EP3183811A1

EP3183811A1 - Micro-acoustic component having improved temperature compensation

Info

Publication number: EP3183811A1
Application number: EP15735958.9A
Authority: EP
Inventors: Werner Ruile; Philipp Michael JÄGER; Matthias Knapp
Original assignee: SnapTrack Inc
Current assignee: SnapTrack Inc
Priority date: 2014-08-21
Filing date: 2015-07-09
Publication date: 2017-06-28
Also published as: DE102014111993A1; WO2016026612A1; JP2017523645A; US10224897B2; US20170194932A1; JP6517841B2; CN106716826A; DE102014111993B4; CN106716826B

Abstract

For a component that operates by means of acoustic waves, the invention proposes the compensation of a negative temperature coefficient of the frequency by the provision of a compensation coating on the component, said coating comprising a material based on a chemical compound of at least two elements, the compound having a negative thermal expansion coefficient.

Description

description

Microacoustic device with improved

temperature compensation

The properties of acoustic wave devices, e.g. of SAW components (SAW = surface acoustic wave) or BAW components (BAW = bulk acoustic wave) usually show a dependence on the

Temperature. For example, the temperature coefficient of the center frequency (TCF) of SAW devices based on lithium tantalate (LT 42 ° red xy) is typically at e.g. -40 ppm / K. Different substrates show

different temperature coefficients.

The thermal expansion of these materials also results in a decrease in density p and in the relationship

v = V (c / p)

a direct influence on the wave velocity v.

This compensates for the increased by the thermal expansion run length for the shaft. However, the main factor influencing the frequency is the fact that the temperature also changes the stiffness c, which in most materials and thus in the piezoelectric

Material decreases with increasing temperature. Furthermore, the piezoelectric sensor and the permittivity of the substrate are temperature-dependent and thus contribute to the temperature coefficient. Also, the stiffness change of

Electrode materials do not remain without influence on the TCF.

The problem arises from the fact that manufacturing tolerances in working with acoustic waves components become closer to for example, the bandwidths of filters around the

to increase temperature-dependent fluctuations. At tight

adjacent frequency bands makes this more difficult to select or results in a higher proportion of components that no longer meet the required specifications. Other specifications can no longer be met without compensating the TCF.

In US Pat. No. 7,589,452 B2, an acoustic wave device is proposed, which has various types

Measures for lowering the temperature response (TC compensation) in particular the resonance frequency combined. The component has on the substrate top electrically conductive construction ^¬ element structures and on the bottom one

Compensating on, which is mechanically firmly connected to the substrate so that a mechanical strain arises, or builds up when the temperature changes.

As a further measure, a Si0 ₂ layer is arranged over the component structures, which has a positive

Temperature coefficient of their thermoelastic properties, the negative temperature coefficient of most substrate materials such. LT or LN

(Lithium niobate) compensated.

The disadvantage of this solution is that the required

Reflectivity of the electrodes is obtained only with heavy electrodes. This is unsatisfactory especially for SAW devices and insufficient for some applications.

A disadvantage of the temperature compensation with S1O ₂ is further that its temperature compensation property is limited and by the use of S1O ₂ a loss of electromechanical coupling and bandwidth, an increased Damping and the occurrence of unwanted spurious modes must be taken into account. This limits the effectively achievable TC compensation.

Other layers with a positive temperature coefficient such as GeÜ ₂ and fluorine- or boron-doped S1O ₂ have already been used to compensate for the temperature-dependent

Properties proposed.

Object of the present invention is to provide new possibilities or new materials for the compensation of the temperature coefficient, with both the compensation is improved, and the associated disadvantages are reduced.

This object is achieved by a device according to the features of claim 1. advantageous

Embodiments of the invention are described in the dependent claims.

The invention is based on the recognition that among the materials with a negative coefficient of thermal expansion many materials can be found which have a positive temperature coefficient of their thermomechanical properties. Such materials can be used to compensate for a negative temperature coefficient of the thermomechanical properties, as is usually the case with piezoelectric materials.

It is proposed on a working with acoustic waves device, a compensation layer

Apply a dielectric material on the base a chemical compound comprising at least two elements, which has a negative thermal expansion ^¬ coefficient. According to one embodiment, the chemical compound is an inorganic transition metal compound or a

Rare earth compound. But compounds of other substance classes are also suitable. Such a device comprises at least one layer of a piezoelectric material having a pair of electrodes for exciting acoustic waves in the piezoelectric material. The compensation layer is arranged on this device so that in the compensation layer

at least part of the energy of the acoustic wave

located. This requires relative proximity to the

piezoelectric layer in which the acoustic wave is primarily generated. Materials with negative coefficients of thermal expansion, e.g. from the class dielectric

inorganic transition metal and rare earth compounds are surprisingly show a high positive temperature coefficient of their modulus of elasticity, so an increase in stiffness with increasing temperature, which is greater than the best known materials such as

For example, the previously used for this purpose Si02- With this high stiffness change or the associated positive temperature coefficient of the modulus of elasticity succeeds to a more effective compensation layer

realize. Thus, it is also possible to completely compensate for temperature coefficients of the frequency and even more so with a compensation layer of a smaller thickness than the previously known materials. At the same time, the problems of the previously known compensation layers are reduced with a thinner compensation layer. In particular, the adverse effects such as the reduction of

piezoelectric coupling and with the compensation layer to be accepted acoustic attenuation lower.

Another advantage of the class of compounds found is that the compounds are typically known in conventional semiconductor art

Apply deposition in a controlled manner. Thus, they are also technically well suited to work on a working with acoustic waves device

to get upset.

In one embodiment of the invention, the compensation layer is directly on the layer of the piezoelectric

Applied material. Electrodes and compensation layer may be disposed on the same side of the piezoelectric layer. It is also possible, however, the

Compensation layer below the piezoelectric layer and to arrange the electrodes above the piezoelectric layer. Furthermore, it is possible to use the electrodes between the piezoelectric layer and the compensation layer

provided. Another possible variant is to apply the electrodes to the compensation layer, which in turn is deposited on the piezoelectric layer. In a preferred embodiment of the invention, the compensation layer comprises as a rare earth compound with

negative thermal expansion coefficient a glass based on scandium trifluoride SCF ₃ . This material is sufficiently hard, mechanically stable and can be deposited very well.

A particularly high positive temperature coefficient of the modulus of elasticity can be achieved with an yttrium-doped one

Scandium trifluoride of the formula SC (i- _X ) Y _x F ₃ , wherein the expressed by the coefficient x yttrium content -S 0,25 is set, so that the relationship 0 <x -S 0,25 applies.

The yttrium content of this compound is limited by the solubility of yttrium trifluoride in the scandium trifluoride, and theoretically may be higher if successful

produce appropriate materials.

Particularly advantageous and advantageous properties are exhibited by an yttrium-doped scandium trifluoride having an yttrium content of about 20%, in which therefore x = 0.2. This material shows in pure form a temperature coefficient of the modulus of about 1500 ppm / K. This temperature coefficient is more than five times as high as that of undoped S1O ₂ , which is used in today's components as a compensation layer. In comparison to the previously proposed but not yet used fluorine doped S1O ₂ , the temperature coefficient of the proposed yttrium-doped scandium trifluoride is more than twice as high. For a compensation layer produced therefrom, this means that the same compensation effect is achieved with a layer thickness that is only half as high as was previously the case with known compensation materials. According to a preferred embodiment, the compensation layer has a temperature coefficient of the thermoelastic properties of> 700 ppm / K. These values are achieved by different of the mentioned materials with negative coefficients of thermal expansion.

With the proposed compounds can also

Compensation layers with a temperature coefficient of the thermoelastic properties of> 1000 ppm / K can be obtained.

The said material may be present in solid pure form, in doped form, as a mixed compound together with other oxides, halides or other crystalline compounds or it may be embedded in solid form in a crystalline matrix or preferably just in a glass. It is possible that a compensation layer which does not receive the negative expansion coefficient material in a pure form achieves a lower compensation effect than a compensation layer composed exclusively of said material. But it is also possible that a layered mixture or a layered doping even increases the desired effect. Mixtures with other substances or an embedding in a matrix may be advantageous in cases where the modification of the

Material is not directly suitable for layer deposition, or if layers so produced are mechanically and structurally unsuitable for remaining on the device.

The term layer formation refers to a suitable for a device layer of sufficient hardness and a suitable physical consistency. In one embodiment, the component is designed as a SAW component, that is to say as a component working with surface acoustic waves. It has at least one interdigital transducer on the piezoelectric layer. On the piezoelectric layer and over the interdigital transducer a compensation layer is deposited, the

Scandium trifluoride SCF ₃ , either doped (eg with YF ₃ ), as mixed crystal with other oxides or halides or embedded in a crystalline matrix or in a glass. The compensation layer with respect to the selection of the compensating material and with respect to its proportion in the compensation layer formed so that the temperature ^¬ coefficient of the center frequency, that is, the operative for the SAW device temperature-dependent value is already at a relative layer thickness of 5 - fully 15%

is compensated. The relative layer thickness refers to the wavelength of a propagating ^¬ enabled in this material the acoustic wave, and outputs the layer thickness in

Percent of the wavelength.

There are also problems that require overcompensation of the TK, so that a higher layer thickness of the

Compensation layer can be adjusted. The relative layer thickness refers to the ratio of

Layer thickness to the wavelength of the material propagation ^¬ enabled acoustic wave at the center frequency of the device. The layer thickness of such inventive

Compensation layer is lower than the conventional one

Compensation layers. Nevertheless, a complete

Compensation of the temperature coefficient of the center frequency can be achieved. The component can also be designed as a BAW component, wherein both possible embodiments are possible as SMR (solidly mounted resonator) or on the basis of resonators arranged via membranes. Next, the device as GBAW device (working with guided volume waves

Component) may be formed.

The devices may comprise an electrode material comprising one or more of known metals and alloys, semiconductors, and conductive borides, nitrides, carbides and mixed compounds.

The components according to the invention can be provided or designed for a very wide variety of applications. For example, it is possible to use the components according to the invention as a resonator, DMS filter or ladder type filter.

In a further embodiment, the compensation layer comprises a material of oxide network formers. These special network formers show a negative coefficient of thermal expansion, which is usually associated with an abnormal pressure behavior ("pressure softening") .These compounds also show an abnormal thermo-mechanical behavior, which also has a positive thermal expansion coefficient

Temperature coefficient of stiffness c and the modulus of elasticity is associated.

Known for their particularly strong abnormal thermomechanical behavior and their positive temperature coefficient of stiffness c and the modulus of elasticity are in particular the iso ^¬ structural tungstates ZrW2Ü8 and HfW20s. For ZrW2Ü8 its abnormal thermomechanical behavior of the elastic constants has already been detected. Further examples of oxidic network formers with negative coefficients of thermal expansion are Z rMo20s, HfMo20s, S CW3O12, AlW3O12, Zr (W0 ₄ ) (P0 ₄ ) 2.

Also from other classes of substances materials with a negative coefficient of thermal expansion are known, such as many zeolites or B2O ₃ . Non-oxidic network formers or glass formers, the

are fluorine-based compounds S cF ₃ -BaF 2 ^- YF ₃ , S cF ₃ -BaF 2 ^- Z nF 2, S CF ₃ - BaF ₂ - InF ₃ , ScF ₃ -MgF ₂ , YbF ₃ - SF ₃ , LuF ₃ -ScF ₃ , Zn (CN) ₂ and BeF ₂ and some cyanides such as Zn (CN) 2 - All of these

Compounds exhibit negative temperature coefficients of thermal expansion and are therefore in principle also suitable for use in compensation layers on components working with acoustic waves. In contrast, typical glass formers such as S 1 O 2, GeO 2, B2O ₃ , etc., exhibit a PTE (positive thermal expansion) behavior, albeit one

low.

The invention is further illustrated by execution ^¬ examples and the associated figures. The figures are only schematically and serve only for a better understanding of the invention. The figures are therefore in particular not true to scale, as individual parts

can be shown enlarged or reduced.

Accordingly, the figures neither relative nor absolute dimensions are shown.

Figures 1 and 2 show in schematic cross section in each case a SAW device with compensation layer in

different arrangement, FIG. 3 shows a BAW component with compensation layer,

FIG. 4 shows a GBAW component with compensation layer,

FIG. 5 shows a further BAW component, FIG. 6 shows a SAW component,

FIGS. 7a and 7b each show a SAW component with a structured compensation layer,

Figures 8a to 8c show SAW or GBAW devices comprising one or more additional dielectric layers DS

exhibit,

FIG. 9 shows the course of the modulus of elasticity versus temperature in the system SC (i- _X ) Y _x F3 with different yttrium contents x. FIG. 1 shows the simplest embodiment of a SAW component provided with a compensation layer KS. On a substrate which has at least one thin piezoelectric

Layer comprises, is a first electrode layer ELI

arranged, which are formed in the form of comb-like nested comb electrodes. In particular, the substrate SU consists of lithium tantalate with a cut suitable for SAW generation and propagation. For example, LT42 has a temperature coefficient of elastic properties in the x-direction of about -40 ppm. To compensate for this, above the electrode layer ELI is the

Compensation layer KS arranged in a suitable thickness, which is sized according to the desired degree of compensation in thickness. FIG. 2 shows a similar component in which the

Compensation layer KS, however, on a surface of the

Substrate is applied, which is opposite to the provided with the electrode layer surface. If the thickness of the piezoelectric layer is chosen to be suitably thin, a good compensation of the temperature coefficient of the frequency can also be achieved with this arrangement. Figure 3 shows a working with bulk acoustic waves

Component (BAW component) in which a compensation layer KS is applied directly to a piezoelectric substrate SU. On this exposed surface of the substrate SU is a first electrode layer ELI and on the exposed surface of the compensation layer KS is a second

Electrode layer EL2 arranged. The thickness of Kompen ^¬ sationsschicht KS and substrate SU together determine the wavelength of the BAW device, so that at a given wavelength, a thicker compensation layer KS has a thinner substrate SU result to set the same resonance frequency in the BAW component.

Figure 4 shows another type of working with acoustic waves components, namely with guided

acoustic waves working device, a so-called

GBAW device. In this case, on a piezoelectric substrate SU again electrodes in a particular

structured first electrode layer ELI arranged.

In addition, the compensation layer KS is arranged in a desired layer thickness.

The completion of the device forms an over the

Compensation layer KS applied cladding layer ML, the has a higher velocity v (ML) of the acoustic wave than the compensation layer v (KS):

v (ML)> v (KS).

The speed, in turn, can be adjusted accordingly

v = V (c / p)

adjust the density p or the stiffness c of the materials used accordingly. This ensures that the guidance of the acoustic wave predominantly takes place within the substrate and the compensation layer. Moreover, the thickness of the cladding layer is as high dimensioned such that at the can occur virtually no acoustic movement or vibration of the piezoelectric layer or of the side facing away from the compensation ^¬ layer surface of the cladding layer. FIG. 5 shows a BAW component with a first one

Electrode layer ELI, a piezoelectric layer SU and a second electrode layer EL2, in which the

Compensation layer KS outside on one of the two

Electrode layers ELI, EL 2 is applied.

Of course there is also the possibility of the

Compensation layer KS somewhere between the first

To arrange electrode layer ELI and the second electrode layer EL2. As another possibility several can

Compensation layers KS of different thickness can be used. BAW components with one or more such

Compensating layers can be mounted as SMR (solidly mounted resonator) directly on the substrate or in

Membrane design be formed.

Figure 6 shows another GBAW device, in which the

Compensation layer between the piezoelectric substrate and the first electrode layer ELI is arranged. Above As is shown in FIG. 6, the electrode layer ELI can also be provided with a cladding layer ML.

Figures 7a and 7b show possibilities, such as the acoustic properties of a with a compensation layer KS

provided SAW device can be further improved. Due to the low acoustic impedance difference between electrodes and compensation layer material

Reduced reflectivity of the electrodes is restored by an additional reflection created by structuring the compensation layer KS. For this purpose, depressions (FIG. 7a) or thickenings (FIG. 7b) are introduced parallel to the electrode fingers into the surface of the

Compensation layer KS introduced, forming the reflection points for the acoustic wave and which are arranged in the same grid as the electrode fingers and therefore the

Increase the reflectivity of the electrode fingers.

In connection with the invention are also additional

dielectric layers DS between piezocrystal /

Piezo layer and electrodes or above the compensation ^¬ layer possible. 8a-8c show such example ^¬ liable versions. Thus, in FIG. 8 a, a dielectric layer DS is present between the first electrode layer ELI and

Compensation layer KS arranged. FIG. 8b shows a dielectric layer DS over the cladding layer ML

arranged. FIG. 8c shows an embodiment which simultaneously has two dielectric layers DS1 and DS2, as shown individually already in FIGS. 8a and 8b. FIG. 9 shows the profile of the modulus of elasticity as a function of the temperature in the system SC ₍ i- _X ) Y _x F 3 for various parameters x corresponding to an yttrium content of between 0 and 25%. It turns out that for an yttrium content of 20% (x = 0.2) the strongest increase in the modulus of elasticity in the temperature range of 300-500 K, so that this material has the highest positive temperature coefficient of the modulus of elasticity and is best suited for use in a compensation layer in an acoustic wave device. Although the pure scandium trifluoride shows a negative thermal expansion coefficient, but only a zero temperature coefficient of the modulus of elasticity.

From the graphic, or the underlying

For the mixed scandium-yttrium trifluoride with an yttrium content between 20 and 25 ~ 6, a temperature coefficient of the center frequency of about 1500 ppm / K is obtained. Fluorine-doped S1O _2, however, shows a coefficient <700 ppm / K during undoped S1O ₂ ^¬ a temperature coefficient of <300 ppm / K. Compared to today common compensation layers of undoped S1O _2, this results in an improvement of the compensation by a factor of 5.

The material properties in particular of the mixed

Scandium-yttrium trifluorides, such as stiffness, are in a similar range to the previously used Si0 ₂ layers. At slightly higher density than the S1O ₂ is expected that the remaining component ^¬ properties are not adversely affected by the new compensation layer. Because of the better

Compensation only a lower layer thickness of

Compensation layer is required, one can expect a significant improvement in the acoustic properties. The invention is not limited to the embodiments described in more detail in the exemplary embodiments, the only exemplary embodiments of acoustic waves

specify working components with a compensation layer. In principle, components are conceivable which have more than one compensation layer, or even construction ^¬ elements, the other means for reducing the

Have temperature coefficient of the center frequency, in particular stress layers.

Claims

claims

, Acoustic wave device,

with a layer (SU) of a piezoelectric material

with at least one pair of electrodes (EL, EL1, EL2) for exciting acoustic waves in the

piezoelectric material

with a compensation layer (KS), which is arranged in such a way that in the

Compensation layer is at least part of the energy of the acoustic wave,

wherein the compensation layer comprises a dielectric material based on a chemical compound of at least two elements having a negative thermal expansion coefficient.

Component according to Claim 1,

in which the compensation layer (KS) is applied directly to the layer of the piezoelectric material, wherein the electrodes (EL, ELI, EL2) on the piezoelectric layer (SU), on the

Compensation layer (KS) or between these two layers are arranged.

3. Component according to claim 1 or 2,

in which the compensation layer (KS) as

Rare earth compound scandium trifluoride SCF ₃ .

4. Component according to claim 3,

in which the compensation layer (KS) as

Rare Earth Compound Yttrium-doped SCF ₃ of the formula SC ₍ i- _X ) Y _x F ₃ , wherein the proportion of yttrium expressed by the coefficient x is defined by the relationship 0 <x -S 0.25.

Component according to Claim 4,

in which the compensation layer (KS) as

Rare earth compound has an yttrium-doped S CF _{3 of} the formula Sc ₍ ix) Y _x F ₃ , where x = 0.2.

Component according to one of claims 3 - 5,

wherein the S CF ₃ comprehensive compensation layer (KS) is a glass.

Component according to one of claims 1 - 6,

in which the compensation layer (KS) a

Network creator includes.

Component according to one of claims 1 - 7,

at the compensation layer (KS) a positive temperature coefficient of the thermoelastic

Properties greater than 700 ppm / K has.

Component according to one of claims 1 - 8,

- designed as a SAW component,

with at least one interdigital transducer on or above the piezoelectric layer (SU)

- With a deposited over the piezoelectric layer and the interdigital transducer

Compensating layer (KS) containing S CF ₃ in pure form, doped, as a mixed crystal with other oxides or halides, or embedded in a crystalline matrix or a glass - where the temperature coefficient of the

Center frequency with a layer thickness of 5-20% based on the wavelength at the center frequency of the device is fully compensated.

10. component as claim 9,

but as a BAW device without interdigital transducer but with two electrode layers (EL1, EL2) is formed.

11. The component according to claim 1, 2 or 8,

in which the compensation layer (KS) comprises as material with the negative coefficient of thermal expansion one of the following compounds: ZrW ₂ 0 ₈ , ZrMo ₂ 0 ₈ , HfW ₂ 0 ₈ HfMo ₂ 0 ₈ , ScW ₃ 0i ₂ ,

AlW ₃ 0i ₂ , Zr (WO ₄ ) (PO ₄ ) 2, ScF ₃ -BaF ₂ -YF ₃ , ScF ₃ -BaF ₂ -ZnF ₂ , ScF ₃ -BaF ₂ -InF ₃ , ScF ₃ -MgF ₂ , YbF ₃ -ScF ₃ , LuF ₃ -ScF ₃ ,

Zn (CN) ₂ , BeF ₂ , B ₂ O ₃ and zeolite.