EP4111831A1

EP4111831A1 - High-frequency wave applicator, associated coupler and device for producing a plasma

Info

Publication number: EP4111831A1
Application number: EP21706976.4A
Authority: EP
Inventors: Ana Lacoste; Alexandre Bes
Original assignee: Centre National de la Recherche Scientifique CNRS; Institut Polytechnique de Grenoble; Universite Grenoble Alpes
Current assignee: Centre National de la Recherche Scientifique CNRS; Institut Polytechnique de Grenoble; Universite Grenoble Alpes
Priority date: 2020-02-27
Filing date: 2021-02-25
Publication date: 2023-01-04
Also published as: FR3107801A1; FR3107801B1; WO2021170734A1; US20230137818A1

Abstract

Disclosed is a high-frequency wave applicator (1) for producing a plasma, comprising an inner conductor (11), and an outer conductor (12) forming a coaxial structure (10), and a propagation medium (13) for propagating a high-frequency wave in a main propagation direction (x), comprising a dielectric (130) for the wave (4) to pass through having a solid sealing body arranged between the inner conductor (11) and the outer conductor (12). Advantageously, the inner conductor (11) has a first outer dimension d1 in a transverse direction (y), perpendicular to the main propagation direction (x), and the outer conductor (12) has an inner dimension d2 in the transverse direction (y), such that 0.2<(d2-d1)/d2<0.55, helping improve the dissipation of energy flows on the surface of the applicator (1).

Description

High frequency wave applicator, coupler and associated device for the production of plasma

TECHNICAL AREA

The present invention relates to the field of the production of plasma excited by a high frequency wave. Its particularly advantageous application is the production of high-power plasma (power giving rise to power densities greater than ten W / cm ² ) and in the high pressure range (pressure greater than 1 Torr, corresponding to approximately 133 Pa in the international system of units).

STATE OF THE ART

Many deposition techniques are assisted by plasma. For example, the deposition of a polycrystalline silicon or diamond film on a substrate can advantageously be carried out by such techniques. It is recalled that a plasma is a conductive gaseous medium consisting of electrons, ions and neutral particles, and macroscopically electrically neutral. A plasma is notably obtained by ionization of a gas by electrons. We are interested here in plasmas excited by high frequency electromagnetic waves, and more particularly in the field of microwaves. Certain applications require a deposit on large surfaces, and therefore the generation of uniform plasma over a large production area. For this, several technological solutions exist.

One of these solutions consists in spatially distributing high-frequency waves, and in particular microwaves, using a waveguide in which the waves are propagated and injected, via injection slots, into an enclosure where the deposit is realised. However, the waveguides remain bulky and unwanted couplings between the waves injected through different injection slots can limit the stability of the plasma.

Another solution consists in distributing couplers independently supplied with high frequency waves. Generally speaking, a coupler for the production of a plasma is configured to transfer an electromagnetic wave from a rear end, connected to a wave generator, to a front end, where the coupling of the wave with electrons allows to generate a plasma.

In order to transfer the waves and couple them with the electrons in order to generate a plasma, the coupler comprises a front terminal part, hereinafter referred to as the applicator. The applicator includes a coaxial structure generally open at its front end where an electromagnetic field emerges and radiates into the vacuum chamber of a plasma production device.

As illustrated by FIG. 1, a coupler has a rear end connected to a wave generator 5, and comprises a wave applicator, generally made up of two electrical conductors: an inner conductor 11 and an outer conductor 12 together forming a structure coaxial 10, the inner conductor 11 and the outer conductor 12 being separated from each other by a dielectric medium 13 for propagation of the waves. The applicator can be disposed at a wall 300 of the enclosure 30 of the device or inserted at least in part into the enclosure.

The propagation medium 13 consists of at least one dielectric transparent to waves. The propagation medium 13 can comprise different dielectric materials arranged in sections. The propagation medium contains at least one dielectric 130 for passing the waves which has a solid body configured to obtain a vacuum seal between at least part of the propagation medium 13, for example at atmospheric pressure, and the enclosure 30 under vacuum of the plasma generator. The passage dielectric 130 can for example be positioned at the front end of the applicator, or else, as shown in Figure 1, set back from this end.

Furthermore, it is known from document WO03103003 A1 a coupler aimed at producing a plasma sheet on the surface of the enclosure wall of a plasma generating device. The coupler comprises an inner conductor substantially flush with the wall of the enclosure, the inner conductor and the wall of the enclosure being separated by a space coaxial with the inner conductor, forming the propagation medium. The coaxial space is filled at the end of the coupler with a wave-passing dielectric having a solid body.

However, high frequency wave applicators can be subjected to large energy flows at their front end in contact with the plasma, especially when the coupler is operating at high power and high pressure. These energy flows result in large amounts of heat, inducing thermomechanical stresses. These stresses can give rise to stress and deformation of the elements constituting the applicator, or even lead to their fracture. Thus, the distribution of waves by couplers remains limited to intermediate pressure ranges, generally not exceeding 0.5 Torr. This limits their use for deposits requiring, in addition to high power, high pressures, such as diamond deposit.

An object of the present invention is therefore to provide a high-frequency wave applicator allowing good power transfer, or even good coupling between an electromagnetic wave and electrons for the production of a plasma, by improving the dissipation of the fluxes of energy. 'energy.

The other objects, features and advantages of the present invention will become apparent on examination of the following description and the accompanying drawings. It is understood that other advantages can be incorporated.

ABSTRACT

To achieve this objective, according to a first aspect there is provided a high frequency wave applicator for a coupler for the production of a plasma, comprising: an inner conductor and an outer conductor together forming a coaxial structure extending in a main direction propagation of the wave inside the coaxial structure, a medium for propagating the high frequency wave delimited by an outer surface of the inner conductor and an inner surface of the outer conductor, and comprising a dielectric called the passage of l high frequency wave, the passage dielectric comprising a solid sealing body disposed between the inner conductor and the outer conductor, the inner conductor has, in a transverse direction perpendicular to the main direction of propagation, a first external dimension di taken between two points of its external surface opposite relative to an axis of the coaxial structure, and the external conductor has, in the transverse direction, an internal dimension d ₂ taken between two points of its internal surface opposite relatively to Tax of the coaxial structure.

Advantageously, the first external dimension di and the internal dimension d ₂ are such that:

0.2 0.55

This aspect ratio of the inner conductor and the outer conductor allows a good surface distribution of the power, while maintaining a good coupling to the plasma and a low level of insertion losses. Thus, the applicator makes it possible to generate a high-power, high-pressure plasma, while improving the dissipation of energy flows at the surface of the applicator, and in particular at the surface of a front end of the inner conductor. The reliability of the applicator is thus increased, which makes it possible to improve the stability and reproducibility of the processes in which the applicator is used. The applicator can thus be used for the production of plasma at high power and in the field of high pressures.

Furthermore, the surface distribution of the power makes it possible to extend the power deposition zone, and therefore that of plasma production.

The applicator is particularly suitable for plasma-assisted deposition processes, such as PECVD (Plasma Enhanced Chemical Vapor Deposition, for plasma-assisted chemical vapor deposition) processes, and more particularly large-scale diamond deposition. area. These methods generally require high concentrations of species in the generated plasma, and preferably over large areas, to accelerate the rate and / or rate of deposition. The applicator as introduced above makes it possible to meet this need.

According to one example, the inner conductor and the outer conductor can together form a cylindrical coaxial structure extending in a main direction of propagation. The inner conductor may have, in a transverse direction perpendicular to the main direction of propagation, an outer radius ri and the outer conductor may have, in the transverse direction, an inner radius r ₂ . The outer radius and ri the inner radius r ₂ may be such that, with r equal to d ^ 2 and r ₂ equal to d _2/2:

0.2 0.55 A second aspect relates to a high frequency wave coupler for producing a plasma comprising a coaxial structure formed of an inner conductor, and an outer conductor, configured to be connected to a high frequency wave generator, a high frequency wave applicator according to the first aspect, the coaxial structure of the applicator being arranged in continuity with the coaxial structure of the coupler.

According to one example, the high frequency wave applicator is configured to be removably attached to the coaxial structure of the coupler. The applicator can thus be mounted on different coaxial coupler structures. These low cost coaxial structures can be designed to ensure good coupling with the wave discharge from the generator, for different plasma impedances, for a single applicator. The use of high frequency wave coupler is therefore made more flexible. In addition, if only one of the applicator and the coaxial structure is damaged, it is not necessary to change the entire coupler. According to one example, the applicator can be configured to be fixed manually by a user on the coaxial structure of the coupler.

A third aspect of the invention relates to a device for producing a plasma comprising an enclosure and at least one high-frequency wave coupler according to the second aspect.

By virtue of the characteristics of the coupler, and in particular of the applicator, the plasma production device has several advantages over existing solutions. The reliability of the device is further increased by improving the dissipation of energy flows on the at least one coupler, while providing good coupling, or even improved coupling.

As the applicator can be mounted on different coaxial coupler structures at a lower cost, the associated investment costs are reduced, while allowing different operating conditions to be used. The device is therefore suitable for various methods, and in particular for plasma assisted deposition methods at high speed and / or high deposition rate.

According to one example, the device may comprise a plurality of couplers, the couplers being arranged on at least two, or even three, walls of the enclosure so as to form an at least two-dimensional, or even three-dimensional, network. The applicator making it possible to extend the power deposition zone, and therefore that of plasma production, a a plurality of couplers can be used to obtain uniform plasmas over large dimensions. A uniform plasma of high species density can be obtained, which makes it possible to considerably increase the speed of the processes using the device. In addition, the number of parts to be processed can be increased by increasing the number of couplers and, therefore, the volume of plasma generated. Thus, the production costs are reduced.

BRIEF DESCRIPTION OF THE FIGURES

The aims, objects, as well as the characteristics and advantages of the invention will become more apparent from the detailed description of an embodiment thereof which is illustrated by the following accompanying drawings in which:

Figure 1 shows a view in longitudinal section of a coupler illustrating the state of the art.

Figure 2 shows a view of the enclosure of a plasma production device, according to one embodiment of the invention.

Figure 3 shows a view in longitudinal section of a coupler, according to one embodiment of the invention.

Figure 4 shows a view in longitudinal section of an applicator, according to a first embodiment of the invention.

Figure 5 shows a view in longitudinal section of an applicator, according to a second embodiment of the invention.

Figure 6 shows a view in longitudinal section of an applicator, according to a third embodiment of the invention.

Figure 7 shows a view in longitudinal section of an applicator, according to a fourth embodiment of the invention.

FIG. 8 is a graph representing the surface distribution of the power (in W.cm ² ) on the front end of the applicator for several values of the radii of the inner conductor, according to one embodiment of the invention.

FIG. 9 is a graph of the insertion losses, in relative values, represented as a function of the relative dimensions of the applicator according to different embodiments of the invention.

FIG. 10 is a graph of the relative variation of the no-load impedance, that is to say without generation of plasma, on the front end of the applicator, normalized to its characteristic impedance, and represented as a function of the relative dimensions of the applicator according to various embodiments of the invention.

Figure 10A is a graph of the variation of the Z _N / Z _N ^mm ratio shown in depending on the relative dimensions of the applicator according to various embodiments of the invention.

The drawings are given by way of example and are not limiting of the invention. They constitute schematic representations of principle intended to facilitate understanding of the invention and are not necessarily on the scale of practical applications. In particular, the relative dimensions of the various elements of the applicator are not necessarily representative of reality.

DETAILED DESCRIPTION

Before starting a detailed review of embodiments of the invention, optional characteristics which can optionally be used in combination or alternatively are listed below: the high-frequency wave has a frequency greater than around one hundred MHz. According to one example, the wave is a microwave wave, and in particular the wave has a frequency between 300 MHz and 10 GHz. According to one example, the frequency can be 352 MHz, 433 MHz, 915 MHz, 2.45 GHz, 5.8 GHz, the microwave pass dielectric can be in a thin window configuration. More particularly, the passage dielectric can be arranged at a front end of the propagation medium, and extend, according to the main direction of propagation, over a length substantially equal to a multiple of a tenth of a quarter of length d wave of the wave and strictly less than a quarter of the wavelength of the wave. The passage dielectric is thus in a so-called thin window configuration. According to one example, the wavelength of the wave is its wavelength in the passing dielectric, the coaxial structure may exhibit symmetry of revolution about its axis, the inner conductor may exhibit, on a portion s' extending from a front end of the inner conductor, a constriction so as to present in the transverse direction, from the portion and to its rear end, a second outer dimension d, between two points of its outer surface opposite relatively to the axis of the coaxial structure, the first external dimension di being greater than the second external dimension d, the applicator can comprise a so-called covering dielectric having a solid body and covering at least one front end of the inner conductor, the passage dielectric can be arranged at a front end of the middle of propagation, and the cover dielectric can further cover a front end of the outer conductor and the pass dielectric, pass dielectric and cover dielectric can form an assembly having a common body without discontinuity, the assembly formed by the dielectric passage and the covering dielectric may have, according to the main direction of propagation and at the level of the propagation medium, a length substantially equal to a multiple of a tenth of a quarter wavelength of the wave and strictly less than a quarter of the wavelength of the wave. According to one example, the wavelength of the wave is its wavelength in the passage dielectric, the applicator may further comprise a cooling module arranged in the inner conductor, the cooling module comprising a chamber of cooling bounded by a front end of the inner conductor. The inner conductor may have, at the level of the cooling chamber, a reduced thickness, the thickness e ₁₁₂ of the inner conductor at the level of the cooling chamber may be less than or equal to where kn and k ₁₄ represent respectively the thermal conductivities of the inner conductor and of the covering dielectric and in the thickness of the inner conductor. the applicator may comprise a covering dielectric having a solid body and covering at least a front end of the inner conductor, and a junction ceramic disposed in contact between at least the covering dielectric and the inner conductor, and preferably in contact between the inner conductor and the covering dielectric and in contact between the inner conductor and the passing dielectric, the passing dielectric, the junction ceramic and the inner conductor may be formed of materials whose ratio to each other of their expansion coefficients thermal is between 0.5 and 1.5. the applicator may further comprise a solder rod arranged between the passage dielectric and the outer conductor, the passage dielectric, the solder rod and the outer conductor may be formed of materials whose ratio between them of their coefficients of thermal expansion is between 0.5 and 1.5. In the remainder of the description, use will be made of terms such as “longitudinal”, “transverse”, “front” and “rear”. These terms should be interpreted relatively in relation to the normal position of use of the high frequency wave applicator or coupler in the plasma production device. For example, the term “front” end means the end of the applicator or of the coupler facing the enclosure of the plasma production device. The “rear” end designates the end of the applicator or coupler facing away from, that is to say towards the outside of the plasma production device. “Longitudinal” is understood to be relative to the main direction of extension of the applicator or of the coupler, parallel to the main direction of wave propagation.

"Internal" refers to the inward facing parts or faces of the applicator or coupler, and "external" means to the outward facing parts or faces of the applicator or coupler. According to one example, the coaxial structure of the applicator and of the coupler having a central axis A, “internal” designates the elements or the faces turned towards this axis, and “external” designates the elements or the faces turned away from this central axis.

By a parameter “substantially equal / greater / less than” a given value is meant that this parameter is equal / greater / less than the given value, to within plus or minus 10%, or even to within plus or minus 5%, of this value.

By a material of an element of the applicator or coupler based on a compound A, an element comprising this compound A and optionally other materials, or even the material is predominantly formed of this compound A.

The thickness of an element or of a wall is measured, for at least one portion considered, at each point of the surface of the element or of the wall for at least one portion considered, in a direction perpendicular to the tangent at this point.

The device 3 for producing plasma is described with reference to FIG. 2. The device comprises an enclosure 30 having several walls 300. At least one high-frequency wave coupler 2 is arranged on a wall 300 of the enclosure 30. The coupler 2 aims to ensure the propagation of an electromagnetic wave from a microwave generator to the interior of the enclosure 30 with a minimum of power loss. The coupler 2 also makes it possible to couple an electromagnetic wave 4, preferably of high frequency transmitted by the coupler to the electrons. This coupling makes it possible to ionize a gas or a mixture of gases present in the enclosure 30 in order to generate a plasma. The frequency of the wave can be greater than 100 MHz. More particularly the frequency of the wave can be in the microwave range, and for example included between 300 MHz and 10 GHz. In the following, reference is made to the non-limiting example in which the wave is a microwave wave.

For this, the device 3 can comprise gas introduction modules configured to supply the gas or the gas mixture in the enclosure 30, as well as pumping modules, not shown in FIG. 3 and known to those skilled in the art. job. The gas introduction modules and the pumping modules make it possible to maintain the pressure of the gas to be ionized at a desired value, chosen in particular according to the nature of the gas, and the desired density of species in the plasma generated.

Typically, the pressure of the gas or gas mixture can be between a few millitorr to a few tens of torr (corresponding to about a few tenths of Pa to a few thousand Pa, in the international system of units). More particularly, the plasma production device 3 is configured to operate in the high pressure range, that is to say at a pressure greater than 1 Torr, corresponding to 133 Pa. In addition, the device 3 can be configured to operate. at high microwave power giving rise to high power densities, for example at a power density greater than 10 W / cm ² .

In fact, the plasma production device 3 comprises a coupler 2, configured to withstand the application of high powers and high pressures. Thus, the device 3 is suitable for the production of plasmas of very high species densities, for example in high-speed and / or high-speed plasma treatment processes. By way of non-limiting example, plasma-assisted chemical vapor deposition processes (abbreviated as PECVD, stand for Plasma Enhanced Chemical Vapor Deposition) such as diamond deposition, polycrystalline silicon deposition, anti-corrosive film deposition, resin removal.

The coupler 2 can be placed at a wall 300 of the enclosure 30 so as to be flush with this wall 300 according to the example illustrated in FIG. 2, or inserted at least partly in the enclosure 30. Preferably, the coupler 2 is arranged so as to be flush with the wall of the chamber, to increase the uniformity of the plasma.

The device 3 can comprise a plurality of couplers 2, in order to form an array extending over at least one wall 300 of the enclosure 30. By increasing the number of couplers, the volume of the plasma generated can be extended. Thus, the surface treated with the plasma and / or the number of parts to be treated can be increased, leading to a reduction in production costs and allowing the implementation of large surface treatment methods. According to one example, a plurality of couplers 2 is arranged on at least two walls 300, in order to form a two-dimensional network. According to the example illustrated in FIG. 2, a plurality of couplers 2 is arranged on three walls 300, in order to form a three-dimensional network. Thus, the surface treated with the plasma and / or the number of parts to be treated can be further increased. In addition, it is possible to process an object having a complex surface, for example the surface of the object extends in the three dimensions of space.

The microwave coupler 2 is now written with reference to FIG. 3. The coupler 2 comprises a rear part and a front end part, hereinafter designated by the term microwave applicator 1. The rear part of the coupler 2 and the applicator 1 comprise an inner conductor 11, 21, also designated in the field by the term "central core", and an outer conductor 12, 22, also designated in the field by the term "shielding. ". The inner conductor 11, 21, and the outer conductor 12, 22 are electrically conductive structures. The inner conductor 11, 21 extends in a main direction x between a front end 112, 212 intended to be directed towards the inside of the enclosure 30 of the device 3, and a rear end 113, 213. The outer conductor 12 , 22 extends in a main direction x between a front end 122, 222 intended to be directed towards the inside of the enclosure 30 of the device 3, and a rear end 123, 223. For the rear part of the coupler 2 and the applicator 1, the outer conductor 12, 22 surrounds the inner conductor 11, 21, at least partially in a main direction x, and form a coaxial structure 10, 20 having a central axis A parallel to the main direction x. According to one example, each coaxial structure 10, 20 has a symmetry of revolution about the central axis A called the axis of revolution. For example, the inner conductor 11, 21 and the outer conductor 12, 22 are cylindrical. In the following, the rear part of the coupler 2 is denoted in an equivalent manner by the coaxial structure 20.

In order to transmit the microwaves from the rear end of the coupler 2 to the front end of the applicator 1 where the plasma is produced, a propagation medium 13, 23 is delimited by the outer surface 111, 211 of the inner conductor 11, 21 and the internal surface 120, 220 of the external conductor 12, 22. The propagation medium 13, 23 is a dielectric medium, and therefore transparent to microwaves. This medium extends in a main direction of microwave propagation, parallel or even coincident with the x direction. The propagation medium 13, 23 can be formed from one of several dielectric materials, such as air, quartz, and alumina. As illustrated in Figure 3, the coaxial structure 13 of the applicator 1 and the coaxial structure 20 of the coupler 2 can be arranged in continuity with one another.

Coupler 2 can be connected to a microwave generator 5 and be configured to inject the microwaves into the propagation medium 13, 23. For this, the inner conductor 21 has at its rear end 213 a bottom 2130 located at a distance d ₇ from the microwave injection connector 50 according to the x direction, and delimiting the propagation medium 23 at the rear ends 213, 223 of the inner 21 and outer conductors 22. This distance d ₇ is generally chosen in quarter wave l / 4, with l the wavelength of microwave. Note that this distance d ₇ may be different depending on the design of the coupler 2, and in particular of its coaxial structure 20.

The microwave applicator 1 can be arranged at the level of a wall 300 of the enclosure 30 according to the example illustrated in FIG. 2. For this, the applicator 1 can comprise an abutment module 124, for example. with a fixed stop 124 disposed on the periphery of the outer conductor 12. It is understood that depending on the arrangement of the abutment module 124, the applicator 1 can be flush with the wall 300 of the enclosure 30, or else be inserted into the less in part in the enclosure 30.

According to one example, the applicator 1 and the rear part of the coupler 2 can form one and the same part. As an alternative, the microwave applicator 1 can be configured to be removably attached to the coaxial structure 20 of the coupler 2. The microwave applicator 1 can thus be mounted on any coaxial structure 20 of the coupler 2 configured in such a way. that the coupler transmits the microwaves from one end of the coupler to another 2. It is known to those skilled in the art that the coaxial structures 20, of lower cost, can be designed to ensure good coupling with the discharge of microwave from generator 5. For example, different coaxial structures 20 can be used for different plasma impedances, that is to say different windows in pressure and in power of use, for the same applicator 1. The use of microwave coupler 2 is therefore made more flexible. The investment cost associated with the device 3 is further reduced, since it is possible to use the applicator 1 for different operating conditions and, therefore, different treatment methods. Further, if only one of the applicator 1 and the coaxial structure 20 of coupler 2 is damaged, it is not necessary to change the entire coupler 2.

The applicator 1 can be fixed on the coaxial structure 20 of the coupler 2 by means of tools, or preferably manually by a user. For this, the applicator 1 can include a fixing module 123 'complementary to a fixing module 222' of the coaxial structure 20 of the coupler 2, and configured to secure the applicator 1 to the coaxial structure 20. For example, these fixing modules have complementary threads. According to another example, these fixing modules have complementary reliefs suitable for being clipped. According to the example illustrated in figure 2, the module fixing 123 'can be disposed at the rear end 123 of the outer conductor 12 of the applicator 1, and the fixing module 222' can be disposed at the front end 222 of the outer conductor 22. Further, the inner conductor 11 of the applicator may have at its rear end 113 a profile complementary to the front end 212 of the inner conductor 21 of the coaxial structure 20. In order to achieve a vacuum seal between the inner conductor 11, 21, a seal, and for example an O-ring 115, can be arranged at their interface. In addition, the contact surface between the inner conductors 11, 21 extends in the direction 11 to improve the heat transfer along the inner conductors 11, 21, as well as to ensure good mechanical guidance when the applicator 1 is mounted. on the coaxial structure 20.

Furthermore, the outer conductor 22 of the coaxial structure 20, or even the outer conductor 12 of the applicator, has a nominal diameter compatible with standards, such as standards DN40 (40 mm), DN25 (25 mm), DN16 (16 mm).

The microwave applicator is now described in detail with reference to FIGS. 4 to 7. When a coupler 2 operates at high power and at high pressure, the applicator 1 in contact with the plasma is exposed to large flows of energy, which results in exposure to significant amounts of heat. The applicator 1 is here configured to withstand these large flows of energy, by efficient distribution of heat and its dissipation. Thus, the thermomechanical stresses giving rise to stresses and deformations or even a mechanical fracture of the elements of the applicator 1 are reduced or even avoided.

The applicator 1 more particularly has a configuration of the inner 11 and outer 12 conductors, as well as an assembly of different materials allowing its operation without damage, in particular when the energy flow to which the coupler 2 is exposed becomes significant.

For this, in a transverse direction y, perpendicular to the main direction of propagation x, the inner conductor 11 has a first outer dimension d ^ between two points of its outer surface 111 opposite relative to the axis of the coaxial structure 10, and the outer conductor 12 has an internal dimension d ₂ between two points of its internal surface 120 opposite relative to the axis of the coaxial structure 10, the first external dimension d ^ and the internal dimension d ₂ being relatively chosen so as to allow a good surface distribution of the power, while maintaining good plasma coupling and a low level of insertion losses.

The increase or the difference in the dimension d ^ of the inner conductor 11 with respect to the dimension d ₂ of the outer conductor 12 makes it possible to improve the surface distribution of the power considerably. However, this increase or difference can induce, on the one hand, a quasi-exponential increase in the insertion losses (a _c ), which decreases the power transmitted to the plasma and, on the other hand, an increase in the impedance. in the output plane of the vacuum radiating applicator Z _v normalized to the characteristic impedance Z ₀ , designated Z _N below, with Z _N = Z _v / Z ₀ , which degrades the coupling.

In this case, the dimension di of the inner conductor 11 with respect to the dimension d ₂ of the outer conductor 12 can be limited as a function of the insertion losses (a _c ) in the conductors 11, 12 of the applicator and as a function of the normalized impedance Z _N. For example, at _{constant dimension d 2} , according to a standardized diameter of the outer conductor, and at a fixed frequency, the dimension di is chosen so that:

- Ad _c / d _cmin is less than 180%, where Da ₀ corresponds to the difference between a _c and ci _cmin , Q _cmin corresponding to the coefficient of insertion losses in the inner 11 and outer 12 conductors;

- Z _N / Z _Nmin is less than _{1.65, where Z Nmin} is equal to (Z _v / Z ₀ ) _min , Z _Nmin corresponding to an impedance in the output plane of the vacuum radiating applicator close to the characteristic impedance Z ₀ , Z _Nmin tending towards 1.

On the basis of the above conditions, the reduction in the dimension di of the inner conductor 11 relative to the dimension d ₂ of the outer conductor 12 makes it possible to minimize both the insertion losses and the normalized impedance. However, this decrease reduces the power distribution area. In this case, the maximum reduction in the dimension di of the inner conductor 11 can be limited by the minimum values of the insertion losses (a _c ) and of the standardized impedance Z _N. Beyond these minimum values, not only is the power disadvantageously distributed over a very small area, but also the insertion losses and the normalized impedance Z _N drastically increase again.

During the development of the invention, a ratio of the dimensions di and d ₂ of the respectively inner 11 and outer 12 conductors has been demonstrated in order to obtain the extension of the power distribution zone, while keeping the maintenance at a low level of the insertion losses and of the ratio of the standardized impedances Z _N / Z _N , ™, that is to say of the impedances in the output plane of the radiating vacuum applicator quite close to the characteristic impedance of the applicator (Z _v / Z ₀ <10).

The first external dimension di and the internal dimension d ₂ are such that

0.2 0.55

According to the example in which the inner 11 and outer 12 conductors are cylindrical, with d = 2r, we obtain the following relation.

0.2 0.55

Preferably, the reduction in the dimension di of the inner conductor 11 is limited by Aa _c / a _cmin > 15% and Z _N / Z _{Nmin> 1.01 in order} to have a sufficiently large power distribution surface. Thus, the dimension ratio presented in the two aforementioned relationships can be between 0.2 and 0.55. The dimension ratio presented in the two aforementioned relationships can be more limited and between 0.2 and 0.4.

Thus, the pfd is distributed over the surface of the inner conductor 11 while minimizing the insertion losses and the normalized impedance, and more particularly by keeping the insertion losses low between 15 and 180 ^* a _cmin and impedances of _1.01 to 1.65 * Z Nmin, i.e. relative deviations from 0.01 to 0.65 * Z _Nmin .

In the following, it is considered without limitation that the inner 11 and outer 12 conductors are cylindrical, and therefore form a cylindrical coaxial structure 10.

By way of example, FIG. 8 illustrates the surface distribution of the microwave power (in W.cm ² ) on the front end of the applicator 1 for several values of the radii of the inner conductor 11, for a discharge of argon at a pressure of substantially 1 Torr by a coupler of nominal diameter 25 mm when supplied by 30 W of microwave power at 915 MHz. Note that the more the radius ri of the inner conductor increases from 3.1 to 9.5 mm, the more the microwave power is distributed along the inner conductor 11 in a direction transverse to the axis of revolution A.

Figure 9 illustrates a graph of the insertion losses, in relative values, calculated as a function of the ratio (r ₂ -ri) / r ₂ for a coaxial aluminum waveguide of different nominal diameters (abbreviated DN) given in mm , with an air propagation medium 13 at a microwave frequency of 915 MHz or 2.45 GHz. According to the example illustrated in figure 9, a minimum loss of a _cmin = 3.10 ³ m ¹ can be obtained for a radius ri of 3 to 4 mm ( _i.e. _{a relative loss of Aa c} / a cmin = (a _c - a _cmin ) / a _cmin ~ 0), but the power deposited in the plasma, as illustrated in FIG. 8, remains localized on an area with a radius of the order of the radius ri of the inner conductor, which is much less than the radius r ₂ of the outer conductor 12, of 12.5 mm according to this example. For a radius ri between 7 mm and 9.5 mm, the relative insertion losses AO _c / O _cmin are less than 180% while allowing better surface expansion of the power, according to figure 8.

FIG. 10A is proposed as a light version of FIG. 10 so as to make it easier to read by those skilled in the art. In this sense, figure 10A proposes a direct representation of the Z _N / Z _N ^mm ratio instead of the representation of the values relative (Z _N / Z _N ^mm -1) x100 in% as given in FIG. 10. In addition, FIG. 10A illustrates the range of values of the relative dimensions of the applicator as introduced above.

For the three values considered by way of example in figure 8 for a DN25 applicator with radius r ₂ of 12.5 mm, figure 10 shows that the best coupling, having Z _N / Z _{Nmin “} 1.03> 1 , 01, corresponds to the radius ri of 3.1 mm, but the ratio (d ₂ - di) / d ₂ = 0.75 does not satisfy the criterion (d ₂ - di) / d ₂ <0.55. In addition, according to FIG. 8, the power is concentrated on a narrow distribution zone, with a radius comparable to the radius ri which leads to very high power densities (2 kW / cm ² for a power of 600 W supplied to the 'applicator). The limit value (d ₂ - di) / d ₂ = 0.55 is reached for a radius ri of 5.6 mm. For the same radius r ₂ , the coupling corresponding to the best surface distribution of the power (0.2 kW / cm ² for a power of 600 W) is obtained for the radius of 9.5 mm with the ratios (d ₂ - di) / d ₂ = 0.24 and Z _N / Z _Nmin ~ 1.48 included in the domain of validity. The limit value (d ₂ - di) / d ₂ = 0.2 is reached for a radius n of 10 mm. According to this exemplary embodiment of an applicator DN25 with radius r ₂ of 12.5 mm, the latter can therefore have a radius ri of maximum 10 mm and minimum 5.6 mm to meet the desired criteria from the point of view of insertion losses and plasma coupling.

The insertion losses being kept at a low level and the coupling between the microwaves 4 and the electrons being ensured, the applicator 1 allows the production of a high-power plasma with an advantageous distribution of the power and therefore of dissipation of energy flows at the surface of the applicator. The thermomechanical strength of the applicator 1 is thus improved. Its reliability is therefore increased, which makes it possible to improve the stability and reproducibility of the processes in which the applicator 1 is used. The applicator 1 can thus be used for the production of plasma at high power and in the field of high pressures, for the production of plasma with a high density of species.

This configuration of the applicator 1 makes it possible to extend the microwave power deposition zone and, therefore, that of plasma generation. This results in the reduction of the discontinuity between the generation zones when a plurality of couplers 2 are arranged in a device 3 for producing plasma. Uniform plasmas over large dimensions can thus be obtained.

Synergistically, a uniform plasma with a high density of species can be generated, especially when couplers are arranged in an at least two-dimensional array. This considerably increases the speed of a production process. Treatment Using Applicator 1. Uniform, high pressure treatment processes can be implemented over large areas, which solves one of the main challenges of high pressure plasmas of existing solutions. In addition, maintenance costs are reduced thanks to the increased reliability of the applicator 1.

The propagation medium 13 of the applicator 1 is now described in detail. The propagation medium 13 consists of at least one dielectric transparent to microwaves, for example air. The propagation medium 13 further comprises a passage dielectric 130 of the microwave 4 having a solid body called sealing, based on a dielectric material, and disposed between the inner conductor 11 and the outer conductor 12. The The term "solid" specifies a solid state relative to a gaseous or liquid state. The passage dielectric 130 is configured so as to allow the passage of the microwave 4 from the propagation medium 13 to the enclosure 30. The passage dielectric is further configured so as to maintain a vacuum seal between the enclosure 30 and the rest of the propagation medium 13, which is for example at atmospheric pressure.

According to the example illustrated in FIG. 4, the passage dielectric can be positioned at the level of the front ends 112, 122 of the inner 11 and outer 12 conductors, so as to form a dielectric plug at the front end 131 of the propagation medium 13. .

The microwave pass dielectric 130 can be in a thin window configuration. For this, the passage dielectric 130 has a length L, in the main direction of propagation x, substantially equal to a multiple of a tenth of a quarter wavelength of the microwave 4 in the passage dielectric 130. This configuration has several advantages over existing solutions in which the length of the passage dielectric is a multiple of a half and / or a quarter of the microwave wavelength. The length of the passage dielectric 130 may be less than that of existing solutions, which facilitates the dissipation of energy flows in the dielectric, and therefore its cooling. In addition, a thin window limits the impedance mismatch between the constructed applicator 1 and that predicted by digital simulations. This mismatch is notably induced by possible differences between the dielectric permittivity of the passage dielectric 130, indicated by the suppliers, used as input data during the digital design of the couplers 2, and the actual dielectric permittivity. Thus, the applicator 1 makes it possible to limit, or even avoid, a loss of microwave power.

To guarantee the seal by the passage dielectric 130 between the dielectric 130 and the outer conductor 12, a ring 17 is arranged at their interface. A ring 17 corresponds to a metallic connection between the dielectric 130 and the outer conductor 12. The ring is preferably a solder ring 17, allowing a connection without fusion of the dielectric 130 and the outer conductor 12, unlike a ring of solder. welding. The solder ring 17 makes it possible to replace an O-ring 18 generally used for this function, as illustrated in FIG. 1. However, when using a coupler 2, an O-ring placed at the end of the applicator 1 in contact with plasma, can overheat and be damaged or destroyed. This can lead to electromagnetic leaks or even coupling instabilities. In addition, the solder rod 17 gives mechanical strength to the applicator. Preferably, and as described in more detail later, the solder rod is made of metal.

Synergistically, the thin window configuration facilitates the soldering operation. During this operation, it is easier to control the diffusion of the solder rod over a shorter distance and thus to ensure the seal.

The applicator further comprises a cover dielectric 14, a part made from a dielectric material configured to cover at least the front end 112 of the inner conductor 11. According to one example, the cover dielectric 14 further covers the front end 122 of the outer conductor 12 and the passing dielectric 130 on its front face. The covering dielectric 14 can thus cover the entire surface of the applicator 1 in contact with the plasma. The covering of the surface of the applicator 1 makes it possible to form a barrier to chemical reactions which could be activated by the high temperature of this surface and, therefore, to protect the applicator against contamination of the process. The reliability of the applicator is thus further increased.

The covering dielectric 14 and the passage dielectric 130 can also be juxtaposed in the x direction without discontinuity. For example, provision can be made for the covering 14 and microwave passage dielectrics 130 to be juxtaposed without forming a common body, these dielectrics being for example assembled using a junction ceramic.

Preferably, the covering dielectric 14 can form a common body with the passage dielectric 130. The covering dielectric 14 and the passage dielectric 130 can be directly juxtaposed in the x direction without discontinuity and be formed of the same material. Thus, the constraints of mechanical adjustment between the passage dielectric 130 and the covering dielectric 14 are thus avoided. The problems of misalignment of the dielectrics during assembly are also eliminated. Through elsewhere, the formation of microcavities between the passage dielectric 130 and the cover dielectric 14 is thus avoided. The formation of micro-plasmas in these microcavities can cause local overheating and deterioration of the applicator 1. The dissipation of the energy flows at the surface of the applicator is therefore further improved.

The assembly formed by the passage dielectric 130 and the cover dielectric 14 can be in a thin window configuration. For this, the assembly formed by the passage dielectric 130 and the covering dielectric 14 may have a length L, in the main direction of propagation x and at the level of the propagation medium 13, substantially equal to a multiple of a tenth. of a quarter wavelength of the microwave 4 in the passage dielectric 130 and strictly less than a quarter of the wavelength of the wave.

The covering dielectric 14 may be of small thickness, and in particular of the smallest possible thickness. The minimum thickness of the covering dielectric 14 is more particularly imposed by its mechanical strength. For example, the thickness of the cover dielectric 14 is substantially greater than 100 µm (10 ⁴ m).

To improve the heat dissipation at the surface of the applicator 1 in contact with the plasma, the applicator comprises a cooling module 15 allowing efficient transfer of the quantity of heat deposited by the plasma on the applicator 1. This cooling module 15 is configured to circulate a cooling liquid 153, for example water, to dissipate the heat received by the applicator 1 from the plasma by transferring it to the cooling liquid 153.

As illustrated by FIG. 4, the cooling module 15 can be arranged inside the inner conductor 11. The cooling module 15 can comprise a cooling chamber 150, configured to cooperate with an injection element 151 of the liquid of cooling 153 disposed on the coaxial structure 20 of the coupler 2, and an evacuation duct 152 of this liquid.

The cooling chamber 150 may be delimited by the front end 112 of the inner conductor 11, by its inner surface 110. The injection element 151, such as a bevelled needle, may open into the cooling chamber 150, by looking at the front of the applicator 1.

The evacuation duct 152 can extend from the cooling chamber 150 in the x direction in the internal conductor 21 of the coaxial structure until it crosses the bottom 2130, so as to evacuate the cooling fluid 153 after the transfer. of heat carried out. The discharge duct 152 can more particularly be delimited by the internal surface 210 of the internal conductor 21. According to the example illustrated in FIG. 4, the inner radius r ₅ of the inner conductor 11 may be greater than the inner radius r ₃ of the inner conductor 21. Thus, the cooling chamber 150 makes it possible to circulate the cooling liquid in contact with d 'a maximum of the front end 112 and the inner surface 110 of the outer conductor.

The applicator 1 can be configured so as to be free from an air pocket between the cooling chamber 150 and the covering dielectric 14. For this, the applicator 1 can include a junction ceramic 16, a part based on a ceramic material disposed in contact between at least the covering dielectric 14 and the inner conductor 11, and preferably also in contact between the inner conductor 11 and the passage dielectric 130, and configured to establish a junction between these elements. The junction ceramic 16 can be configured so as to establish direct contact, without film or air pockets, between the inner conductor 11 and the covering dielectrics 14 and that of passage 130. Indeed, the presence of layers or pockets air is detrimental from the point of view of heat dissipation due to the very low thermal conductivity of the air, approximately 0.5 to 0.6 WK ¹ .m ¹ over a range of 800 to 1000 K , compared to those of surrounding materials, described in detail later, and for example alumina (30 WK ¹ .m ¹ ), Kovar (17 WK ¹ .m ¹ ), or even aluminum (238 WK ¹ . m ¹ ). Synergistically with the cooling module 15, the heat transfer and therefore the dissipation of the energy flows are further improved.

According to one example, the inner conductor 11 may have, on a portion 114, a constriction 114 '. More particularly, and as illustrated by Figures 5 to 7, the inner conductor 11 may have, from its end of first radius n, a constriction 114 'to present from the portion 114 and up to its rear end 113, a second radius r, the first radius ri being greater than the second radius r. Thus, in a direction going from the rear towards the front of the applicator 1, the inner conductor 11 has a portion aligned with the inner conductor 21 of the coaxial structure 20, then has an enlarged portion 112 'on its front end. 112. According to a projection perpendicular to the x direction, the periphery of the portion aligned with the inner conductor 21 of the coaxial structure 20 can be completely included in the periphery of the widened portion 112 '. According to the example illustrated by FIGS. 5 to 7, and in a direction going from the front to the rear of the applicator 1, the constriction 114 ′ extends from a rear end of the passage dielectric 130. The wall of the inner conductor 11 at the level of the constriction 114 'may further extend obliquely by in relation to the x direction.

The outer radius r of the inner conductor 11 and the outer radius r ₄ of the inner conductor 21 can thus be reduced, while retaining the configuration of the end 112 of the inner conductor 11 allowing a compromise between the distribution of heat flows and minimization of losses. insertions. The ratio of the rays r / r ₂ , and r ₄ / r ₂ can thus be reduced, in order to improve the transfer of the microwaves, by minimizing the phenomena of reflection and / or the appearance of standing waves. Consequently, the applicator makes it possible to further limit, or even avoid, a loss of microwave power.

The tightening 114 ′ also makes it possible to increase the internal surface 110 of the internal conductor 11 in contact with the cooling fluid 153 at the level of the cooling chamber 150. The heat transfer and therefore the dissipation of the energy flows are further improved. .

With or without the constriction 114 ', the thickness e ₁₁₂ of at least a portion of the front end 112 of the inner conductor 11, at the cooling chamber 150, can be minimized. The thickness of the inner conductor 11 being reduced, the cooling of the front end of the applicator 1 is facilitated. At the level of the connection between the inner conductors 11, 21, the thickness en of the inner conductor 11 may be between ₂ and 2 ^* in ₂ .

The thickness at ₂ of the inner conductor 11 and / or the thickness of the covering dielectric 14 can more particularly be linked to the thermal resistance of each of the two materials forming these elements. This thermal resistance is preferably low so as not to induce significant temperature gradients in the materials, which would lead to damaging stresses and deformations, such as cracks in the passage dielectric 130 and / or in the covering dielectric 14.

The thickness at ₂ of the inner conductor 11 at the level of the cooling chamber 150 may be less than or equal to: where kn and k ₁₄ represent respectively the thermal conductivities of the inner conductor 11 and of the covering dielectric 14 and in the thickness of the inner conductor.

According to one example, the thickness of the conductor 21, defined by the difference between its external radius r ₄ and its internal radius r _3, is greater than the thickness of the internal conductor 11 to improve the mechanical strength of the coupler 2.

The relative position of the inner 11 and outer 12 conductors is now described with reference to Figures 4 to 7. More particularly, the conductors can be in the same plane or offset from each other. As illustrated by Figures 4 and 5, the inner 11 and outer 12 conductors can be aligned so that their front end 112, 122 are arranged in the same plane P ^. In addition, the microwave passage dielectric 130 can be aligned on its front face in the same plane.

As an alternative, the front end 112 of the inner conductor 11 may be arranged set back from the front end 122 of the outer conductor 12. According to the example illustrated in FIG. 6, the front end 112 of the inner conductor 11 may more particularly be arranged at a distance d ₅ from the front end 122 of the outer conductor 12, d ₅ preferably being able to be limited so that the thickness of the assembly formed by the covering dielectric 14 and the microwave passage dielectric 130, at the front end of the microwave passage medium 13, or in the thin window configuration.

As an alternative, the front end 112 of the inner conductor 11 may be arranged in front of the front end 122 of the outer conductor 12. According to the example illustrated in FIG. 7, the front end 112 of the inner conductor 11 may more particularly be arranged at a distance d ₆ from the front end 122 of the outer conductor 12, d ₆ preferably being able to be limited so that the thickness of the assembly formed by the covering dielectric 14 and the microwave passage dielectric 130 , at the front end of the microwave passage medium 13, or in the thin window configuration.

Note that although the examples shown in Figures 6 and 7 show a constriction 114 ′, the different relative positions of the conductors 11, 12 may apply with or without the constriction 114 ’. In addition, depending on the relative position of the conductors 11, 12, the dimensions of the assembly formed by the passage dielectric 130 and the covering dielectric 14 can be adapted, in particular to comply with the thin window configuration.

As stated above, the various constituent elements of the applicator 1 are formed from materials allowing its operation without damage, in particular when the energy flow to which the coupler 2 is exposed becomes significant. The materials chosen are preferably compatible from a thermal and chemical point of view in order to be able to: carry out the solder between the outer conductor 12 and the passing dielectric

130, or even the covering dielectric 14, form the junction between the dielectrics 130, 14 and the inner conductor 11, prevent the creation of thermal bridges and the appearance of thermomechanical stresses giving rise to stresses and deformations, even up to mechanical fracture, of the elements constituting the applicator 1, or even the coupler 2, guarantee the mechanical strength of the assembly .

Materials which meet these criteria are now described. At the interfaces between different elements of the applicator 1, the materials of the elements at a given interface may have thermal expansion coefficients of these materials which are similar, for example including the ratio between them, or in an equivalent manner the ratio two to two, is between 0.5 and 1, 5, and preferably between 0.8 and 1, 2. Thus, the risk of deformation of these elements relative to each other is limited when using the applicator 1. This characteristic relates more particularly to the assembly formed by the covering dielectric 14, the passage dielectric 130, the junction ceramic 15 and the inner conductor 11, and / or the assembly formed by the passage dielectric 130, the solder ring 17 and the outer conductor 12.

The covering dielectric 14 preferably exhibits good chemical stability at high temperature, and preferably at a temperature above 300 ° C. For example, the covering dielectric 14 is made of Al ₂ 0 ₃ alumina. The covering dielectric 14 is thus stable with respect to the metallic materials generally used to cover the front end of the couplers, such as aluminum or stainless steel. In addition, metals have a lower melting temperature T _f (T _f.Ai = 660 ° C against T _f.Ai 203 = 2054 ° C at atmospheric pressure), and can induce contamination of the plasma, and therefore of the process. , with metallic fumes.

The outer conductor 12 may comprise at least two portions formed of different materials, in order to improve the chemical and physical compatibility with other neighboring elements of the applicator, in particular with regard to possible thermal deformations during the operation of the applicator. 'applicator 1.

In order to achieve the solder between the outer conductor 12 and the passage dielectric 130, or even the covering dielectric 14, the materials of these elements are preferably thermally compatible with one another and chemically with the material of the solder rod 17, comprising for example an alloy of copper and silver. The front end 122 of the inner conductor is therefore preferably based on an alloy of iron, nickel and cobalt with a low coefficient of thermal expansion, such as Kovar ©, and the passage dielectric 130, or even the covering dielectric 14 , alumina. An alloy of iron, nickel and cobalt with a low coefficient of thermal expansion, such as Kovar ©, can in particular be used to seal the pairs of materials together. glass / metal or ceramic / metal in a wide temperature range and for multiple applications. It can therefore be used to perform a solder with a dielectric, for example made of alumina Al ₂ 0 ₃ . In addition, Kovar © and alumina have similar thermal expansion coefficients (CET): CET _Kovar ~ 5-6x10 ⁶ K ¹ and CET _Ai203 ~ 8-9x10 ⁶ K ¹ .

The outer conductor 22 and the inner conductor 21 of the coaxial structure 20 of the coupler 2 may be based on a metal having high thermal conductivity, such as silver, copper, aluminum, duralumin, a brass. conductivity, respectively having a thermal conductivity of 400, 380, 238, 160 and 120 WK ¹ .m ¹ . Indeed, the conductors of the coaxial structure 20 are cooled very efficiently by the bottom 2130 of the coupler 2, illustrated in FIG. 3, which can increase the speed of dissipation of the energy flows. It should be noted that the choice of metal can also be made so as to minimize the insertion losses of the microwaves. Preferably, the outer conductor 22 and the inner conductor 21 are based on aluminum.

The assembly formed by the outer conductors 12, 22 is preferably vacuum tight. For this, the outer conductor 12 may include a front portion 125 in Kovar © and a rear portion 126 in metal, the front portion 125 and the rear portion 126 being able for example to be welded together. In order to allow this welding, the metal of the rear portion 126 preferably has a melting temperature T _f close to the front portion 125. For example, the rear portion 126 is made of stainless steel (abbreviated as stainless steel): T _f.Kovar = 1450 ° C and T _f _i _n0x ~ 1500 ° C. As stated above, the portion 126 can be assembled to the outer conductor of the coaxial structure 20 by the fixing module 123 ', for example by a thread.

The inner conductor 11 of the applicator is preferably made of an iron, nickel and cobalt alloy with a low coefficient of thermal expansion, such as Kovar ©. Indeed, the aluminum is not thermally compatible with the alumina of the covering dielectric 14 and of the passage dielectric 130, for example in terms of thermal expansion coefficients (CET _Ai 203 ~ 8-9x10 ⁶ K ¹ "CET _{A |} = 23-25x10 ⁶ K ¹ ).

The junction ceramic preferably has good temperature resistance and high thermal conductivity. A ceramic adhesive, or equivalent ceramic bonding cement, based on alumina can be used, such as 903HP having a melting temperature T _f-903HP equal to 1790 ° C, and a thermal conductivity of about 5, 6 WK ¹ .m ¹ . 903HP also has good chemical compatibility with Al ₂ 0 ₃ alumina and Kovar ©, as well as a similar thermal expansion coefficient (CET _Kovar ^“ 5-6x10 ⁶ K ¹ , CET ₉₀₃ HP = 7.2x10 ⁶ K ¹ , CET _A , ₂₀₃ ^" 8-9x10 ⁶ K ¹ ).

In view of the above description, it clearly appears that the invention proposes a high-frequency wave applicator allowing good transfer, or even good coupling, between an electromagnetic wave and electrons for the production of a plasma, by improving the dissipation of the energy flows.

The invention is not limited to the embodiments described above and extends to all the embodiments covered by the claims.

In the above description, it was considered that the inner and outer conductors are cylindrical. The conductors can however have any geometry making it possible to form a coaxial structure and allowing the transfer and coupling of a high frequency wave.

LIST OF REFERENCES

I. Microwave applicator

10. Coaxial structure

I I. Internal conductor

110. Internal surface

III. Outer surface

112. Front end

112 ’. Extended portion

113. Rear end

114. Portion

114 ’. Tightening

115. O-ring

12. External conductor

120. Internal surface

121. External surface

122. Front end

123. Rear end

123 ’. Fixing module

124. Stop element

125. Front portion

126. Rear portion

13. Propagation medium

130. Passage dielectric

131. Front end

14. Cover dielectric

140. Front face

141. Rear view

15. Cooling module

150. Cooling chamber

151. Injection needle

152. Exhaust duct

153. Cooling fluid

16. Joint ceramic

17. Solder rod 18. O-ring

2. Microwave coupler

20. Coaxial structure

21. Internal conductor 210. Internal surface

211. External surface

212. Front end

213. Rear end

2130. Bottom 22. External conductor

220. Internal surface

221. External surface

222. Front end

222 ’. Fixing module 223. Rear end

23. Propagation medium

3. Production device

30. Pregnant

300. Walls 4. Wave

5. Microwave generator

50. Microwave injection connector

Claims

A high-frequency wave applicator (1) for a coupler for producing a plasma, comprising: an inner conductor (11) and an outer conductor (12) together forming a coaxial structure (10) extending in one direction. main (x) propagation of the high frequency wave (4) inside the coaxial structure (10), a propagation medium (13) of the high frequency wave (4) delimited by an outer surface (111 ) of the inner conductor (11) and an inner surface (120) of the outer conductor (12), and comprising a so-called passage dielectric (130) of the high frequency wave (4), the passage dielectric (130) comprising a solid sealing body disposed between the inner conductor (11) and the outer conductor (12), the inner conductor (11) has, in a transverse direction (y) perpendicular to the main direction of propagation (x), a first dimension external d1 taken between two points of its external surface (111) which are relatively opposite ent to an axis of the coaxial structure (10), and the outer conductor (12) has, in the transverse direction (y), an internal dimension d2 taken between two points of its internal surface (120) opposite relative to the axis of the coaxial structure (10), the applicator being characterized in that, the first external dimension di and the internal dimension d ₂ are such that:

0.2 0.55

2. Applicator (1) according to the preceding claim, wherein the passage dielectric (130) is disposed at a front end (131) of the propagation medium (13), and extends, in the main direction of propagation (x ), over a length (L) substantially equal to a multiple of a tenth of a quarter wavelength of the wave (4) and strictly less than a quarter of the wavelength of the wave ( 4).

3. Applicator (1) according to any one of the preceding claims, wherein the inner conductor (11) has, on a portion (114) extending from a front end (112) of the inner conductor (11), a constriction. (114 ') so as to present, in the transverse direction (y) and from the portion (114) and up to its rear end (113), a second external dimension d between two points of its external surface (111) opposite relative to the axis of the coaxial structure (10), the first external dimension di being greater than the second external dimension d.

4. Applicator (1) according to any one of the preceding claims, comprising a so-called covering dielectric (14) having a solid body and covering at least one front end (112) of the inner conductor (11).

5. Applicator (1) according to the preceding claim, wherein, the passage dielectric (130) being disposed at a front end (131) of the propagation medium (13), the covering dielectric (14) further covers one end. front (122) of the outer conductor (12) and the passing dielectric (130).

6. Applicator (1) according to the preceding claim, wherein the passage dielectric (130) and the cover dielectric (14) form an assembly having a common body without discontinuity.

7. Applicator (1) according to the preceding claim, wherein the assembly formed by the passage dielectric (130) and the covering dielectric (14) has, according to the main direction of propagation (x) and at the level of the middle of propagation (13), a length (L) substantially equal to a multiple of a tenth of a quarter wavelength of the wave (4) in the passage dielectric (130) and strictly less than a quarter of the wavelength of the wave (4) in the passing dielectric (130).

8. Applicator (1) according to any one of the preceding claims, further comprising a cooling module (15) disposed in the inner conductor (11), the cooling module (15) comprising a delimited cooling chamber (150). by a front end (112) of the inner conductor (11), the inner conductor (11) having, at the level of the cooling chamber (150), a reduced thickness.

9. Applicator (1) according to the preceding claim, wherein the thickness e ₁₁₂ of the inner conductor (11) at the cooling chamber (150) is less than or equal to where kn and k ₁₄ represent respectively the thermal conductivities of the inner conductor (11) and of the covering dielectric (14) and in the thickness of the inner conductor.

10. Applicator (1) according to any one of the preceding claims, the applicator (1) comprising a covering dielectric (14) having a solid body and covering at least one front end (112) of the inner conductor (11), and a junction ceramic (16) disposed in contact between at least the cover dielectric (14) and the inner conductor (11).

11. Applicator (1) according to the preceding claim, wherein the covering dielectric (14), the passage dielectric (130), the junction ceramic (15) and the inner conductor (11) are formed of materials whose ratio between them their coefficients of thermal expansion is between 0.5 and 1.5.

12. Applicator (1) according to any one of the preceding claims, further comprising a solder rod (17) disposed between the passage dielectric (130) and the outer conductor (12).

13. Applicator (1) according to the preceding claim, wherein the passage dielectric (130), the solder rod (17) and the outer conductor (12) are formed of materials whose ratio between them of their expansion coefficients thermal is between 0.5 and 1.5.

14. High frequency wave coupler (2) for producing a plasma comprising a coaxial structure (20) formed of an inner conductor (21), and an outer conductor (22), configured to be connected to. a high frequency wave generator (5), a high frequency wave applicator (1) according to any one of claims 1 to 13, the coaxial structure (10) of the applicator (1) being arranged in continuity of the coaxial structure (20) of the coupler (2).

15. Coupler (2) according to the preceding claim, wherein the high frequency wave applicator (1) is configured to be removably attached to the coaxial structure (20) of the coupler (2).

16. Device (3) for producing a plasma comprising an enclosure (30) and at least one coupler (2) according to any one of the preceding two claims.

17. Device (3) for producing a plasma according to the preceding claim, the device (3) comprising a plurality of couplers (2), the couplers (2) being arranged on at least two walls (300) of the enclosure. (30) so as to form an at least two-dimensional network.