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EP3196939A4 - Solid state imaging device and manufacturing method therefor - Google Patents

Solid state imaging device and manufacturing method therefor Download PDF

Info

Publication number
EP3196939A4
EP3196939A4 EP15821720.8A EP15821720A EP3196939A4 EP 3196939 A4 EP3196939 A4 EP 3196939A4 EP 15821720 A EP15821720 A EP 15821720A EP 3196939 A4 EP3196939 A4 EP 3196939A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
imaging device
solid state
state imaging
method therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15821720.8A
Other languages
German (de)
French (fr)
Other versions
EP3196939B1 (en
EP3196939A1 (en
Inventor
Hirokazu Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SE Tech Co Ltd
Original Assignee
SE Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SE Tech Co Ltd filed Critical SE Tech Co Ltd
Publication of EP3196939A1 publication Critical patent/EP3196939A1/en
Publication of EP3196939A4 publication Critical patent/EP3196939A4/en
Application granted granted Critical
Publication of EP3196939B1 publication Critical patent/EP3196939B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electromagnetism (AREA)
EP15821720.8A 2014-07-17 2015-07-12 Solid state imaging device and manufacturing method therefor Active EP3196939B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014147243A JP6051399B2 (en) 2014-07-17 2014-07-17 Solid-state imaging device and manufacturing method thereof
PCT/JP2015/069971 WO2016009972A1 (en) 2014-07-17 2015-07-12 Solid state imaging device and manufacturing method therefor

Publications (3)

Publication Number Publication Date
EP3196939A1 EP3196939A1 (en) 2017-07-26
EP3196939A4 true EP3196939A4 (en) 2018-06-20
EP3196939B1 EP3196939B1 (en) 2019-09-11

Family

ID=55078466

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15821720.8A Active EP3196939B1 (en) 2014-07-17 2015-07-12 Solid state imaging device and manufacturing method therefor

Country Status (5)

Country Link
US (1) US10157945B2 (en)
EP (1) EP3196939B1 (en)
JP (1) JP6051399B2 (en)
CN (1) CN106575657B (en)
WO (1) WO2016009972A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10986281B2 (en) 2015-07-31 2021-04-20 Sony Corporation Pinhole camera, electronic apparatus and manufacturing method
WO2017094537A1 (en) * 2015-12-03 2017-06-08 ソニー株式会社 Semiconductor chip and electronic device
JP2017175047A (en) 2016-03-25 2017-09-28 ソニー株式会社 Semiconductor device, solid-state imaging device, imaging device, and electronic apparatus
EP3471146B1 (en) * 2017-10-16 2020-09-09 ams AG Method for manufacturing an optical sensor and optical sensor
CN111725185A (en) * 2019-03-04 2020-09-29 苏州多感科技有限公司 Image sensor and preparation method thereof, image recognition method, and electronic device
US11063083B2 (en) * 2019-10-11 2021-07-13 Omnivision Technologies, Inc. Light-shielded cameras and methods of manufacture
JP2021190777A (en) 2020-05-27 2021-12-13 ソニーグループ株式会社 Photodetector
JP2024075806A (en) * 2021-03-30 2024-06-05 ソニーセミコンダクタソリューションズ株式会社 Imaging device
US12211310B2 (en) 2021-05-12 2025-01-28 Sony Group Corporation Imaging device
WO2023171264A1 (en) 2022-03-07 2023-09-14 ソニーグループ株式会社 Imaging device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080239120A1 (en) * 2007-03-30 2008-10-02 United Microelectronics Corp. Image-sensing module and manufacturing method thereof, and image capture apparatus

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669536A (en) * 1992-08-21 1994-03-11 Nippondenso Co Ltd Manufacture of light-position detection device
JPH0677526A (en) * 1992-08-25 1994-03-18 Nippondenso Co Ltd Plastic molded type photoelectric transducer and its manufacture
US5693967A (en) * 1995-08-10 1997-12-02 Lg Semicon Co., Ltd. Charge coupled device with microlens
JPH09236740A (en) 1996-02-29 1997-09-09 Minolta Co Ltd Photographing lens system
JPH1065132A (en) * 1996-08-14 1998-03-06 Sony Corp Semiconductor image pickup device
US6795120B2 (en) 1996-05-17 2004-09-21 Sony Corporation Solid-state imaging apparatus and camera using the same
JP3559453B2 (en) * 1998-06-29 2004-09-02 株式会社東芝 Light emitting element
US6534798B1 (en) * 1999-09-08 2003-03-18 California Institute Of Technology Surface plasmon enhanced light emitting diode and method of operation for the same
US6835963B2 (en) * 1999-12-22 2004-12-28 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
JP4004705B2 (en) * 2000-02-29 2007-11-07 松下電器産業株式会社 Imaging device and imaging device assembling method
JP4081985B2 (en) * 2001-03-02 2008-04-30 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
JP2004063751A (en) 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd Solid-state image sensing device and its manufacturing method
US20040094695A1 (en) * 2002-11-18 2004-05-20 Chen Wen Ching Digital CMOS sensor
US20040113048A1 (en) * 2002-12-16 2004-06-17 Tu Hsiu Wen Image sensor module
US6939456B2 (en) * 2003-02-04 2005-09-06 Kingpak Technology Inc. Miniaturized image sensor module
US20050275750A1 (en) * 2004-06-09 2005-12-15 Salman Akram Wafer-level packaged microelectronic imagers and processes for wafer-level packaging
WO2006095834A1 (en) * 2005-03-09 2006-09-14 Asahi Kasei Emd Corporation Optical device and optical device manufacturing method
WO2006109638A1 (en) * 2005-04-08 2006-10-19 Konica Minolta Opto, Inc. Solid-state image pickup element and method for manufacturing same
JP2007027602A (en) * 2005-07-21 2007-02-01 Matsushita Electric Ind Co Ltd Imaging apparatus
US20090008683A1 (en) * 2005-07-21 2009-01-08 Matshushita Electric Industrial Co., Ltd. Imaging apparatus
JP2007158751A (en) * 2005-12-06 2007-06-21 Hitachi Maxell Ltd Imaging apparatus and its manufacturing method
JP2007300164A (en) * 2006-04-27 2007-11-15 Fujifilm Corp Pinhole camera, and imaging element module for pinhole camera
JP2008124538A (en) 2006-11-08 2008-05-29 Matsushita Electric Works Ltd Pinhole camera
JP4966931B2 (en) * 2008-08-26 2012-07-04 シャープ株式会社 Electronic element wafer module and manufacturing method thereof, electronic element module and manufacturing method thereof, electronic information device
JP4764942B2 (en) * 2008-09-25 2011-09-07 シャープ株式会社 Optical element, optical element wafer, optical element wafer module, optical element module, optical element module manufacturing method, electronic element wafer module, electronic element module manufacturing method, electronic element module, and electronic information device
JP5165524B2 (en) 2008-10-10 2013-03-21 シャープ株式会社 Wafer scale lens, wafer scale module, and electronic device
JP5324890B2 (en) * 2008-11-11 2013-10-23 ラピスセミコンダクタ株式会社 Camera module and manufacturing method thereof
JP5518502B2 (en) * 2009-01-27 2014-06-11 シチズン電子株式会社 Manufacturing method of light emitting diode
US8629389B2 (en) * 2009-07-29 2014-01-14 Geoffrey Louis Barrows Low profile camera and vision sensor
US20110026141A1 (en) * 2009-07-29 2011-02-03 Geoffrey Louis Barrows Low Profile Camera and Vision Sensor
JP5356980B2 (en) * 2009-11-06 2013-12-04 シャープ株式会社 Electronic element module and manufacturing method thereof, electronic element wafer module and manufacturing method thereof, and electronic information device
WO2011102109A1 (en) * 2010-02-20 2011-08-25 株式会社ニコン Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method
JP2012018993A (en) * 2010-07-06 2012-01-26 Toshiba Corp Camera module and method of manufacturing the same
JP5682185B2 (en) * 2010-09-07 2015-03-11 ソニー株式会社 Semiconductor package, semiconductor package manufacturing method, and optical module
JP5909937B2 (en) * 2010-09-09 2016-04-27 日本電気硝子株式会社 Cover glass for semiconductor package and manufacturing method thereof
US8779540B2 (en) * 2011-01-26 2014-07-15 Maxim Integrated Products, Inc. Light sensor having transparent substrate with lens formed therein
JP2013084722A (en) 2011-10-07 2013-05-09 Toshiba Corp Solid-state imaging device and method of solid-state imaging device
JP5887993B2 (en) * 2012-02-27 2016-03-16 株式会社ニコン Method for manufacturing solid-state imaging device
WO2014002535A1 (en) * 2012-06-29 2014-01-03 シャープ株式会社 Semiconductor device manufacturing method
JP6076123B2 (en) * 2013-02-14 2017-02-08 オリンパス株式会社 Semiconductor substrate, imaging device, and imaging apparatus
US9431440B2 (en) * 2013-03-14 2016-08-30 Maxim Integrated Products, Inc. Optical sensor
WO2015025637A1 (en) * 2013-08-23 2015-02-26 シャープ株式会社 Photoelectric conversion device and method for manufacturing same
US9553126B2 (en) * 2014-05-05 2017-01-24 Omnivision Technologies, Inc. Wafer-level bonding method for camera fabrication

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080239120A1 (en) * 2007-03-30 2008-10-02 United Microelectronics Corp. Image-sensing module and manufacturing method thereof, and image capture apparatus

Also Published As

Publication number Publication date
US20170301713A1 (en) 2017-10-19
EP3196939B1 (en) 2019-09-11
JP6051399B2 (en) 2016-12-27
JP2016025164A (en) 2016-02-08
CN106575657A (en) 2017-04-19
EP3196939A1 (en) 2017-07-26
WO2016009972A1 (en) 2016-01-21
US10157945B2 (en) 2018-12-18
CN106575657B (en) 2020-04-14

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