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DK136805B - Method for crucible zone melting of a crystalline rod. - Google Patents

Method for crucible zone melting of a crystalline rod.

Info

Publication number
DK136805B
DK136805B DK400567AA DK400567A DK136805B DK 136805 B DK136805 B DK 136805B DK 400567A A DK400567A A DK 400567AA DK 400567 A DK400567 A DK 400567A DK 136805 B DK136805 B DK 136805B
Authority
DK
Denmark
Prior art keywords
zone melting
crystalline rod
crucible zone
crucible
crystalline
Prior art date
Application number
DK400567AA
Other languages
Danish (da)
Other versions
DK136805C (en
Inventor
Wolfgang Keller
Herbert Kramer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK136805B publication Critical patent/DK136805B/en
Application granted granted Critical
Publication of DK136805C publication Critical patent/DK136805C/da

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK400567AA 1966-09-24 1967-08-07 Method for crucible zone melting of a crystalline rod. DK136805B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106092 1966-09-24

Publications (2)

Publication Number Publication Date
DK136805B true DK136805B (en) 1977-11-28
DK136805C DK136805C (en) 1978-05-16

Family

ID=7527124

Family Applications (1)

Application Number Title Priority Date Filing Date
DK400567AA DK136805B (en) 1966-09-24 1967-08-07 Method for crucible zone melting of a crystalline rod.

Country Status (6)

Country Link
US (1) US3585008A (en)
BE (1) BE704005A (en)
DE (1) DE1519903A1 (en)
DK (1) DK136805B (en)
GB (1) GB1191166A (en)
NL (1) NL6710709A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method

Also Published As

Publication number Publication date
GB1191166A (en) 1970-05-06
DE1519903A1 (en) 1970-02-12
BE704005A (en) 1968-03-18
US3585008A (en) 1971-06-15
NL6710709A (en) 1968-03-25
DK136805C (en) 1978-05-16

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