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ES2073717T3 - Disolucion de ataque quimico de ph casi neutro para molibdeno o wolframio y metodo para usarla. - Google Patents

Disolucion de ataque quimico de ph casi neutro para molibdeno o wolframio y metodo para usarla.

Info

Publication number
ES2073717T3
ES2073717T3 ES91480057T ES91480057T ES2073717T3 ES 2073717 T3 ES2073717 T3 ES 2073717T3 ES 91480057 T ES91480057 T ES 91480057T ES 91480057 T ES91480057 T ES 91480057T ES 2073717 T3 ES2073717 T3 ES 2073717T3
Authority
ES
Spain
Prior art keywords
solution
molybdenum
wolframio
compound
chemical attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91480057T
Other languages
English (en)
Inventor
Lawrence Daniel David
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of ES2073717T3 publication Critical patent/ES2073717T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)

Abstract

UNA DISOLUCION CORROSIVA DE PH NEUTRO O CASI NEUTRO PARA CORROER EFECTIVAMENTE MOLIBDENO Y TUNSTENO, INCLUYENDO: UNA SOLUCION DE IONES ACUOSOS FERRICIANIDO, UN MOLIBDATO SOLUBLE O TUNSTATO, Y UN COMPUESTO ESENCIAL TAL COMO SOBRE LA COMBINACION DE DICHO MOLIBDATO SOLUBLE O TUNSTATO Y TAL COMPUESTO ESENCIAL, SE FORMA UN COMPUESTO HETERCOPOL EN EL CUAL DICHO COMPUESTO ESENCIAL CONTRIBUYE AL MENOS CON UN HETEROATOMO A DICHO COMPUESTO HETEOROPOLO. LA SOLUCION CORROSIVA ES PREFERIBLEMENTE UTILIZADA PARA CORROER MOLIBDENO O TUNSTENO QUE ES AÑADIDO O APROXIMADO A UN MATERIAL BASE SENSITIVO.
ES91480057T 1990-04-30 1991-03-29 Disolucion de ataque quimico de ph casi neutro para molibdeno o wolframio y metodo para usarla. Expired - Lifetime ES2073717T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/516,845 US4995942A (en) 1990-04-30 1990-04-30 Effective near neutral pH etching solution for molybdenum or tungsten

Publications (1)

Publication Number Publication Date
ES2073717T3 true ES2073717T3 (es) 1995-08-16

Family

ID=24057324

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91480057T Expired - Lifetime ES2073717T3 (es) 1990-04-30 1991-03-29 Disolucion de ataque quimico de ph casi neutro para molibdeno o wolframio y metodo para usarla.

Country Status (8)

Country Link
US (1) US4995942A (es)
EP (1) EP0455574B1 (es)
JP (1) JP2628940B2 (es)
BR (1) BR9101651A (es)
CA (1) CA2039029C (es)
DE (1) DE69110348T2 (es)
DK (1) DK0455574T3 (es)
ES (1) ES2073717T3 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02228629A (ja) * 1989-02-28 1990-09-11 Sharp Corp 液晶表示装置
EP0622942A3 (en) * 1993-04-27 1998-01-14 Tamura Electric Works, Ltd. Card management for public telephone system
US5518131A (en) * 1994-07-07 1996-05-21 International Business Machines Corporation Etching molydbenum with ferric sulfate and ferric ammonium sulfate
DE19535307C2 (de) * 1995-09-22 1997-10-23 Siemens Ag Ätzlösung zur Erzeugung sehr feiner Strukturen in Molybdän-Oberflächen und Verfahren unter deren Einsatz
FR2795745B1 (fr) * 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
KR100364831B1 (ko) * 2000-03-20 2002-12-16 엘지.필립스 엘시디 주식회사 몰리브덴 금속막용 에칭 용액
US7158348B2 (en) * 2002-05-01 2007-01-02 Hitachi Global Storage Technologies Netherlands B.V. Integrated lead suspension for use in a disk drive using a tri-metal laminate and method for fabrication
KR20070092219A (ko) * 2004-12-06 2007-09-12 코닌클리케 필립스 일렉트로닉스 엔.브이. 에칭 용액 및 이를 위한 첨가제
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) * 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
KR20160021299A (ko) 2011-05-10 2016-02-24 에이치. 씨. 스타아크 아이앤씨 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films
CN111346490B (zh) * 2020-03-18 2022-02-08 山东大学深圳研究院 基于多酸的绿色脱硫体系及脱硫-电化学再生协同的循环脱硫副产氢气方法、系统及应用
CN112284866A (zh) * 2020-10-20 2021-01-29 中国兵器工业第五二研究所烟台分所有限责任公司 一种钼粉烧结材料晶粒度的腐蚀检测方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3098043A (en) * 1961-08-17 1963-07-16 Burroughs Corp Etchant for molybdenum
US3772104A (en) * 1972-03-30 1973-11-13 Bell Telephone Labor Inc Fabrication of thin film devices
JPS5180631A (ja) * 1975-01-10 1976-07-14 Tokyo Shibaura Electric Co Etsuchinguzai
JPS5415176A (en) * 1977-07-06 1979-02-03 Fujitsu Ltd Method of etching tungsten thin film layer
JPS5450441A (en) * 1977-09-30 1979-04-20 Fujitsu Ltd Etching method for molybdenum thin film
US4747907A (en) * 1986-10-29 1988-05-31 International Business Machines Corporation Metal etching process with etch rate enhancement

Also Published As

Publication number Publication date
CA2039029C (en) 1994-07-19
DK0455574T3 (da) 1995-10-16
US4995942A (en) 1991-02-26
DE69110348T2 (de) 1996-01-25
CA2039029A1 (en) 1991-10-31
JPH05311469A (ja) 1993-11-22
BR9101651A (pt) 1991-12-10
EP0455574A1 (en) 1991-11-06
DE69110348D1 (de) 1995-07-20
JP2628940B2 (ja) 1997-07-09
EP0455574B1 (en) 1995-06-14

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