DK136805B - Method for crucible zone melting of a crystalline rod. - Google Patents
Method for crucible zone melting of a crystalline rod.Info
- Publication number
- DK136805B DK136805B DK400567AA DK400567A DK136805B DK 136805 B DK136805 B DK 136805B DK 400567A A DK400567A A DK 400567AA DK 400567 A DK400567 A DK 400567A DK 136805 B DK136805 B DK 136805B
- Authority
- DK
- Denmark
- Prior art keywords
- zone melting
- crystalline rod
- crucible zone
- crucible
- crystalline
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0106092 | 1966-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
DK136805B true DK136805B (en) | 1977-11-28 |
DK136805C DK136805C (en) | 1978-05-16 |
Family
ID=7527124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK400567AA DK136805B (en) | 1966-09-24 | 1967-08-07 | Method for crucible zone melting of a crystalline rod. |
Country Status (6)
Country | Link |
---|---|
US (1) | US3585008A (en) |
BE (1) | BE704005A (en) |
DE (1) | DE1519903A1 (en) |
DK (1) | DK136805B (en) |
GB (1) | GB1191166A (en) |
NL (1) | NL6710709A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1542868A (en) * | 1975-11-14 | 1979-03-28 | Siemens Ag | Production of phosphorus-doped monocrystalline silicon rods |
US5207863A (en) * | 1990-04-06 | 1993-05-04 | Canon Kabushiki Kaisha | Crystal growth method and crystalline article obtained by said method |
-
1966
- 1966-09-24 DE DE19661519903 patent/DE1519903A1/en active Pending
-
1967
- 1967-08-03 NL NL6710709A patent/NL6710709A/xx unknown
- 1967-08-07 DK DK400567AA patent/DK136805B/en unknown
- 1967-09-18 BE BE704005D patent/BE704005A/xx unknown
- 1967-09-22 US US669968A patent/US3585008A/en not_active Expired - Lifetime
- 1967-09-22 GB GB43362/67A patent/GB1191166A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1191166A (en) | 1970-05-06 |
DE1519903A1 (en) | 1970-02-12 |
BE704005A (en) | 1968-03-18 |
US3585008A (en) | 1971-06-15 |
NL6710709A (en) | 1968-03-25 |
DK136805C (en) | 1978-05-16 |
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