DE69100590D1 - Fraktionen von Hydrogensilsesquioxanharz und deren Verwendung als Beschichtungsstoffe. - Google Patents
Fraktionen von Hydrogensilsesquioxanharz und deren Verwendung als Beschichtungsstoffe.Info
- Publication number
- DE69100590D1 DE69100590D1 DE91310448T DE69100590T DE69100590D1 DE 69100590 D1 DE69100590 D1 DE 69100590D1 DE 91310448 T DE91310448 T DE 91310448T DE 69100590 T DE69100590 T DE 69100590T DE 69100590 D1 DE69100590 D1 DE 69100590D1
- Authority
- DE
- Germany
- Prior art keywords
- coating materials
- hydrogen silsesquioxane
- silsesquioxane resin
- resin fractions
- fractions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 title 1
- 239000011347 resin Substances 0.000 title 1
- 229920005989 resin Polymers 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/32—Post-polymerisation treatment
- C08G77/36—Fractionation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
- C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Ceramic Products (AREA)
- Catalysts (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/618,865 US5063267A (en) | 1990-11-28 | 1990-11-28 | Hydrogen silsesquioxane resin fractions and their use as coating materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69100590D1 true DE69100590D1 (de) | 1993-12-09 |
| DE69100590T2 DE69100590T2 (de) | 1994-05-11 |
Family
ID=24479445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE91310448T Expired - Lifetime DE69100590T2 (de) | 1990-11-28 | 1991-11-13 | Fraktionen von Hydrogensilsesquioxanharz und deren Verwendung als Beschichtungsstoffe. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5063267A (de) |
| EP (1) | EP0493879B1 (de) |
| JP (1) | JPH04275337A (de) |
| KR (1) | KR960007346B1 (de) |
| CA (1) | CA2055306C (de) |
| DE (1) | DE69100590T2 (de) |
| ES (1) | ES2047987T3 (de) |
| TW (1) | TW218858B (de) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
| JP2844896B2 (ja) * | 1990-10-17 | 1999-01-13 | 信越化学工業株式会社 | 耐熱性絶縁塗料 |
| US5445894A (en) * | 1991-04-22 | 1995-08-29 | Dow Corning Corporation | Ceramic coatings |
| US5436029A (en) * | 1992-07-13 | 1995-07-25 | Dow Corning Corporation | Curing silicon hydride containing materials by exposure to nitrous oxide |
| CA2100277A1 (en) * | 1992-07-20 | 1994-01-21 | Loren Andrew Haluska | Sealing porous electronic substrates |
| US5310583A (en) * | 1992-11-02 | 1994-05-10 | Dow Corning Corporation | Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide |
| JP3153367B2 (ja) * | 1992-11-24 | 2001-04-09 | ダウ・コ−ニング・コ−ポレ−ション | ポリハイドロジェンシルセスキオキサンの分子量分別方法 |
| US5492958A (en) * | 1993-03-08 | 1996-02-20 | Dow Corning Corporation | Metal containing ceramic coatings |
| US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
| TW492989B (en) * | 1993-03-19 | 2002-07-01 | Dow Corning | Stabilization of hydrogen silsesquioxane resin solutions |
| US5320868A (en) * | 1993-09-13 | 1994-06-14 | Dow Corning Corporation | Method of forming SI-O containing coatings |
| US5441765A (en) * | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
| WO1995018190A1 (fr) * | 1993-12-27 | 1995-07-06 | Kawasaki Steel Corporation | Film isolant pour dispositifs a semi-conducteurs, fluide de revetement utilise pour former le film et procede de production dudit film |
| US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
| MX9504934A (es) * | 1994-12-12 | 1997-01-31 | Morton Int Inc | Revestimientos en polvo de pelicula delgada lisa. |
| US5501875A (en) | 1994-12-27 | 1996-03-26 | Dow Corning Corporation | Metal coated silica precursor powders |
| JPH08245792A (ja) * | 1995-03-10 | 1996-09-24 | Mitsubishi Electric Corp | シリコーンラダーポリマー、シリコーンラダープレポリマーおよびそれらの製造方法 |
| US5618878A (en) * | 1995-04-07 | 1997-04-08 | Dow Corning Corporation | Hydrogen silsesquioxane resin coating composition |
| US5635240A (en) * | 1995-06-19 | 1997-06-03 | Dow Corning Corporation | Electronic coating materials using mixed polymers |
| US5985229A (en) * | 1995-09-21 | 1999-11-16 | Toagosei Co., Ltd. | Solid silica derivative and process for producing the same |
| US5609925A (en) | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
| US6075074A (en) | 1996-07-19 | 2000-06-13 | Morton International, Inc. | Continuous processing of powder coating compositions |
| US5766522A (en) * | 1996-07-19 | 1998-06-16 | Morton International, Inc. | Continuous processing of powder coating compositions |
| US6583187B1 (en) | 1996-07-19 | 2003-06-24 | Andrew T. Daly | Continuous processing of powder coating compositions |
| US6114414A (en) * | 1996-07-19 | 2000-09-05 | Morton International, Inc. | Continuous processing of powder coating compositions |
| US5711987A (en) * | 1996-10-04 | 1998-01-27 | Dow Corning Corporation | Electronic coatings |
| US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
| US5807611A (en) * | 1996-10-04 | 1998-09-15 | Dow Corning Corporation | Electronic coatings |
| US20100273011A1 (en) * | 1996-12-20 | 2010-10-28 | Bianxiao Zhong | Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates |
| DE19654488A1 (de) * | 1996-12-27 | 1998-07-02 | Sueddeutsche Kalkstickstoff | Verfahren zur Fraktionierung viscoser Silicone |
| US5707681A (en) * | 1997-02-07 | 1998-01-13 | Dow Corning Corporation | Method of producing coatings on electronic substrates |
| EP0860462A3 (de) * | 1997-02-24 | 1999-04-21 | Dow Corning Toray Silicone Company Limited | Zusammensetzung und Verfahren zur Erzeugung dünner Siliciumdioxidfilme |
| US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
| US6043330A (en) * | 1997-04-21 | 2000-03-28 | Alliedsignal Inc. | Synthesis of siloxane resins |
| US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
| US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
| TW392288B (en) | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
| US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
| US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
| US5906859A (en) * | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
| US6340722B1 (en) | 1998-09-04 | 2002-01-22 | The University Of Akron | Polymerization, compatibilized blending, and particle size control of powder coatings in a supercritical fluid |
| DE19848474C1 (de) * | 1998-10-21 | 2000-01-13 | Bosch Gmbh Robert | Verfahren und Vorrichtung zur Herstellung keramischer Formkörper mittels Setterplatten und Verendung des Verfahrens zur Herstellung keramischer Mehrschichthybride |
| JP2003502449A (ja) * | 1999-06-10 | 2003-01-21 | ハネウエル・インターナシヨナル・インコーポレーテツド | フォトリソグラフィ用スピンオンガラス反射防止コーティング |
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| US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
| US6572974B1 (en) | 1999-12-06 | 2003-06-03 | The Regents Of The University Of Michigan | Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins |
| US6143360A (en) * | 1999-12-13 | 2000-11-07 | Dow Corning Corporation | Method for making nanoporous silicone resins from alkylydridosiloxane resins |
| US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
| US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
| US7011868B2 (en) * | 2000-03-20 | 2006-03-14 | Axcelis Technologies, Inc. | Fluorine-free plasma curing process for porous low-k materials |
| US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
| US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
| US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| JP2001131479A (ja) * | 2000-10-30 | 2001-05-15 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用塗布液 |
| USH2219H1 (en) * | 2000-10-31 | 2008-07-01 | The United States Of America As Represented By The Secretary Of The Navy | Method for coating small particles |
| US6399210B1 (en) | 2000-11-27 | 2002-06-04 | Dow Corning Corporation | Alkoxyhydridosiloxane resins |
| US6756085B2 (en) * | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
| FR2830856B1 (fr) * | 2001-10-15 | 2004-07-30 | Pechiney Aluminium | Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire |
| FR2830857B1 (fr) * | 2001-10-15 | 2004-07-30 | Pechiney Aluminium | Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire |
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| CA2543366A1 (en) | 2003-08-01 | 2005-02-24 | Dow Corning Corporation | Silicone based dielectric coatings and films for photovoltaic applications |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| KR100534103B1 (ko) * | 2004-01-14 | 2005-12-06 | 삼성전자주식회사 | 초임계 유체를 이용한 미세 전자소자의 제조 방법 |
| DE602005014652D1 (de) | 2004-09-17 | 2009-07-09 | Dow Corning | Siloxanzusammensetzung, agglomerat und verfahren zur herstellung von agglomerat |
| WO2006049720A1 (en) | 2004-11-02 | 2006-05-11 | Dow Corning Corporation | Resist composition |
| JP4783117B2 (ja) * | 2005-10-21 | 2011-09-28 | 東レ・ダウコーニング株式会社 | シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置 |
| US8148043B2 (en) * | 2006-06-28 | 2012-04-03 | Dow Corning Corporation | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
| US8524439B2 (en) | 2006-06-28 | 2013-09-03 | Dow Corning Corporation | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
| CN101501139B (zh) | 2006-08-04 | 2011-08-17 | 陶氏康宁公司 | 硅氧烷树脂和硅氧烷组合物 |
| CN101600664B (zh) * | 2006-12-20 | 2013-02-06 | 陶氏康宁公司 | 用多层固化的有机硅树脂组合物涂覆或层合的玻璃基材 |
| CN101563300B (zh) * | 2006-12-20 | 2012-09-05 | 陶氏康宁公司 | 用固化的有机硅树脂组合物涂布或层压的玻璃基底 |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| CN101959939B (zh) * | 2008-03-04 | 2013-02-06 | 陶氏康宁公司 | 硼硅氧烷组合物，硼硅氧烷粘合剂，涂布和层压的基底 |
| US20110027584A1 (en) * | 2008-03-04 | 2011-02-03 | Bianxiao Zhong | Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates |
| KR20110013509A (ko) * | 2008-05-27 | 2011-02-09 | 다우 코닝 코포레이션 | 접착 테이프 및 접합 유리 |
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| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| CN103201327A (zh) | 2010-11-09 | 2013-07-10 | 道康宁公司 | 以有机磷化合物增塑的硅氢加成固化的有机硅树脂 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US9480977B2 (en) | 2011-09-20 | 2016-11-01 | Dow Corning Corporation | Ruthenium containing hydrosilylation catalysts and compositions containing the catalysts |
| CN103842368B (zh) | 2011-09-20 | 2017-02-22 | 道康宁公司 | 含铱硅氢加成催化剂及含有该催化剂的组合物 |
| US9545624B2 (en) | 2011-09-20 | 2017-01-17 | Dow Corning Corporation | Nickel containing hydrosilylation catalysts and compositions containing the catalysts |
| JP6117233B2 (ja) | 2011-12-01 | 2017-04-19 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | ヒドロシリル化反応触媒及び硬化性組成物並びにこれらの調製及び使用方法 |
| US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
| JP6557248B2 (ja) | 2014-04-09 | 2019-08-07 | ダウ シリコーンズ コーポレーション | 疎水性物品 |
| WO2015164068A2 (en) | 2014-04-09 | 2015-10-29 | Dow Corning Corporation | Optical element |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| KR102567687B1 (ko) | 2015-06-17 | 2023-08-18 | 주식회사 다이셀 | 경화성 조성물 |
| CN108779366B (zh) | 2016-02-19 | 2020-09-22 | 美国陶氏有机硅公司 | 老化的聚合物型倍半硅氧烷 |
| FI128886B (en) * | 2019-02-25 | 2021-02-26 | Pibond Oy | Functional hydrogen silicon oxane polymers and their uses |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
| JPS5710627A (en) * | 1980-06-24 | 1982-01-20 | Hitachi Chem Co Ltd | Preparation of polysiloxane with fractionated molecular weight |
| JP2513595B2 (ja) * | 1984-11-28 | 1996-07-03 | 富士通株式会社 | ラダ−型シリコン樹脂の分子量分別法 |
| US4723978A (en) * | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
| EP0255226A3 (de) * | 1986-06-26 | 1990-07-11 | Minnesota Mining And Manufacturing Company | Polysiloxankontaktklebstoff mit verbesserten Eigenschaften |
| EP0255303B1 (de) * | 1986-07-25 | 1989-10-11 | Oki Electric Industry Company, Limited | Negatives Resistmaterial, Methode zu seiner Herstellung und Methode zu seiner Verwendung |
| US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| JPH01203013A (ja) * | 1988-02-08 | 1989-08-15 | Fujitsu Ltd | 高分子化合物の分子量分別方法 |
| US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
| US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
-
1990
- 1990-11-28 US US07/618,865 patent/US5063267A/en not_active Expired - Lifetime
-
1991
- 1991-10-21 TW TW080108285A patent/TW218858B/zh not_active IP Right Cessation
- 1991-11-12 CA CA002055306A patent/CA2055306C/en not_active Expired - Fee Related
- 1991-11-13 DE DE91310448T patent/DE69100590T2/de not_active Expired - Lifetime
- 1991-11-13 EP EP91310448A patent/EP0493879B1/de not_active Expired - Lifetime
- 1991-11-13 ES ES91310448T patent/ES2047987T3/es not_active Expired - Lifetime
- 1991-11-19 JP JP3303095A patent/JPH04275337A/ja active Granted
- 1991-11-26 KR KR1019910021202A patent/KR960007346B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920009891A (ko) | 1992-06-25 |
| KR960007346B1 (ko) | 1996-05-31 |
| EP0493879A2 (de) | 1992-07-08 |
| EP0493879A3 (en) | 1992-09-30 |
| CA2055306C (en) | 1996-06-18 |
| TW218858B (de) | 1994-01-11 |
| ES2047987T3 (es) | 1994-03-01 |
| US5063267A (en) | 1991-11-05 |
| DE69100590T2 (de) | 1994-05-11 |
| EP0493879B1 (de) | 1993-11-03 |
| CA2055306A1 (en) | 1992-05-29 |
| JPH04275337A (ja) | 1992-09-30 |
| JPH0579693B2 (de) | 1993-11-04 |
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