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DE69729648D1 - Aktivpixelsensormatrix mit mehrfachauflösungsausgabe - Google Patents

Aktivpixelsensormatrix mit mehrfachauflösungsausgabe

Info

Publication number
DE69729648D1
DE69729648D1 DE69729648T DE69729648T DE69729648D1 DE 69729648 D1 DE69729648 D1 DE 69729648D1 DE 69729648 T DE69729648 T DE 69729648T DE 69729648 T DE69729648 T DE 69729648T DE 69729648 D1 DE69729648 D1 DE 69729648D1
Authority
DE
Germany
Prior art keywords
pixel sensor
active pixel
sensor matrix
resolution output
multiple resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69729648T
Other languages
English (en)
Other versions
DE69729648T2 (de
Inventor
R Fossum
E Kemeny
Bedabrata Pain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of DE69729648D1 publication Critical patent/DE69729648D1/de
Application granted granted Critical
Publication of DE69729648T2 publication Critical patent/DE69729648T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69729648T 1996-01-22 1997-01-22 Aktivpixelsensormatrix mit mehrfachauflösungsausgabe Expired - Lifetime DE69729648T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1030596P 1996-01-22 1996-01-22
US10305P 1996-01-22
US1370096P 1996-03-20 1996-03-20
US13700P 1996-03-20
PCT/US1997/001012 WO1997028641A1 (en) 1996-01-22 1997-01-22 Active pixel sensor array with multiresolution readout

Publications (2)

Publication Number Publication Date
DE69729648D1 true DE69729648D1 (de) 2004-07-29
DE69729648T2 DE69729648T2 (de) 2005-06-09

Family

ID=26681015

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69733248T Expired - Lifetime DE69733248T2 (de) 1996-01-22 1997-01-22 Aktive bildelementsensormatrix mit elektronischer überblendung
DE69737705T Expired - Lifetime DE69737705T2 (de) 1996-01-22 1997-01-22 Aktive Bildelementsensormatrix
DE69729648T Expired - Lifetime DE69729648T2 (de) 1996-01-22 1997-01-22 Aktivpixelsensormatrix mit mehrfachauflösungsausgabe

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69733248T Expired - Lifetime DE69733248T2 (de) 1996-01-22 1997-01-22 Aktive bildelementsensormatrix mit elektronischer überblendung
DE69737705T Expired - Lifetime DE69737705T2 (de) 1996-01-22 1997-01-22 Aktive Bildelementsensormatrix

Country Status (5)

Country Link
EP (2) EP0940029B1 (de)
JP (2) JP3887420B2 (de)
AU (2) AU1833597A (de)
DE (3) DE69733248T2 (de)
WO (2) WO1997028641A1 (de)

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US7154075B2 (en) * 2003-11-13 2006-12-26 Micron Technology, Inc. Method and apparatus for pixel signal binning and interpolation in column circuits of a sensor circuit
DE102004024165A1 (de) * 2004-05-14 2005-12-01 Kaltenbach & Voigt Gmbh & Co. Kg Zahnärztliche Vorrichtung zum Untersuchen der optischen Eigenschaften von Zahngewebe
US7568628B2 (en) 2005-03-11 2009-08-04 Hand Held Products, Inc. Bar code reading device with global electronic shutter control
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JP2007175294A (ja) * 2005-12-28 2007-07-12 Ge Medical Systems Global Technology Co Llc イメージセンサ及びその制御方法並びにｘ線検出器及びｘ線ｃｔ装置
JP5311834B2 (ja) 2008-01-24 2013-10-09 キヤノン株式会社 撮像装置、撮像システム、信号処理方法及びプログラム
JP5585903B2 (ja) 2008-07-30 2014-09-10 国立大学法人静岡大学 距離画像センサ、及び撮像信号を飛行時間法により生成する方法
CA2775665C (en) 2009-09-28 2016-12-13 San-Ei Gen F.F.I., Inc. Turmeric pigment composition and method for preparing same
DE102010030108B4 (de) 2010-06-15 2014-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Farbbildsensor
WO2013099264A1 (ja) * 2011-12-27 2013-07-04 株式会社ニコン 固体撮像素子および撮像装置
JP6579741B2 (ja) * 2014-10-09 2019-09-25 キヤノン株式会社 撮像装置及び放射線撮像システム
US20160249910A1 (en) 2015-02-27 2016-09-01 Ethicon Endo-Surgery, Llc Surgical charging system that charges and/or conditions one or more batteries
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DE102016113010A1 (de) 2015-12-15 2017-06-22 Basler Ag Bestimmung von Helligkeitswerten virtueller Pixel
DE102016112968B4 (de) * 2016-07-14 2018-06-14 Basler Ag Bestimmung von Farbwerten für Pixel an Zwischenpositionen
JP7083608B2 (ja) * 2016-09-29 2022-06-13 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP6859553B2 (ja) * 2017-01-12 2021-04-14 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
KR102423565B1 (ko) * 2017-09-28 2022-07-20 애플 인크. 이벤트 카메라 데이터 프로세싱을 위한 시스템 및 방법
CN111712921A (zh) * 2017-12-12 2020-09-25 拉芳德利责任有限公司 用于可见光和紫外光检测的半导体光学传感器及其对应的制造过程
CN115356545B (zh) * 2022-08-10 2023-04-11 中国科学院近代物理研究所 一种用于带电粒子探测的新型像素单元结构及其使用方法

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Also Published As

Publication number Publication date
JP3887420B2 (ja) 2007-02-28
WO1997028558A2 (en) 1997-08-07
DE69733248T2 (de) 2006-01-19
JP2000504489A (ja) 2000-04-11
EP0940029A4 (de) 2001-01-17
EP0878007B1 (de) 2005-05-11
EP0940029B1 (de) 2004-06-23
EP0878007A4 (de) 2001-05-16
WO1997028641A1 (en) 1997-08-07
EP0940029A1 (de) 1999-09-08
EP0878007A2 (de) 1998-11-18
JP2000504516A (ja) 2000-04-11
DE69729648T2 (de) 2005-06-09
DE69737705T2 (de) 2008-01-10
AU1833597A (en) 1997-08-22
DE69737705D1 (de) 2007-06-14
WO1997028558A3 (en) 1997-10-02
DE69733248D1 (de) 2005-06-16
AU1835397A (en) 1997-08-22

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