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FR2859043B1 - Dispositif de memoire magnetique permanente et son procede de fabrication - Google Patents

Dispositif de memoire magnetique permanente et son procede de fabrication

Info

Publication number
FR2859043B1
FR2859043B1 FR0409013A FR0409013A FR2859043B1 FR 2859043 B1 FR2859043 B1 FR 2859043B1 FR 0409013 A FR0409013 A FR 0409013A FR 0409013 A FR0409013 A FR 0409013A FR 2859043 B1 FR2859043 B1 FR 2859043B1
Authority
FR
France
Prior art keywords
manufacturing
same
memory device
magnetic memory
permanent magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0409013A
Other languages
English (en)
Other versions
FR2859043A1 (fr
Inventor
Hiroshi Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2859043A1 publication Critical patent/FR2859043A1/fr
Application granted granted Critical
Publication of FR2859043B1 publication Critical patent/FR2859043B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
FR0409013A 2003-08-21 2004-08-20 Dispositif de memoire magnetique permanente et son procede de fabrication Expired - Fee Related FR2859043B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003297593A JP2005072139A (ja) 2003-08-21 2003-08-21 磁気記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2859043A1 FR2859043A1 (fr) 2005-02-25
FR2859043B1 true FR2859043B1 (fr) 2007-12-07

Family

ID=34114157

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0409013A Expired - Fee Related FR2859043B1 (fr) 2003-08-21 2004-08-20 Dispositif de memoire magnetique permanente et son procede de fabrication

Country Status (5)

Country Link
US (1) US7352041B2 (fr)
JP (1) JP2005072139A (fr)
KR (1) KR20050020694A (fr)
FR (1) FR2859043B1 (fr)
TW (1) TWI289911B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828639B2 (en) * 2002-07-17 2004-12-07 Micron Technology, Inc. Process flow for building MRAM structures
US7543211B2 (en) * 2005-01-31 2009-06-02 Everspin Technologies, Inc. Toggle memory burst
KR100691004B1 (ko) * 2005-04-15 2007-03-09 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
WO2008108111A1 (fr) * 2007-03-07 2008-09-12 Nec Corporation Dispositif de corps magnétique et dispositif de stockage magnétique
US20090117285A1 (en) * 2007-08-08 2009-05-07 Dinderman Michael A ROOM TEMPERATURE ELECTROLESS IRON BATH OPERATING WITHOUT A GALVANIC COUPLE FOR DEPOSITION OF FERROMAGNETIC AMORPHOUS FeB FILMS
US20090218644A1 (en) * 2008-02-29 2009-09-03 Gill Yong Lee Integrated Circuit, Memory Device, and Method of Manufacturing an Integrated Circuit
JP2009290073A (ja) * 2008-05-30 2009-12-10 Renesas Technology Corp 半導体装置及びその製造方法
US8273582B2 (en) 2009-07-09 2012-09-25 Crocus Technologies Method for use in making electronic devices having thin-film magnetic components
US8461043B2 (en) 2011-04-11 2013-06-11 Micron Technology, Inc. Barrier layer for integrated circuit contacts
KR101998676B1 (ko) * 2012-07-20 2019-07-10 삼성전자주식회사 자기 메모리 장치 및 그 제조 방법
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
CN103887422A (zh) * 2012-12-20 2014-06-25 中芯国际集成电路制造(上海)有限公司 磁阻存储器及其形成方法
JP6169500B2 (ja) * 2014-01-31 2017-07-26 東京エレクトロン株式会社 無電解めっき方法、無電解めっき装置および記憶媒体
US9412935B1 (en) * 2015-09-07 2016-08-09 Yeu-Chung LIN Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array
US9614003B1 (en) * 2015-10-21 2017-04-04 Globalfoundries Inc. Method of forming a memory device structure and memory device structure
US9893120B2 (en) * 2016-04-15 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US20180138292A1 (en) * 2016-11-11 2018-05-17 Sandisk Technologies Llc Methods and apparatus for three-dimensional nonvolatile memory
JP2018129374A (ja) * 2017-02-07 2018-08-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
DE102018108545B4 (de) * 2017-11-30 2021-05-20 Taiwan Semiconductor Manufacturing Co. Ltd. Magnetischer direktzugriffsspeicher und herstellungsverfahren dafür
US11024801B2 (en) 2018-06-27 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Diffusion layer for magnetic tunnel junctions
CN113506669A (zh) * 2021-06-07 2021-10-15 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
US20230284540A1 (en) * 2022-03-04 2023-09-07 Taiwan Semiconductor Manufacturing Company Limited Resistive memory device with ultra-thin barrier layer and methods of forming the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940319A (en) 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6153443A (en) 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
JP2001164375A (ja) * 1999-12-03 2001-06-19 Sony Corp 無電解メッキ浴および導電膜の形成方法
JP2001355074A (ja) * 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US20020081842A1 (en) * 2000-04-14 2002-06-27 Sambucetti Carlos J. Electroless metal liner formation methods
US6555858B1 (en) 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
JP3944437B2 (ja) * 2001-10-05 2007-07-11 株式会社半導体理工学研究センター 無電解メッキ方法、埋め込み配線の形成方法、及び埋め込み配線
JP3567377B2 (ja) * 2002-01-09 2004-09-22 独立行政法人 科学技術振興機構 半導体集積回路装置の製造方法
JP4157707B2 (ja) * 2002-01-16 2008-10-01 株式会社東芝 磁気メモリ
JP2003297593A (ja) 2002-03-28 2003-10-17 Mitsubishi Electric Corp 放電灯点灯装置
US6943038B2 (en) * 2002-12-19 2005-09-13 Freescale Semiconductor, Inc. Method for fabricating a flux concentrating system for use in a magnetoelectronics device
US6798004B1 (en) * 2003-04-22 2004-09-28 Freescale Semiconductor, Inc. Magnetoresistive random access memory devices and methods for fabricating the same
JP2005005605A (ja) * 2003-06-13 2005-01-06 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JP2005072139A (ja) 2005-03-17
KR20050020694A (ko) 2005-03-04
TWI289911B (en) 2007-11-11
US20050052938A1 (en) 2005-03-10
FR2859043A1 (fr) 2005-02-25
US7352041B2 (en) 2008-04-01
TW200518279A (en) 2005-06-01

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140430