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FR2386359A1 - CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED - Google Patents

CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED

Info

Publication number
FR2386359A1
FR2386359A1 FR7710603A FR7710603A FR2386359A1 FR 2386359 A1 FR2386359 A1 FR 2386359A1 FR 7710603 A FR7710603 A FR 7710603A FR 7710603 A FR7710603 A FR 7710603A FR 2386359 A1 FR2386359 A1 FR 2386359A1
Authority
FR
France
Prior art keywords
strip
esp
bath
products obtained
deposit process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7710603A
Other languages
French (fr)
Other versions
FR2386359B1 (en
Inventor
Christian Belouet
Jean-Jacques Brissot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7710603A priority Critical patent/FR2386359A1/en
Publication of FR2386359A1 publication Critical patent/FR2386359A1/en
Application granted granted Critical
Publication of FR2386359B1 publication Critical patent/FR2386359B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
    • B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
    • B05C3/12—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length
    • B05C3/125—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length the work being a web, band, strip or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
    • C23C2/36—Elongated material
    • C23C2/40—Plates; Strips
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

A material (b) is deposited on both surfaces of an endless strip (a). The strip (a) is fed continuously through a molten bath of material (b) soonly a part of the strip is immersed; and the point of entry of the strip into bath (b) is different to its point of exit. Strip (a) is pref. carbon, or a metal strip coated with pyrolytic carbon (1) and is coated with silicon (b), esp. to mfr. semiconductor devices. The pref. appts. consists of a tank or U-shaped tube contg. material (b), esp. Si, and fitted with a heater to melt the Si; and the strip (a) is fed through the bath continuously. Esp. used for the deposition of polycrystalline Si (b) onto a substrate (a) for mfg. solar batteries.
FR7710603A 1977-04-07 1977-04-07 CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED Granted FR2386359A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7710603A FR2386359A1 (en) 1977-04-07 1977-04-07 CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7710603A FR2386359A1 (en) 1977-04-07 1977-04-07 CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED

Publications (2)

Publication Number Publication Date
FR2386359A1 true FR2386359A1 (en) 1978-11-03
FR2386359B1 FR2386359B1 (en) 1982-09-03

Family

ID=9189189

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7710603A Granted FR2386359A1 (en) 1977-04-07 1977-04-07 CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED

Country Status (1)

Country Link
FR (1) FR2386359A1 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4383130A (en) * 1981-05-04 1983-05-10 Alpha Solarco Inc. Solar energy cell and method of manufacture
US4443653A (en) * 1980-10-24 1984-04-17 The University Of Delaware Thin film photovoltaic device with multilayer substrate
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips
WO1985004196A1 (en) * 1984-03-16 1985-09-26 Compagnie Generale D'electricite Device for depositing a silicon layer on a carbon ribbon
US4577588A (en) * 1983-08-29 1986-03-25 Compagnie Generale D'electricite Device for process-type deposition of polycrystalline silicon on carbon film
US4695480A (en) * 1985-03-25 1987-09-22 Compagnie Generale D'electricite Method and apparatus for drawing a tape constituted by a support coated in a layer of semiconductor material, said tape being drawn from a liquid bath of said material
EP0477710A1 (en) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Apparatus for the continuous coating of liquid metal
US5902416A (en) * 1993-08-27 1999-05-11 Twin Solar-Technik Entwicklungs-Gmbh Element of a photovoltaic solar cell and a process for the production thereof as well as the arrangement thereof in a solar cell
FR2864554A1 (en) * 2003-12-24 2005-07-01 Solarforce DEVICE FOR DEPOSITING A POLYCRYSTALLINE SILICON LAYER ON A SUPPORT
FR2868598A1 (en) * 2004-04-05 2005-10-07 Solarforce Soc Par Actions Sim PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON PLATES
US20090050051A1 (en) * 2005-04-22 2009-02-26 Claude Remy Method for Growing Thin Semiconductor Ribbons
WO2011138532A1 (en) 2010-05-04 2011-11-10 Solarforce Carbon tape intended to receive a layer of a semiconductor material
WO2017211629A1 (en) * 2016-06-07 2017-12-14 Ingenieurbüro Für Thermische Prozesse Dr. Erfurt Method for producing a solar cell structure

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443653A (en) * 1980-10-24 1984-04-17 The University Of Delaware Thin film photovoltaic device with multilayer substrate
US4383130A (en) * 1981-05-04 1983-05-10 Alpha Solarco Inc. Solar energy cell and method of manufacture
US4478880A (en) * 1982-06-25 1984-10-23 Compagnie Generale D'electricite Method of fabricating polycrystalline silicon strips
US4577588A (en) * 1983-08-29 1986-03-25 Compagnie Generale D'electricite Device for process-type deposition of polycrystalline silicon on carbon film
WO1985004196A1 (en) * 1984-03-16 1985-09-26 Compagnie Generale D'electricite Device for depositing a silicon layer on a carbon ribbon
EP0157686A1 (en) * 1984-03-16 1985-10-09 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Apparatus for the deposition of a silicon coating on a carbon ribbon
US4616595A (en) * 1984-03-16 1986-10-14 Compagnie Generale D'electricite Device for depositing a layer of silicon on a carbon tape
US4695480A (en) * 1985-03-25 1987-09-22 Compagnie Generale D'electricite Method and apparatus for drawing a tape constituted by a support coated in a layer of semiconductor material, said tape being drawn from a liquid bath of said material
EP0477710A1 (en) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Apparatus for the continuous coating of liquid metal
US5902416A (en) * 1993-08-27 1999-05-11 Twin Solar-Technik Entwicklungs-Gmbh Element of a photovoltaic solar cell and a process for the production thereof as well as the arrangement thereof in a solar cell
FR2864554A1 (en) * 2003-12-24 2005-07-01 Solarforce DEVICE FOR DEPOSITING A POLYCRYSTALLINE SILICON LAYER ON A SUPPORT
WO2005064034A3 (en) * 2003-12-24 2005-09-01 Solarforce Device for depositing a polycrystalline silicon layer on a support
AU2004309149B2 (en) * 2003-12-24 2009-10-08 Solarforce Device for depositing a polycrystalline silicon layer on a support
US8256373B2 (en) 2003-12-24 2012-09-04 Solarforce Device for depositing a layer of polycrystalline silicon on a support
FR2868598A1 (en) * 2004-04-05 2005-10-07 Solarforce Soc Par Actions Sim PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON PLATES
WO2005101527A1 (en) * 2004-04-05 2005-10-27 Solarforce Method for making polysilicon films
US8506704B2 (en) 2004-04-05 2013-08-13 Solarforce Method of fabricating polycrystalline silicon plates
US20090050051A1 (en) * 2005-04-22 2009-02-26 Claude Remy Method for Growing Thin Semiconductor Ribbons
WO2011138532A1 (en) 2010-05-04 2011-11-10 Solarforce Carbon tape intended to receive a layer of a semiconductor material
WO2017211629A1 (en) * 2016-06-07 2017-12-14 Ingenieurbüro Für Thermische Prozesse Dr. Erfurt Method for producing a solar cell structure

Also Published As

Publication number Publication date
FR2386359B1 (en) 1982-09-03

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