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FR2409791A1 - Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon - Google Patents

Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon

Info

Publication number
FR2409791A1
FR2409791A1 FR7735603A FR7735603A FR2409791A1 FR 2409791 A1 FR2409791 A1 FR 2409791A1 FR 7735603 A FR7735603 A FR 7735603A FR 7735603 A FR7735603 A FR 7735603A FR 2409791 A1 FR2409791 A1 FR 2409791A1
Authority
FR
France
Prior art keywords
tube
furnace
diffusion
atmosphere
semiconductor wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735603A
Other languages
French (fr)
Other versions
FR2409791B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR7735603A priority Critical patent/FR2409791A1/en
Publication of FR2409791A1 publication Critical patent/FR2409791A1/en
Application granted granted Critical
Publication of FR2409791B1 publication Critical patent/FR2409791B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A dopant is diffused into wafers of semiconducting material in an appts. comprising a tube passing through a furnace. The tube extends at both its ends beyond the furnace, and it has in a hot zone of homogeneous temp. a dopant source and wafers of material to be treated. The appts. also includes means for introducing, into one end of the tube, a neutral gas under pressure, means of opening and closing that end of the tube, the opening having near enough the same dia. as the tube, and means of limiting the dispersion of the dopant in the gaseous phase outside the zone of homogeneous temp. This eliminates the expense involved both, in sealed- and in open-tube techniques, whilst maintaining their advantages, such as purity and uniformity of prod.
FR7735603A 1977-11-25 1977-11-25 Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon Granted FR2409791A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7735603A FR2409791A1 (en) 1977-11-25 1977-11-25 Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7735603A FR2409791A1 (en) 1977-11-25 1977-11-25 Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon

Publications (2)

Publication Number Publication Date
FR2409791A1 true FR2409791A1 (en) 1979-06-22
FR2409791B1 FR2409791B1 (en) 1981-11-27

Family

ID=9198091

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7735603A Granted FR2409791A1 (en) 1977-11-25 1977-11-25 Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon

Country Status (1)

Country Link
FR (1) FR2409791A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2606129A1 (en) * 1986-10-30 1988-05-06 Ibm France Improved quartz tube for thermal treatment of semiconductor wafers
FR2747402A1 (en) * 1996-04-15 1997-10-17 Sgs Thomson Microelectronics Low pressure diffusion furnace for doping semiconductors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2161798A1 (en) * 1971-11-30 1973-07-13 Radiotechnique Compelec
FR2172769A1 (en) * 1972-02-21 1973-10-05 Radiotechnique Compelec Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug
FR2178751A1 (en) * 1972-04-05 1973-11-16 Radiotechnique Compelec
FR2284982A1 (en) * 1974-09-16 1976-04-09 Radiotechnique Compelec METHOD OF DIFFUSION OF IMPURITIES IN SEMICONDUCTOR BODIES
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2161798A1 (en) * 1971-11-30 1973-07-13 Radiotechnique Compelec
FR2172769A1 (en) * 1972-02-21 1973-10-05 Radiotechnique Compelec Semiconductor doping - in enclosed vessel with source of impurities and porous inner plug
FR2178751A1 (en) * 1972-04-05 1973-11-16 Radiotechnique Compelec
FR2284982A1 (en) * 1974-09-16 1976-04-09 Radiotechnique Compelec METHOD OF DIFFUSION OF IMPURITIES IN SEMICONDUCTOR BODIES
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2606129A1 (en) * 1986-10-30 1988-05-06 Ibm France Improved quartz tube for thermal treatment of semiconductor wafers
FR2747402A1 (en) * 1996-04-15 1997-10-17 Sgs Thomson Microelectronics Low pressure diffusion furnace for doping semiconductors

Also Published As

Publication number Publication date
FR2409791B1 (en) 1981-11-27

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