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DE68923061D1 - Sonnenzelle. - Google Patents

Sonnenzelle.

Info

Publication number
DE68923061D1
DE68923061D1 DE68923061T DE68923061T DE68923061D1 DE 68923061 D1 DE68923061 D1 DE 68923061D1 DE 68923061 T DE68923061 T DE 68923061T DE 68923061 T DE68923061 T DE 68923061T DE 68923061 D1 DE68923061 D1 DE 68923061D1
Authority
DE
Germany
Prior art keywords
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923061T
Other languages
English (en)
Other versions
DE68923061T2 (de
Inventor
Shigeru C O Mitsubishi Hokuyo
Takao C O Mitsubishi Denki Oda
Hideo C O Mitsubishi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63290990A external-priority patent/JPH02135786A/ja
Priority claimed from JP1213628A external-priority patent/JPH0377382A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE68923061D1 publication Critical patent/DE68923061D1/de
Application granted granted Critical
Publication of DE68923061T2 publication Critical patent/DE68923061T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE68923061T 1988-11-16 1989-11-07 Sonnenzelle. Expired - Fee Related DE68923061T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63290990A JPH02135786A (ja) 1988-11-16 1988-11-16 太陽電池セル
JP1213628A JPH0377382A (ja) 1989-08-19 1989-08-19 太陽電池セル

Publications (2)

Publication Number Publication Date
DE68923061D1 true DE68923061D1 (de) 1995-07-20
DE68923061T2 DE68923061T2 (de) 1995-11-09

Family

ID=26519901

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923061T Expired - Fee Related DE68923061T2 (de) 1988-11-16 1989-11-07 Sonnenzelle.

Country Status (3)

Country Link
US (1) US5009720A (de)
EP (1) EP0369666B1 (de)
DE (1) DE68923061T2 (de)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
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JP2593957B2 (ja) * 1990-11-09 1997-03-26 シャープ株式会社 バイパスダイオード付太陽電池
JP2912496B2 (ja) * 1991-09-30 1999-06-28 シャープ株式会社 太陽電池モジュール
GB9420511D0 (en) * 1994-10-11 1994-11-23 Ici Plc High voltage generator
US5661069A (en) * 1995-06-06 1997-08-26 Lsi Logic Corporation Method of forming an MOS-type integrated circuit structure with a diode formed in the substrate under a polysilicon gate electrode to conserve space
US6156967A (en) * 1998-06-04 2000-12-05 Tecstar Power Systems, Inc. Modular glass covered solar cell array
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
ATE411619T1 (de) * 1998-05-28 2008-10-15 Emcore Corp Solarzelle mit einer integrierten monolithisch gewachsenen bypassdiode
US6103970A (en) * 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
GB2341721B (en) 1998-09-04 2003-08-27 Eev Ltd Manufacturing method for solar cell arrangements
DE19845658C2 (de) 1998-10-05 2001-11-15 Daimler Chrysler Ag Solarzelle mit Bypassdiode
DE19854269B4 (de) * 1998-11-25 2004-07-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Dünnschichtsolarzellenanordnung sowie Verfahren zur Herstellung derselben
KR100291332B1 (ko) * 1998-12-29 2001-07-12 윤종용 반도체소자의제조방법
GB9901513D0 (en) * 1999-01-25 1999-03-17 Eev Ltd Solar cell arrangements
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
DE19921545A1 (de) * 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
US6635507B1 (en) * 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
EP1199755A4 (de) * 1999-07-26 2004-10-20 Nat Inst Of Advanced Ind Scien Zno-verbundhalbleiter-lichtemittierendes element und seine herstellungsmethode
JP4620298B2 (ja) * 2001-07-23 2011-01-26 パイオニア株式会社 銀若しくは銀合金配線及びその形成方法並びに表示パネル基板
US6680432B2 (en) * 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
DE10239845C1 (de) * 2002-08-29 2003-12-24 Day4 Energy Inc Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US7467102B2 (en) * 2003-09-11 2008-12-16 International Business Machines Corporation Request type grid computing
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
DE102005015132A1 (de) * 2005-03-31 2006-10-05 Rwe Space Solar Power Gmbh Solarzelle
EP1920468B1 (de) * 2005-09-01 2014-02-26 Merck Patent GmbH Mit bypassdiode integrierte fotovoltaische zellen
US20070144577A1 (en) * 2005-12-23 2007-06-28 Rubin George L Solar cell with physically separated distributed electrical contacts
US7498508B2 (en) 2006-02-24 2009-03-03 Day4 Energy, Inc. High voltage solar cell and solar cell module
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US20090078309A1 (en) * 2007-09-24 2009-03-26 Emcore Corporation Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
US8536445B2 (en) 2006-06-02 2013-09-17 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells
US8686282B2 (en) 2006-08-07 2014-04-01 Emcore Solar Power, Inc. Solar power system for space vehicles or satellites using inverted metamorphic multijunction solar cells
US20080029151A1 (en) 2006-08-07 2008-02-07 Mcglynn Daniel Terrestrial solar power system using III-V semiconductor solar cells
US20080092944A1 (en) * 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20080245409A1 (en) * 2006-12-27 2008-10-09 Emcore Corporation Inverted Metamorphic Solar Cell Mounted on Flexible Film
US20080203411A1 (en) * 2007-02-27 2008-08-28 Hing Wah Chan Direct attachment of optically-active device to optical element
US20080185038A1 (en) * 2007-02-02 2008-08-07 Emcore Corporation Inverted metamorphic solar cell with via for backside contacts
WO2008097806A2 (en) * 2007-02-02 2008-08-14 Solfocus, Inc. Direct attachment of optically-active device to optical element
US20080290368A1 (en) * 2007-05-21 2008-11-27 Day4 Energy, Inc. Photovoltaic cell with shallow emitter
US20090025778A1 (en) * 2007-07-23 2009-01-29 Day4 Energy Inc. Shading protection for solar cells and solar cell modules
US20090032090A1 (en) * 2007-07-30 2009-02-05 Emcore Corporation Method for assembling a terrestrial solar array including a rigid support frame
US20090038679A1 (en) * 2007-08-09 2009-02-12 Emcore Corporation Thin Multijunction Solar Cells With Plated Metal OHMIC Contact and Support
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US20100233838A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Mounting of Solar Cells on a Flexible Substrate
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
CN101919066A (zh) * 2007-12-18 2010-12-15 达伊4能量有限公司 具有对光伏链的边缘接入的光伏模块、互连方法、装置和系统
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8759138B2 (en) 2008-02-11 2014-06-24 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US9331228B2 (en) 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
JP2011524640A (ja) 2008-06-11 2011-09-01 インテバック・インコーポレイテッド 太陽電池形成方法及び太陽電池
US8298856B2 (en) 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
KR20110042083A (ko) * 2008-07-28 2011-04-22 데이4 에너지 인코포레이티드 저온 정밀 에칭백 및 패시베이션 공정으로 제조되는 셀렉티브 에미터를 구비한 결정 실리콘 ｐｖ 셀
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US20100147353A1 (en) * 2008-12-15 2010-06-17 Kishore Kamath Integrated Shunt Protection Diodes For Thin-Film Photovoltaic Cells And Modules
CN102396068A (zh) * 2009-03-20 2012-03-28 因特瓦克公司 高级高效晶体太阳能电池制备方法
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9012771B1 (en) 2009-09-03 2015-04-21 Suncore Photovoltaics, Inc. Solar cell receiver subassembly with a heat shield for use in a concentrating solar system
US9806215B2 (en) * 2009-09-03 2017-10-31 Suncore Photovoltaics, Inc. Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells
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FR3004002B1 (fr) * 2013-03-29 2016-09-02 Soitec Silicon On Insulator Procede d'assemblage avance de cellule photovoltaique concentree
CN103441155B (zh) * 2013-09-05 2016-08-10 天津三安光电有限公司 集成旁路二极管的太阳电池及其制备方法
CN108269875A (zh) * 2016-12-30 2018-07-10 西安科锐盛创新科技有限公司 具有LRC-Ge/Si衬底的GaAs/AlGaAs双结太阳能电池及其制备方法

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JPS6167968A (ja) * 1984-09-11 1986-04-08 Sharp Corp ＧａＡｓ太陽電池素子
US4846896A (en) * 1987-07-08 1989-07-11 Mitsubishi Denki Kabushiki Kaisha Solar cell with integral reverse voltage protection diode
JPH01205472A (ja) * 1988-02-10 1989-08-17 Mitsubishi Electric Corp 太陽電池セル
US4933022A (en) * 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes

Also Published As

Publication number Publication date
DE68923061T2 (de) 1995-11-09
EP0369666B1 (de) 1995-06-14
US5009720A (en) 1991-04-23
EP0369666A3 (en) 1990-12-27
EP0369666A2 (de) 1990-05-23

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee