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FR2290032A1 - Application d'un motif de couche conductrice comportant des elements situes a petite distance les uns des autres, en particulier pour la fabrication de dispositifs semi-conducteurs - Google Patents

Application d'un motif de couche conductrice comportant des elements situes a petite distance les uns des autres, en particulier pour la fabrication de dispositifs semi-conducteurs

Info

Publication number
FR2290032A1
FR2290032A1 FR7532460A FR7532460A FR2290032A1 FR 2290032 A1 FR2290032 A1 FR 2290032A1 FR 7532460 A FR7532460 A FR 7532460A FR 7532460 A FR7532460 A FR 7532460A FR 2290032 A1 FR2290032 A1 FR 2290032A1
Authority
FR
France
Prior art keywords
manufacture
conductive layer
application
semiconductor devices
short distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7532460A
Other languages
English (en)
Other versions
FR2290032B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2290032A1 publication Critical patent/FR2290032A1/fr
Application granted granted Critical
Publication of FR2290032B1 publication Critical patent/FR2290032B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
FR7532460A 1974-10-25 1975-10-23 Application d'un motif de couche conductrice comportant des elements situes a petite distance les uns des autres, en particulier pour la fabrication de dispositifs semi-conducteurs Granted FR2290032A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7413977A NL7413977A (nl) 1974-10-25 1974-10-25 Aanbrengen van een geleiderlaagpatroon met op een geringe onderlinge afstand gelegen delen, in het bijzonder bij de vervaardiging van half- geleiderinrichtingen.

Publications (2)

Publication Number Publication Date
FR2290032A1 true FR2290032A1 (fr) 1976-05-28
FR2290032B1 FR2290032B1 (fr) 1980-12-12

Family

ID=19822335

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7532460A Granted FR2290032A1 (fr) 1974-10-25 1975-10-23 Application d'un motif de couche conductrice comportant des elements situes a petite distance les uns des autres, en particulier pour la fabrication de dispositifs semi-conducteurs

Country Status (12)

Country Link
US (1) US4301191A (fr)
JP (1) JPS5165876A (fr)
AU (1) AU503144B2 (fr)
CA (1) CA1043471A (fr)
CH (1) CH595699A5 (fr)
DE (1) DE2547447A1 (fr)
ES (1) ES442026A1 (fr)
FR (1) FR2290032A1 (fr)
GB (1) GB1524870A (fr)
IT (1) IT1043587B (fr)
NL (1) NL7413977A (fr)
SE (1) SE7511837L (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340565A1 (fr) * 1976-02-04 1977-09-02 Kom Funkwerk Erfurt Procede et installation pour la fabrication de composants semi-conducteurs

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4469719A (en) * 1981-12-21 1984-09-04 Applied Magnetics-Magnetic Head Divison Corporation Method for controlling the edge gradient of a layer of deposition material
US4691434A (en) * 1982-02-19 1987-09-08 Lasarray Holding Ag Method of making electrically conductive regions in monolithic semiconductor devices as applied to a semiconductor device
GB2131624B (en) * 1982-12-09 1986-07-09 Standard Telephones Cables Ltd Thick film circuits
PH23907A (en) * 1983-09-28 1989-12-18 Rohm & Haas Catalytic process and systems
US6667215B2 (en) * 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
KR100950133B1 (ko) * 2002-12-27 2010-03-30 엘지디스플레이 주식회사 인쇄방식에 의한 패턴형성방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL294779A (fr) * 1962-07-20
US3700510A (en) * 1970-03-09 1972-10-24 Hughes Aircraft Co Masking techniques for use in fabricating microelectronic components
GB1447866A (en) * 1972-11-10 1976-09-02 Nat Res Dev Charge coupled devices and methods of fabricating them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340565A1 (fr) * 1976-02-04 1977-09-02 Kom Funkwerk Erfurt Procede et installation pour la fabrication de composants semi-conducteurs

Also Published As

Publication number Publication date
AU503144B2 (en) 1979-08-23
GB1524870A (en) 1978-09-13
ES442026A1 (es) 1977-06-16
AU8594575A (en) 1977-04-28
IT1043587B (it) 1980-02-29
NL7413977A (nl) 1976-04-27
DE2547447A1 (de) 1976-04-29
CH595699A5 (fr) 1978-02-28
US4301191A (en) 1981-11-17
CA1043471A (fr) 1978-11-28
SE7511837L (sv) 1976-04-26
JPS5165876A (fr) 1976-06-07
FR2290032B1 (fr) 1980-12-12

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Legal Events

Date Code Title Description
DR Decision of the appeal court due to an appeal at law against decisions of the director of the inpi, except decision of lapse
ST Notification of lapse