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EP0132585B1 - Procédé d'arrachement et composition pour ce procédé - Google Patents

Procédé d'arrachement et composition pour ce procédé Download PDF

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Publication number
EP0132585B1
EP0132585B1 EP84107042A EP84107042A EP0132585B1 EP 0132585 B1 EP0132585 B1 EP 0132585B1 EP 84107042 A EP84107042 A EP 84107042A EP 84107042 A EP84107042 A EP 84107042A EP 0132585 B1 EP0132585 B1 EP 0132585B1
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EP
European Patent Office
Prior art keywords
layer
mixture
methyl
polyaryl sulfone
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP84107042A
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German (de)
English (en)
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EP0132585A2 (fr
EP0132585A3 (en
Inventor
Beverly Louise Olsen
Augustus Ceniza Ouano
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International Business Machines Corp
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International Business Machines Corp
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Publication of EP0132585A3 publication Critical patent/EP0132585A3/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/118—Initiator containing with inhibitor or stabilizer

Definitions

  • This invention relates to a lift-off process for depositing a metallurgy pattern on a substrate and a composition for use therein.
  • the process is used for producing micro-miniaturized electronic elements, more specifically relates to lift-off masking methods and other masking methods, and still more specifically to a device fabrication method using sacrificial layers that are not adversely affected by radiation.
  • the interconnection metallurgy was fashioned by depositing a blanket layer of a metal on the surface of the substrate, depositing, exposing and developing a resist layer to define the desired metal pattern by leaving exposed the unwanted portions. The exposed areas were then removed by etching leaving the desired metallurgy pattern.
  • new techniques known as lift-off, masking, stencil method, or expendable mask method was developed.
  • U.S. Patents 3,873,361; 4,004,044; 4,035,276; 4,090,006; and 4,202,914 disclose and claim various modifications of lift-off masking techniques.
  • a first sacrificial layer usually of an organic polymeric material, is deposited on the substrate, possibly in combination with an overlying inorganic material, and the desired metallurgy pattern formed in the sacrificial layer using photolithographic techniques to define the openings.
  • photolithographic techniques to define the openings.
  • a blanket layer of the desired metal is then deposited over the first layer after the resist layer has been removed. Thereafter the sacrificial layer is exposed to a solvent and the layer removed along with the overlying metal portions. The metal areas that are in direct contact with the substrate, which form the metallurgy, remain.
  • Radiation is involved in many processing operations associated with electronic device technology, i.e. sputter etching and deposition, vapor deposition using an electron beam for source vaporization, and ion implantation. In all of these operations a masking step is inherently involved.
  • NMP N-methyl-pyrrolidone
  • Another object of this invention is to provide a high resolution lift-off masking process for depositing a metal interconnection system on an integrated circuit which utilizes said stabilized polyaryl sulfone, that can readily be dissolved and removed following exposure to high intensity radiation, as a sacrificial masking layer.
  • the lift-off process of the invention for depositing metallurgy layers on substrates include the steps of (1) preparing a resin mixture of a polyaryl sulfone polymer and a compound of the formula wherein R1 is a methyl, ethyl, or an ⁇ -branched alkyl group of from 3 to 10 carbon atoms, R2 is a hydrogen, methyl, ethyl or an ⁇ -branched alkyl group of from 3 to 10 carbon atoms, and X has a value of 1 - 6, and Z is an aliphatic hydrocarbon of the formula C5H8 in an amount of from 0.5 to 3.5 % by weight of the polyaryl sulfone, depositing a blanket layer of the resin mixture on the surface of a semiconductor wafer, selectively removing areas of the blanket layer to define the reverse image of the desired metallurgy pattern, depositing a blanket layer of conductive metal, and exposing the resultant coated wafer to the solvent for the polyaryl sulf
  • composition of the invention for producing a masking layer that is stable in a high intensity radiation environment which composition includes a polyaryl sulfone resin and a stabilizing compound as described in the above paragraphs in an amount in the range of 0.1 to 5.0 %, more preferably from 0.5 to 3.5 % by weight of the resultant mixture.
  • Figs. 1 - 7 illustrate the structure of the substrate and layers in the formation of a composite mask in accordance with the method of the present invention, as well as the utilization of the composition mixture for lift-off masking purposes. Also associated with each Fig. is a method step which describes the associated operation.
  • a substrate 10 which in the preferred specific embodiment is an integrated circuit semiconductor device containing numerous active and passive semiconductor elements and an overlying insulating layer, as for example SiO2. None of this structure is illustrated in substrate 10 since it does not constitute any part of the invention.
  • substrate 10 could also be a ceramic substrate used in packaging of semiconductor devices where it is desired to form a fine definition metallurgy line pattern on the surface thereof.
  • substrate 10 could also be a semiconductor wafer in the process of being fabricated into an integrated circuit semiconductor device.
  • the masking composition of this invention could also be used to form ion implantation masks used to define areas where the ions are implanted into the silicon or semiconductor substrate.
  • the first step in the process is to spin and cure a sacrificial masking layer 12.
  • Layer 12 is formed by initially preparing a mixture of a resin of a polyaryl sulfone polymer and an additive that prevents further chemical reaction, i.e. cross-linking, when exposed to high intensity radiation.
  • the polyaryl sulfone polymer resin suitable for use in the practice of the invention is commercially available and sold under the trademark of polysulfone 100P by ICI.
  • the polyaryl sulfone material has a monomer unit of one of the following: where x, y are methyl, ethyl, or ⁇ -branched alkyl groups of 3 carbon atoms,
  • the additives used in forming a mixture are described in U.S. Patent 3,644,482.
  • the additive compound has the following formula wherein R1 is a methyl, ethyl, or an ⁇ -branched alkyl group of from 3 to 10 carbon atoms, R2 is a hydrogen, methyl, ethyl, or an ⁇ -branched alkyl group of from 3 to 10 atoms, X has a value of from 1 to 6 and Z is an aliphatic hydrocarbon of the formula C5H8.
  • the most preferred additive compound is sold under the trademark Irganox 1010 by Ciba-Geigy.
  • the chemical name for the additive is tetrakis[methylene 3-(3',5'-di-tert-butyl-4'-hydroxyphenyl propionate]methane.
  • the preferred amount of the additive is in the range of 0.1 % to 5.0 %, more preferably from 0.5 to 3.5 % by weight of the resultant mixture.
  • the resultant mixture of polyaryl sulfone polymer and additive is mixed and spun on the surface of substrate 10 resulting in a layer having a thickness in the range of 500 nm to 20 ⁇ m. In order to cure the layer 12, the substrate is heated at 250°C for a time on the order of 30 minutes. Next, as indicated in Fig.
  • an oxygen reactive ion etchable barrier layer 14 is deposited on the top surface of layer 12.
  • the barrier layer 14 is typically a layer of SiO2 or Si3N4 having a thickness in the range of 50 nm to 400 nm which can be deposited by sputter deposition or a chemical vapor deposition techniques which are well known in the semiconductor fabrication technology.
  • an additional layer (not shown) can be formed between the layers 12 and 14.
  • the polyaryl sulfone layer 12 can be relatively thin, and another resin layer deposited.
  • the layer 12 is generally considered a release layer, and the overlying resin layer provided for thermal stability.
  • a resist layer 16 is deposited on the top surface of layer 14.
  • the resist can be of any suitable type as for example a material sold under the trademark AZ 1350 J comprised of a novolak-type phenol formaldehyde resin and a photosensitive cross-linking agent that is commercially available from Shipley Corporation.
  • Resist layer 16 is then exposed and developed to form the reverse image of the desired metallurgy pattern.
  • the opening 17 in layer 16 depicts the desired metallurgy pattern.
  • an opening 18 is formed in barrier layer 14 by any suitable technique using the resist layer 16 to define the opening. Opening 18 can be formed by reactive ion etching in a CF4 plasma.
  • opening 20 is formed in the sacrificial masking layer 12 preferably such that the opening undercuts the layer 14 as indicated in Fig. 5. Opening 20 can conveniently be formed by reactive ion etching in an oxygen atmosphere. At the same time that the opening 20 is formed, the remaining portions of layer 16 are also removed.
  • a blanket layer 22 of metal is deposited on the top surface of layer 14. Over opening 18 in layer 14 the metal layer is deposited directly on the top surface of substrate 10. The overhang of layer 14 permits the metal stripe 24 to be formed out of contact with the sidewalls of sacrificial masking layer 12.
  • Layer 22 can be any suitable metal deposited by any suitable technique. A convenient method for depositing metal layer 22 is by evaporation of the metal where the source metal is heated and evaporated by an electron beam while contained in a water-cooled container.
  • sacrificial masking layer 12 is removed along with all the overlying layers leaving stripe 24 bonded directly to substrate 10. Layer 12 is removed by subjecting it to a solvent that dissolves the material at a relatively rapid rate without significantly adversely affecting the remaining element on the substrate.
  • the masking layer 12 is unique in that it is chemically stable even though exposed to high intensity radiation. Radiation is encountered in many of the steps normally used to fabricate semiconductor devices. As for example, sputter deposition, as suggested for depositing layer 14, results in a significant exposure of radiation. The reactive sputter etching operation used to form openings 18 and 20 in layers 12 and 14 also result in a significant amount of radiation. Still further the deposition of metal layers 22 when done by evaporation where the source is heated by an electron beam also results in radiation. Alternately, if the layer were deposited by sputter deposition, radiation would be produced. It has been noted that radiation of an organic layer used for masking purposes will deteriorate the layer by causing oxidation and cracking.
  • polysulfone material is resistant to this type of deterioration.
  • such material is prone to cross-linking when exposed to radiations which makes the material very difficult to dissolve at the final steps of the operation.
  • the layer 12 is protected on the top and bottom sides by the layers 14 and 22 and on the bottom by substrate 10.
  • Layer 12 is essentially exposed to the solvent only through the opening made for fashioning the metallurgy stripe 24. Any cross-linking of the material of layer 12 will materially decrease the rate at which it dissolves, thus lengthening the time necessary for removal of the layer.
  • any suitable solvent can be used to dissolve layer 12.
  • the preferred solvents for dissolving the polyaryl sulfone mixture are 1-methyl-2-pyrrolidinone, methylene-chloride, chloroform, butanoic-acid-4-hydroxylactone, N,N-dimethylformamide, and dimethylsulfoxide.
  • Irganox 1010 A mixture of 20 parts by weight of ICI polyaryl sulfone 100P in normal methyl-pyrrolidinone was prepared. Several solutions were then made with varying weight percentages of additive Irganox 1010. The chemical formula for Irganox 1010 is tetrakis[methylene-3-(3', 5'-di-tert-butyl-4'-hydroxyphenyl) propionate]methane. These solutions were prepared with 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.8, 1.0, 1.5, 2.0, 2.5, 5.0 and 6.0 % by weight of additive Irganox 1010. These solutions were used to make a film which served as lift-off layers in microelectronic fabrication. These structures were made in the following manner. Each mixture of polyaryl sulfone and Irganox 1010 was spun onto silicon substrates to produce film thicknesses of 2.0 micrometers.
  • the samples were baked at 85° for 5 minutes and 250° for 20 minutes to thoroughly remove the solvent.
  • Silicon oxide was deposited on the film by plasma and chemical vapor deposition to a thickness of 200 nm.
  • a layer of high contrast photoresist was spun onto the silicon oxide surface to produce a thickness of one micron.
  • a pattern was optically exposed and developed into the resist layer using a suitable developer.
  • the pattern was transferred into the under layers by a reactive ion etching process, by first etching in a CF4 plasma to etch the silicon oxide layer and then in O2 to etch the underlying sacrificial polyaryl sulfone layer.
  • the resist patterned substrates were then placed in a high vacuum electron beam metallization evaporator.
  • the system was pumped down to a pressure of 1.3x10 ⁇ 5Pa(0.00013 ⁇ bar). Prior to evaporation the samples were heated to 160° and maintained at the temperature for the duration of the evaporation. 1.75 micrometers of aluminum-copper was then evaporated at a rate of 2 nm per second. The samples were removed from the evaporator after they cooled down to room temperature.
  • a discontinuity of the deposited metal layer distinguishes the areas of the metal film which will be lifted off from those that remain on the substrate to form the circuit pattern.
  • Lift-off of the polyaryl sulfone underlayer was achieved by soaking the samples at 80°C in normal methyl-pyrrolidinone. The lift-off time was the time required in the solvent to effect a complete removal of the sacrificial polyaryl sulfone layer and all of the overlying layers, i.e. the SiO2 and AlCu layer areas.
  • the lift-off times for complete removal of the polyaryl sulfone layer and overlying layers for each sample were recorded and are as follows:
  • the lift-off time was reduced considerably with the addition of the additive Irganox 1010 to polyaryl sulfone in the range of 0.5 to about 4 percent by weight.
  • the table indicates the lift-off time which directly related to the solubility of the polyaryl sulfone sacrificial masking layer is reduced considerably with the addition of Irganox 1010 to the polyaryl sulfone polymer layer.
  • the optimum range is to be from 1 to 2 % by weight of the additives.
  • large amounts of the additive are as ineffective as none.
  • the example indicates that there is a critical range of the additive in the polyaryl sulfone mixture.
  • Irganox 1093 has the chemical formula o,o-di-n-octadecyl-3,5-di-tert-butyl-4-hydroxybenzylphosphonate.
  • Samples with the additive compositions listed below were prepared in the manner described in Example I.
  • the polyaryl sulfone and Irganox 1093 formed the sacrificial masking layer. All of the processing steps were identical to that described in Example I. The lift-off time for each sample is set forth in the table.
  • Irganox 1093 had no beneficial effect in preserving the chemical stability of the film, i.e. preventing cross-linking, which is directly related to the solubility. Note that the polyaryl sulfone with no additives is identical to the remaining samples with different amounts of additives.
  • Irganox 1035 A mixture of ICI polysulfone 100P in normal methylpyrrolidinone was added to Irganox 1035 to form a number of mixtures of varying additive.
  • Irganox 1035 has the following chemical formula: thiodiethylene-bis-(3,5-di-tert-butyl-4-hydroxy)hydrocinnamate.
  • Example II Samples were prepared with the percentages of additive, by weight, listed below in the manner described in Example I where the polyaryl sulfone and Irganox 1035 formed the underlayers. All the processing steps were identical to that set forth in Example 1. The lift-off times for each sample is noted below: As the table indicates, the Irganox 1035 had no beneficial effect in preventing cross-linking of the underlayer as indicated by the solubility, exposed to high intensity radiation.
  • the additive Irganox 1010 did not reduce the lift-off times when used with Shipley AZ 1350 J resist as an underlayer. This example illustrates the selectivity of the additive to only polyaryl sulfone polymers for providing a resistance to cross linking.
  • the combination of the preferred additive with a resist polymer other than polyaryl sulfone did not produce any beneficial effect in reduction of solubility over the range tested when exposed to high intensity radiation.
  • composition of the invention of a polyaryl sulfone polymer with the aforedescribed additive produces an unexpected and beneficial result over a relatively narrow range of weight ratios.
  • Examples II and III indicate that the preferred polyaryl sulfone when combined with different but generally similar additives does not reduce cross linking. Also the preferred additive when combined with another resin other than polyaryl sulfone does not produce applicant's beneficial and unexpected results.

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Claims (9)

  1. Procédé d'arrachement pour déposer un motif de métallisation sur un substrat, caractérisé en ce qu'il comprend les étapes suivantes:
    préparation d'un mélange de résines qui est stable dans des environnements de radiation à intensité élevée, ce mélange comprenant un polymère de type polyaryl sulfone et un composé de formule:
    Figure imgb0012
     dans laquelle R₁ est un groupe méthyle, éthyle ou alkyle α-ramifié de 3 à 10 atomes de carbone, R₂ est un atome d'hydrogène, un groupe méthyle, éthyle ou alkyle α-ramifié ayant de 3 à 10 atomes de carbone, X a une valeur de 1 à 6, et Z est un hydrocarbure aliphatique de formule C₅H₈, ce composé étant présent dans le mélange en une quantité comprise entre 0,1 et 5,0% en poids du mélange;
    dépôt d'une couche de couverture de ce mélange sur la surface de ce substrat et chauffage pour polymériser ainsi la souche de couverture;
    élimination sélective des zones de cette couche de couverture pour définir l'image inverse du motif de métallisation désiré;
    dépôt d'une couche de couverture de métal sur la surface de cette couche polymérisée et de ce substrat;
    exposition du substrat résultant en couches à un solvant pour la couche de polymère de type polyaryle sulfone, de façon à éliminer la couche et les zones de la couche de métal de recouvrement, mais laisser les zones de la couche métallique en contact avec ce substrat.
  2. Procédé suivant la revendication 1, caractérisé en ce que le monomère de cette polyaryl sulfone est choisi dans le groupe comprenant les composés suivants:
    Figure imgb0013
     où X et Y sont un groupe méthyle, éthyl ou alkyle α-ramifié ayant 3 atomes de carbone, et leurs mélanges.
  3. Procédé suivant la revendication 1, caractérisé en ce que le composé est le tétrakis[méthylène-3-[3',5'-di-t-butyl-4'-hydroxyphényl]propionate]méthane.
  4. Procédé suivant la revendication 1, caractérisé en ce qu'une couche de couverture d'un matériau organique choisi dans le groupe comprenant SiO₂, Si₃N₄ et leurs mélanges, est déposée sur cette couche de couverture polymérisée, et que des zones sélectionnées sont éliminées pour définir un motif de métallisation.
  5. Procédé suivant la revendication 1, caractérisé en ce que le solvant pour la couche de polymère de type polyaryl sulfone est choisi dans le groupe comprenant la 1-méthyl-2-pyrrolidinone, le chlorure de méthylène, le chloroforme, la 4-hydroxylactone d'acide butanoïque, le N,N-diméthylformamide, le diméthylsulfoxyde et leurs mélanges.
  6. Procédé suivant la revendication 1, caractérisé en ce que le composé est présent dans ce mélange en une quantité comprise dans la gamme de 0,5 à 3,5%, plus avantageusement de 1 à 2% en poids du mélange résultant.
  7. Composition utile en tant que matériau de masquage qui est stable dans des environnements de radiation à intensité élevée, caractérisée en ce qu'elle comprend une résine d'un polymère de type polyaryl sulfone et un composé de formule :
    Figure imgb0014
     dans laquelle R₁ est un groupe méthyle, éthyle ou alkyle α-ramifié de 3 à 10 atomes de carbone, R₂ est un atome d'hydrogène, un groupe méthyle, éthyle ou alkyle α-ramifié ayant de 3 à 10 atomes de carbone, X a une valeur de 1 à 6, et Z est un hydrocarbure aliphatique de formule C₅H₈, ce composé étant présent dans le mélange en une quantité comprise entré 0,1 et 5,0% en poids de la composition.
  8. Composition suivant la revendication 7, caractérisée en ce que le monomère de cette polyaryl sulfone est choisi dans le groupe comprenant les composés suivants:
    Figure imgb0015
     où X et Y sont un groupe méthyle, éthyl ou alkyle α-ramifié ayant 3 atomes de carbone, et leurs mélanges.
  9. Composition suivant la revendication 8, caractérisée en ce que ce composé est le tétrakis[méthylène-3-[3',5'-di-t-butyl-4'-hydroxyphényl)propionate]méthane.
EP84107042A 1983-06-27 1984-06-20 Procédé d'arrachement et composition pour ce procédé Expired EP0132585B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/508,210 US4606931A (en) 1983-06-27 1983-06-27 Lift-off masking method
US508210 1990-04-12

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EP0132585A2 EP0132585A2 (fr) 1985-02-13
EP0132585A3 EP0132585A3 (en) 1987-09-30
EP0132585B1 true EP0132585B1 (fr) 1991-09-04

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EP (1) EP0132585B1 (fr)
JP (1) JPS608360A (fr)
DE (1) DE3485005D1 (fr)

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US4778739A (en) * 1986-08-25 1988-10-18 International Business Machines Corporation Photoresist process for reactive ion etching of metal patterns for semiconductor devices
US5258264A (en) * 1989-07-06 1993-11-02 International Business Machines Corporation Process of forming a dual overhang collimated lift-off stencil with subsequent metal deposition
JPH06204162A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 半導体装置の製造方法および該方法に用いられるレジスト組成物
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5883011A (en) * 1997-06-18 1999-03-16 Vlsi Technology, Inc. Method of removing an inorganic antireflective coating from a semiconductor substrate
US6712845B2 (en) * 2001-04-24 2004-03-30 Advanced Cardiovascular Systems, Inc. Coating for a stent and a method of forming the same
GB2395365B8 (en) * 2002-11-13 2006-11-02 Peter Leslie Moran Electrical circuit board
DE102004024461A1 (de) * 2004-05-14 2005-12-01 Konarka Technologies, Inc., Lowell Vorrichtung und Verfahren zur Herstellung eines elektronischen Bauelements mit zumindest einer aktiven organischen Schicht
US20090133908A1 (en) * 2007-11-28 2009-05-28 Goodner Michael D Interconnect structure for a microelectronic device, method of manfacturing same, and microelectronic structure containing same
US8734659B2 (en) * 2008-10-09 2014-05-27 Bandgap Engineering Inc. Process for structuring silicon
US20110117387A1 (en) * 2009-11-17 2011-05-19 Shivaraman Ramaswamy Method for producing metal nanodots

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US3644482A (en) * 1961-10-30 1972-02-22 Geigy Ag J R (4-hydroxy-5-alkylphenyl) alkanoic acid esters of polyols
US3285855A (en) * 1965-03-11 1966-11-15 Geigy Chem Corp Stabilization of organic material with esters containing an alkylhydroxy-phenyl group
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
US4279986A (en) * 1977-06-01 1981-07-21 Nippon Electric Co., Ltd. Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization
US4202914A (en) * 1978-12-29 1980-05-13 International Business Machines Corporation Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
US4346125A (en) * 1980-12-08 1982-08-24 Bell Telephone Laboratories, Incorporated Removing hardened organic materials during fabrication of integrated circuits using anhydrous hydrazine solvent

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Publication number Publication date
US4606931A (en) 1986-08-19
JPS608360A (ja) 1985-01-17
EP0132585A2 (fr) 1985-02-13
JPH0368904B2 (fr) 1991-10-30
EP0132585A3 (en) 1987-09-30
DE3485005D1 (de) 1991-10-10

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