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EP1340262A2 - Memoire rom a fusibles multiples comprenant une structure de cellules a dispositif mos et procede de lecture et d'ecriture pour cette memoire - Google Patents

Memoire rom a fusibles multiples comprenant une structure de cellules a dispositif mos et procede de lecture et d'ecriture pour cette memoire

Info

Publication number
EP1340262A2
EP1340262A2 EP01997848A EP01997848A EP1340262A2 EP 1340262 A2 EP1340262 A2 EP 1340262A2 EP 01997848 A EP01997848 A EP 01997848A EP 01997848 A EP01997848 A EP 01997848A EP 1340262 A2 EP1340262 A2 EP 1340262A2
Authority
EP
European Patent Office
Prior art keywords
region
fuse element
fuse
gate
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01997848A
Other languages
German (de)
English (en)
Inventor
Elie G. Khoury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of EP1340262A2 publication Critical patent/EP1340262A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors

Definitions

  • the present invention is generally directed to the memory devices.
  • the present invention relates to a method of programming a one-time programmable array implemented with suicided poly-silicon fuses.
  • Non- volatile memory includes ROM (read-only memory), EEPROM (electrically erasable ROM), and NVRAM (non-volatile RAM). Such memory retains its stored information even after the power supply is removed.
  • ROM read-only memory
  • BIOS built-in operating system
  • Semiconductor ROM is typically an array of memory cells that may be programmed by the user. Depending upon the type, the memory array may be programmed a multiple of times or is one-time-only programmable (OTP).
  • OTP ROM is an array of memory cells having fuse or anti-fuse fusible links. Fuse links are opened (i.e., by "blowing" open the fuses) by the application of a programming current. The opened fuse link has an impedance much greater than that of one not programmed.
  • an anti-fuse when programmed has an impedance much less than that of one not programmed.
  • An anti-fuse link is closed by initiating a deliberate electromigration of a conductive material bridging the gap between the anti-fuse link's two terminals. Consequently, in either fuse link type, programmed cells are in a logic state opposite that of non-programmed cells.
  • the programming voltage and current is about 30 volts and 100mA, respectively. This is significantly higher than the normal power supply voltage, V dd which usually ranges from 1.5v to 5.5v in MOS circuits. Having such a programming voltage/current requirement poses significant challenges to designing, testing, and using the OTP array. For example, a tester and software may have special requirements to generate and test for the high voltage programming. The design itself may require charge pump schemes to step up the power supply voltage to provide programming signals. These workarounds increase the cost of design and test.
  • a one-time programmable memory has a fuse element coupled to a large switching transistor.
  • the large switching transistor is integral to the programming of the fuse element.
  • a programmable memory cell comprises a fuse element having a first terminal and a second terminal and a switching transistor having a drain, source, and a gate.
  • the drain of the switching transistor is couple to the second terminal of the fuse element, it surrounds the fuse element.
  • the gate surrounds the drain which in turn, is surrounded by the source.
  • the gate is laid out in a serpentine pattern. The physical layout builds an electrical equivalent of a large switching transistor.
  • an integrated circuit comprises at least one row line and at least one column along first and second directions, respectively.
  • a semiconductor array of at least one programmable memory cell is arranged in rows and columns. Each programmable memory is accessible in response to levels established on selected ones of the row and column lines.
  • the programmable memory cell comprises a fuse element having a first terminal and a second terminal and a switching transistor having a drain, source, and a gate. The drain of the switching transistor surrounds the fuse element; the gate surrounds the drain; and the source surrounds the gate. Coupled to the first terminal of the fuse element is the row line. The second terminal of the fuse element is coupled to the drain of the switching transistor. Coupled to the gate of the switching transistor is the column line.
  • the switching transistor may be either N-MOS or P-MOS or BiCMOS.
  • the fuse element may be either a fuse or an anti-fuse.
  • FIG. 1 illustrates a fuse cell as applied to the present invention
  • FIG. 2A depicts in layout the circuit of FIG. 1 having the poly-silicon, first metal, and contact points of the present invention
  • FIG. 2B depicts the layout of FIG. 2A showing the additional second and third metal layers
  • FIG. 2C depicts FIG. 2B having the inter-level contacts (vias) showing the fuse cell and its relation to placement in an array;
  • FIG. 3 depicts the architecture of the fuse array with Read and Write Circuits according to an embodiment of the present invention
  • the present invention has been found to be useful and advantageous in connection with providing more reliable OTP (one time programmable structure) by using a salicided (self-aligned suicided) poly-silicon fuse structure array fabricated by a sub-micron CMOS process.
  • the OTP salicided poly-silicon fuse array is based on a building cell that includes a salicided poly-silicon fuse and a MOS switch.
  • the two terminal fuse link has one terminal connected to an x-axis (row node) and the other terminal connected to the drain of a wide N-MOS device (switch).
  • the N-MOS device's other two terminals, the source and gate are connected to ground and y-axis (column), respectively.
  • the cells are grouped together to form an array of fuses.
  • An example of a suitable OTP suicided poly-silicon fuse link may be found in U.S. Patent No. 5,854,510 of Sur et al. titled, "Low Power Programmable Fuse Structures.”
  • An example of suitable OTP anti-fuse link may be found in U.S. Patent No. 5,899,707 of Sanchez et al. titled, "Method for Making Doped Anti-fuse Structures.”
  • another example of a suitable OTP anti-fuse may also be found in U.S. Patent No. 6,016,001 of Sanchez et al.
  • the fuse cell 100 has a fuse link 130 coupled to the drain 130a of the N-MOS transistor 140 and to row 120 at 120a.
  • the gate of the N-MOS transistor 140 is coupled to the column 110 at 110a.
  • the source of the N-MOS transistor is coupled to ground at 140c.
  • Multiples of the fuse cell 100 are grouped to form an array.
  • Each row of the array is connected to a wide P-MOS switch whose gate is coupled to the row decoder and whose source is coupled to a single write current source.
  • a write is accomplished by selecting one row and one column that creates a path for the write current to blow a single fuse.
  • Each row of the array is connected to a small P-MOS device that mirrors a small read current.
  • the read current is switched on during read mode with an N-MOS switch.
  • one column of cells is selected and the read current biases each fuse in the column.
  • Each of the resulting voltage drops across each fuse is then compared to a single reference voltage generated by a reference fuse.
  • the reference fuse has a known impedance, a multiple of the impedance of an unblown fuse. In one example embodiment according to the present invention, the reference fuse has twice the impedance of an unblown fuse.
  • An example method of programming a suicided poly-silicon fuse may be found in U.S. Patent No. 5,976,943 of Manley et al, titled, "Method for Bi-Layer Programmable Resistor," incorporated by reference, herein. Additionally, an example method of programming anti-fuse structures may be found in U.S. Patent No. 5,753,540 of Wu et al, titled, "Apparatus and Method for Programming Anti-fuse Structures,” also incorporated by reference, herein.
  • the fuse structure has a cell design in which the fuse link is surrounded by a switching element.
  • the switching element is a wide N-MOS transistor.
  • Other switching elements may be used such as a wide P-MOS transistor or BiCMOS-based transistor.
  • the specific application and process technology determine the suitable device chosen.
  • the circuit of FIG. 1 has a layout 300 of the fuse 320b having a first terminal 320a and a second terminal 320c.
  • the fuse is surrounded by a wide (in the range of about 80 to about 150um) N-MOS switching element that is made by using a serpentine structure 330b for the poly-silicon gate.
  • the example circuit is built on a three-layer metal technology. However, the invention may be implemented in higher-order metal technology.
  • the wide N- MOS device is needed to carry a relatively large write current.
  • the first terminal 320a of fuse 320b is connected to a row line.
  • the second terminal 320c of the fuse 320b is coupled to the drain 330a of the wide N-MOS device.
  • the gate 330b is connected in the array to a column at 310a and 310b.
  • the multiple connections protect against voltage-drops.
  • the source 330c (shown in FIG. 2A as covered with a first metal layer) of the N-MOS transistor surrounds the serpentine gate 330b; the serpentine gate 330b, in turn surrounds the drain 330a.
  • Contacts (not illustrated) in active device areas enable bonding of the first metal layer to the drain 330a and the source 330c. In subsequent metal layers, the interconnects between them are referred to as "vias.”
  • FIG. 2B Multiple metal layers connect the fuse 130 and wide N- MOS device 140 building the circuit as depicted in FIG. 1.
  • a first metal layer 330c' connects the source 330c. This makes it easy to abut cells together in an array fashion since all N-MOS sources are connected to ground (Nss).
  • a horizontal second metal layer 320a' connects the first fuse terminal 320a to the row line of the array.
  • the second fuse terminal 320c connects to the drain 330a of transistor 300.
  • the gate 330b is connected to a third metal layer at the column connection 310d.
  • the gate 330b through a contact follows a path to a first metal 310b (inter-layer interconnect as shown in FIG. 2C).
  • the path continues to second metal 310b' through a via. From second metal 310b' to a third metal 31 Od through a second via, the path is complete to column connection 31 Od.
  • the column 3 lOd that connects the gate 330b
  • row320a' that connects the first fuse terminal 320a
  • the source 330c of the N-MOS switching transistor connects to ground (Vss) through a third metal layer 330c'.
  • the fuse cell element's three metal layers are connected at the appropriate locations to construct the circuit of FIG. 1. Inter-level connections, contacts and vias provide electrical connection, where desired, for different metal layers.
  • one or more vias 320a" connects the first terminal 320a of fuse 320b to second metal 320a.
  • the first terminal 320a of fuse 320b has a first metal contacting the poly silicon. (Not illustrated).
  • the source 330c is connected to a second metal layer 320c' through one or more vias 330c.
  • One or more vias 310d' connects a third metal layer 31 Od to second metal layer 310b' through the first metal 310b and 310a that are coupled to the serpentine gate 330b.
  • the fuse cell 300 has inherent security features.
  • the fuse element 330 may be covered with second metal and third metal to
  • the 200 employs the fuse cell 100 of FIG. 1 of the afore-mentioned layout of FIGS. 2A - 2C.
  • the fuse cell 240 is laid out in an array 230.
  • the write circuit 210 and read circuit 205 areceive signals from the digital control block 230.
  • the digital control block 230 enables the user to select and program a fuse from the array by addressing the appropriate location.
  • Input 220 receives signals from the digital control block 230.
  • the array is set to either read or write from signals received by input at 225. After programming, the digital control block enables the user to read a whole column at a time.
  • the layout of the fuse cell element enables the mapping of write and read location with the same address.
  • a particular fuse cell is selected using a 10-bit address.
  • the programmed fuse 240 is compared with an unblown reference fuse 205b with a comparator circuit, which may be a sense amplifier 235.
  • the reference fuse which may be selectable, is 4x, 6x, 8x, orlOx the physical size or resistance of the fuse link in a memory cell.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne une structure à programmation unique (OTP : one-time programmable) réalisée à l'aide d'un fusible de silicium polycristallin obtenu par un procédé SALICIDE (self-aligned silicidation). Dans un exemple de réalisation, cette structure OTP se présente sous forme d'un élément fusible comprenant une première borne et une seconde borne. Un transistor de commutation comprenant un drain, une source et un grille entoure cet élément fusible. Le drain est connecté avec la seconde borne de l'élément fusible, la grille entoure le drain et la source entoure la grille. Pour construire un transistor présentant une capacité d'attaque suffisante pour programmer l'élément fusible, on choisira une géométrie de grille sera en forme de serpentin ou d'un motif équivalent permettant d'augmenter le rapport L/L effectif. Une des caractéristiques de cette topologie est qu'elle permet de disposer les cellules OTP bout à bout de manière qu'elles forment une matrice. La métallisation est réalisée de manière que les lignes des rangées horizontales sont connectées avec la première borne de l'élément fusible et que les lignes de colonnes sont connectées avec la grille du transistor de commutation. Cette disposition permet de placer les circuits de lecture et d'écriture sur les côtés opposés de la matrice. Toutes les grilles d'une colonne peuvent être lues simultanément tandis que le courant d'écriture est fourni pour la programmation d'un fusible à la fois.
EP01997848A 2000-11-27 2001-11-19 Memoire rom a fusibles multiples comprenant une structure de cellules a dispositif mos et procede de lecture et d'ecriture pour cette memoire Withdrawn EP1340262A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72341300A 2000-11-27 2000-11-27
US723413 2000-11-27
PCT/EP2001/013467 WO2002043152A2 (fr) 2000-11-27 2001-11-19 Memoire rom a fusibles multiples comprenant une structure de cellules a dispositif mos et procede de lecture et d'ecriture pour cette memoire

Publications (1)

Publication Number Publication Date
EP1340262A2 true EP1340262A2 (fr) 2003-09-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP01997848A Withdrawn EP1340262A2 (fr) 2000-11-27 2001-11-19 Memoire rom a fusibles multiples comprenant une structure de cellules a dispositif mos et procede de lecture et d'ecriture pour cette memoire

Country Status (4)

Country Link
EP (1) EP1340262A2 (fr)
JP (1) JP2004515061A (fr)
TW (1) TWI268603B (fr)
WO (1) WO2002043152A2 (fr)

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CN100481269C (zh) * 2002-12-05 2009-04-22 Nxp股份有限公司 可编程非易失性半导体存储器件
US7136322B2 (en) * 2004-08-05 2006-11-14 Analog Devices, Inc. Programmable semi-fusible link read only memory and method of margin testing same
GB0516423D0 (en) * 2005-08-10 2005-09-14 Cavendish Kinetics Ltd Fuse cell, array and circuit therefor
WO2007027607A2 (fr) * 2005-08-31 2007-03-08 International Business Machines Corporation Rom a fusibles electroniques electriquement programmables a acces aleatoire
KR101780828B1 (ko) 2012-02-06 2017-09-22 매그나칩 반도체 유한회사 비휘발성 메모리 장치
US20140027778A1 (en) * 2012-07-25 2014-01-30 International Rectifier Corporation Robust Fused Transistor
US9922720B2 (en) * 2013-03-07 2018-03-20 Intel Corporation Random fuse sensing
EP3382712B1 (fr) 2017-03-31 2020-11-04 Nxp B.V. Système de mémoire
FR3087290B1 (fr) 2018-10-16 2020-11-06 St Microelectronics Sa Point memoire

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US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5854510A (en) * 1996-12-27 1998-12-29 Vlsi Technology, Inc. Low power programmable fuse structures

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JPS5846174B2 (ja) * 1981-03-03 1983-10-14 株式会社東芝 半導体集積回路
JPS5863147A (ja) * 1981-10-09 1983-04-14 Toshiba Corp 半導体装置
JPS58197874A (ja) * 1982-05-14 1983-11-17 Nec Corp 半導体装置およびその製法
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
US5412593A (en) * 1994-01-12 1995-05-02 Texas Instruments Incorporated Fuse and antifuse reprogrammable link for integrated circuits
US5748025A (en) * 1996-03-29 1998-05-05 Intel Corporation Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
JPH1187696A (ja) * 1997-09-12 1999-03-30 Matsushita Electric Works Ltd 高耐圧半導体装置

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US5854510A (en) * 1996-12-27 1998-12-29 Vlsi Technology, Inc. Low power programmable fuse structures

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Title
See also references of WO0243152A2 *

Also Published As

Publication number Publication date
JP2004515061A (ja) 2004-05-20
WO2002043152A3 (fr) 2002-09-19
WO2002043152A2 (fr) 2002-05-30
TWI268603B (en) 2006-12-11

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