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EP3822709A1 - Method for manufacturing a timepiece component - Google Patents

Method for manufacturing a timepiece component Download PDF

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Publication number
EP3822709A1
EP3822709A1 EP19208589.2A EP19208589A EP3822709A1 EP 3822709 A1 EP3822709 A1 EP 3822709A1 EP 19208589 A EP19208589 A EP 19208589A EP 3822709 A1 EP3822709 A1 EP 3822709A1
Authority
EP
European Patent Office
Prior art keywords
support
cavity
metal layer
level
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19208589.2A
Other languages
German (de)
French (fr)
Other versions
EP3822709B1 (en
Inventor
Sylvain Jeanneret
Rémy FOURNIER
James Hide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Patek Philippe SA Geneve
Original Assignee
Patek Philippe SA Geneve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Patek Philippe SA Geneve filed Critical Patek Philippe SA Geneve
Priority to EP19208589.2A priority Critical patent/EP3822709B1/en
Publication of EP3822709A1 publication Critical patent/EP3822709A1/en
Application granted granted Critical
Publication of EP3822709B1 publication Critical patent/EP3822709B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B5/00—Automatic winding up
    • G04B5/02—Automatic winding up by self-winding caused by the movement of the watch
    • G04B5/16—Construction of the weights
    • G04B5/165—Weights consisting of several parts
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/003—3D structures, e.g. superposed patterned layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/005—Jewels; Clockworks; Coins
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/063—Balance construction
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams

Definitions

  • the present invention relates to a method of manufacturing a timepiece component, and more particularly a method of manufacturing a timepiece component by a micro-manufacturing technique.
  • Some watch components such as balance springs and wheels, are today made from silicon. Silicon is appreciated for its lightness, its elasticity, its non-magnetic character and for its ability to be machined by micro-fabrication techniques, in particular by the deep reactive ionic etching technique DRIE.
  • DRIE deep reactive ionic etching
  • Silicon nevertheless has drawbacks: it is fragile, in other words, it has no plastic domain, which makes it difficult for example to fix a silicon wheel on an axle.
  • its great lightness does not make it possible to produce components completely in silicon, and in small dimensions, such as a balance or an oscillating weight, which must have sufficient inertia or unbalance.
  • Materials other than silicon which can also be machined by micro-manufacturing techniques, and whose use for manufacturing watch components can be envisaged, have the same drawbacks. These materials include diamond, quartz, glass and silicon carbide.
  • a component watchmaker comprising a structure produced by a micro-manufacturing technique and at least one element formed in or at the periphery of the structure in a material different from that of the structure, said method comprising the production of a structure comprising a cavity which passes through said structure entirely, assembling this structure on a support having a conductive layer by means of a layer of photosensitive resin deposited on the surface of the support and serving as a temporary adhesive, and exposing the assembly in order to eliminate the photosensitive resin appearing at the bottom of the cavity so as to reveal the conductive layer from which the filling of the cavity by galvanic deposition of a metal is carried out.
  • the silicon structure, with its metallic element is then separated from its support.
  • This very advantageous process makes it possible to form the metallic element in or at the periphery of the structure, using the structure as a mold for the galvanic growth, and not to bring it back.
  • the entire watch component can therefore be manufactured by micro-manufacturing techniques, that is to say techniques allowing precision of the order of a micron.
  • the formed metal element therefore does not adversely affect the manufacturing precision of the component.
  • the present invention aims to remedy these drawbacks by proposing a new method making it possible to avoid any galvanic growth defect.
  • the step of producing the support comprises, before the assembly step, the formation, on the face of the support intended to be assembled to the structure, of at least one controlled zone arranged for, during assembly, come opposite at least the cavity of the structure and to allow the conductive metal layer to appear so as to form, with said cavity, a mold intended to form said element.
  • controlled zones with precisely delimited contours on the support, before its assembly with the structure, allows the conductive metal layer to appear subsequently, after assembly, on a precisely defined and homogeneous zone in order to better control the galvanic growth. and to avoid any parasitic galvanic growth.
  • the cavity intended to receive the element is arranged, during the step of producing the structure, to have an open end opening out from the second level to the outside, and the step of assembling the support and the structure comprises a step of positioning the structure so that said structure is assembled to the support by its second level, the open end of the cavity being positioned facing the controlled area of the support.
  • Such positioning of the structure on the support makes it possible to limit the contact surface between the support and the structure, which makes it possible to reduce the areas of the structure where parasitic galvanic growth could occur.
  • the present invention relates to a method of manufacturing a watch component comprising a main structure and at least one element formed in or at the periphery of said structure in a material different from that of the structure.
  • the method of the invention comprises the following steps:
  • the first stage as represented by the figure 1a , consists in producing a structure 1 comprising at least one through cavity 2 intended to receive said element 3 (cf. Figure 1g ).
  • the structure 1 is preferably configured beforehand so as to produce the watch component of the desired final shape.
  • Structure 1 is made of a material chosen from the group comprising silicon, oxidized silicon, diamond, quartz, glass or silicon carbide.
  • the structure 1 is made of silicon or oxidized silicon, that is to say it is made from a silicon substrate 4, such as a silicon wafer, covered with a layer of 'silicon oxide 5.
  • the structure 1 is preferably produced by micro-manufacturing or micro-forming techniques.
  • the step of producing the structure 1 is carried out by the technique of deep reactive ion etching DRIE (Deep Reactive Ion Etching).
  • DRIE Deep Reactive Ion Etching
  • the structure 1 is represented as having only one and the same level, that is to say that it is of constant height. In this case, only one DRIE step is necessary.
  • the production of such a structure is well known to those skilled in the art so that a more detailed description of its manufacturing process is not necessary here.
  • the structure 1 may comprise one or more through cavities 2 intended to receive an element 3.
  • This through cavity 2 has side walls 2a which may be defined in part at least by the structure 1 or entirely defined by the structure 1, as shown in the figure 1 for example.
  • the second step of the method of the invention consists in producing a support 6 comprising at least one conductive metal layer 8, as shown in Figure figure 1b .
  • the support 6 is made for example of silicon, oxidized silicon or pyrex.
  • the support 6 is made from a silicon substrate 10, such as a silicon wafer, covered with a layer of silicon oxide 12, as shown in FIG. figure 2a .
  • the support 6 is then prepared by depositing, on the functional face 6a of the oxidized silicon substrate 10, 12 intended to be assembled to the structure 1, a first layer of photosensitive resin 14 as shown in FIG. figure 2b .
  • a photosensitive resin layer 14 is used as a passivation layer.
  • the conductive metal layer 8 is deposited above the first layer of photosensitive resin 14, on the side of the functional face 6a.
  • This conductive metal layer 8 is made of a metal used for the galvanic growth of the element 3 in the cavity 2.
  • This conductive metal layer 8 is for example a gold layer.
  • the conductive metal layer 8 can be positioned between other metal layers, forming a multilayer metal assembly. For example, it is possible to provide, between the first layer of photosensitive resin 14 and the conductive metal layer 8, a very thin metal bond layer (not shown), made for example of titanium. After the deposition of the conductive metal layer 8, it is possible to provide a step of depositing a sacrificial metal layer 16 on the conductive metal layer 8.
  • This sacrificial metal layer 16 is a very thin metal layer made for example of titanium or made of copper and titanium alloy, making it possible to protect the conductive metal layer 8 from any oxidation before the galvanic growth step.
  • the different layers metal can be deposited for example by PVD.
  • the sacrificial metal layer 16 can be deposited for example by a Flash process.
  • the step of producing the support 6 advantageously comprises a step of depositing a parylene layer 18 at least above the conductive metal layer 8, on the side of the functional face 6a of the support 6, and more specifically on the sacrificial layer 16 when present.
  • the parylene layer 18 is deposited, according to a method known to those skilled in the art, at low temperatures, for example all around the support 6.
  • the thickness of the parylene layer 18 is preferably between 0.5 ⁇ m and 8. ⁇ m.
  • parylene layer which has been deposited on the inoperative face 6b of the support 6, opposite to the functional face 6a which comprises the photosensitive resin layer 14 and the conductive metal layer 8 already deposited, can be removed by reactive ionic etching RIE (Reactive Ion Etching).
  • the parylene layer 18 makes it possible to ensure that the through cavities 20 of the structure 1 not intended to receive an element 3 remain isolated from the conductive metal layer 8 so as not to be subject to parasitic galvanic growth, in particular through faults that could have the first layer of photosensitive resin 14 at the level of these through cavities 20.
  • the step of producing the support 6 comprises the formation, on the functional face 6a of the support 6 intended to be assembled to the structure 1, of at least one controlled zone 22 arranged for, during the assembly of the structure 1 on the support 6, come opposite at least the cavity 2 of the structure 1 intended to receive the element 3 and to allow the conductive metal layer 8 to appear so as to form, with the side walls 2a of said cavity 2, a mold intended to form said element 3, the exposed conductive metal layer 8 constituting a conductive bottom of the mold.
  • the zone 22 is positioned on the support 6 so as to correspond to the positioning and is dimensioned so as to have dimensions at least equal to the dimensions, in cross section, of the end of the cavity 2 in the structure 1.
  • This step carried out before the step of assembling the structure 1 on the support 6, makes it possible to define with great precision the zone 22 of the support 6 facing the cavity 2, zone 22 only from which the filling of the cavity 2 by galvanic deposition of a metal to form the element 3 will be produced.
  • the step of producing the support 6 comprises a step of depositing a second layer of photosensitive resin 24 at least on the functional face 6a of the support 6 intended to be assembled to the structure 1, as well as a step of forming, at least in said second layer of photosensitive resin 24, an opening 26 corresponding to the controlled zone 22.
  • This opening 26, controlled in its positioning and in its dimensions, is advantageously formed by a photolithographic process using a mask arranged on the support 6, specifically prepared beforehand, and comprising a window corresponding to the location of the cavity 2 on the structure 1 and having dimensions at least equal to the dimensions, in cross section, of the open end of the cavity 2.
  • the opening 26 is not, however, too large so as not to form too large a protuberance of a metal element, as can be seen from ra below.
  • the parts of the photosensitive resin 24 exposed through the mask are removed, allowing the parylene 18 to appear in the opening 26, as shown in figure figure 2e .
  • the exposure of the second layer of photosensitive resin 24 before the assembly of the structure 1 on its support 6 allows better control of the illuminated area through the specific mask deposited on the support 6 and to form the controlled zone 22 delimited for the subsequent galvanic growth, avoiding any parasitic, uncontrolled exposure of the second layer of photosensitive resin 24 which would cause parasitic galvanic growth.
  • the configuration of the cavity 2 of the structure 1, used as a mask on the support in the known methods, is now without influence on the exposure of the second layer of photosensitive resin 24 which can be perfectly and more easily limited to the controlled area. 22.
  • the method of the invention continues with a step of temporary assembly of the structure 1 and of the support 6, prepared as described above, and as shown in Figure figure 1c .
  • the structure 1 is positioned above the support 6 so that the open end of the cavity 2 faces the corresponding controlled zone 22 provided on the support 6.
  • the assembly of the structure 1 and of the support 6 is preferably carried out by bonding by means of the second layer of non-exposed photosensitive resin 24, remaining on the surface of the support 6, and which serves as an adhesive.
  • controlled zone 22 is formed by temporarily assembling the structure 1 with its support 6 , the main thing being to leave a controlled zone 22 of the support 6 clear, giving access to a controlled zone of the support.
  • conductive metal layer 8 which will come opposite the corresponding cavity 2, a controlled starting point for subsequent galvanic growth.
  • the assembly step of the method of the invention then comprises a step of removing the parylene 18 in the controlled zone 22, and more specifically at the area corresponding to the opening 26 in the second layer of photosensitive resin 24, as shown in figure 1d .
  • the parylene 18 can be removed, for example, by reactive ion etching RIE (Reactive Ion Etching). This allows the conductive metal layer 8 or the sacrificial metal layer 16 to appear in the opening 26 when it is present (not shown in the figure. figure 1 ).
  • parylene only at the level of the opening 26 makes it possible to improve the control of the selectivity and to avoid parasitic growths of the zone 22 for the subsequent galvanic growth.
  • the assembly step of the method of the invention then comprises a step of eliminating the sacrificial metal 16 in the controlled zone 22, and more specifically at the level of the corresponding zone. at the opening 26.
  • the sacrificial metal can be removed for example by soaking in an acid bath. This makes it possible to reveal in the opening 26 the conductive metal layer 8 which will form the conductive bottom of the mold, the starting point of the galvanic growth for the formation of the element 3.
  • the next step of the method of the invention consists in forming the element 3 by depositing, in the cavity 2, the material constituting said element 3, different from that of the structure 1.
  • the deposition of the material in the cavity 2 is produced by galvanic growth from the area made accessible of the metallic conductive layer 8 at the level of the opening 26 defining the controlled area 22 of the support 6, using the mold formed by said exposed area of the metallic conductive layer 8 as well as by the side walls 2a of the cavity 2 of the structure 1.
  • said material forming element 3 is a metal.
  • the element 3 is made of a material of greater density than the material of the structure 1, such as silicon.
  • the metallic element 3 is preferably made of gold. It could nevertheless be made in another metal, in particular another metal with a high density, such as Ni, NiP, or any other electro-formable metal.
  • the metal element 3 is in the same plane as the structure 1 and has the same constant height as the latter.
  • the next step of the process of the invention consists in separating the structure 1 from its support 6, for example by dissolving the second layer of photosensitive resin 24.
  • the structure 1 is obtained with a metallic element 3 formed in the cavity 2, and terminated by a metallic protuberance 28 which is formed in the space cleared of the controlled zone 22, at the level of opening 26.
  • the last step of the method of the invention consists in leveling the element 3 with respect to the structure 1. This operation is carried out for example by lapping in order to eliminate the metallic protuberance 28 so as to give the element 3 the same height as structure 1.
  • the method of the invention makes it possible to limit the formation of the metal protuberances 28 only to the controlled areas 22, so that they can be identified and easily removed. Structure 1 does not exhibit other zones of parasitic galvanic growth.
  • the structure 1 can have several levels while being stepped on at least a first and a second level which are different from one another.
  • structure 1 is shown as having two different levels 1a, 1b. In this case, two stages of DRIE are practiced to achieve the different levels.
  • the second level 1b is defined such that the area occupied by a cross section of the structure 1 at the second level 1b is less than the area occupied by a cross section of the structure 1 at the first level 1a.
  • Element 3 is located at least at the second level 1b, and preferably extends over the two levels 1a and 1b.
  • the structure 1 preferably comprises a silicon substrate 4 covered with a layer of silicon oxide 5. It is however specified that during the step of producing the structure 1, the cavity 2 intended for at receiving the element 3 is arranged to have an open end 2b opening out from the second level 1b outwards.
  • the support 6 is made in the same way as described above, with reference to figure 2 especially. It comprises in particular the silicon substrate 10 covered with a layer of silicon oxide 12, and on its functional face 6a, the first layer of photosensitive resin 14, optionally a very thin metal bonding layer, the conductive metal layer 8 , optionally a sacrificial metal layer, the parylene layer 18 and the second layer of photosensitive resin 24. As described above, the support 6 comprises in said second layer of photosensitive resin 24, the opening 26 corresponding to the controlled zone 22 , facing the cavity 2 of the support 1, as shown in figure 3a .
  • the step of assembling the support 6 and the structure 1 comprises a step of positioning the structure 1 so that said structure 1 is assembled to the support 6 by its second level 1b, the open end 2b of the cavity 2 being positioned opposite the controlled zone 22 of the support 6, as shown in figure 3a .
  • the structure 1 is turned over so as to position the face of its second level facing the support 6, said second level representing a surface smaller than that of the first level, in order to '' have the smallest possible contact surface with said support 6.
  • the cavity 2 and the walls 30 of the structure 1 defining the cavity 2 are dimensioned to allow the structure 1, and more particularly at the second level 1b of the structure 1, to have a contact surface with the support 6 sufficient to ensure good adhesion between the support 6 and the structure 1 at the time of assembly. This makes it possible in particular to ensure the strength of the assembly during galvanic growth.
  • the cavity 2 being defined by the walls 30 of the structure 1 of thickness e (in cross section) may have a height h chosen such that the ratio e / h may for example be greater than 0.25, for example, preferably greater than 0.3, and preferably greater than 0.35, and on the other hand less than 0.85, preferably less than 0.75, or preferably less than 0.55, or even less than 0.4, depending on the intended use of the watch component and the position of the wall on the component.
  • the thickness of the wall of the structure which is located furthest to the periphery must be minimal so as not to disturb the mass / inertia ratio of the balance.
  • the w / h ratio can advantageously be between 0.3 and 0.4 at a wall located inside the balance, and between 0.25 and 0.35 at a wall located at the periphery.
  • the cavity 2 has, in cross section, a width L separating the two opposite walls 30 of the structure 1, chosen such that the ratio h / L is preferably between 0.1 and 0.9, and preferably less than 0.8 , preferably less than 0.7, and preferably less than 0.6, or even 0.5 or 0.4.
  • the steps of the method according to the second variant are identical to the steps described above in relation to the variant of the figure 1 . More particularly, the parylene 18 is eliminated at the level of the zone corresponding to the opening 26 in the second layer of photosensitive resin 24, giving access to the conductive metal layer 8, as shown in FIG. figure 3b . Then, in the case where a sacrificial metal layer, said sacrificial metal is eliminated at the level of the zone corresponding to the opening 26.
  • the element 3 is formed in the cavity 2 by galvanic growth from the free area of the conductive layer metal 8, the cavity 2 being filled through its end 2b on the side of the second level 1b.
  • the next step of the method of the invention consists in separating the structure 1 from its support 6.
  • the structure 1 is obtained with a metallic element 3 formed in the cavity 2, and terminated by a metallic protuberance 28 which has formed. in the open space of the controlled area 22, at the level of the opening 26.
  • the last step of the method of the invention consists in leveling the element 3 with respect to the structure 1.
  • the leveling is therefore done on the side of the second level 1b which occupies the smallest area in cross section, without risk damaging the first level 1a of structure 1.
  • the surface of the first level 1a of the structure which represents in cross section, the most important surface, is not in contact with the support 6 so that no parasitic galvanic growth, which would be difficult to remove over a large area, cannot occur.
  • the method of the invention is used to manufacture a horological component, such as a balance 31, shown in FIG. figure 4 , the element 3 being placed at the periphery of the structure 1 and serving to increase the inertia / mass ratio of the balance.
  • Said balance 31 comprises a board 32 constituting the first level 1a of the structure 1 and comprising a central orifice 34, as well as two closed boxes formed by the walls 30 of the structure 1 provided on the second level 1b and defining the cavities 2, by bean-shaped example, filled with metal elements 3.
  • the method of the invention can also be used to manufacture a watch component such as an oscillating weight for automatic winding, the metal element being placed at the periphery of the structure and serving to increase the unbalance / mass ratio of the oscillating weight. .
  • the oscillating mass comprises a structure formed of a thin and light central part corresponding to the first level of the structure and of a higher peripheral part corresponding to the second level.
  • the peripheral part of the structure comprises through cavities defined entirely by the structure and filled with metallic elements formed according to the method of the invention.
  • the cavity in which the metallic element is formed may be defined partially by the structure and partially by photosensitive resin.
  • the figure 5 shows for example an oscillating mass 36 obtained by such a variant of the method of the invention.
  • the oscillating mass 36 comprises a structure 38 formed of a thin central part 38a, light, corresponding to the first level of the structure 38 and of a higher peripheral part 38b corresponding to the second level of the structure 38.
  • the central part 38a comprises a hole 40 for mounting the oscillating weight 36.
  • the peripheral part 38b defines on the outside a peripheral surface 41 partially forming the cavity in which the metal element 42 is formed in the form of an extending arc of a circle over the entire length and the entire height of the peripheral wall 38b.
  • the step of forming the metallic element 42 consists in depositing the electro-formable material of the element 42 in a cavity defined on the one hand by the structure 38, and more specifically by its peripheral surface 41, and on the other hand by the photosensitive resin formed outside the structure 38, so that after the separation of the support 6 and the removal of said photosensitive resin, an element 42 appears, formed on said peripheral surface 41 of structure 38.
  • a circular metallic element could be formed according to this variant of the method of the invention on a peripheral surface of a silicon structure, continuously or discontinuously, to manufacture a balance, for example.

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Abstract

La présente invention concerne un procédé de fabrication d'un composant horloger comprenant une structure (1) et un élément (3) formé dans ou à la périphérie de la structure dans un matériau différent de celui de la structure. Ledit procédé comprend la réalisation d'une structure (1) comprenant une cavité (2) destinée à recevoir ledit élément (3), la réalisation d'un support (6) comprenant au moins une couche métallique conductrice (8), l'assemblage temporaire de la structure (1) et du support (6), la formation dudit élément (3) dans ladite cavité (2) par croissance galvanique à partir de la couche métallique conductrice (8) du support (6), et la séparation de la structure (1) de son support (6). L'étape de réalisation du support (6) comprend, avant l'étape d'assemblage, la formation, sur la face (6a) du support (6) destinée à être assemblée à la structure (1), d'une zone contrôlée (22) agencée pour, lors de l'assemblage, venir en regard de la cavité (2) de la structure (1) et pour permettre à la couche métallique conductrice (8) de pouvoir apparaitre de manière à former, avec ladite cavité (2), un moule destiné à former ledit élément (3). En outre, lorsque la structure (1) comprend plusieurs niveaux (1a, 1b), l'étape d'assemblage de la structure (1) sur son support (6) comprend une étape de positionnement de ladite structure (1) de sorte qu'elle est assemblée temporairement au support (6) par son niveau (1b) qui occupe, en section transversale, la plus petite surface.The present invention relates to a method of manufacturing a watch component comprising a structure (1) and an element (3) formed in or at the periphery of the structure in a material different from that of the structure. Said method comprises the production of a structure (1) comprising a cavity (2) intended to receive the said element (3), the production of a support (6) comprising at least one conductive metal layer (8), the assembly temporary structure (1) and support (6), the formation of said element (3) in said cavity (2) by galvanic growth from the conductive metal layer (8) of the support (6), and the separation of the structure (1) of its support (6). The step of producing the support (6) comprises, before the assembly step, the formation, on the face (6a) of the support (6) intended to be assembled to the structure (1), of a controlled area (22) arranged to, during assembly, come opposite the cavity (2) of the structure (1) and to allow the conductive metal layer (8) to appear so as to form, with said cavity ( 2), a mold intended to form said element (3). In addition, when the structure (1) comprises several levels (1a, 1b), the step of assembling the structure (1) on its support (6) comprises a step of positioning said structure (1) so that 'it is temporarily assembled to the support (6) by its level (1b) which occupies, in cross section, the smallest surface.

Description

La présente invention concerne un procédé de fabrication d'un composant horloger, et plus particulièrement un procédé de fabrication d'un composant horloger par une technique de micro-fabrication.The present invention relates to a method of manufacturing a timepiece component, and more particularly a method of manufacturing a timepiece component by a micro-manufacturing technique.

Certains composants horlogers, tels que des spiraux et des roues, sont aujourd'hui fabriqués en silicium. Le silicium est apprécié pour sa légèreté, son élasticité, son caractère amagnétique et pour son aptitude à être usiné par des techniques de micro-fabrication, en particulier par la technique de gravure ionique réactive profonde DRIE.Some watch components, such as balance springs and wheels, are today made from silicon. Silicon is appreciated for its lightness, its elasticity, its non-magnetic character and for its ability to be machined by micro-fabrication techniques, in particular by the deep reactive ionic etching technique DRIE.

Le silicium présente néanmoins des inconvénients : il est fragile, en d'autres termes, il ne présente pas de domaine plastique, ce qui rend difficile par exemple la fixation d'une roue en silicium sur un axe. De plus, sa grande légèreté ne permet pas de réaliser des composants complètement en silicium, et dans de petites dimensions, tels qu'un balancier ou une masse oscillante, qui doivent avoir une inertie ou un balourd suffisants.Silicon nevertheless has drawbacks: it is fragile, in other words, it has no plastic domain, which makes it difficult for example to fix a silicon wheel on an axle. In addition, its great lightness does not make it possible to produce components completely in silicon, and in small dimensions, such as a balance or an oscillating weight, which must have sufficient inertia or unbalance.

D'autres matériaux que le silicium, eux aussi usinables par des techniques de micro-fabrication, et dont l'utilisation pour fabriquer des composants horlogers peut être envisagée, présentent les mêmes inconvénients. Ces matériaux sont notamment le diamant, le quartz, le verre et le carbure de silicium.Materials other than silicon, which can also be machined by micro-manufacturing techniques, and whose use for manufacturing watch components can be envisaged, have the same drawbacks. These materials include diamond, quartz, glass and silicon carbide.

Des procédés ont été développés pour permettre la micro-fabrication de composants horlogers pour des applications qui jusque-là n'étaient pas envisageables du fait des inconvénients précités des matériaux utilisés. Selon ces procédés, il est notamment prévu d'ajouter des parties métalliques à une pièce en silicium, par brasage, par insertion mécanique ou par création in-situ par voie galvanique.Processes have been developed to allow the micro-manufacture of watch components for applications which hitherto were not possible due to the aforementioned drawbacks of the materials used. According to these methods, provision is made in particular to add metal parts to a silicon part, by brazing, by mechanical insertion or by in-situ creation by galvanic means.

Un tel procédé développé par la demanderesse est par exemple décrit dans la demande WO 2008/135817 . Ce procédé propose de fabriquer un composant horloger comprenant une structure réalisée par une technique de micro-fabrication et au moins un élément formé dans ou à la périphérie de la structure dans un matériau différent de celui de la structure, ledit procédé comprenant la réalisation d'une structure comprenant une cavité qui traverse entièrement ladite structure, l'assemblage de cette structure sur un support possédant une couche conductrice au moyen d'une couche de résine photosensible déposée à la surface du support et servant de colle temporaire, et l'exposition de l'ensemble afin d'éliminer la résine photosensible apparaissant au fond de la cavité de manière à faire apparaitre la couche conductrice à partir de laquelle le remplissage de la cavité par déposition galvanique d'un métal est réalisé. La structure en silicium, avec son élément métallique, est ensuite séparée de son support.Such a method developed by the applicant is for example described in the application. WO 2008/135817 . This process proposes to manufacture a component watchmaker comprising a structure produced by a micro-manufacturing technique and at least one element formed in or at the periphery of the structure in a material different from that of the structure, said method comprising the production of a structure comprising a cavity which passes through said structure entirely, assembling this structure on a support having a conductive layer by means of a layer of photosensitive resin deposited on the surface of the support and serving as a temporary adhesive, and exposing the assembly in order to eliminate the photosensitive resin appearing at the bottom of the cavity so as to reveal the conductive layer from which the filling of the cavity by galvanic deposition of a metal is carried out. The silicon structure, with its metallic element, is then separated from its support.

Ce procédé très avantageux permet de former l'élément métallique dans ou à la périphérie de la structure, en utilisant la structure comme moule pour la croissance galvanique, et non de le rapporter. Tout le composant horloger peut donc être fabriqué par des techniques de micro-fabrication, c'est-à-dire des techniques permettant une précision de l'ordre du micron. L'élément métallique formé ne nuit donc pas à la précision de fabrication du composant.This very advantageous process makes it possible to form the metallic element in or at the periphery of the structure, using the structure as a mold for the galvanic growth, and not to bring it back. The entire watch component can therefore be manufactured by micro-manufacturing techniques, that is to say techniques allowing precision of the order of a micron. The formed metal element therefore does not adversely affect the manufacturing precision of the component.

Toutefois, certains défauts de croissance galvanique liés à un mauvais développement de la résine photosensible peuvent apparaitre, par exemple lorsque la configuration de la cavité est telle que la résine photosensible apparaissant au fond de la cavité ne peut pas être exposée correctement et de manière homogène sur toute la zone du support en regard de la cavité. Un autre problème peut survenir lorsque la configuration de la cavité est telle que la zone de résine photosensible exposée est beaucoup plus grande que la zone en regard de la cavité de sorte qu'il se produit sous la structure une croissance parasite sur une surface importante de la structure, délicate à éliminer, en particulier lorsque la structure est en matériau fragile tel que le silicium, et plus encore lorsque la structure présente une architecture complexe avec différents niveaux.However, certain galvanic growth defects linked to poor development of the photosensitive resin may appear, for example when the configuration of the cavity is such that the photosensitive resin appearing at the bottom of the cavity cannot be exposed correctly and homogeneously on the surface. the entire area of the support facing the cavity. Another problem can arise when the configuration of the cavity is such that the area of exposed photosensitive resin is much larger than the area facing the cavity so that spurious growth occurs under the structure over a large area of the surface. the structure, which is difficult to remove, in particular when the structure is made of a fragile material such as silicon, and even more so when the structure has a complex architecture with different levels.

La présente invention vise à remédier à ces inconvénients en proposant un nouveau procédé permettant d'éviter tout défaut de croissance galvanique.The present invention aims to remedy these drawbacks by proposing a new method making it possible to avoid any galvanic growth defect.

A cet effet, la présente invention concerne un procédé de fabrication d'un composant horloger comprenant une structure et au moins un élément formé dans ou à la périphérie de la structure dans un matériau différent de celui de la structure, ledit procédé comprenant les étapes successives suivantes :

  • réalisation de la structure, ladite structure comprenant au moins une cavité destinée à recevoir ledit élément,
  • réalisation d'un support comprenant au moins une couche métallique conductrice,
  • assemblage de la structure et du support de manière temporaire,
  • formation dudit élément par dépôt dudit matériau dans ladite cavité par croissance galvanique à partir de la couche métallique conductrice du support,
  • séparation de la structure de son support, et
  • mise à niveau de l'élément par rapport à la structure.
To this end, the present invention relates to a method of manufacturing a watch component comprising a structure and at least one element formed in or at the periphery of the structure in a material different from that of the structure, said method comprising the successive steps following:
  • realization of the structure, said structure comprising at least one cavity intended to receive said element,
  • production of a support comprising at least one conductive metal layer,
  • temporary assembly of the structure and support,
  • formation of said element by depositing said material in said cavity by galvanic growth from the conductive metal layer of the support,
  • separation of the structure from its support, and
  • leveling of the element relative to the structure.

Selon l'invention, l'étape de réalisation du support comprend, avant l'étape d'assemblage, la formation, sur la face du support destinée à être assemblée à la structure, d'au moins une zone contrôlée agencée pour, lors de l'assemblage, venir en regard d'au moins la cavité de la structure et pour permettre à la couche métallique conductrice de pouvoir apparaitre de manière à former, avec ladite cavité, un moule destiné à former ledit élément.According to the invention, the step of producing the support comprises, before the assembly step, the formation, on the face of the support intended to be assembled to the structure, of at least one controlled zone arranged for, during assembly, come opposite at least the cavity of the structure and to allow the conductive metal layer to appear so as to form, with said cavity, a mold intended to form said element.

La formation de zones contrôlées, aux contours délimités précisément sur le support, avant son assemblage avec la structure, permet à la couche métallique conductrice d'apparaitre ultérieurement, après assemblage, sur une zone définie avec précision et homogène afin de mieux contrôler la croissance galvanique et d'éviter toute croissance galvanique parasite.The formation of controlled zones, with precisely delimited contours on the support, before its assembly with the structure, allows the conductive metal layer to appear subsequently, after assembly, on a precisely defined and homogeneous zone in order to better control the galvanic growth. and to avoid any parasitic galvanic growth.

Selon un mode de réalisation particulièrement avantageux, dans lequel la structure est étagée sur au moins un premier et un deuxième niveaux différents, la surface occupée par une section transversale de la structure au deuxième niveau étant inférieure à la surface occupée par une section transversale de la structure au premier niveau, et l'élément se trouvant au moins au deuxième niveau, la cavité destinée à recevoir l'élément est agencée, lors de l'étape de réalisation de la structure, pour présenter une extrémité ouverte débouchant du deuxième niveau vers l'extérieur, et l'étape d'assemblage du support et de la structure comprend une étape de positionnement de la structure de sorte que ladite structure est assemblée au support par son deuxième niveau, l'extrémité ouverte de la cavité étant positionnée au regard de la zone contrôlée du support.According to a particularly advantageous embodiment, in which the structure is stepped over at least a first and a second different levels, the area occupied by a cross section of the structure at the second level being less than the area occupied by a cross section of the structure at the first level, and the element being at least at the second level, the cavity intended to receive the element is arranged, during the step of producing the structure, to have an open end opening out from the second level to the outside, and the step of assembling the support and the structure comprises a step of positioning the structure so that said structure is assembled to the support by its second level, the open end of the cavity being positioned facing the controlled area of the support.

Un tel positionnement de la structure sur le support permet de limiter la surface de contact entre le support et la structure, ce qui permet de réduire les zones de la structure où pourrait se produire une croissance galvanique parasite.Such positioning of the structure on the support makes it possible to limit the contact surface between the support and the structure, which makes it possible to reduce the areas of the structure where parasitic galvanic growth could occur.

D'autres caractéristiques et avantages de la présente invention apparaîtront à la lecture de la description détaillée suivante de plusieurs modes de réalisation de l'invention, donnés à titre d'exemples non limitatifs, et faite en référence aux dessins annexés dans lesquels :

  • la figure 1 montre schématiquement un procédé de fabrication selon l'invention d'un composant horloger à partir d'une structure présentant un seul niveau;
  • la figure 2 montre schématiquement l'étape de réalisation d'un support selon un procédé de fabrication de l'invention ;
  • la figure 3 montre schématiquement un procédé de fabrication selon l'invention d'un composant horloger à partir d'une structure présentant deux niveaux,
  • la figure 4 est une vue en perspective d'un balancier fabriqué selon un procédé de l'invention tel qu'illustré par la figure 3 ; et
  • la figure 5 est une vue en perspective d'une masse oscillante fabriquée selon un procédé de l'invention tel qu'illustré par la figure 3.
Other characteristics and advantages of the present invention will become apparent on reading the following detailed description of several embodiments of the invention, given by way of non-limiting examples, and made with reference to the appended drawings in which:
  • the figure 1 schematically shows a method of manufacturing according to the invention of a watch component from a structure having a single level;
  • the figure 2 schematically shows the step of producing a support according to a manufacturing method of the invention;
  • the figure 3 schematically shows a method of manufacturing according to the invention of a watch component from a structure having two levels,
  • the figure 4 is a perspective view of a balance manufactured according to a method of the invention as illustrated by figure 3 ; and
  • the figure 5 is a perspective view of an oscillating weight manufactured according to a method of the invention as illustrated by figure 3 .

La présente invention concerne un procédé de fabrication d'un composant horloger comprenant une structure principale et au moins un élément formé dans ou à la périphérie de ladite structure dans un matériau différent de celui de la structure.The present invention relates to a method of manufacturing a watch component comprising a main structure and at least one element formed in or at the periphery of said structure in a material different from that of the structure.

En référence à la figure 1, le procédé de l'invention comprend les étapes suivantes :
La première étape, comme représenté par la figure 1a, consiste à réaliser une structure 1 comprenant au moins une cavité traversante 2 destinée à recevoir ledit élément 3 (cf. Figure 1g). La structure 1 est de préférence préalablement configurée de façon à réaliser le composant horloger de la forme finale désirée.With reference to the figure 1 , the method of the invention comprises the following steps:
The first stage, as represented by the figure 1a , consists in producing a structure 1 comprising at least one through cavity 2 intended to receive said element 3 (cf. Figure 1g ). The structure 1 is preferably configured beforehand so as to produce the watch component of the desired final shape.

La structure 1 est réalisée dans un matériau choisi parmi le groupe comprenant le silicium, le silicium oxydé, le diamant, le quartz, le verre ou le carbure de silicium. De préférence, la structure 1 est en silicium ou en silicium oxydé, c'est-à-dire qu'elle est réalisée à partir d'un substrat en silicium 4, tel qu'un wafer de silicium, recouvert d'une couche d'oxyde de silicium 5.Structure 1 is made of a material chosen from the group comprising silicon, oxidized silicon, diamond, quartz, glass or silicon carbide. Preferably, the structure 1 is made of silicon or oxidized silicon, that is to say it is made from a silicon substrate 4, such as a silicon wafer, covered with a layer of 'silicon oxide 5.

La structure 1 est réalisée de préférence par des techniques de micro-fabrication ou micro-formage. D'une manière particulièrement avantageuse, l'étape de réalisation de la structure 1 est effectuée par la technique de gravure ionique réactive profonde DRIE (Deep Reactive Ion Etching).The structure 1 is preferably produced by micro-manufacturing or micro-forming techniques. In a particularly advantageous manner, the step of producing the structure 1 is carried out by the technique of deep reactive ion etching DRIE (Deep Reactive Ion Etching).

Dans l'exemple de la figure 1, la structure 1 est représentée comme n'ayant qu'un seul et même niveau, c'est-à-dire qu'elle est de hauteur constante. Dans ce cas, une seule étape de DRIE est nécessaire. La réalisation d'une telle structure est bien connue de l'homme du métier de sorte qu'une description plus détaillée de son procédé de fabrication n'est ici pas nécessaire.In the example of figure 1 , the structure 1 is represented as having only one and the same level, that is to say that it is of constant height. In this case, only one DRIE step is necessary. The production of such a structure is well known to those skilled in the art so that a more detailed description of its manufacturing process is not necessary here.

La structure 1 peut comprendre une ou plusieurs cavités traversantes 2 destinées à recevoir un élément 3. Cette cavité traversante 2 présente des parois latérales 2a qui peuvent être définies en partie au moins par la structure 1 ou entièrement définies par la structure 1, comme représenté sur la figure 1 par exemple.The structure 1 may comprise one or more through cavities 2 intended to receive an element 3. This through cavity 2 has side walls 2a which may be defined in part at least by the structure 1 or entirely defined by the structure 1, as shown in the figure 1 for example.

La deuxième étape du procédé de l'invention consiste à réaliser un support 6 comprenant au moins une couche métallique conductrice 8, comme représenté sur la figure 1b.The second step of the method of the invention consists in producing a support 6 comprising at least one conductive metal layer 8, as shown in Figure figure 1b .

Cette deuxième étape de réalisation du support 6 est représentée plus précisément sur la figure 2. Le support 6 est réalisé par exemple en silicium, en silicium oxydé ou en pyrex. De préférence, le support 6 est réalisé à partir d'un substrat en silicium 10, tel qu'un wafer de silicium, recouvert d'une couche d'oxyde de silicium 12, tel que représenté sur la figure 2a.This second step of producing the support 6 is shown more precisely on the figure 2 . The support 6 is made for example of silicon, oxidized silicon or pyrex. Preferably, the support 6 is made from a silicon substrate 10, such as a silicon wafer, covered with a layer of silicon oxide 12, as shown in FIG. figure 2a .

Le support 6 est ensuite préparé par dépôt, sur la face fonctionnelle 6a du substrat en silicium oxydé 10, 12 destinée à être assemblée à la structure 1, d'une première couche de résine photosensible 14 comme représenté sur la figure 2b. Une telle couche de résine photosensible 14 est utilisée comme couche de passivation.The support 6 is then prepared by depositing, on the functional face 6a of the oxidized silicon substrate 10, 12 intended to be assembled to the structure 1, a first layer of photosensitive resin 14 as shown in FIG. figure 2b . Such a photosensitive resin layer 14 is used as a passivation layer.

Puis, comme représenté sur la figure 2c, la couche métallique conductrice 8 est déposée au-dessus de la première couche de résine photosensible 14, du côté de la face fonctionnelle 6a. Cette couche métallique conductrice 8 est réalisée dans un métal utilisé pour la croissance galvanique de l'élément 3 dans la cavité 2. Cette couche métallique conductrice 8 est par exemple une couche d'or. La couche métallique conductrice 8 peut être positionnée entre d'autres couches métalliques, formant un ensemble métallique multicouches. Par exemple, il est possible de prévoir, entre la première couche de résine photosensible 14 et la couche métallique conductrice 8, une très fine couche métallique d'accroché (non représentée), réalisée par exemple en titane. Après le dépôt de la couche métallique conductrice 8, il est possible de prévoir une étape de dépôt d'une couche métallique sacrificielle 16 sur la couche métallique conductrice 8. Cette couche métallique sacrificielle 16 est une très fine couche métallique réalisée par exemple en titane ou en alliage de cuivre et de titane, permettant de protéger la couche métallique conductrice 8 de toute oxydation avant l'étape de la croissance galvanique. Les différentes couches métalliques peuvent être déposées par exemple par PVD. La couche métallique sacrificielle 16 peut être déposée par exemple par un procédé Flash.Then, as shown in the figure 2c , the conductive metal layer 8 is deposited above the first layer of photosensitive resin 14, on the side of the functional face 6a. This conductive metal layer 8 is made of a metal used for the galvanic growth of the element 3 in the cavity 2. This conductive metal layer 8 is for example a gold layer. The conductive metal layer 8 can be positioned between other metal layers, forming a multilayer metal assembly. For example, it is possible to provide, between the first layer of photosensitive resin 14 and the conductive metal layer 8, a very thin metal bond layer (not shown), made for example of titanium. After the deposition of the conductive metal layer 8, it is possible to provide a step of depositing a sacrificial metal layer 16 on the conductive metal layer 8. This sacrificial metal layer 16 is a very thin metal layer made for example of titanium or made of copper and titanium alloy, making it possible to protect the conductive metal layer 8 from any oxidation before the galvanic growth step. The different layers metal can be deposited for example by PVD. The sacrificial metal layer 16 can be deposited for example by a Flash process.

Puis, comme représenté sur la figure 2d, l'étape de réalisation du support 6 comprend avantageusement une étape de dépôt d'une couche de parylène 18 au moins au-dessus de la couche métallique conductrice 8, du côté de la face fonctionnelle 6a du support 6, et plus spécifiquement sur la couche sacrificielle 16 lorsqu'elle est présente. La couche de parylène 18 est déposée, selon un procédé connu de l'homme du métier, à de basses températures, par exemple tout autour du support 6. L'épaisseur de la couche de parylène 18 est de préférence comprise entre 0.5 µm et 8 µm.Then, as shown in the figure 2d , the step of producing the support 6 advantageously comprises a step of depositing a parylene layer 18 at least above the conductive metal layer 8, on the side of the functional face 6a of the support 6, and more specifically on the sacrificial layer 16 when present. The parylene layer 18 is deposited, according to a method known to those skilled in the art, at low temperatures, for example all around the support 6. The thickness of the parylene layer 18 is preferably between 0.5 μm and 8. µm.

La couche de parylène qui a été déposée sur la face inopérante 6b du support 6, opposée à la face fonctionnelle 6a qui comprend la couche de résine photosensible 14 et la couche métallique conductrice 8 déjà déposées, peut être éliminée par gravure ionique réactive RIE (Reactive Ion Etching).The parylene layer which has been deposited on the inoperative face 6b of the support 6, opposite to the functional face 6a which comprises the photosensitive resin layer 14 and the conductive metal layer 8 already deposited, can be removed by reactive ionic etching RIE (Reactive Ion Etching).

La couche de parylène 18 permet de garantir que les cavités traversantes 20 de la structure 1 non destinées à recevoir un élément 3 restent isolées de la couche métallique conductrice 8 afin de ne pas être sujettes à une croissance galvanique parasite, notamment au travers de défauts que pourrait présenter la première couche de résine photosensible 14 au niveau de ces cavités traversantes 20.The parylene layer 18 makes it possible to ensure that the through cavities 20 of the structure 1 not intended to receive an element 3 remain isolated from the conductive metal layer 8 so as not to be subject to parasitic galvanic growth, in particular through faults that could have the first layer of photosensitive resin 14 at the level of these through cavities 20.

Puis, conformément à l'invention, l'étape de réalisation du support 6 comprend la formation, sur la face fonctionnelle 6a du support 6 destinée à être assemblée à la structure 1, d'au moins une zone contrôlée 22 agencée pour, lors de l'assemblage de la structure 1 sur le support 6, venir en regard d'au moins la cavité 2 de la structure 1 destinée à recevoir l'élément 3 et pour permettre à la couche métallique conductrice 8 de pouvoir apparaitre de manière à former, avec les parois latérales 2a de ladite cavité 2, un moule destiné à former ledit élément 3, la couche métallique conductrice 8 exposée constituant un fond conducteur du moule.Then, in accordance with the invention, the step of producing the support 6 comprises the formation, on the functional face 6a of the support 6 intended to be assembled to the structure 1, of at least one controlled zone 22 arranged for, during the assembly of the structure 1 on the support 6, come opposite at least the cavity 2 of the structure 1 intended to receive the element 3 and to allow the conductive metal layer 8 to appear so as to form, with the side walls 2a of said cavity 2, a mold intended to form said element 3, the exposed conductive metal layer 8 constituting a conductive bottom of the mold.

La zone 22 est positionnée sur le support 6 de manière à correspondre au positionnement et est dimensionnée de manière à présenter des dimensions au moins égales aux dimensions, en section transversale, de l'extrémité de la cavité 2 dans la structure 1.The zone 22 is positioned on the support 6 so as to correspond to the positioning and is dimensioned so as to have dimensions at least equal to the dimensions, in cross section, of the end of the cavity 2 in the structure 1.

Cette étape, réalisée avant l'étape d'assemblage de la structure 1 sur le support 6, permet de définir avec une grande précision la zone 22 du support 6 en regard de la cavité 2, zone 22 uniquement à partir de laquelle le remplissage de la cavité 2 par déposition galvanique d'un métal pour former l'élément 3 sera réalisé.This step, carried out before the step of assembling the structure 1 on the support 6, makes it possible to define with great precision the zone 22 of the support 6 facing the cavity 2, zone 22 only from which the filling of the cavity 2 by galvanic deposition of a metal to form the element 3 will be produced.

A cet effet, et d'une manière particulièrement préférée, l'étape de réalisation du support 6 comprend une étape de dépôt d'une deuxième couche de résine photosensible 24 au moins sur la face fonctionnelle 6a du support 6 destinée à être assemblée à la structure 1, ainsi qu'une étape de formation, au moins dans ladite deuxième couche de résine photosensible 24, d'une ouverture 26 correspondant à la zone contrôlée 22. Cette ouverture 26, contrôlée dans son positionnement et dans ses dimensions, est avantageusement formée par un procédé photolithographique en utilisant un masque disposé sur le support 6, préparé spécifiquement au préalable, et comprenant une fenêtre correspondant à l'emplacement de la cavité 2 sur la structure 1 et présentant des dimensions au moins égales aux dimensions, en section transversale, de l'extrémité ouverte de la cavité 2. L'ouverture 26 n'est toutefois pas trop grande afin de ne pas former une excroissance d'élément métallique trop importante, comme on le verra ci-après. Les parties de la résine photosensible 24 exposées au travers du masque sont éliminées, laissant apparaitre, dans l'ouverture 26, le parylène 18, comme le montre la figure 2e.To this end, and in a particularly preferred manner, the step of producing the support 6 comprises a step of depositing a second layer of photosensitive resin 24 at least on the functional face 6a of the support 6 intended to be assembled to the structure 1, as well as a step of forming, at least in said second layer of photosensitive resin 24, an opening 26 corresponding to the controlled zone 22. This opening 26, controlled in its positioning and in its dimensions, is advantageously formed by a photolithographic process using a mask arranged on the support 6, specifically prepared beforehand, and comprising a window corresponding to the location of the cavity 2 on the structure 1 and having dimensions at least equal to the dimensions, in cross section, of the open end of the cavity 2. The opening 26 is not, however, too large so as not to form too large a protuberance of a metal element, as can be seen from ra below. The parts of the photosensitive resin 24 exposed through the mask are removed, allowing the parylene 18 to appear in the opening 26, as shown in figure figure 2e .

Selon le procédé de l'invention, l'exposition de la deuxième couche de résine photosensible 24 avant l'assemblage de la structure 1 sur son support 6 permet un meilleur contrôle de la zone illuminée au travers du masque spécifique déposé sur le support 6 et de former la zone contrôlée 22 délimitée pour la croissance galvanique ultérieure, en évitant toute exposition parasite, non contrôlée, de la deuxième couche de résine photosensible 24 qui entrainerait une croissance galvanique parasite. La configuration de la cavité 2 de la structure 1, utilisée comme masque sur le support dans les procédés connus, est désormais sans influence sur l'exposition de la deuxième couche de résine photosensible 24 qui peut être parfaitement et plus facilement limitée à la zone contrôlée 22.According to the method of the invention, the exposure of the second layer of photosensitive resin 24 before the assembly of the structure 1 on its support 6 allows better control of the illuminated area through the specific mask deposited on the support 6 and to form the controlled zone 22 delimited for the subsequent galvanic growth, avoiding any parasitic, uncontrolled exposure of the second layer of photosensitive resin 24 which would cause parasitic galvanic growth. The configuration of the cavity 2 of the structure 1, used as a mask on the support in the known methods, is now without influence on the exposure of the second layer of photosensitive resin 24 which can be perfectly and more easily limited to the controlled area. 22.

Puis, en référence de nouveau à la figure 1, le procédé de l'invention se poursuit par une étape d'assemblage temporaire de la structure 1 et du support 6, préparés tels que décrit ci-dessus, et comme représenté sur la figure 1c.Then, with reference again to the figure 1 , the method of the invention continues with a step of temporary assembly of the structure 1 and of the support 6, prepared as described above, and as shown in Figure figure 1c .

La structure 1 est positionnée au-dessus du support 6 de sorte que l'extrémité ouverte de la cavité 2 vienne en regard de la zone contrôlée 22 correspondante prévue sur le support 6.The structure 1 is positioned above the support 6 so that the open end of the cavity 2 faces the corresponding controlled zone 22 provided on the support 6.

L'assemblage de la structure 1 et du support 6 est de préférence réalisé par collage au moyen de la deuxième couche de résine photosensible 24 non exposée, restant à la surface du support 6, et qui sert de colle.The assembly of the structure 1 and of the support 6 is preferably carried out by bonding by means of the second layer of non-exposed photosensitive resin 24, remaining on the surface of the support 6, and which serves as an adhesive.

D'autres moyens de formation de la zone contrôlée 22 et d'assemblage temporaire de la structure 1 avec son support 6 peuvent être utilisés, l'essentiel étant de laisser dégagée une zone contrôlée 22 du support 6 donnant accès à une zone contrôlée de la couche métallique conductrice 8 qui viendra en regard de la cavité correspondante 2, point de départ contrôlé de la croissance galvanique ultérieure.Other means of forming the controlled zone 22 and temporarily assembling the structure 1 with its support 6 can be used, the main thing being to leave a controlled zone 22 of the support 6 clear, giving access to a controlled zone of the support. conductive metal layer 8 which will come opposite the corresponding cavity 2, a controlled starting point for subsequent galvanic growth.

Lorsqu'une couche de parylène 18 a été déposée sur le support 6 comme décrit ci-dessus, l'étape d'assemblage du procédé de l'invention comprend ensuite une étape d'élimination du parylène 18 dans la zone contrôlée 22, et plus spécifiquement au niveau de la zone correspondant à l'ouverture 26 dans la deuxième couche de résine photosensible 24, comme le montre la figure 1d. Le parylène 18 peut être éliminé par exemple par gravure ionique réactive RIE (Reactive Ion Etching). Cela permet de faire apparaitre dans l'ouverture 26 la couche métallique conductrice 8 ou la couche métallique sacrificielle 16 lorsqu'elle est présente (non représentée sur la figure 1).When a layer of parylene 18 has been deposited on the support 6 as described above, the assembly step of the method of the invention then comprises a step of removing the parylene 18 in the controlled zone 22, and more specifically at the area corresponding to the opening 26 in the second layer of photosensitive resin 24, as shown in figure 1d . The parylene 18 can be removed, for example, by reactive ion etching RIE (Reactive Ion Etching). This allows the conductive metal layer 8 or the sacrificial metal layer 16 to appear in the opening 26 when it is present (not shown in the figure. figure 1 ).

L'élimination du parylène uniquement au niveau de l'ouverture 26 permet d'améliorer le contrôle de la sélectivité et d'éviter des croissances parasites de la zone 22 pour la croissance galvanique ultérieure.The elimination of parylene only at the level of the opening 26 makes it possible to improve the control of the selectivity and to avoid parasitic growths of the zone 22 for the subsequent galvanic growth.

Dans le cas où la couche métallique sacrificielle 16 est présente, l'étape d'assemblage du procédé de l'invention comprend ensuite une étape d'élimination du métal sacrificiel 16 dans la zone contrôlée 22, et plus spécifiquement au niveau de la zone correspondant à l'ouverture 26. Le métal sacrificiel peut être éliminé par exemple par trempage dans un bain acide. Cela permet de faire apparaitre dans l'ouverture 26 la couche métallique conductrice 8 qui va former le fond conducteur du moule, point de départ de la croissance galvanique pour la formation de l'élément 3.In the case where the sacrificial metal layer 16 is present, the assembly step of the method of the invention then comprises a step of eliminating the sacrificial metal 16 in the controlled zone 22, and more specifically at the level of the corresponding zone. at the opening 26. The sacrificial metal can be removed for example by soaking in an acid bath. This makes it possible to reveal in the opening 26 the conductive metal layer 8 which will form the conductive bottom of the mold, the starting point of the galvanic growth for the formation of the element 3.

Comme le montre la figure 1e, l'étape suivante du procédé de l'invention consiste à former l'élément 3 par dépôt, dans la cavité 2, du matériau constituant ledit élément 3, différent de celui de la structure 1. Le dépôt du matériau dans la cavité 2 est réalisé par croissance galvanique à partir de la zone rendue accessible de la couche conductrice métallique 8 au niveau de l'ouverture 26 définissant la zone contrôlée 22 du support 6, en utilisant le moule formé par ladite zone exposée de la couche conductrice métallique 8 ainsi que par les parois latérales 2a de la cavité 2 de la structure 1.As shown in the figure 1e , the next step of the method of the invention consists in forming the element 3 by depositing, in the cavity 2, the material constituting said element 3, different from that of the structure 1. The deposition of the material in the cavity 2 is produced by galvanic growth from the area made accessible of the metallic conductive layer 8 at the level of the opening 26 defining the controlled area 22 of the support 6, using the mold formed by said exposed area of the metallic conductive layer 8 as well as by the side walls 2a of the cavity 2 of the structure 1.

De préférence, ledit matériau formant l'élément 3 est un métal. De préférence, l'élément 3 est réalisé dans un matériau de plus grande masse volumique que le matériau de la structure 1, tel que silicium. L'élément métallique 3 est de préférence réalisé en or. Il pourrait néanmoins être fait dans un autre métal, en particulier un autre métal à masse volumique élevée, tel que Ni, NiP, ou tout autre métal électro-formable.Preferably, said material forming element 3 is a metal. Preferably, the element 3 is made of a material of greater density than the material of the structure 1, such as silicon. The metallic element 3 is preferably made of gold. It could nevertheless be made in another metal, in particular another metal with a high density, such as Ni, NiP, or any other electro-formable metal.

De préférence, l'élément métallique 3 est dans le même plan que la structure 1 et a la même hauteur, constante, que cette dernière.Preferably, the metal element 3 is in the same plane as the structure 1 and has the same constant height as the latter.

Puis, comme le montre la figure 1f, l'étape suivante du procédé de l'invention consiste à séparer la structure 1 de son support 6, par exemple par dissolution de la deuxième couche de résine photosensible 24. On obtient la structure 1 avec un élément métallique 3 formé dans la cavité 2, et terminé par une excroissance métallique 28 qui s'est formée dans l'espace dégagé de la zone contrôlée 22, au niveau de l'ouverture 26.Then, as shown in figure 1f , the next step of the process of the invention consists in separating the structure 1 from its support 6, for example by dissolving the second layer of photosensitive resin 24. The structure 1 is obtained with a metallic element 3 formed in the cavity 2, and terminated by a metallic protuberance 28 which is formed in the space cleared of the controlled zone 22, at the level of opening 26.

Enfin, comme le montre la figure 1g, la dernière étape du procédé de l'invention consiste à mettre à niveau l'élément 3 par rapport à la structure 1. Cette opération est réalisée par exemple par rodage pour éliminer l'excroissance métallique 28 de manière à donner à l'élément 3 la même hauteur que la structure 1.Finally, as shown in figure 1g , the last step of the method of the invention consists in leveling the element 3 with respect to the structure 1. This operation is carried out for example by lapping in order to eliminate the metallic protuberance 28 so as to give the element 3 the same height as structure 1.

Le procédé de l'invention permet de limiter la formation des excroissances métalliques 28 uniquement aux zones contrôlées 22, de sorte qu'elles peuvent être repérées et éliminées facilement. La structure 1 ne présente pas d'autres zones de croissance galvanique parasite.The method of the invention makes it possible to limit the formation of the metal protuberances 28 only to the controlled areas 22, so that they can be identified and easily removed. Structure 1 does not exhibit other zones of parasitic galvanic growth.

Selon une variante du procédé de l'invention, la structure 1 peut présenter plusieurs niveaux en étant étagée sur au moins un premier et un deuxième niveaux différents l'un de l'autre.According to a variant of the method of the invention, the structure 1 can have several levels while being stepped on at least a first and a second level which are different from one another.

Dans l'exemple de la figure 3, la structure 1 est représentée comme ayant deux niveaux différents 1a, 1b. Dans ce cas, deux étapes de DRIE sont pratiquées pour réaliser les différents niveaux.In the example of figure 3 , structure 1 is shown as having two different levels 1a, 1b. In this case, two stages of DRIE are practiced to achieve the different levels.

Dans la présente description, le deuxième niveau 1b est défini de telle sorte que la surface occupée par une section transversale de la structure 1 au deuxième niveau 1b est inférieure à la surface occupée par une section transversale de la structure 1 au premier niveau 1a. L'élément 3 se trouve au moins au deuxième niveau 1b, et de préférence s'étend sur les deux niveaux 1a et 1b.In the present description, the second level 1b is defined such that the area occupied by a cross section of the structure 1 at the second level 1b is less than the area occupied by a cross section of the structure 1 at the first level 1a. Element 3 is located at least at the second level 1b, and preferably extends over the two levels 1a and 1b.

La réalisation d'une telle structure est bien connue de l'homme du métier de sorte qu'une description plus détaillée de son procédé de fabrication n'est ici pas nécessaire. Comme décrit ci-dessus, la structure 1 comprend de préférence un substrat de silicium 4 recouvert d'une couche d'oxyde de silicium 5. Il est cependant précisé que lors de l'étape de réalisation de la structure 1, la cavité 2 destinée à recevoir l'élément 3 est agencée pour présenter une extrémité 2b ouverte débouchant du deuxième niveau 1b vers l'extérieur.The production of such a structure is well known to those skilled in the art so that a more detailed description of its manufacturing process is not necessary here. As described above, the structure 1 preferably comprises a silicon substrate 4 covered with a layer of silicon oxide 5. It is however specified that during the step of producing the structure 1, the cavity 2 intended for at receiving the element 3 is arranged to have an open end 2b opening out from the second level 1b outwards.

Dans cette variante, le support 6 est réalisé de la même manière que décrit ci-dessus, en référence à la figure 2 notamment. Il comprend notamment le substrat de silicium 10 recouvert d'une couche d'oxyde de silicium 12, et sur sa face fonctionnelle 6a, la première couche de résine photosensible 14, éventuellement une très fine couche métallique d'accroché, la couche métallique conductrice 8, éventuellement une couche métallique sacrificielle, la couche de parylène 18 et la deuxième couche de résine photosensible 24. Comme décrit ci-dessus, le support 6 comprend dans ladite deuxième couche de résine photosensible 24, l'ouverture 26 correspondant à la zone contrôlée 22, en regard de la cavité 2 du support 1, comme représenté sur la figure 3a.In this variant, the support 6 is made in the same way as described above, with reference to figure 2 especially. It comprises in particular the silicon substrate 10 covered with a layer of silicon oxide 12, and on its functional face 6a, the first layer of photosensitive resin 14, optionally a very thin metal bonding layer, the conductive metal layer 8 , optionally a sacrificial metal layer, the parylene layer 18 and the second layer of photosensitive resin 24. As described above, the support 6 comprises in said second layer of photosensitive resin 24, the opening 26 corresponding to the controlled zone 22 , facing the cavity 2 of the support 1, as shown in figure 3a .

Dans cette variante, l'étape d'assemblage du support 6 et de la structure 1 comprend une étape de positionnement de la structure 1 de sorte que ladite structure 1 est assemblée au support 6 par son deuxième niveau 1b, l'extrémité ouverte 2b de la cavité 2 étant positionnée au regard de la zone contrôlée 22 du support 6, comme le montre la figure 3a.In this variant, the step of assembling the support 6 and the structure 1 comprises a step of positioning the structure 1 so that said structure 1 is assembled to the support 6 by its second level 1b, the open end 2b of the cavity 2 being positioned opposite the controlled zone 22 of the support 6, as shown in figure 3a .

Ainsi, par rapport à sa position usuelle utilisée dans les procédés connus, la structure 1 est retournée de manière à positionner la face de son deuxième niveau en regard du support 6, ledit deuxième niveau représentant une surface inférieure à celle du premier niveau, afin d'avoir la plus petite surface de contact possible avec ledit support 6.Thus, relative to its usual position used in the known methods, the structure 1 is turned over so as to position the face of its second level facing the support 6, said second level representing a surface smaller than that of the first level, in order to '' have the smallest possible contact surface with said support 6.

De préférence, la cavité 2 et les parois 30 de la structure 1 définissant la cavité 2 sont dimensionnées pour permettre à la structure 1, et plus particulièrement au deuxième niveau 1b de la structure 1, d'avoir une surface de contact avec le support 6 suffisante de manière à garantir une bonne adhésion entre le support 6 et la structure 1 au moment de l'assemblage. Cela permet notamment d'assurer la tenue de l'assemblage lors de la croissance galvanique.Preferably, the cavity 2 and the walls 30 of the structure 1 defining the cavity 2 are dimensioned to allow the structure 1, and more particularly at the second level 1b of the structure 1, to have a contact surface with the support 6 sufficient to ensure good adhesion between the support 6 and the structure 1 at the time of assembly. This makes it possible in particular to ensure the strength of the assembly during galvanic growth.

Ainsi, comme représenté sur la figure 3e, la cavité 2 étant définie par les parois 30 de la structure 1 d'épaisseur e (en section transversale) peut présenter une hauteur h choisie de telle sorte que le rapport e/h peut être par exemple d'une part supérieur à 0.25, de préférence supérieur à 0.3, et de préférence supérieur à 0.35, et d'autre part inférieur à 0.85, de préférence inférieur à 0.75, ou de préférence inférieur à 0.55, voire inférieur à 0.4, selon l'utilisation prévue du composant horloger et la position de la paroi sur le composant.Thus, as shown in the figure 3e , the cavity 2 being defined by the walls 30 of the structure 1 of thickness e (in cross section) may have a height h chosen such that the ratio e / h may for example be greater than 0.25, for example, preferably greater than 0.3, and preferably greater than 0.35, and on the other hand less than 0.85, preferably less than 0.75, or preferably less than 0.55, or even less than 0.4, depending on the intended use of the watch component and the position of the wall on the component.

De plus, dans le cas notamment où le composant horloger est un balancier, l'épaisseur de la paroi de la structure qui est située le plus à la périphérie doit être minimale afin de ne pas perturber le rapport masse/inertie du balancier. De ce fait, le rapport e/h peut avantageusement être compris entre 0.3 et 0.4 au niveau d'une paroi située à l'intérieur du balancier, et entre 0.25 et 0.35 au niveau d'une paroi située en périphérie.In addition, in the particular case where the watch component is a balance, the thickness of the wall of the structure which is located furthest to the periphery must be minimal so as not to disturb the mass / inertia ratio of the balance. As a result, the w / h ratio can advantageously be between 0.3 and 0.4 at a wall located inside the balance, and between 0.25 and 0.35 at a wall located at the periphery.

Avantageusement, la cavité 2 présente, en section transversale, une largeur L séparant les deux parois opposées 30 de la structure 1, choisie de telle sorte que le rapport h/L est compris de préférence entre 0.1 et 0.9, et de préférence inférieur à 0.8, de préférence inférieur à 0.7, et de préférence inférieur à 0.6, voire 0.5 ou 0.4.Advantageously, the cavity 2 has, in cross section, a width L separating the two opposite walls 30 of the structure 1, chosen such that the ratio h / L is preferably between 0.1 and 0.9, and preferably less than 0.8 , preferably less than 0.7, and preferably less than 0.6, or even 0.5 or 0.4.

Après l'assemblage de la structure 1 et du support 6, les étapes du procédé selon la deuxième variante, sont identiques aux étapes décrites ci-dessus en relation avec la variante de la figure 1. Plus particulièrement, le parylène 18 est éliminé au niveau de la zone correspondant à l'ouverture 26 dans la deuxième couche de résine photosensible 24, donnant accès à la couche métallique conductrice 8, comme le montre la figure 3b. Puis, dans le cas où une couche métallique sacrificielle, ledit métal sacrificiel est éliminé au niveau de la zone correspondant à l'ouverture 26.After the assembly of the structure 1 and the support 6, the steps of the method according to the second variant are identical to the steps described above in relation to the variant of the figure 1 . More particularly, the parylene 18 is eliminated at the level of the zone corresponding to the opening 26 in the second layer of photosensitive resin 24, giving access to the conductive metal layer 8, as shown in FIG. figure 3b . Then, in the case where a sacrificial metal layer, said sacrificial metal is eliminated at the level of the zone corresponding to the opening 26.

Ensuite, comme le montre la figure 3c, l'élément 3 est formé dans la cavité 2 par croissance galvanique à partir de la zone dégagée de la couche conductrice métallique 8, le remplissage de la cavité 2 se faisant par son extrémité 2b du côté du deuxième niveau 1b.Then, as shown in the figure 3c , the element 3 is formed in the cavity 2 by galvanic growth from the free area of the conductive layer metal 8, the cavity 2 being filled through its end 2b on the side of the second level 1b.

Puis, comme le montre la figure 3d, l'étape suivante du procédé de l'invention consiste à séparer la structure 1 de son support 6. On obtient la structure 1 avec un élément métallique 3 formé dans la cavité 2, et terminé par une excroissance métallique 28 qui s'est formée dans l'espace dégagé de la zone contrôlée 22, au niveau de l'ouverture 26.Then, as shown in 3d figure , the next step of the method of the invention consists in separating the structure 1 from its support 6. The structure 1 is obtained with a metallic element 3 formed in the cavity 2, and terminated by a metallic protuberance 28 which has formed. in the open space of the controlled area 22, at the level of the opening 26.

Enfin, comme le montre la figure 3e, la dernière étape du procédé de l'invention consiste à mettre à niveau l'élément 3 par rapport à la structure 1. La mise à niveau se fait donc du côté du deuxième niveau 1b qui occupe en section transversale la plus petite surface, sans risquer d'abimer le premier niveau 1a de la structure 1.Finally, as shown in figure 3e , the last step of the method of the invention consists in leveling the element 3 with respect to the structure 1. The leveling is therefore done on the side of the second level 1b which occupies the smallest area in cross section, without risk damaging the first level 1a of structure 1.

Grâce au procédé de l'invention, la surface du premier niveau 1a de la structure, qui représente en section transversale, la surface la plus importante, n'est pas au contact du support 6 de sorte qu'aucune croissance galvanique parasite, qui serait difficile à éliminer sur une grande surface, ne peut se produire. Seules sont à éliminer les excroissances métalliques 28 formées uniquement au niveau des zones contrôlées 22 du côté du deuxième niveau 1b, occupant en section transversale une plus petite surface, de sorte qu'elles sont réduites et peuvent être repérées et éliminées facilement, sans risquer de casser la structure 1.Thanks to the method of the invention, the surface of the first level 1a of the structure, which represents in cross section, the most important surface, is not in contact with the support 6 so that no parasitic galvanic growth, which would be difficult to remove over a large area, cannot occur. Only the metal protuberances 28 formed only at the level of the controlled areas 22 on the side of the second level 1b, occupying a smaller surface area in cross section, are to be removed, so that they are reduced and can be identified and removed easily, without risking damage. break the structure 1.

Le procédé de l'invention est utilisé pour fabriquer un composant horloger, tel qu'un balancier 31, représenté sur la figure 4, l'élément 3 étant placé à la périphérie de la structure 1 et servant à augmenter le rapport inertie/masse du balancier. Ledit balancier 31 comprend une planche 32 constituant le premier niveau 1a de la structure 1 et comprenant un orifice central 34, ainsi que deux caissons fermés constitués par les parois 30 de la structure 1 prévues sur le deuxième niveau 1b et définissant les cavités 2, par exemple en forme de haricot, remplies par les éléments métalliques 3.The method of the invention is used to manufacture a horological component, such as a balance 31, shown in FIG. figure 4 , the element 3 being placed at the periphery of the structure 1 and serving to increase the inertia / mass ratio of the balance. Said balance 31 comprises a board 32 constituting the first level 1a of the structure 1 and comprising a central orifice 34, as well as two closed boxes formed by the walls 30 of the structure 1 provided on the second level 1b and defining the cavities 2, by bean-shaped example, filled with metal elements 3.

Le procédé de l'invention peut être également utilisé pour fabriquer un composant horloger tel qu'une masse oscillante pour remontage automatique, l'élément métallique étant placé à la périphérie de la structure et servant à augmenter le rapport balourd/masse de le masse oscillante.The method of the invention can also be used to manufacture a watch component such as an oscillating weight for automatic winding, the metal element being placed at the periphery of the structure and serving to increase the unbalance / mass ratio of the oscillating weight. .

La masse oscillante comprend une structure formée d'une partie centrale mince et légère correspondant au premier niveau de la structure et d'une partie périphérique plus haute correspondant au deuxième niveau. La partie périphérique de la structure comporte des cavités traversantes définies entièrement par la structure et remplies d'éléments métalliques formés selon le procédé de l'invention.The oscillating mass comprises a structure formed of a thin and light central part corresponding to the first level of the structure and of a higher peripheral part corresponding to the second level. The peripheral part of the structure comprises through cavities defined entirely by the structure and filled with metallic elements formed according to the method of the invention.

Selon une autre variante du procédé de l'invention, la cavité dans laquelle est formé l'élément métallique peut être définie partiellement par la structure et partiellement par de la résine photosensible.According to another variant of the method of the invention, the cavity in which the metallic element is formed may be defined partially by the structure and partially by photosensitive resin.

La figure 5 montre par exemple une masse oscillante 36 obtenue par une telle variante du procédé de l'invention.The figure 5 shows for example an oscillating mass 36 obtained by such a variant of the method of the invention.

La masse oscillante 36 comprend une structure 38 formée d'une partie centrale mince 38a, légère, correspondant au premier niveau de la structure 38 et d'une partie périphérique plus haute 38b correspondant au deuxième niveau de la structure 38. La partie centrale 38a comprend un trou 40 pour le montage de la masse oscillante 36. La partie périphérique 38b définit à l'extérieur une surface périphérique 41 formant partiellement la cavité dans laquelle est formé l'élément métallique 42 sous la forme d'un arc de cercle s'étendant sur toute la longueur et toute la hauteur de la paroi périphérique 38b.The oscillating mass 36 comprises a structure 38 formed of a thin central part 38a, light, corresponding to the first level of the structure 38 and of a higher peripheral part 38b corresponding to the second level of the structure 38. The central part 38a comprises a hole 40 for mounting the oscillating weight 36. The peripheral part 38b defines on the outside a peripheral surface 41 partially forming the cavity in which the metal element 42 is formed in the form of an extending arc of a circle over the entire length and the entire height of the peripheral wall 38b.

A cet effet, l'étape de formation de l'élément métallique 42 consiste à déposer le matériau électro-formable de l'élément 42 dans une cavité définie d'une part par la structure 38, et plus spécifiquement par sa surface périphérique 41, et d'autre part par de la résine photosensible formée à l'extérieur de la structure 38, de sorte qu'après la séparation du support 6 et l'enlèvement de ladite résine photosensible, un élément 42 apparaisse, formé sur ladite surface périphérique 41 de la structure 38.To this end, the step of forming the metallic element 42 consists in depositing the electro-formable material of the element 42 in a cavity defined on the one hand by the structure 38, and more specifically by its peripheral surface 41, and on the other hand by the photosensitive resin formed outside the structure 38, so that after the separation of the support 6 and the removal of said photosensitive resin, an element 42 appears, formed on said peripheral surface 41 of structure 38.

De manière similaire à l'élément 42, un élément métallique circulaire pourrait être formé selon cette variante du procédé de l'invention sur une surface périphérique d'une structure en silicium, de manière continue ou discontinue, pour fabriquer un balancier, par exemple.Similarly to element 42, a circular metallic element could be formed according to this variant of the method of the invention on a peripheral surface of a silicon structure, continuously or discontinuously, to manufacture a balance, for example.

Claims (15)

Procédé de fabrication d'un composant horloger comprenant une structure (1 ; 38) et au moins un élément (3 ; 42) formé dans ou à la périphérie de la structure dans un matériau différent de celui de la structure, ledit procédé comprenant les étapes successives suivantes : - réalisation de la structure (1 ; 38), ladite structure comprenant au moins une cavité (2) destinée à recevoir ledit élément (3 ; 42) - réalisation d'un support (6) comprenant au moins une couche métallique conductrice (8), - assemblage de la structure (1 ; 38) et du support (6) de manière temporaire, - formation dudit élément (3 ; 42) par dépôt dudit matériau dans ladite cavité (2) par croissance galvanique à partir de la couche métallique conductrice (8) du support (6), - séparation de la structure (1 ; 38) de son support (6), et - mise à niveau de l'élément (3 ; 42) par rapport à la structure (1 ; 38), ledit procédé étant caractérisé en ce que l'étape de réalisation du support comprend, avant l'étape d'assemblage, la formation, sur la face (6a) du support (6) destinée à être assemblée à la structure (1 ; 38), d'au moins une zone contrôlée (22) agencée pour, lors de l'assemblage, venir en regard d'au moins la cavité (2) de la structure (1 ; 38) et pour permettre à la couche métallique conductrice (8) de pouvoir apparaitre de manière à former, avec ladite cavité (2), un moule destiné à former ledit élément (3 ; 42). A method of manufacturing a watch component comprising a structure (1; 38) and at least one element (3; 42) formed in or at the periphery of the structure in a material different from that of the structure, said method comprising the steps successive following: - realization of the structure (1; 38), said structure comprising at least one cavity (2) intended to receive said element (3; 42) - production of a support (6) comprising at least one conductive metal layer (8), - assembly of the structure (1; 38) and the support (6) temporarily, - formation of said element (3; 42) by depositing said material in said cavity (2) by galvanic growth from the conductive metal layer (8) of the support (6), - separation of the structure (1; 38) from its support (6), and - leveling of the element (3; 42) relative to the structure (1; 38), said method being characterized in that the step of producing the support comprises, before the assembly step, the formation , on the face (6a) of the support (6) intended to be assembled to the structure (1; 38), at least one controlled zone (22) arranged to, during assembly, come opposite to minus the cavity (2) of the structure (1; 38) and to allow the conductive metal layer (8) to appear so as to form, with said cavity (2), a mold intended to form said element (3; 42). Procédé selon la revendication 1, dans lequel la structure (1 ; 38) est étagée sur au moins un premier (1a) et un deuxième (1b) niveaux différents, la surface occupée par une section transversale de la structure (1 ; 38) au deuxième niveau (1b) étant inférieure à la surface occupée par une section transversale de la structure (1 ; 38) au premier niveau (1a), et l'élément (3 ; 42) se trouvant au moins au deuxième niveau (1b), caractérisé en ce que, lors de l'étape de réalisation de la structure (1 ; 38), la cavité (2) destinée à recevoir ledit élément (3 ; 42) est agencée pour présenter une extrémité ouverte (2b) débouchant du deuxième niveau (1b) vers l'extérieur, et en ce que l'étape d'assemblage du support (6) et de la structure (1 ; 38) comprend une étape de positionnement de la structure (1 ; 38) de sorte que ladite structure (1 ; 38) est assemblée au support (6) par son deuxième niveau (1b), l'extrémité ouverte (2b) de la cavité (2) étant positionnée au regard de la zone contrôlée (22) du support (6).A method according to claim 1, wherein the structure (1; 38) is stepped on at least a first (1a) and a second (1b) different levels, the area occupied by a cross section of the structure (1; 38) at the second level (1b) being less than the area occupied by a section transverse of the structure (1; 38) at the first level (1a), and the element (3; 42) located at least at the second level (1b), characterized in that , during the step of carrying out the structure (1; 38), the cavity (2) intended to receive said element (3; 42) is arranged to have an open end (2b) opening out from the second level (1b) to the outside, and in that the step of assembling the support (6) and the structure (1; 38) comprises a step of positioning the structure (1; 38) so that said structure (1; 38) is assembled to the support (6) by its second level (1b), the open end (2b) of the cavity (2) being positioned opposite the controlled zone (22) of the support (6). Procédé selon l'une des revendications précédentes, caractérisé en ce que l'étape de réalisation du support (6) comprend une étape de dépôt d'une couche de résine photosensible (24) au moins sur la face (6a) du support (6) destinée à être assemblée à la structure (1 ; 38), ainsi qu'une étape de formation, au moins dans ladite couche de résine photosensible (24), d'une ouverture (26) correspondant à la zone contrôlée (22).Method according to one of the preceding claims, characterized in that the step of producing the support (6) comprises a step of depositing a layer of photosensitive resin (24) at least on the face (6a) of the support (6). ) intended to be assembled to the structure (1; 38), as well as a step of forming, at least in said layer of photosensitive resin (24), an opening (26) corresponding to the controlled zone (22). Procédé selon l'une des revendications précédentes, caractérisé en ce que l'étape de réalisation du support (6) comprend une étape de dépôt d'une couche de parylène (18) au moins au-dessus de la couche métallique conductrice (8), et en ce que l'étape d'assemblage comprend une étape d'élimination du parylène dans la zone contrôlée (22).Method according to one of the preceding claims, characterized in that the step of producing the support (6) comprises a step of depositing a layer of parylene (18) at least above the conductive metal layer (8) , and in that the assembly step comprises a step of removing the parylene in the controlled zone (22). Procédé selon l'une des revendications précédentes, caractérisé en ce que l'étape de réalisation du support (6) comprend une étape de dépôt d'une couche métallique sacrificielle (16) sur la couche métallique conductrice (8), et en ce que l'étape d'assemblage comprend une étape d'élimination du métal sacrificiel dans la zone contrôlée (22).Method according to one of the preceding claims, characterized in that the step of producing the support (6) comprises a step of depositing a sacrificial metal layer (16) on the conductive metal layer (8), and in that the assembly step comprises a step of eliminating the sacrificial metal in the controlled zone (22). Procédé selon l'une des revendications précédentes, caractérisé en ce que ledit matériau est un métal.Method according to one of the preceding claims, characterized in that the said material is a metal. Procédé selon l'une des revendications précédentes, caractérisé en ce que l'étape de réalisation de la structure (1 ; 38) est effectuée en utilisant la technique DRIE.Method according to one of the preceding claims, characterized in that the step of producing the structure (1; 38) is carried out using the DRIE technique. Procédé selon l'une des revendications précédentes, caractérisé en ce que la structure (1 ; 38) est réalisée dans un matériau choisi parmi le groupe comprenant le silicium, le silicium oxydé, le diamant, le quartz, le verre ou le carbure de silicium, et de préférence le silicium ou le silicium oxydé.Method according to one of the preceding claims, characterized in that the structure (1; 38) is made of a material chosen from the group comprising silicon, oxidized silicon, diamond, quartz, glass or silicon carbide , and preferably silicon or oxidized silicon. Procédé selon l'une des revendications précédentes, caractérisé en ce que la cavité (2) est définie entièrement par la structure (1).Method according to one of the preceding claims, characterized in that the cavity (2) is entirely defined by the structure (1). Procédé selon l'une des revendications 1 à 8, caractérisé en ce que la cavité est définie partiellement par la structure (38) et partiellement par de la résine photosensible.Method according to one of claims 1 to 8, characterized in that the cavity is defined partially by the structure (38) and partially by photosensitive resin. Procédé selon la revendication 10, caractérisé en ce que l'étape de formation dudit élément (42) consiste à déposer ledit matériau dans une cavité définie par la structure (38) et par de la résine photosensible formée à l'extérieur de la structure (38), de sorte qu'après enlèvement de la résine photosensible un élément (42) soit formé sur une surface périphérique (41) de la structure (38).A method according to claim 10, characterized in that the step of forming said element (42) consists of depositing said material in a cavity defined by the structure (38) and by photosensitive resin formed outside the structure ( 38), so that after removing the photosensitive resin an element (42) is formed on a peripheral surface (41) of the structure (38). Procédé selon l'une des revendications précédentes, caractérisé en ce que la cavité (2) est définie par des parois (30) de la structure (1) d'épaisseur e et présente une hauteur h choisies de telle sorte que le rapport e/h est supérieur à 0.25.Method according to one of the preceding claims, characterized in that the cavity (2) is defined by walls (30) of the structure (1) of thickness e and has a height h chosen such that the ratio e / h is greater than 0.25. Procédé selon l'une des revendications précédentes, caractérisé en ce que la cavité (2) est définie par des parois (30) de la structure (1) et présente une hauteur h et, en section transversale, une largeur L séparant deux parois opposées (30) de la structure (1) choisies de telle sorte que le rapport h/L est compris entre 0.1 et 0.9.Method according to one of the preceding claims, characterized in that the cavity (2) is defined by walls (30) of the structure (1) and has a height h and, in cross section, a width L separating two opposite walls (30) of structure (1) chosen such that the h / L ratio is between 0.1 and 0.9. Procédé selon l'une des revendications précédentes, caractérisé en ce que le composant horloger est un balancier (31), ledit élément (3) étant placé à la périphérie de la structure (1) et servant à augmenter le rapport inertie/masse du balancier.Method according to one of the preceding claims, characterized in that the horological component is a balance (31), said element (3) being placed at the periphery of the structure (1) and serving to increase the inertia / mass ratio of the balance . Procédé selon l'une des revendications 1 à 13, caractérisé en ce que le composant horloger est une masse oscillante (36) pour remontage automatique, ledit élément (42) étant placé à la périphérie de la structure (38) et servant à augmenter le rapport balourd/masse de la masse oscillante.Method according to one of claims 1 to 13, characterized in that the horological component is an oscillating weight (36) for automatic winding, said element (42) being placed at the periphery of the structure (38) and serving to increase the unbalance / mass ratio of the oscillating mass.
EP19208589.2A 2019-11-12 2019-11-12 Method for manufacturing a timepiece component Active EP3822709B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008135817A2 (en) 2007-05-08 2008-11-13 Patek, Philippe Sa Timepiece component and method for making same
EP2502877A1 (en) * 2011-03-23 2012-09-26 Patek Philippe SA Genève Method for manufacturing a composite part, in particular for a clock movement
CH710544A2 (en) * 2014-12-19 2016-06-30 Swatch Group Res & Dev Ltd Process for producing a decorated element of a timepiece or jewelery, and element produced by the method.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008135817A2 (en) 2007-05-08 2008-11-13 Patek, Philippe Sa Timepiece component and method for making same
CH714952B1 (en) * 2007-05-08 2019-10-31 Patek Philippe Sa Geneve Watchmaking component, its method of manufacture and application of this method.
EP2502877A1 (en) * 2011-03-23 2012-09-26 Patek Philippe SA Genève Method for manufacturing a composite part, in particular for a clock movement
CH710544A2 (en) * 2014-12-19 2016-06-30 Swatch Group Res & Dev Ltd Process for producing a decorated element of a timepiece or jewelery, and element produced by the method.

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