection d'une remise en boitier d'un circuit intégré après une mise en boitier initiale, et circuit intégré correspondant. |
Country Status (2)
Country | Link |
---|---|
US (2) | US8502383B2 (fr) |
FR (1) | FR2966268B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8779592B2 (en) * | 2012-05-01 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via-free interconnect structure with self-aligned metal line interconnections |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2577338B1 (fr) * | 1985-02-12 | 1987-03-06 | Eurotechnique Sa | Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede |
US5191405A (en) * | 1988-12-23 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Three-dimensional stacked lsi |
US6069312A (en) * | 1994-01-28 | 2000-05-30 | California Institute Of Technology | Thermoelectric materials with filled skutterudite structure for thermoelectric devices |
US5955781A (en) * | 1998-01-13 | 1999-09-21 | International Business Machines Corporation | Embedded thermal conductors for semiconductor chips |
US6188011B1 (en) * | 1998-01-20 | 2001-02-13 | Marlow Industries, Inc. | Thermoelectric materials fabricated from clathrate compounds and other materials which form an inclusion complex and method for optimizing selected thermoelectric properties |
US6316801B1 (en) * | 1998-03-04 | 2001-11-13 | Nec Corporation | Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same |
EP1055980B1 (fr) * | 1998-12-14 | 2009-06-10 | Seiko Epson Corporation | Dispositif electronique et procede de commande associe |
JP2002107224A (ja) * | 2000-09-29 | 2002-04-10 | Toshiba Corp | 赤外線センサ及びその製造方法 |
US6559538B1 (en) * | 2000-10-20 | 2003-05-06 | Bae Systems Information And Electronic Systems Integration Inc. | Integrated circuit device having a built-in thermoelectric cooling mechanism |
DE10104219B4 (de) * | 2001-01-31 | 2006-05-24 | Infineon Technologies Ag | Anordnung zur aktiven Kühlung eines Halbleiterbausteins und Verfahren zum Betrieb der Anordnung |
US6518661B1 (en) * | 2001-04-05 | 2003-02-11 | Advanced Micro Devices, Inc. | Apparatus for metal stack thermal management in semiconductor devices |
EP1532683B1 (fr) * | 2002-06-04 | 2011-11-09 | NDS Limited | Prévention d'intervention non autorisée dans des dispositifs électroniques |
US6639242B1 (en) * | 2002-07-01 | 2003-10-28 | International Business Machines Corporation | Monolithically integrated solid-state SiGe thermoelectric energy converter for high speed and low power circuits |
US7406185B2 (en) * | 2003-04-16 | 2008-07-29 | Ligh Tuning Technology Inc. | Thermoelectric sensor for fingerprint thermal imaging |
US7291878B2 (en) * | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
US7638705B2 (en) * | 2003-12-11 | 2009-12-29 | Nextreme Thermal Solutions, Inc. | Thermoelectric generators for solar conversion and related systems and methods |
US7589417B2 (en) * | 2004-02-12 | 2009-09-15 | Intel Corporation | Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same |
JP5201780B2 (ja) * | 2004-06-14 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 光検出器および光検出装置 |
TWI395321B (zh) * | 2005-03-31 | 2013-05-01 | Semiconductor Energy Lab | 半導體裝置及其驅動方法 |
JP2007214285A (ja) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置 |
US20080277778A1 (en) * | 2007-05-10 | 2008-11-13 | Furman Bruce K | Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby |
US7888794B2 (en) * | 2008-02-18 | 2011-02-15 | Infineon Technologies Ag | Semiconductor device and method |
US8264055B2 (en) * | 2008-08-08 | 2012-09-11 | Texas Instruments Incorporated | CMOS thermoelectric refrigerator |
DE102008049726B4 (de) * | 2008-09-30 | 2012-02-09 | Advanced Micro Devices, Inc. | Gestapelte Chipkonfiguration mit stromgespeistem Wärmeübertragungssystem und Verfahren zum Steuern der Temperatur in einem Halbleiterbauelement |
US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
FR2946460A1 (fr) * | 2009-06-04 | 2010-12-10 | St Microelectronics Rousset | Procede de generation d'energie electrique dans un circuit integre lors du fonctionnement de celui-ci, circuit integre correspondant et procede de fabrication |
US8461035B1 (en) * | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
CN102356305A (zh) * | 2010-05-27 | 2012-02-15 | 松下电器产业株式会社 | 热电变换器件和辐射检测器以及使用它的辐射检测方法 |
-
2010
- 2010-10-18 FR FR1058474A patent/FR2966268B1/fr active Active
-
2011
- 2011-09-23 US US13/243,620 patent/US8502383B2/en active Active
-
2013
- 2013-08-05 US US13/959,496 patent/US9331027B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120091553A1 (en) | 2012-04-19 |
US8502383B2 (en) | 2013-08-06 |
US20130314150A1 (en) | 2013-11-28 |
FR2966268A1 (fr) | 2012-04-20 |
US9331027B2 (en) | 2016-05-03 |
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