DK2840593T3 - Forbedret afbryderindretning og fremgangsmåde til fremstilling dertil - Google Patents
Forbedret afbryderindretning og fremgangsmåde til fremstilling dertil Download PDFInfo
- Publication number
- DK2840593T3 DK2840593T3 DK13778876.6T DK13778876T DK2840593T3 DK 2840593 T3 DK2840593 T3 DK 2840593T3 DK 13778876 T DK13778876 T DK 13778876T DK 2840593 T3 DK2840593 T3 DK 2840593T3
- Authority
- DK
- Denmark
- Prior art keywords
- switch device
- improved switch
- manufacture therefor
- therefor
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H01L29/4238—
-
- H01L29/401—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
-
- H01L29/4925—
-
- H01L29/513—
-
- H01L29/517—
-
- H01L29/518—
-
- H01L29/66462—
-
- H01L29/7783—
-
- H01L29/2003—
-
- H01L29/49—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210118172XA CN102709321A (zh) | 2012-04-20 | 2012-04-20 | 增强型开关器件及其制造方法 |
| PCT/CN2013/073432 WO2013155929A1 (zh) | 2012-04-20 | 2013-03-29 | 增强型开关器件及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2840593T3 true DK2840593T3 (da) | 2021-07-19 |
Family
ID=46901969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK13778876.6T DK2840593T3 (da) | 2012-04-20 | 2013-03-29 | Forbedret afbryderindretning og fremgangsmåde til fremstilling dertil |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9812540B2 (da) |
| EP (1) | EP2840593B1 (da) |
| CN (2) | CN108807526B (da) |
| DK (1) | DK2840593T3 (da) |
| SG (1) | SG11201406749WA (da) |
| WO (1) | WO2013155929A1 (da) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807526B (zh) | 2012-04-20 | 2021-12-21 | 苏州晶湛半导体有限公司 | 增强型开关器件及其制造方法 |
| US9070705B2 (en) * | 2013-03-15 | 2015-06-30 | Semiconductor Components Industries, Llc | HEMT semiconductor device and a process of forming the same |
| CN110854185A (zh) * | 2014-05-30 | 2020-02-28 | 台达电子工业股份有限公司 | 半导体装置 |
| US9613908B2 (en) * | 2014-12-15 | 2017-04-04 | Applied Materials, Inc. | Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications |
| TWI641133B (zh) * | 2015-03-31 | 2018-11-11 | 晶元光電股份有限公司 | 半導體單元 |
| DE102015212048A1 (de) | 2015-06-29 | 2016-12-29 | Robert Bosch Gmbh | Transistor mit hoher Elektronenbeweglichkeit |
| CN107230619A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 增强型氮化镓晶体管的制作方法 |
| JP6594272B2 (ja) * | 2016-09-02 | 2019-10-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
| CN106373884B (zh) * | 2016-09-08 | 2019-12-24 | 西安电子科技大学 | 复合栅介质GaN基绝缘栅高电子迁移率晶体管的制作方法 |
| US10510903B2 (en) * | 2016-11-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Impact ionization semiconductor device and manufacturing method thereof |
| CN110100313B (zh) * | 2017-06-09 | 2020-11-17 | 苏州晶湛半导体有限公司 | 一种增强型开关器件及其制造方法 |
| WO2020062221A1 (zh) * | 2018-09-30 | 2020-04-02 | 苏州晶湛半导体有限公司 | 一种半导体结构及其制造方法 |
| CN113892186B (zh) | 2019-03-26 | 2024-05-03 | 苏州晶湛半导体有限公司 | 一种半导体结构及其制造方法 |
| CN112310209A (zh) * | 2019-08-01 | 2021-02-02 | 广东美的白色家电技术创新中心有限公司 | 一种场效应晶体管及其制备方法 |
| US11978791B2 (en) | 2019-11-26 | 2024-05-07 | Enkris Semiconductor, Inc. | Semiconductor structures and manufacturing methods thereof |
| US20230053045A1 (en) * | 2020-03-19 | 2023-02-16 | Enkris Semiconductor, Inc. | Semiconductor structure and manufacturing method therefor |
| CN111739800B (zh) * | 2020-06-22 | 2021-08-10 | 中国科学院上海微系统与信息技术研究所 | 一种SOI基凹栅增强型GaN功率开关器件的制备方法 |
| CN111739801B (zh) * | 2020-06-22 | 2021-08-10 | 中国科学院上海微系统与信息技术研究所 | 一种SOI基p-GaN增强型GaN功率开关器件的制备方法 |
| CN113013242A (zh) * | 2021-01-29 | 2021-06-22 | 西安电子科技大学 | 基于n-GaN栅的p沟道GaN基异质结场效应晶体管 |
| CN115219578B (zh) * | 2022-07-20 | 2023-11-17 | 江南大学 | 一种用于检测新冠病毒的GaN传感器及检测方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
| CN100418199C (zh) | 2004-07-28 | 2008-09-10 | 中国科学院半导体研究所 | 铝镓氮/氮化镓高电子迁移率晶体管的制作方法 |
| JP4712459B2 (ja) * | 2005-07-08 | 2011-06-29 | パナソニック株式会社 | トランジスタ及びその動作方法 |
| US8482035B2 (en) * | 2005-07-29 | 2013-07-09 | International Rectifier Corporation | Enhancement mode III-nitride transistors with single gate Dielectric structure |
| JP4705481B2 (ja) * | 2006-01-25 | 2011-06-22 | パナソニック株式会社 | 窒化物半導体装置 |
| JP2007220895A (ja) * | 2006-02-16 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置およびその製造方法 |
| US7388236B2 (en) * | 2006-03-29 | 2008-06-17 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
| CN100424839C (zh) | 2006-07-21 | 2008-10-08 | 中国电子科技集团公司第五十五研究所 | 一种制造重掺杂氮化镓场效应晶体管的方法 |
| CN100555660C (zh) | 2006-09-01 | 2009-10-28 | 中国科学院半导体研究所 | 宽带隙氮化镓基异质结场效应晶体管结构及制作方法 |
| CN100433365C (zh) * | 2006-10-16 | 2008-11-12 | 中国电子科技集团公司第五十五研究所 | 铝镓氮化物/氮化镓高电子迁移率晶体管及制造方法 |
| CN100433364C (zh) | 2006-10-16 | 2008-11-12 | 中国电子科技集团公司第五十五研究所 | 复合缓冲层氮化物高电子迁移率晶体管外延结构及其制造方法 |
| US7851881B1 (en) * | 2008-03-21 | 2010-12-14 | Microsemi Corporation | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode |
| JP5597921B2 (ja) * | 2008-12-22 | 2014-10-01 | サンケン電気株式会社 | 半導体装置 |
| JP5487615B2 (ja) * | 2008-12-24 | 2014-05-07 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
| JP5564815B2 (ja) * | 2009-03-31 | 2014-08-06 | サンケン電気株式会社 | 半導体装置及び半導体装置の製造方法 |
| KR20120006510A (ko) * | 2009-04-08 | 2012-01-18 | 이피션트 파워 컨버젼 코퍼레이션 | 게이트 특성이 개선된 증가형 갈륨 나이트라이드 트랜지스터 |
| US8390000B2 (en) * | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
| TWI380377B (en) * | 2009-12-23 | 2012-12-21 | Intersil Inc | Methods for manufacturing enhancement-mode hemts with self-aligned field plate |
| US8901604B2 (en) * | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
| CN108807526B (zh) * | 2012-04-20 | 2021-12-21 | 苏州晶湛半导体有限公司 | 增强型开关器件及其制造方法 |
-
2012
- 2012-04-20 CN CN201810365883.4A patent/CN108807526B/zh active Active
- 2012-04-20 CN CN201210118172XA patent/CN102709321A/zh active Pending
-
2013
- 2013-03-29 US US14/395,338 patent/US9812540B2/en active Active
- 2013-03-29 DK DK13778876.6T patent/DK2840593T3/da active
- 2013-03-29 WO PCT/CN2013/073432 patent/WO2013155929A1/zh active Application Filing
- 2013-03-29 EP EP13778876.6A patent/EP2840593B1/en active Active
- 2013-03-29 SG SG11201406749WA patent/SG11201406749WA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2840593B1 (en) | 2021-05-05 |
| WO2013155929A1 (zh) | 2013-10-24 |
| EP2840593A1 (en) | 2015-02-25 |
| CN108807526A (zh) | 2018-11-13 |
| US9812540B2 (en) | 2017-11-07 |
| CN102709321A (zh) | 2012-10-03 |
| CN108807526B (zh) | 2021-12-21 |
| SG11201406749WA (en) | 2014-11-27 |
| US20150053921A1 (en) | 2015-02-26 |
| EP2840593A4 (en) | 2015-12-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DK2840593T3 (da) | Forbedret afbryderindretning og fremgangsmåde til fremstilling dertil | |
| DK2900657T3 (da) | Cykliske etherpyrazol-4-yl-heterocyclyl-carboxamidforbindelser og fremgangsmåder til anvendelse | |
| DK3550836T3 (da) | Fremgangsmåde og anordning til afkodning | |
| DK2872153T3 (da) | Accellulære pro-tolerogene sammensætninger og fremgangsmåde til fremstilling heraf | |
| DK2929031T5 (da) | Pcsk9-irna-sammensætninger og fremgangsmåder til anvendelse deraf | |
| DK3009021T3 (da) | Handske og fremgangsmåde til fremstilling deraf | |
| DK2941220T3 (da) | Anordning og fremgangsmåde til subgingival måling | |
| DK3019200T3 (da) | Oligonukleotid-ligand-konjugater og fremgangsmåde til fremstiling deraf | |
| DK2914575T3 (da) | Plasminogen-aktivator-1-inhibitorer og fremgangsmåder til anvendelse deraf | |
| DK3489254T3 (da) | Målrettede/immunmodulatoriske fusionsproteiner og fremgangsmåder til fremstilling deraf | |
| DK2850202T3 (da) | Fremgangsmåder og grupper | |
| DK3355539T3 (da) | Fremgangsmåder og indretninger til kanalestimering | |
| DK2884999T3 (da) | Fremgangsmåde og sammensætninger til cellulær immunterapi | |
| DK2675827T3 (da) | Hidtil ukendte modulatorer og fremgangsmåder til anvendelse | |
| DK2844292T3 (da) | ST2L-antagonister og fremgangsmåder til anvendelse | |
| BR112014032228A2 (pt) | dispositivo e método de codificação | |
| DK2521221T4 (da) | Høreanordning og fremgangsmåde | |
| BR112015007125A2 (pt) | aparelho e método | |
| DK3197164T3 (da) | Afkodningsanordning og afkodningsfremgangsmåde | |
| DK3930322T3 (da) | Fremgangsmåder og anordninger til kodning | |
| DK2706338T3 (da) | Detekteringsanordning og fremgangsmåde | |
| BR112014020761A2 (pt) | Aparelho médico e método | |
| DK3071248T3 (da) | Vævsstilladsmateriale til vævsregenerering og fremgangsmåder til fremstilling | |
| DK2964767T3 (da) | Toksingener og fremgangsmåder til anvendelse deraf | |
| DK2633914T3 (da) | Pipetteringsindretning og fremgangsmåde til fremstilling deraf |