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EP0439586A1 - Circuit de commutation utilisant un inducteur et des dispositifs igbt - Google Patents

Circuit de commutation utilisant un inducteur et des dispositifs igbt

Info

Publication number
EP0439586A1
EP0439586A1 EP90912477A EP90912477A EP0439586A1 EP 0439586 A1 EP0439586 A1 EP 0439586A1 EP 90912477 A EP90912477 A EP 90912477A EP 90912477 A EP90912477 A EP 90912477A EP 0439586 A1 EP0439586 A1 EP 0439586A1
Authority
EP
European Patent Office
Prior art keywords
circuit
junction
inductor
terminal
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP90912477A
Other languages
German (de)
English (en)
Other versions
EP0439586A4 (en
Inventor
Craig S. Cambier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Power Solutions US Co
Original Assignee
Unique Mobility Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unique Mobility Inc filed Critical Unique Mobility Inc
Publication of EP0439586A1 publication Critical patent/EP0439586A1/fr
Publication of EP0439586A4 publication Critical patent/EP0439586A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
    • H02P6/14—Electronic commutators
    • H02P6/15—Controlling commutation time
    • H02P6/153—Controlling commutation time wherein the commutation is advanced from position signals phase in function of the speed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Definitions

  • the invention relates to switching circuits ior power devices, such as those for use in controllers for brushless motors, DC/AC inverters, switching power amplifiers or the like.
  • the invention employs an insulated gate bipolar transistor (IGBT) as the upper electronic device in a switching circuit.
  • IGBT insulated gate bipolar transistor
  • dv/dt parasitic source-to-drain diode that is inherent in the MOSFET's fabrication.
  • the problem is referred to as the "dv/dt" problem or “commutating SOA” .
  • the dynamic dv/dt problem is simply not a problem.
  • the condition under which concern is warranted is when the load has inductive characteristics with a lagging current and the current does not reverse within the period of the switching cycle.
  • circuits with potential commutation problems are PWM brushless motor controllers, DC-AC inverters that construct AC waveforms of much lower frequency than the switching frequency, and switching power amplifiers. These circuits have the condition where the parasitic diode in the MOSFET device may never come out of conduction before the other device turns on again, which leads to a reverse recovery of the conduction parasitic diode.
  • the high level of current combined with the high level of voltage across the device toward the end of the recovery (when the current is highest), causes what is known as dv/dt failure.
  • the parasitic diode in the power MOSFET is actually the base-collector junction of a parasitic bipolar transistor that exists due to the fabrication of the power MOSFET.
  • This parasitic bipolar transistor 1 is in parallel with FET 3 as shown in Q x in Figure 1.
  • the upper and lower devices, Q x and Q 2 are switched with pulse-width-modulated drive circuit 5 to control the bus voltage applied to a load Z.
  • the inductive fly-back causes the voltage at the load terminal to exceed the positive rail voltage. This would force current into resistor R B1 and the base-to-collector diode of the parasitic transistor 1 of Qi and back into the positive rail.
  • One proposed solution is to use devices that are rated at voltages significantly higher than the bus voltage.
  • the R DS ( 0 _ . ) °f MOSFET devices tends to increase with voltage rating, resulting in a serious penalty.
  • the breakdown voltage BV CE Q of the parasitic transistors is about half of the corresponding BV DSS of the MOSFET device.
  • FIG. 3 Another proposal illustrated in Fig. 3 is to add a Schottky rectifier diode 11 in series with Qj and Q 2 and a fast recovery diode 13 in reverse parallel to Q x and Schottky combination.
  • a Schottky rectifier diode 11 adds power loss to the other losses at load current and reduces the efficiency of the circuit.
  • a possible problem can still result from the current fed by the high capacitance of the Schottky diode 11 into Q x during the flyback period to t x .
  • FIG. 4 Another proposal illustrated in Fig. 4 is to add a slow recovery diode 15 in series with an external voltage source 17. However, the penalty of additional parts and voltage source 17 is a significant factor in this scheme.
  • Another problem is extending the current range of the switching circuit when operating voltages exceed approximately 200 volts.
  • the forward resistance of the device is one of the factors which determine the current load capacity. If the forward resistance is reduced, the current load capacity is increased.
  • the object of this invention is to provide such a tool overcoming the above problems, and particularly, for use in a DC/AC inverter, switching power amplifier, PWM brushless motor controller or the like.
  • a switching circuit which is adapted to be connected to a power source having a high voltage rail and a low voltage rail.
  • the switching circuit includes a first device, a first inductor, a second inductor and a second device, all of which are connected in series with one another to form a first junction between the first device and the first inductor, a second junction between the first inductor and the second inductor and a third junction between the second inductor and the second device.
  • the first device includes a terminal adapted to be connected to the high voltage rail and the second device includes a terminal adapted to be connected to the low voltage rail, such that the first and second devices can be connected in series with the power source.
  • the circuit can also include a first diode connected between said terminal of the second device and the first junction to prevent harmful reverse current flow and to provide a bypass around the second device which is not yet turned on while the first device is just turned off, and a second diode connected between the third junction and said terminal of the first device to perform the same function as the first diode but with respect to the first device.
  • the circuit also includes means for switching the first and second devices alternately such that a load connected to the second junction is supplied with an output voltage. Also, according to the invention, a switching circuit is provided which is adapted to be connected to a power source having a high voltage rail and a low voltage rail.
  • the switching circuit includes a first device, an inductor and a second device, all connected in series with one another to form a first junction between the first device and the inductor and a second junction between the inductor and the second device.
  • the first device includes a terminal adapted to be connected to the high voltage rail and the second device includes a terminal adapted to be connected to the low voltage rail, such that the first and second devices can be connected in series with the power source.
  • the circuit can also include a first diode connected between said terminal of the second device and the first junction and a second diode connected between the second junction and said terminal of the first device.
  • the circuit also includes means for switching the first or second device or both devices on and off such that a load connected to either the first or second junction is supplied with an output voltage.
  • the first and second devices can be current control elements such as semiconductor elements, e.g., FETs, particularly MOSFET devices.
  • the switching circuit can be employed, e.g., in a DC/AC inverter or the like.
  • the first device can be an insulated gate bipolar transistor (IGBT).
  • IGBT insulated gate bipolar transistor
  • the first device can include a third diode that is connected between the terminal of the first device and the first junction to prevent harmful reverse current flow.
  • the invention is based on the concept of controlling the dv/dt rate of the capacitor of a parasitic transistor (when the devices are FETs) by delaying the charging until the current is at a reduced value.
  • the invention also involves the concept of controlling the di/dt rate through the device by providing an inductor in series with the device. The diodes function as catch diodes to divert the flyback current from the device.
  • Fig. 1 illustrates a prior art switching circuit employing a pair of devices Q x and Q 2 ;
  • Fig. 2 illustrates the currents in the two devices and the output voltage at the load at various times in the switching cycle
  • Figs. 3 and 4 illustrate additional prior art switching circuits
  • Fig. 5 shows a first embodiment of a switching circuit according to the invention
  • Fig. 6 illustrates the device currents and output voltages at various times in the switching cycle of the Fig. 5 and Fig. 8 circuits;
  • Figs. 7a and 7b illustrate second and third embodiments of a switching circuit according to the invention;
  • Fig. 8 illustrates the fourth embodiment of a switching circuit according to the invention
  • Fig. 9 illustrates the drive characteristics of the IGBT in the fourth embodiment.
  • Figs. 10-12 illustrate the fifth, sixth and seventh embodiments of a switching circuit according to the invention.
  • FIG. 5 shows a configuration of two devices Q x and Q 2 , identical to devices Q x and Q 2 in Figs. 1, 3 and 4, forming a half bridge separated by two inductors.
  • Two diodes Dl and D2 of voltage and current ratings similar to those of devices Q x and Q 2 are part of the new concept also.
  • the directions of current shown in different parts of the circuit are assumed to be the positive directions.
  • Figures 6 and 10 show the waveforms of current through devices Q x and Q 2 and diodes Dl and D2 at turn-on and turn-off.
  • the two inductors should be capable of operating at full load current without saturation.
  • the safe value of di/dt for a particular circuit depends on a number of parameters, specifically, the device rating and operating temperature.
  • inductor L x dissipates its energy in the loop formed by Q 2 and O ⁇ .
  • the drive signals supplied by PWM drive circuit 21 to both Q ⁇ and Q 2 are modulated at a high frequency.
  • This means continuous switching which may be, e.g., PWM switching, of both devices during their corresponding conduction periods.
  • Two inductors are supplied between Q x and Q 2 .
  • the load is connected between the two inductors ensuring that there is one inductor in the circuit of each device as it is switching.
  • the inductor plays its most critical role at t 2 by limiting di/dt to a predictable value as shown by above Equation 2.
  • the peak value of current reached by t 3 is a fraction of the load current because of this controlled slew rate.
  • the inductor need not be designed with a saturation level at high values of current. This would be accomplished by using the circuit of Figure 7a when switching device Q x and by using the circuit of Figure 7b when switching device Q 2 . This results in a significant reduction in the size of the inductor.
  • the drive signals that are supplied from the PWM drive circuits 21 to both switching devices Q x and Q 2 are operated at the same high frequency to control the circuit. This high frequency is superimposed on a low commutation frequency.
  • the devices Qj and Q 2 are switched on and off many times within a period that is determined by the lower commutation frequency. This commutation frequency is dependent on the transducer speed and the number of poles.
  • Using a MOSFET as Qi and Q 2 allows efficient control of the circuit.
  • the high frequency is not necessarily applied to the upper device 0 ⁇ . Eliminating the high frequency from the upper device results in an unexpected advantage.
  • This advantage is removal of the requirement of a MOSFET device at the upper device Q_ .
  • a MOSFET is still required at the lower device Q 2 because of the requirement of low conduction losses and fast switching times.
  • the upper device Q can be an IGBT.
  • the MOSFET in the upper device Ql is no longer required for efficient operation.
  • Using an IGBT has several advantages. In contrast to a MOSFET, an IGBT permits a higher current for a particular junction temperature.
  • the IGBT's forward voltage drop at a given current for approximately 200 volts and higher is lower than the MOSFET's forward voltage drop. Since this forward voltage drop determines the current load capacity, the IGBT can have a higher current load capacity. These two factors, the higher current for a particular junction temperature and the lower forward voltage drop, result in overall higher current load capacity.
  • the switch-off safe operating areas (SOAR) of the IGBT and the MOSFET are rectangular.
  • the IGBT's SOAR is equal to or is slightly less than the MOSFET's SOAR. The losses that are associated with the higher switching off times of the IGBT are negligible compared to total device losses because the IGBT is operated at the lower commutation frequency.
  • the use of an IGBT in the upper device Q ⁇ is especially advantageous at low speeds.
  • the load current is determined by the thermal limitations of the upper circuits.
  • the increase in current capacity at low speeds can be 100% of the current capacity without the IGBT. This increase is important in applications where the demand for power, which is directly related to current, is greater at low speeds than at high speeds, e.g. an electric vehicle.
  • the load current of the drive circuit at high speeds is determined by the thermal limitations of the lower device which is a MOSFET. Thus at high speeds, the load current is not increased.
  • the IGBT replaces the MOSFET as the upper device Q ⁇ of Figures 5, 7a and 7b respectively.
  • diodes D 5 and D6 are connected across the IGBTs in reverse parallel.
  • the additional P layer at the collector creates a virtual diode of low blocking voltage which could be damaged by reverse bias conditions.
  • the diodes D 5 and D6 protect the IGBTs from a reverse bias which could damage the IGBTs. Additionally, if the current through an IGBT exceeds a predetermined value, the IGBT's operating characteristics change and become similar to a Silicon Controlled
  • Rectifier SCR Specifically, the IGBT's gate loses control of the ability to turn the IGBT off. This loss of control can be prevented by additional circuitry (not shown) .
  • the IGBT and the MOSFET are compatible in their drive circuit requirements. This compatibility makes the two devices interchangeable in power circuits.
  • the switching circuit can be employed in an electric motor controller (e.g., a PWM brushless motor controller), DC/AC inverters, switching power amplifiers, or the like.
  • an electric motor controller e.g., a PWM brushless motor controller
  • DC/AC inverters e.g., DC/AC inverters
  • switching power amplifiers e.g., switching power amplifiers, or the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)

Abstract

L'invention concerne un circuit de commutation qui est destiné à être connecté à une source d'alimentation (V+ et V-). Le circuit comprend un premier dispositif (Q1), un inducteur (L1 et L2) et un second dispositif (Q2), tous étant connectés en série. Un seul inducteur ou deux inducteurs connectés en série est/sont connecté(s) en série entre le premier dispositif et le second dispositif. L'un de ces premier et second dispositifs ou les deux sont mis sous tension et hors tension pour alimenter une charge (Z) avec une tension de sortie. Le circuit peut également comprendre des diodes (D1 et D2) pour empêcher une inversion préjudiciable de l'écoulement de courant et établir des dérivations autour des premier et second dispositifs. Les premier et second dispositifs peuvent être des éléments à semi-conducteur, tels que des transistors à effet de champ, et en particulier des MOSFET. Le premier dispositif peut être un IGBT (transistor bipolaire à porte isolée).
EP19900912477 1989-08-22 1990-08-22 Switching circuit employing an inductor and igbt devices Withdrawn EP0439586A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US530793 1983-09-08
US39663689A 1989-08-22 1989-08-22
US396636 1989-08-22
US07/530,793 US5107151A (en) 1989-08-22 1990-05-30 Switching circuit employing electronic devices in series with an inductor to avoid commutation breakdown and extending the current range of switching circuits by using igbt devices in place of mosfets

Publications (2)

Publication Number Publication Date
EP0439586A1 true EP0439586A1 (fr) 1991-08-07
EP0439586A4 EP0439586A4 (en) 1993-05-19

Family

ID=27015589

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19900912477 Withdrawn EP0439586A4 (en) 1989-08-22 1990-08-22 Switching circuit employing an inductor and igbt devices

Country Status (8)

Country Link
US (1) US5107151A (fr)
EP (1) EP0439586A4 (fr)
JP (1) JPH04502997A (fr)
KR (1) KR920702088A (fr)
AU (1) AU6180790A (fr)
IE (1) IE903015A1 (fr)
IL (1) IL95438A (fr)
WO (1) WO1991003104A1 (fr)

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Also Published As

Publication number Publication date
KR920702088A (ko) 1992-08-12
EP0439586A4 (en) 1993-05-19
JPH04502997A (ja) 1992-05-28
IE903015A1 (en) 1991-04-10
AU6180790A (en) 1991-04-03
IL95438A (en) 1994-06-24
IL95438A0 (en) 1991-06-30
WO1991003104A1 (fr) 1991-03-07
US5107151A (en) 1992-04-21

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