EP2351872A4 - Treatment method using plasma - Google Patents

Treatment method using plasma Download PDF

Info

Publication number: EP2351872A4
Authority: EP; European Patent Office
Prior art keywords: plasma; treatment method; treatment
Prior art date: 2008-10-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP09817921.1A

Other languages

German (de)

French (fr)

Other versions

EP2351872A1 (en

EP2351872B1 (en

Inventor

Hidekazu Miyahara

Akitoshi Okino

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

MIYAHARA, HIDEKAZU

Okino Akitoshi

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-10-03

Filing date

2009-10-05

Publication date

2017-11-01

2009-10-05 Application filed by Individual filed Critical Individual

2011-08-03 Publication of EP2351872A1 publication Critical patent/EP2351872A1/en

2017-11-01 Publication of EP2351872A4 publication Critical patent/EP2351872A4/en

2021-06-09 Application granted granted Critical

2021-06-09 Publication of EP2351872B1 publication Critical patent/EP2351872B1/en

Status Active legal-status Critical Current

2029-10-05 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Thermal Sciences (AREA)
Ceramic Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Inorganic Chemistry (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Oxygen, Ozone, And Oxides In General (AREA)
Chemical Vapour Deposition (AREA)
Inorganic Compounds Of Heavy Metals (AREA)
Silicon Compounds (AREA)
Physical Or Chemical Processes And Apparatus (AREA)
Other Surface Treatments For Metallic Materials (AREA)
Manufacturing Of Printed Circuit Boards (AREA)
Manufacturing Of Printed Wiring (AREA)
Formation Of Insulating Films (AREA)
Plasma Technology (AREA)

EP09817921.1A 2008-10-03 2009-10-05 Treatment method using plasma Active EP2351872B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2008258678		2008-10-03
PCT/JP2009/067341 WO2010038894A1 (en)	2008-10-03	2009-10-05	Treatment method using plasma

Publications (3)

Publication Number	Publication Date
EP2351872A1 EP2351872A1 (en)	2011-08-03
EP2351872A4 true EP2351872A4 (en)	2017-11-01
EP2351872B1 EP2351872B1 (en)	2021-06-09

Family

ID=42073646

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP09817921.1A Active EP2351872B1 (en)	2008-10-03	2009-10-05	Treatment method using plasma

Country Status (4)

Country	Link
US (1)	US20110236593A1 (en)
EP (1)	EP2351872B1 (en)
JP (1)	JP5920802B2 (en)
WO (1)	WO2010038894A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9659769B1 (en)	2004-10-22	2017-05-23	Novellus Systems, Inc.	Tensile dielectric films using UV curing
US8980769B1 (en)	2005-04-26	2015-03-17	Novellus Systems, Inc.	Multi-station sequential curing of dielectric films
US8889233B1 (en)	2005-04-26	2014-11-18	Novellus Systems, Inc.	Method for reducing stress in porous dielectric films
US10037905B2 (en)	2009-11-12	2018-07-31	Novellus Systems, Inc.	UV and reducing treatment for K recovery and surface clean in semiconductor processing
US9050623B1 (en)	2008-09-12	2015-06-09	Novellus Systems, Inc.	Progressive UV cure
JP5510437B2 (en) *	2011-12-07	2014-06-04	パナソニック株式会社	Plasma processing apparatus and plasma processing method
JP5946085B2 (en) *	2012-03-15	2016-07-05	株式会社アルバック	Method and apparatus for hardening metal oxide film
CN113930707B (en)	2014-10-21	2024-04-16	奥雷尔科技有限公司	Method and system for forming patterned metal film on substrate
US10369664B2 (en) *	2016-09-23	2019-08-06	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of semiconductor device
US9847221B1 (en)	2016-09-29	2017-12-19	Lam Research Corporation	Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing

Citations (3)

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Publication number	Priority date	Publication date	Assignee	Title
US20020190251A1 (en) *	2001-03-13	2002-12-19	Toyoki Kunitake	Thin film materials of amorphous metal oxides
EP1323846A2 (en) *	2001-12-13	2003-07-02	AMT Holdings, Inc.	Process for preparing metal coatings from liquid solutions utilizing cold plasma
EP1617467A1 (en) *	2003-03-26	2006-01-18	Riken	Process for producing dielectric insulating thin film, and dielectric insulating material

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JPH01199678A (en) *	1988-02-03	1989-08-11	Mitsubishi Electric Corp	Formation of high purity thin sio2 film
US5773363A (en) *	1994-11-08	1998-06-30	Micron Technology, Inc.	Semiconductor processing method of making electrical contact to a node
US5661115A (en) *	1994-11-08	1997-08-26	Micron Technology, Inc.	Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
JP3704792B2 (en) *	1996-03-29	2005-10-12	松下電工株式会社	Method for producing photocatalytic material
JP4396088B2 (en) *	2001-08-23	2010-01-13	コニカミノルタホールディングス株式会社	Atmospheric pressure plasma processing apparatus and atmospheric pressure plasma processing method
US6849306B2 (en) *	2001-08-23	2005-02-01	Konica Corporation	Plasma treatment method at atmospheric pressure
JP3997314B2 (en) *	2002-04-26	2007-10-24	三洋電機株式会社	Method for forming dielectric film
JP2005026175A (en) *	2003-07-02	2005-01-27	Tokyo Institute Of Technology	Electrode for solid polymer fuel cell and its manufacturing method
GB0323295D0 (en) *	2003-10-04	2003-11-05	Dow Corning	Deposition of thin films
JP2006096577A (en) *	2004-09-28	2006-04-13	Tokyo Institute Of Technology	Metal oxide film, method for producing the same, and formed article
JP4042737B2 (en) *	2004-10-27	2008-02-06	セイコーエプソン株式会社	Pattern forming system
JP2006162754A (en) *	2004-12-03	2006-06-22	Dainippon Printing Co Ltd	Pattern forming body and its manufacturing method
JP4825001B2 (en)	2005-12-26	2011-11-30	日建塗装工業株式会社	Thermal spray deposition method for super engineering plastics laminated film
DE102007014198B4 (en) *	2007-03-24	2012-11-15	Qimonda Ag	Integrated component and method for manufacturing an integrated component

2009
- 2009-10-05 US US13/122,385 patent/US20110236593A1/en not_active Abandoned
- 2009-10-05 JP JP2010531939A patent/JP5920802B2/en active Active
- 2009-10-05 EP EP09817921.1A patent/EP2351872B1/en active Active
- 2009-10-05 WO PCT/JP2009/067341 patent/WO2010038894A1/en active Application Filing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20020190251A1 (en) *	2001-03-13	2002-12-19	Toyoki Kunitake	Thin film materials of amorphous metal oxides
EP1323846A2 (en) *	2001-12-13	2003-07-02	AMT Holdings, Inc.	Process for preparing metal coatings from liquid solutions utilizing cold plasma
EP1617467A1 (en) *	2003-03-26	2006-01-18	Riken	Process for producing dielectric insulating thin film, and dielectric insulating material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010038894A1 *

Also Published As

Publication number	Publication date
US20110236593A1 (en)	2011-09-29
EP2351872A1 (en)	2011-08-03
EP2351872B1 (en)	2021-06-09
JPWO2010038894A1 (en)	2012-03-01
WO2010038894A1 (en)	2010-04-08
JP5920802B2 (en)	2016-05-18

Publication	Publication Date	Title
IL212348A0 (en)	2011-06-30	Treatment method
EP2351872A4 (en)	2017-11-01	Treatment method using plasma
EP2321009B8 (en)	2014-08-27	Radiotherapy apparatus
WO2010025430A9 (en)	2010-05-27	Homeopathic therapeutic method
EP2267764A4 (en)	2011-05-04	Plasma processing method
AU2013204721A1 (en)	2013-12-12	Methods for treating cachexia
WO2010010360A9 (en)	2010-03-18	Method
WO2010080603A9 (en)	2010-11-18	Method of treatment of aggression
GB2465932B (en)	2013-03-27	Plasma processing method
AU2008905250A0 (en)	2008-10-30	Treatment process
AU2008903259A0 (en)	2008-07-10	Method of treatment
AU2008904478A0 (en)	2008-09-11	Method of treatment
AU2008902659A0 (en)	2008-06-12	Method of Treatment
AU2008900291A0 (en)	2008-02-07	Method of treatment
AU2008904356A0 (en)	2008-09-11	Method of Treatment
AU2008901565A0 (en)	2008-04-17	Therapeutic method
AU2007903139A0 (en)	2007-06-28	Method of treatment
AU2007900278A0 (en)	2007-02-01	Method of treatment
AU2008903444A0 (en)	2008-07-24	A method of treatment
AU2008903467A0 (en)	2008-07-24	A method of treatment
AU2008902088A0 (en)	2008-05-15	A method of treatment
AU2008903020A0 (en)	2008-06-26	Treatment
AU2008902372A0 (en)	2008-05-29	Methods of treatment
AU2007901118A0 (en)	2007-03-22	Treatment methods
AU2008904040A0 (en)	2008-08-28	Recarburisation method

Legal Events

Date	Code	Title	Description
2011-07-01	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
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2012-01-11	DAX	Request for extension of the european patent (deleted)
2012-12-12	RAP1	Party data changed (applicant data changed or rights of an application transferred)	Owner name: OKINO, AKITOSHI Owner name: MIYAHARA, HIDEKAZU
2012-12-12	RIN1	Information on inventor provided before grant (corrected)	Inventor name: MIYAHARA, HIDEKAZU Inventor name: OKINO, AKITOSHI
2017-07-19	RIC1	Information provided on ipc code assigned before grant	Ipc: C23C 18/14 20060101ALI20170615BHEP Ipc: H05K 3/10 20060101ALI20170615BHEP Ipc: H05K 3/08 20060101ALI20170615BHEP Ipc: H01L 21/3205 20060101ALI20170615BHEP Ipc: C23C 18/12 20060101ALI20170615BHEP Ipc: C23C 18/06 20060101ALI20170615BHEP Ipc: C23C 18/00 20060101AFI20170615BHEP
2017-11-01	RA4	Supplementary search report drawn up and despatched (corrected)	Effective date: 20171004
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