DE60322826D1 - Integrierte Schaltung - Google Patents
Integrierte SchaltungInfo
- Publication number
- DE60322826D1 DE60322826D1 DE60322826T DE60322826T DE60322826D1 DE 60322826 D1 DE60322826 D1 DE 60322826D1 DE 60322826 T DE60322826 T DE 60322826T DE 60322826 T DE60322826 T DE 60322826T DE 60322826 D1 DE60322826 D1 DE 60322826D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/323,965 US7019377B2 (en) | 2002-12-17 | 2002-12-17 | Integrated circuit including high voltage devices and low voltage devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60322826D1 true DE60322826D1 (de) | 2008-09-25 |
Family
ID=32393050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60322826T Expired - Lifetime DE60322826D1 (de) | 2002-12-17 | 2003-12-12 | Integrierte Schaltung |
Country Status (3)
Country | Link |
---|---|
US (3) | US7019377B2 (de) |
EP (1) | EP1432038B1 (de) |
DE (1) | DE60322826D1 (de) |
Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7163856B2 (en) * | 2003-11-13 | 2007-01-16 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor |
US7220633B2 (en) | 2003-11-13 | 2007-05-22 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused MOSFET |
US7498652B2 (en) * | 2004-04-26 | 2009-03-03 | Texas Instruments Incorporated | Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereof |
JP2006032493A (ja) * | 2004-07-13 | 2006-02-02 | Sharp Corp | 半導体装置及びその製造方法 |
US7176532B2 (en) * | 2004-07-22 | 2007-02-13 | Dialog Semiconductor Gmbh | CMOS active pixel sensor with improved dark current and sensitivity |
KR100602096B1 (ko) * | 2004-12-29 | 2006-07-19 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7608907B2 (en) * | 2005-01-06 | 2009-10-27 | Micrel, Inc. | LDMOS gate controlled schottky diode |
US7491595B2 (en) * | 2005-07-06 | 2009-02-17 | Hewlett-Packard Development Company, L.P. | Creating high voltage FETs with low voltage process |
US7417265B2 (en) * | 2006-02-03 | 2008-08-26 | Semiconductor Components Industries, L.L.C. | Schottky diode structure with enhanced breakdown voltage and method of manufacture |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP5307973B2 (ja) * | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US7466009B2 (en) * | 2006-06-05 | 2008-12-16 | Texas Instruments Incorporated | Method for reducing dislocation threading using a suppression implant |
JP5151258B2 (ja) * | 2006-06-15 | 2013-02-27 | 株式会社リコー | 昇圧型dc−dcコンバータ用の半導体装置及び昇圧型dc−dcコンバータ |
US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
US7781843B1 (en) | 2007-01-11 | 2010-08-24 | Hewlett-Packard Development Company, L.P. | Integrating high-voltage CMOS devices with low-voltage CMOS |
US7700405B2 (en) * | 2007-02-28 | 2010-04-20 | Freescale Semiconductor, Inc. | Microelectronic assembly with improved isolation voltage performance and a method for forming the same |
US7875950B2 (en) * | 2007-03-08 | 2011-01-25 | Semiconductor Components Industries, Llc | Schottky diode structure with multi-portioned guard ring and method of manufacture |
US7879639B2 (en) * | 2007-04-13 | 2011-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device to reduce dark current in image sensors |
US8168466B2 (en) * | 2007-06-01 | 2012-05-01 | Semiconductor Components Industries, Llc | Schottky diode and method therefor |
US8017486B2 (en) * | 2007-06-22 | 2011-09-13 | Macronix International Co., Ltd. | Method of fabricating low on-resistance lateral double-diffused MOS device |
US20090026578A1 (en) * | 2007-07-27 | 2009-01-29 | Micrel, Inc. | Vertical NPN Transistor Fabricated in a CMOS Process With Improved Electrical Characteristics |
US7977715B2 (en) * | 2008-03-17 | 2011-07-12 | Fairchild Semiconductor Corporation | LDMOS devices with improved architectures |
US7781859B2 (en) * | 2008-03-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diode structures having deep wells for improving breakdown voltages |
JP2010010408A (ja) * | 2008-06-27 | 2010-01-14 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US8134212B2 (en) * | 2008-08-08 | 2012-03-13 | Texas Instruments Incorporated | Implanted well breakdown in high voltage devices |
US7960781B2 (en) * | 2008-09-08 | 2011-06-14 | Semiconductor Components Industries, Llc | Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method |
US9000550B2 (en) * | 2008-09-08 | 2015-04-07 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US7902075B2 (en) * | 2008-09-08 | 2011-03-08 | Semiconductor Components Industries, L.L.C. | Semiconductor trench structure having a sealing plug and method |
US7777248B1 (en) | 2008-09-30 | 2010-08-17 | Pmc-Sierra, Inc. | Semiconductor device for latch-up prevention |
US8080832B1 (en) | 2008-09-30 | 2011-12-20 | Pmc-Sierra Us, Inc. | Semiconductor device for electrostatic discharge protection |
US20100165585A1 (en) | 2008-12-26 | 2010-07-01 | Megica Corporation | Chip packages with power management integrated circuits and related techniques |
CN101635298B (zh) * | 2009-06-10 | 2014-12-31 | 北京中星微电子有限公司 | 平面工艺的三维集成电路 |
JP2011238771A (ja) * | 2010-05-11 | 2011-11-24 | Hitachi Ltd | 半導体装置 |
US8618627B2 (en) * | 2010-06-24 | 2013-12-31 | Fairchild Semiconductor Corporation | Shielded level shift transistor |
EP2402998B1 (de) * | 2010-07-01 | 2020-04-08 | ams AG | Herstellung eines p-Kanal-LDMOS-Transistors |
KR101232935B1 (ko) * | 2010-11-23 | 2013-02-15 | 주식회사 동부하이텍 | Ldmos반도체 소자 |
US8643101B2 (en) | 2011-04-20 | 2014-02-04 | United Microelectronics Corp. | High voltage metal oxide semiconductor device having a multi-segment isolation structure |
US8581338B2 (en) | 2011-05-12 | 2013-11-12 | United Microelectronics Corp. | Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof |
US8501603B2 (en) | 2011-06-15 | 2013-08-06 | United Microelectronics Corp. | Method for fabricating high voltage transistor |
US8592905B2 (en) | 2011-06-26 | 2013-11-26 | United Microelectronics Corp. | High-voltage semiconductor device |
CN102263034B (zh) * | 2011-08-12 | 2013-06-05 | 杭州士兰集成电路有限公司 | Bcd工艺中的高压mos晶体管结构及其制造方法 |
US20130043513A1 (en) | 2011-08-19 | 2013-02-21 | United Microelectronics Corporation | Shallow trench isolation structure and fabricating method thereof |
US8729599B2 (en) | 2011-08-22 | 2014-05-20 | United Microelectronics Corp. | Semiconductor device |
US8921937B2 (en) | 2011-08-24 | 2014-12-30 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device and method of fabricating the same |
US9214457B2 (en) | 2011-09-20 | 2015-12-15 | Alpha & Omega Semiconductor Incorporated | Method of integrating high voltage devices |
US9793153B2 (en) | 2011-09-20 | 2017-10-17 | Alpha And Omega Semiconductor Incorporated | Low cost and mask reduction method for high voltage devices |
US8742498B2 (en) | 2011-11-03 | 2014-06-03 | United Microelectronics Corp. | High voltage semiconductor device and fabricating method thereof |
US8482063B2 (en) | 2011-11-18 | 2013-07-09 | United Microelectronics Corporation | High voltage semiconductor device |
US8587058B2 (en) | 2012-01-02 | 2013-11-19 | United Microelectronics Corp. | Lateral diffused metal-oxide-semiconductor device |
US8492835B1 (en) | 2012-01-20 | 2013-07-23 | United Microelectronics Corporation | High voltage MOSFET device |
US9093296B2 (en) | 2012-02-09 | 2015-07-28 | United Microelectronics Corp. | LDMOS transistor having trench structures extending to a buried layer |
TWI523196B (zh) | 2012-02-24 | 2016-02-21 | 聯華電子股份有限公司 | 高壓金氧半導體電晶體元件及其佈局圖案 |
US8890144B2 (en) | 2012-03-08 | 2014-11-18 | United Microelectronics Corp. | High voltage semiconductor device |
CN102623509A (zh) * | 2012-04-19 | 2012-08-01 | 成都芯源系统有限公司 | 高压开关器件及其制作方法 |
US9236471B2 (en) | 2012-04-24 | 2016-01-12 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
CN102637725B (zh) * | 2012-04-26 | 2014-07-16 | 杭州士兰集成电路有限公司 | 采用Bipolar低压工艺实现的器件及其制造方法 |
CN102709324B (zh) * | 2012-06-06 | 2014-12-10 | 苏州博创集成电路设计有限公司 | 一种低功耗高压驱动电路及其使用的双向p型开关管 |
US9159791B2 (en) | 2012-06-06 | 2015-10-13 | United Microelectronics Corp. | Semiconductor device comprising a conductive region |
US20130334648A1 (en) * | 2012-06-15 | 2013-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for High Voltage Diodes |
US8836067B2 (en) | 2012-06-18 | 2014-09-16 | United Microelectronics Corp. | Transistor device and manufacturing method thereof |
US8674441B2 (en) | 2012-07-09 | 2014-03-18 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
US8916440B2 (en) | 2012-08-03 | 2014-12-23 | International Business Machines Corporation | Semiconductor structures and methods of manufacture |
US8643104B1 (en) | 2012-08-14 | 2014-02-04 | United Microelectronics Corp. | Lateral diffusion metal oxide semiconductor transistor structure |
US8729631B2 (en) | 2012-08-28 | 2014-05-20 | United Microelectronics Corp. | MOS transistor |
KR101638754B1 (ko) * | 2012-09-06 | 2016-07-11 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 |
US9196717B2 (en) | 2012-09-28 | 2015-11-24 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
US8829611B2 (en) | 2012-09-28 | 2014-09-09 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
US8704304B1 (en) | 2012-10-05 | 2014-04-22 | United Microelectronics Corp. | Semiconductor structure |
US20140110777A1 (en) | 2012-10-18 | 2014-04-24 | United Microelectronics Corp. | Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof |
US9224857B2 (en) | 2012-11-12 | 2015-12-29 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9035425B2 (en) | 2013-05-02 | 2015-05-19 | United Microelectronics Corp. | Semiconductor integrated circuit |
US8896057B1 (en) | 2013-05-14 | 2014-11-25 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US8786362B1 (en) | 2013-06-04 | 2014-07-22 | United Microelectronics Corporation | Schottky diode having current leakage protection structure and current leakage protecting method of the same |
US8941175B2 (en) | 2013-06-17 | 2015-01-27 | United Microelectronics Corp. | Power array with staggered arrangement for improving on-resistance and safe operating area |
US9136375B2 (en) | 2013-11-21 | 2015-09-15 | United Microelectronics Corp. | Semiconductor structure |
US20150214116A1 (en) * | 2014-01-27 | 2015-07-30 | Globalfoundries Inc. | Low leakage pmos transistor |
US9490360B2 (en) | 2014-02-19 | 2016-11-08 | United Microelectronics Corp. | Semiconductor device and operating method thereof |
US9543292B2 (en) | 2015-02-27 | 2017-01-10 | Alpha And Omega Semiconductor Incorporated | Field effect transistor with integrated Zener diode |
CN107680908A (zh) * | 2016-08-01 | 2018-02-09 | 中芯国际集成电路制造(北京)有限公司 | 高压半导体器件及其制备方法 |
US10134891B2 (en) * | 2016-08-30 | 2018-11-20 | United Microelectronics Corp. | Transistor device with threshold voltage adjusted by body effect |
US10177044B2 (en) * | 2017-05-05 | 2019-01-08 | Newport Fab, Llc | Bulk CMOS RF switch with reduced parasitic capacitance |
US10418402B2 (en) * | 2017-11-30 | 2019-09-17 | Stmicroelectronics (Research & Development) Limited | Near ultraviolet photocell |
KR102336908B1 (ko) * | 2018-01-11 | 2021-12-09 | 주식회사 디비하이텍 | 고전압 파워 다이오드 |
US11296075B2 (en) * | 2018-08-31 | 2022-04-05 | Texas Instruments Incorporated | High reliability polysilicon components |
TWI668838B (zh) * | 2019-01-08 | 2019-08-11 | 立錡科技股份有限公司 | 高壓元件及其製造方法 |
CN111192917B (zh) * | 2019-11-27 | 2023-08-18 | 成都芯源系统有限公司 | 一种横向场效应晶体管 |
TWI726515B (zh) * | 2019-12-04 | 2021-05-01 | 台灣茂矽電子股份有限公司 | 瞬態電壓抑制二極體結構及其製造方法 |
TWI821940B (zh) * | 2021-12-01 | 2023-11-11 | 立錡科技股份有限公司 | 高壓元件與低壓元件整合製造方法 |
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US3335341A (en) | 1964-03-06 | 1967-08-08 | Westinghouse Electric Corp | Diode structure in semiconductor integrated circuit and method of making the same |
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EP0658938B1 (de) * | 1993-12-15 | 2001-08-08 | STMicroelectronics S.r.l. | Integrierte Schaltung die eine EEPROM-Zelle und einen MOS-Transistor enthält |
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KR100867572B1 (ko) * | 2002-03-09 | 2008-11-10 | 페어차일드코리아반도체 주식회사 | 고전압 섬 영역 내에 바이폴라 트랜지스터가 내장된고전압 집적 회로 |
US6900091B2 (en) * | 2002-08-14 | 2005-05-31 | Advanced Analogic Technologies, Inc. | Isolated complementary MOS devices in epi-less substrate |
-
2002
- 2002-12-17 US US10/323,965 patent/US7019377B2/en not_active Expired - Lifetime
-
2003
- 2003-12-12 DE DE60322826T patent/DE60322826D1/de not_active Expired - Lifetime
- 2003-12-12 EP EP03257821A patent/EP1432038B1/de not_active Expired - Lifetime
-
2005
- 2005-07-25 US US11/189,173 patent/US20050253216A1/en not_active Abandoned
- 2005-07-25 US US11/189,146 patent/US7759759B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1432038B1 (de) | 2008-08-13 |
US20040113204A1 (en) | 2004-06-17 |
US7759759B2 (en) | 2010-07-20 |
EP1432038A3 (de) | 2006-03-08 |
US7019377B2 (en) | 2006-03-28 |
US20050253216A1 (en) | 2005-11-17 |
US20050258496A1 (en) | 2005-11-24 |
EP1432038A2 (de) | 2004-06-23 |
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