EP2664037A1 - Compact single frequency laser - Google Patents
Compact single frequency laserInfo
- Publication number
- EP2664037A1 EP2664037A1 EP11855776.8A EP11855776A EP2664037A1 EP 2664037 A1 EP2664037 A1 EP 2664037A1 EP 11855776 A EP11855776 A EP 11855776A EP 2664037 A1 EP2664037 A1 EP 2664037A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- fiber
- housing
- frequency
- laser
- downstream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
- H01S5/02446—Cooling being separate from the laser chip cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0064—Anti-reflection components, e.g. optical isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
Definitions
- the present disclosure relates to a light emitti g device provided with a laser diode and delivery fiber.
- Laser diode sources are well known in the ait and widely use for a variety of applications.
- stabilized temperature, mechanical stability and compactness deserve close attention.
- the former two requirements are instrumental in a stabilized pump output which is of paramount importance in many laser systems because any deviation from the desired parameters causes a wavelength change. This is unacceptable in many configurations including single frequency laser systems which have an external resonant cavity.
- the US Patent 5,699,377 (“ '377”) is just an example illustrating certain structural aspects that still need to be addressed.
- the '377 patent discloses a narrow linewidth laser source having a laser chip with the configuration known as a standard Butterfly diode mount or package.
- the configuration as disclosed in the patent includes, among others, a laser diode and fiber clip mounted on respective separate thermoelectric coolers ("TEC").
- TEC thermoelectric coolers
- the fiber chip and delivery fiber are located on respective opposite input and output sides of the laser diode.
- the compactness of the disclosed structure may not be optimal.
- the laser diode module is a delicate device exposed to both mechanical and optical loads.
- the former is a result of environment characterized by mechanical stresses. For example, even a slight human intervention in the vicinity of the output fiber creates sufficient mechanical loads capable of destabilizing the desired wavelength.
- Optical loads are typically associated with backlight radiation originated downstream from the laser module and even along the downstream stretch of the delivery or output fiber. While propagating along an optical circuitry, the light tends to impinge on a variety of formations, both desired and undesired, and backreflect. Furthermore, it is not unusual that due to various causes parasitic wavelengths are generated while the light propagates along the circuitry. When any light backreflected, tit may and often does end up in the laser diode cavity which may detrimentally affect the stabilization of the desired wavelength.
- the source includes a housing enclosing a laser diode which is operative to generate a stabilized single frequency output and partially a delivery fiber guiding the generated light outside the housing.
- the delivery fiber is provided with a wavelength- selective element also enclosed in the housing and defining an external resonant cavity between itself and the downstream faucet of the laser diode.
- the wavelength selective element may be selected from a fiber Bi-ag giating or volume grating.
- the laser diode and wavelength selective element are supported by respective spaced apart TECs. The use of separate TECs allows the wavelength selective element to be positioned in a close proximity to the diode which creates a reliable stress-resistant structure within the housing. Furthermore, closely positioned diode and selective element render the source to be compact.
- a further aspect of the disclosed structure includes its enhanced optical and mechanical resistance to stresses originated outside the housing. This is realized by having an optical isolator located downstream from wavelength- selective element. Depending on the configuration of the wavelength, the isolator may be configured as either a fiber isolator or a volume configuration. The isolator prevents light from reentering the resonant cavity. Otherwise, since the disclosed source may be part of a high power fiber laser system, the powerful amplified light may reenter the cavity and destroy the laser source. The isolator provides not only for the attenuation of undesired backreflected optical f equencies, but also for dumping mechanical stresses occurred outside the housing of the device.
- FIG. 1 is a side elevational view of the disclosed laser source.
- FIG. 2 A - 2B are respective optical diagrammatic views of the disclosed illustrating a single-grating structure and a two-grating structure.
- FIG. 3 is a diagrammatic view of a volume Bragg Grating ("VBG”)
- FIG. 1 illustrates the disclosed laser source 10 configured with a housing 12 which encloses a ceramic thermo-conducting plate 14 that provides for the mechanical rigidity of the source.
- Two separate TECs 16 and 18, respectively, are in thermo contact with a laser diode chip 20, which may be of a standard butterfly configuration, and a wavelength selective element or frequency discriminator 22.
- the use of two separate TECs 16 and 18 having respective separate control circuits 17 and 19, respectively, which may also be mounted witliin housing 12 enhances, on one hand, the stability of the desired central wavelength.
- the two-TEC structure also enliances the flexibility of a tuning process when a different central wavelength is needed.
- the laser diode chip 20 is preferably configured as a powerful laser with an output of up to kW levels.
- the laser diode is configured with two opposite upstream and downstream faucets 30 and 32, respectively, covered by respective anti -reflective coatings (not shown) and defining an internal resonant cavity which generate a narrow band diode chip radiation through its downstream faucet 32.
- the use of the powerful laser diode chip 20 is highly beneficial to the overall fiber laser system for the following reasons. First, the fiber laser system may radiate a high power output without the necessity of using an optical amplifier. Second, the output light of the fiber laser system is highly coherent due to the inverse relationship between the power and linewidth hv
- the device 10 further includes a ferrule 24 mounted to a foundation 15 within the housing and configured to receive the upstream end region 34 of fiber 26.
- the fiber 26 is preferably, but not necessarily, a polarization maintaining (PM) fiber which provides for the desired polarization extinction ratio (“PER”) of the output light.
- PM polarization maintaining
- the control circuit 17 driving laser diode chip 20 may have a current drive circuit and current sensor receiving the output of the drive circuit.
- the sensor is coupled to a temperature correction circuit operative to process the measure current and compare it to a reference value.
- the output from the temperature correction circuit is coupled to TEC 1 regulating chip 20 so as to generate the laser diode or chip output.
- frequency discriminator 22 may be a fiber Bragg grating ("FBG") mounted within the housing at a distance L from the upstream faucet of laser diode 20 so as to define the upstream end of the external cavity with upstream faucet 30 of laser 20.
- the external cavity thus, refers to a portion of an optical cavity which is external to the internal laser cavity.
- the discriminator 20 is tunable, i.e., the element in which the particular wavelength of reflected output light may be adjusted to even further narrow the laser chip radiation, as known to one of ordinary skills.
- the range of tuning is achieved by applying thermally-induced stress generated by TEC 18.
- Other tuning techniques may include acoustically induced stress or simply mechanical one.
- the length L is selected so as to minimize
- the modes should be spaced at a distance Af of about 4GHz from one another. Based on the above, the length L should not exceed about 2.5 sm.
- FIG. 2B illustrates the configuration of laser light source 10 with two or more FBGs 22 providing even more stable generation of the desired frequency.
- FIG. 3 illustrates an alternative configuration of frequency discriminator 22 structured as a volume holographic Bragg grating ("VBG"), which consists of a periodic phase or absorption perturbation throughout the entire volume of the element.
- VBG 22 is a diffractive element operative to diffract only one given wavelength.
- the device 10 further includes a pigtailed optical isolator 28 configured to minimize backreflected light propagation into the resonator and improve mechanical resistance of the in-house structure to outside stress.
- frequency discriminator 22 is configured as an FBG
- device 10 is configured with a fiber optical isolator supporting fiber 26 outside the housing.
- the isolator 28 may be configured as a polarization mamtaining fiber optic isolator, which achieves low insertion loss, high return loss and high isolation.
- isolator 28 can be configured as Faraday optical isolator.
- isolator 28 is installed within housing 12 upstream from the downstream end of fiber 26.
- the VHG has a configuration comprising a periodic or aperiodic effective index of refraction and, for example, may have the fringe pattern stored in a holographic material.
- the fringe pattern in turn, xomprises fringes of alternating inedices of refraction, or a layered stack of material with alternating indices of refraction.
- the fiber 26 is encapsulated in silicone which helps achieve the desired coupling of the fiber and discriminator 22 with the support, efficient dumping of mechanical stresses and reliable thermo contact for stabilizing the temperature of frequency discriminator 22.
- the use of silicone reduces the degassing effect so detrimental to the work of the chip.
- gain block 40 of system 10 may have a configuration of fiber amplifier including a multimode (MM) fiber 44 fusion spliced between single mode (SM) fibers 42.
- the MM fiber 44 supports multiple modes at a wavelength different from the lasing wavelength but is configured to guide substantially only a fundamental mode at the lasing wavelength.
- the cores 46 and 48 of respective MM active and SM passive fibers 44 and 42 are configured so that the fundamental mode spot size of MM fiber 44 substantially matches that of SM fiber 42.
- Such a configuration amounts to efficient coupling of the fundamental modes of the respective fibers at the splice, which minimizes the possibility of high mode excitation.
- the illustrated schematic may additionally have one or more fiber amplifiers.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Claims
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2011/021086 WO2012096664A1 (en) | 2011-01-13 | 2011-01-13 | Compact single frequency laser |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2664037A1 true EP2664037A1 (en) | 2013-11-20 |
EP2664037A4 EP2664037A4 (en) | 2017-11-22 |
Family
ID=46507366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11855776.8A Withdrawn EP2664037A4 (en) | 2011-01-13 | 2011-01-13 | Compact single frequency laser |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP2664037A4 (en) |
WO (1) | WO2012096664A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107367791A (en) * | 2017-08-31 | 2017-11-21 | 武汉光迅科技股份有限公司 | A kind of multichannel EML integrated packages and its AWG preparation methods |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10193306B2 (en) * | 2016-08-22 | 2019-01-29 | Morton Photonics Incorporated | Ultra-low noise, highly stable single-mode operation, high power, Bragg grating based semiconductor laser |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2541095B2 (en) * | 1993-05-31 | 1996-10-09 | 日本電気株式会社 | Laser wavelength stabilization method |
JP2871623B2 (en) * | 1996-07-11 | 1999-03-17 | 日本電気株式会社 | Semiconductor laser device |
US20030072336A1 (en) * | 2001-09-13 | 2003-04-17 | Spectra-Physics Lasers, Inc. | Miniaturized internal laser stabilizing apparatus with inline output for fiber optic applications |
US7103075B2 (en) * | 2003-06-18 | 2006-09-05 | Shimadzu Corporation | Solid laser apparatus |
JP4444213B2 (en) * | 2003-09-26 | 2010-03-31 | 古河電気工業株式会社 | Semiconductor laser device |
EP1926188A1 (en) * | 2006-11-27 | 2008-05-28 | JDS Uniphase Corporation | Power stabilization of laser harmonic frequency conversion |
KR100927594B1 (en) * | 2006-12-05 | 2009-11-23 | 한국전자통신연구원 | Plate-type optical waveguide (PLC) element, wavelength variable light source including the element, and WDM-POON using the light source |
US7606273B2 (en) * | 2007-10-15 | 2009-10-20 | Pavilion Integration Corporation | Wavelength and intensity stabilized laser diode and application of same to pumping solid-state lasers |
US7912099B2 (en) * | 2008-10-21 | 2011-03-22 | Gapontsev Valentin P | Method and apparatus for preventing distortion of powerful fiber-laser systems by backreflected signals |
-
2011
- 2011-01-13 WO PCT/US2011/021086 patent/WO2012096664A1/en active Application Filing
- 2011-01-13 EP EP11855776.8A patent/EP2664037A4/en not_active Withdrawn
Non-Patent Citations (1)
Title |
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See references of WO2012096664A1 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107367791A (en) * | 2017-08-31 | 2017-11-21 | 武汉光迅科技股份有限公司 | A kind of multichannel EML integrated packages and its AWG preparation methods |
Also Published As
Publication number | Publication date |
---|---|
WO2012096664A1 (en) | 2012-07-19 |
WO2012096664A8 (en) | 2014-08-21 |
EP2664037A4 (en) | 2017-11-22 |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: AVDOKHIN, ALEXEY Inventor name: BARANNIKOV, YURI, A. |
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Ipc: H01S 3/094 20060101ALN20171016BHEP Ipc: H01S 3/067 20060101ALN20171016BHEP Ipc: H01S 5/024 20060101AFI20171016BHEP Ipc: H01S 5/14 20060101ALI20171016BHEP Ipc: H01S 3/0941 20060101ALN20171016BHEP Ipc: H01S 5/00 20060101ALN20171016BHEP Ipc: H01S 5/022 20060101ALN20171016BHEP Ipc: H01S 5/068 20060101ALN20171016BHEP |
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