DE69417994D1 - Speicheranordnung - Google Patents
SpeicheranordnungInfo
- Publication number
- DE69417994D1 DE69417994D1 DE69417994T DE69417994T DE69417994D1 DE 69417994 D1 DE69417994 D1 DE 69417994D1 DE 69417994 T DE69417994 T DE 69417994T DE 69417994 T DE69417994 T DE 69417994T DE 69417994 D1 DE69417994 D1 DE 69417994D1
- Authority
- DE
- Germany
- Prior art keywords
- storage arrangement
- arrangement
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5293577A JP2937717B2 (ja) | 1993-11-24 | 1993-11-24 | メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69417994D1 true DE69417994D1 (de) | 1999-05-27 |
| DE69417994T2 DE69417994T2 (de) | 1999-09-16 |
Family
ID=17796541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69417994T Expired - Fee Related DE69417994T2 (de) | 1993-11-24 | 1994-11-24 | Speicheranordnung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5537359A (de) |
| EP (1) | EP0654790B1 (de) |
| JP (1) | JP2937717B2 (de) |
| KR (1) | KR0150500B1 (de) |
| DE (1) | DE69417994T2 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3723615B2 (ja) * | 1995-01-06 | 2005-12-07 | 株式会社ルネサステクノロジ | ダイナミック型半導体記憶装置 |
| US5930178A (en) * | 1997-11-17 | 1999-07-27 | International Business Machines Corporation | Bitline voltage stabilization device and method |
| FR2819091B1 (fr) * | 2000-12-29 | 2003-04-11 | St Microelectronics Sa | Rafraichissement de memoire dram |
| US7127559B2 (en) * | 2001-07-10 | 2006-10-24 | Micron Technology, Inc. | Caching of dynamic arrays |
| US7062761B2 (en) | 2001-07-10 | 2006-06-13 | Micron Technology, Inc. | Dynamic arrays and overlays with bounds policies |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62197992A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Electric Corp | ダイナミツクｒａｍ |
| JPS63146293A (ja) * | 1986-12-09 | 1988-06-18 | Toshiba Corp | 半導体記憶装置 |
| JPH07107797B2 (ja) * | 1987-02-10 | 1995-11-15 | 三菱電機株式会社 | ダイナミツクランダムアクセスメモリ |
| JP2664810B2 (ja) * | 1991-03-07 | 1997-10-22 | 株式会社東芝 | メモリセルアレイ分割型半導体記憶装置 |
-
1993
- 1993-11-24 JP JP5293577A patent/JP2937717B2/ja not_active Expired - Fee Related
-
1994
- 1994-11-22 US US08/343,111 patent/US5537359A/en not_active Expired - Lifetime
- 1994-11-22 KR KR1019940030715A patent/KR0150500B1/ko not_active IP Right Cessation
- 1994-11-24 EP EP94118498A patent/EP0654790B1/de not_active Expired - Lifetime
- 1994-11-24 DE DE69417994T patent/DE69417994T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0654790A2 (de) | 1995-05-24 |
| US5537359A (en) | 1996-07-16 |
| DE69417994T2 (de) | 1999-09-16 |
| JPH07147085A (ja) | 1995-06-06 |
| EP0654790B1 (de) | 1999-04-21 |
| JP2937717B2 (ja) | 1999-08-23 |
| KR950015376A (ko) | 1995-06-16 |
| KR0150500B1 (ko) | 1998-12-01 |
| EP0654790A3 (de) | 1995-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |