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FR2812453B1 - Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions , dispositif ainsi obtenu et procede d'obtention de celui- ci - Google Patents

Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions , dispositif ainsi obtenu et procede d'obtention de celui- ci

Info

Publication number
FR2812453B1
FR2812453B1 FR0009731A FR0009731A FR2812453B1 FR 2812453 B1 FR2812453 B1 FR 2812453B1 FR 0009731 A FR0009731 A FR 0009731A FR 0009731 A FR0009731 A FR 0009731A FR 2812453 B1 FR2812453 B1 FR 2812453B1
Authority
FR
France
Prior art keywords
obtaining
same
electronic device
dimensional interconnection
decoupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0009731A
Other languages
English (en)
Other versions
FR2812453A1 (fr
Inventor
Christian Val
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3D Plus SA
Original Assignee
3D Plus SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3D Plus SA filed Critical 3D Plus SA
Priority to FR0009731A priority Critical patent/FR2812453B1/fr
Priority to EP01956626A priority patent/EP1312116A1/fr
Priority to JP2002514788A priority patent/JP2004505451A/ja
Priority to PCT/FR2001/002382 priority patent/WO2002009182A1/fr
Priority to US10/333,855 priority patent/US20030173673A1/en
Publication of FR2812453A1 publication Critical patent/FR2812453A1/fr
Application granted granted Critical
Publication of FR2812453B1 publication Critical patent/FR2812453B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0009731A 2000-07-25 2000-07-25 Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions , dispositif ainsi obtenu et procede d'obtention de celui- ci Expired - Lifetime FR2812453B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0009731A FR2812453B1 (fr) 2000-07-25 2000-07-25 Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions , dispositif ainsi obtenu et procede d'obtention de celui- ci
EP01956626A EP1312116A1 (fr) 2000-07-25 2001-07-20 Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions
JP2002514788A JP2004505451A (ja) 2000-07-25 2001-07-20 立体相互結合を伴う電子装置の分配型シールディング及び減結合方法、そのようにして得られた装置及び該装置の製造方法
PCT/FR2001/002382 WO2002009182A1 (fr) 2000-07-25 2001-07-20 Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions
US10/333,855 US20030173673A1 (en) 2000-07-25 2001-07-20 Method for distributed shielding and/or bypass for electronic device with three dimensional interconnection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0009731A FR2812453B1 (fr) 2000-07-25 2000-07-25 Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions , dispositif ainsi obtenu et procede d'obtention de celui- ci

Publications (2)

Publication Number Publication Date
FR2812453A1 FR2812453A1 (fr) 2002-02-01
FR2812453B1 true FR2812453B1 (fr) 2004-08-20

Family

ID=8852887

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0009731A Expired - Lifetime FR2812453B1 (fr) 2000-07-25 2000-07-25 Procede de blindage et/ou de decouplage repartis pour un dispositif electronique a interconnexion en trois dimensions , dispositif ainsi obtenu et procede d'obtention de celui- ci

Country Status (5)

Country Link
US (1) US20030173673A1 (fr)
EP (1) EP1312116A1 (fr)
JP (1) JP2004505451A (fr)
FR (1) FR2812453B1 (fr)
WO (1) WO2002009182A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3875568B2 (ja) * 2002-02-05 2007-01-31 株式会社東芝 半導体装置及びその製造方法
US6967411B2 (en) * 2002-02-07 2005-11-22 Irvine Sensors Corporation Stackable layers containing ball grid array packages
US7242082B2 (en) * 2002-02-07 2007-07-10 Irvine Sensors Corp. Stackable layer containing ball grid array package
AU2003297542A1 (en) * 2002-12-31 2004-07-29 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure incorporating a processing handle member
US7064055B2 (en) 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
US6787902B1 (en) * 2003-03-27 2004-09-07 Intel Corporation Package structure with increased capacitance and method
FR2861930B1 (fr) 2003-11-05 2006-02-03 Dassault Aviat Dispositif d'echange d'informations
US6943294B2 (en) * 2003-12-22 2005-09-13 Intel Corporation Integrating passive components on spacer in stacked dies
JP2006186053A (ja) * 2004-12-27 2006-07-13 Shinko Electric Ind Co Ltd 積層型半導体装置
FR2884049B1 (fr) 2005-04-01 2007-06-22 3D Plus Sa Sa Module electronique de faible epaisseur comprenant un empilement de boitiers electroniques a billes de connexion
FR2894070B1 (fr) * 2005-11-30 2008-04-11 3D Plus Sa Sa Module electronique 3d
FR2895568B1 (fr) * 2005-12-23 2008-02-08 3D Plus Sa Sa Procede de fabrication collective de modules electroniques 3d
US7990727B1 (en) 2006-04-03 2011-08-02 Aprolase Development Co., Llc Ball grid array stack
US7402854B2 (en) * 2006-07-31 2008-07-22 International Business Machines Corporation Three-dimensional cascaded power distribution in a semiconductor device
FR2905198B1 (fr) * 2006-08-22 2008-10-17 3D Plus Sa Sa Procede de fabrication collective de modules electroniques 3d
FR2911995B1 (fr) * 2007-01-30 2009-03-06 3D Plus Sa Sa Procede d'interconnexion de tranches electroniques
US7714426B1 (en) 2007-07-07 2010-05-11 Keith Gann Ball grid array package format layers and structure
CN102144176B (zh) 2008-09-08 2013-11-06 皇家飞利浦电子股份有限公司 具有转换片和互连层堆栈的辐射探测器的生产方法
FR2940521B1 (fr) 2008-12-19 2011-11-11 3D Plus Procede de fabrication collective de modules electroniques pour montage en surface
US8767408B2 (en) * 2012-02-08 2014-07-01 Apple Inc. Three dimensional passive multi-component structures
US10321569B1 (en) 2015-04-29 2019-06-11 Vpt, Inc. Electronic module and method of making same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908574A (en) * 1986-09-03 1990-03-13 Extrude Hone Corporation Capacitor array sensors for determining conformity to surface shape
FR2645681B1 (fr) * 1989-04-07 1994-04-08 Thomson Csf Dispositif d'interconnexion verticale de pastilles de circuits integres et son procede de fabrication
US5397916A (en) * 1991-12-10 1995-03-14 Normington; Peter J. C. Semiconductor device including stacked die
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US6005778A (en) * 1995-06-15 1999-12-21 Honeywell Inc. Chip stacking and capacitor mounting arrangement including spacers
US5646446A (en) * 1995-12-22 1997-07-08 Fairchild Space And Defense Corporation Three-dimensional flexible assembly of integrated circuits
US5864177A (en) * 1996-12-12 1999-01-26 Honeywell Inc. Bypass capacitors for chip and wire circuit assembly

Also Published As

Publication number Publication date
FR2812453A1 (fr) 2002-02-01
WO2002009182A1 (fr) 2002-01-31
EP1312116A1 (fr) 2003-05-21
US20030173673A1 (en) 2003-09-18
JP2004505451A (ja) 2004-02-19

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