FR2883661B1 - Transistor a effet de champ multi-grille a canal multi-couche - Google Patents
Transistor a effet de champ multi-grille a canal multi-coucheInfo
- Publication number
- FR2883661B1 FR2883661B1 FR0603975A FR0603975A FR2883661B1 FR 2883661 B1 FR2883661 B1 FR 2883661B1 FR 0603975 A FR0603975 A FR 0603975A FR 0603975 A FR0603975 A FR 0603975A FR 2883661 B1 FR2883661 B1 FR 2883661B1
- Authority
- FR
- France
- Prior art keywords
- layer channel
- field effect
- effect transistor
- channel field
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0603975A FR2883661B1 (fr) | 2006-05-04 | 2006-05-04 | Transistor a effet de champ multi-grille a canal multi-couche |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0603975A FR2883661B1 (fr) | 2006-05-04 | 2006-05-04 | Transistor a effet de champ multi-grille a canal multi-couche |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2883661A1 FR2883661A1 (fr) | 2006-09-29 |
| FR2883661B1 true FR2883661B1 (fr) | 2008-04-25 |
Family
ID=36956234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0603975A Expired - Fee Related FR2883661B1 (fr) | 2006-05-04 | 2006-05-04 | Transistor a effet de champ multi-grille a canal multi-couche |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2883661B1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8817358B2 (en) * | 2012-08-02 | 2014-08-26 | Qualcomm Mems Technologies, Inc. | Thin film stack with surface-conditioning buffer layers and related methods |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461250A (en) * | 1992-08-10 | 1995-10-24 | International Business Machines Corporation | SiGe thin film or SOI MOSFET and method for making the same |
| US6326667B1 (en) * | 1999-09-09 | 2001-12-04 | Kabushiki Kaisha Toshiba | Semiconductor devices and methods for producing semiconductor devices |
| FR2799305B1 (fr) * | 1999-10-05 | 2004-06-18 | St Microelectronics Sa | Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu |
| JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
| FR2842350B1 (fr) * | 2002-07-09 | 2005-05-13 | Procede de transfert d'une couche de materiau semiconducteur contraint |
-
2006
- 2006-05-04 FR FR0603975A patent/FR2883661B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2883661A1 (fr) | 2006-09-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20120423 |
|
| ST | Notification of lapse |
Effective date: 20131031 |