DE69734509D1 - Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen - Google Patents

Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen

Info

Publication number: DE69734509D1
Authority: DE; Germany
Prior art keywords: volatile semiconductor; electrically programmable; cell matrix; memory cell; memory cells
Prior art date: 1997-07-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69734509T

Other languages

English (en)

Inventor

Federico Pio

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SRL

Original Assignee

STMicroelectronics SRL

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-07-08

Filing date

1997-07-08

Publication date

2005-12-08

1997-07-08 Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL

2005-12-08 Application granted granted Critical

2005-12-08 Publication of DE69734509D1 publication Critical patent/DE69734509D1/de

2017-07-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/383—Channel doping programmed
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

DE69734509T 1997-07-08 1997-07-08 Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen Expired - Lifetime DE69734509D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
EP97830342A EP0890985B1 (de)	1997-07-08	1997-07-08	Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen

Publications (1)

Publication Number	Publication Date
DE69734509D1 true DE69734509D1 (de)	2005-12-08

Family

ID=8230698

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69734509T Expired - Lifetime DE69734509D1 (de)	1997-07-08	1997-07-08	Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen

Country Status (4)

Country	Link
US (1)	US6259132B1 (de)
EP (1)	EP0890985B1 (de)
JP (1)	JPH1197653A (de)
DE (1)	DE69734509D1 (de)

Families Citing this family (23)

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US5673218A (en)	1996-03-05	1997-09-30	Shepard; Daniel R.	Dual-addressed rectifier storage device
DE69833247D1 (de)	1998-10-02	2006-04-06	St Microelectronics Srl	Verfahren zur Herstellung eines Mehrpegel ROM Speichers in einem Doppelgate CMOS Prozess und entsprechende ROM Speicherzelle
US6487106B1 (en) *	1999-01-12	2002-11-26	Arizona Board Of Regents	Programmable microelectronic devices and method of forming and programming same
EP1024527A3 (de) *	1998-12-31	2001-05-23	STMicroelectronics S.r.l.	Verfahren zur Herstellung eines mehrwertigen Festwertspeichers (ROM) durch ein Verfahren zur Herstellung eines EEPROM-Speichers
US6576517B1 (en)	1998-12-31	2003-06-10	Stmicroelectronics S.R.L.	Method for obtaining a multi-level ROM in an EEPROM process flow
US6956757B2 (en) *	2000-06-22	2005-10-18	Contour Semiconductor, Inc.	Low cost high density rectifier matrix memory
US6711043B2 (en)	2000-08-14	2004-03-23	Matrix Semiconductor, Inc.	Three-dimensional memory cache system
US6765813B2 (en)	2000-08-14	2004-07-20	Matrix Semiconductor, Inc.	Integrated systems using vertically-stacked three-dimensional memory cells
FR2826169A1 (fr)	2001-06-15	2002-12-20	St Microelectronics Sa	Memoire mos a lecture seulement
US6906376B1 (en) *	2002-06-13	2005-06-14	A Plus Flash Technology, Inc.	EEPROM cell structure and array architecture
US6768661B2 (en) *	2002-06-27	2004-07-27	Matrix Semiconductor, Inc.	Multiple-mode memory and method for forming same
JP3941943B2 (ja)	2003-03-12	2007-07-11	力旺電子股▲ふん▼有限公司	Ｒｏｍ
KR101160720B1 (ko)	2004-11-15	2012-06-28	엔엑스피 비 브이	플래시-ｒｏｍ 메모리 셀의 레이아웃 변환 방법, 반도체 소자 및 컴퓨터 프로그램을 포함하는 컴퓨터 판독 가능한 저장 매체
KR100725171B1 (ko) *	2006-01-06	2007-06-04	삼성전자주식회사	마스크 롬을 구비하는 반도체 장치 및 그 제조 방법
US7813157B2 (en) *	2007-10-29	2010-10-12	Contour Semiconductor, Inc.	Non-linear conductor memory
US20090225621A1 (en) *	2008-03-05	2009-09-10	Shepard Daniel R	Split decoder storage array and methods of forming the same
FR2931289A1 (fr) *	2008-05-13	2009-11-20	St Microelectronics Rousset	Memoire a structure du type eeprom et a lecture seule
US20090296445A1 (en) *	2008-06-02	2009-12-03	Shepard Daniel R	Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) *	2008-10-07	2012-12-04	Contour Semiconductor, Inc.	Sequencing decoder circuit
JP5483400B2 (ja) *	2009-03-26	2014-05-07	シチズンホールディングス株式会社	不揮発性半導体記憶装置
WO2016137720A1 (en) *	2015-02-27	2016-09-01	Silicon Storage Technology, Inc.	Array of non-volatile memory cells with rom cells
CN105990367B (zh)	2015-02-27	2019-03-12	硅存储技术公司	具有rom单元的非易失性存储器单元阵列
CN106158027B (zh)	2015-04-09	2020-02-07	硅存储技术公司	用于对分离栅式非易失性存储器单元编程的系统和方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07120720B2 (ja) *	1987-12-17	1995-12-20	三菱電機株式会社	不揮発性半導体記憶装置
US5122985A (en) *	1990-04-16	1992-06-16	Giovani Santin	Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
US5488006A (en) *	1990-09-20	1996-01-30	Mitsubishi Denki Kabushiki Kaisha	One-chip microcomputer manufacturing method
US5227326A (en) *	1991-12-23	1993-07-13	Texas Instruments Incorporated	Method for fabricating non-volatile memory cells, arrays of non-volatile memory cells
JPH0729999A (ja) *	1993-07-15	1995-01-31	Mitsubishi Electric Corp	不揮発性半導体記憶装置およびその製造方法
JP3238576B2 (ja) *	1994-08-19	2001-12-17	株式会社東芝	不揮発性半導体記憶装置
US5894146A (en) *	1995-02-28	1999-04-13	Sgs-Thomson Microelectronics, S.R.L.	EEPROM memory cells matrix with double polysilicon level and relating manufacturing process
US5990512A (en) *	1995-03-07	1999-11-23	California Institute Of Technology	Hole impact ionization mechanism of hot electron injection and four-terminal ρFET semiconductor structure for long-term learning
DE69528970D1 (de) *	1995-06-30	2003-01-09	St Microelectronics Srl	Herstellungsverfahren eines Schaltkreises, der nichtflüchtige Speicherzellen und Randtransistoren enthält, und entsprechender IC
FR2738089B1 (fr) *	1995-08-24	1997-10-31	Sgs Thomson Microelectronics	Dispositif de correction de linearite de rampes d'un signal en dents de scie et generateur d'un tel signal
US5631486A (en) *	1995-09-22	1997-05-20	United Microelectronics Corporation	Read-only-memory having both bipolar and channel transistors

1997
- 1997-07-08 DE DE69734509T patent/DE69734509D1/de not_active Expired - Lifetime
- 1997-07-08 EP EP97830342A patent/EP0890985B1/de not_active Expired - Lifetime
1998
- 1998-07-02 US US09/109,487 patent/US6259132B1/en not_active Expired - Lifetime
- 1998-07-03 JP JP18861598A patent/JPH1197653A/ja active Pending

Also Published As

Publication number	Publication date
EP0890985A1 (de)	1999-01-13
EP0890985B1 (de)	2005-11-02
JPH1197653A (ja)	1999-04-09
US6259132B1 (en)	2001-07-10

Publication	Publication Date	Title
DE69734509D1 (de)	2005-12-08	Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen
DE59915200D1 (de)	2010-10-21	Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung
IL125604A0 (en)	1999-03-12	Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge
DE69524645D1 (de)	2002-01-31	Speicherzelle mit programmierbarer Antischmelzsicherungstechnologie
IL134304A0 (en)	2001-04-30	Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
DE59804824D1 (de)	2002-08-22	Speicherzellenanordnung
AU6498894A (en)	1994-11-08	Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
IT1293644B1 (it)	1999-03-08	Circuito e metodo di lettura di celle di una matrice di memoria analogica, in particolare di tipo flash
AU9056398A (en)	1999-03-29	Non-volatile memory cell
DE69727581D1 (de)	2004-03-18	RAM-Speicherzelle mit niedriger Leistungsaufnahme
DE68910374D1 (de)	1993-12-09	Elektrisch programierbarer Speicher mit mehreren bits pro Zelle.
DE19980447D2 (de)	2001-04-12	Solarzellenanordnung
DE10085013T1 (de)	2002-10-31	Anordnen von in nicht-flüchtigen wiederprogrammierbaren Halbleiterspeichern gespeicherten Informationen
EP0914658A4 (de)	2000-03-22	Nichtflüchtige halbleiterspeicherzelle mit asymmetrischem ladungsabfang
DE60235846D1 (de)	2010-05-12	Speicherschaltung mit Paritätszellenmatrix
EP1016085A4 (de)	2003-10-15	Flash-speicherzellenanordnung
DE69614787D1 (de)	2001-10-04	Speichermatrix mit mehrzustandsspeicherzellen
DE60037786D1 (de)	2008-03-06	Nichtflüchtiger Halbleiterspeicher mit Zwei-Bitzellen
DE60239315D1 (de)	2011-04-14	Speicherzelle mit Sicherungselement
DE3174621D1 (de)	1986-06-19	Non-volatile, programmable integrated semiconductor memory cell
DE60020210D1 (de)	2005-06-23	Nichtflüchtige Speicheranordnung mit konfigurierbarer Zeilenredundanz
DE69929409D1 (de)	2006-04-06	Speicherzelle mit kapazitiver Ladung
DE69531349D1 (de)	2003-08-28	Spannungsgenerator für nichtflüchtige elektrisch-programmierbare Speicherzellen
DE69509581D1 (de)	1999-06-17	Elektrisch programmierbare Speicherzelle
DE59712601D1 (de)	2006-05-11	Nichtflüchtige speicherzelle

Legal Events

Date	Code	Title	Description
2006-10-05	8332	No legal effect for de