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DE60313843D1 - Halbleiterlaservorrichtung und Verfahren zu deren Herstellung - Google Patents

Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Info

Publication number
DE60313843D1
DE60313843D1 DE60313843T DE60313843T DE60313843D1 DE 60313843 D1 DE60313843 D1 DE 60313843D1 DE 60313843 T DE60313843 T DE 60313843T DE 60313843 T DE60313843 T DE 60313843T DE 60313843 D1 DE60313843 D1 DE 60313843D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60313843T
Other languages
English (en)
Other versions
DE60313843T2 (de
Inventor
Mamoru Miyachi
Atsushi Watanabe
Hirokazu Takahashi
Yoshinori Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Publication of DE60313843D1 publication Critical patent/DE60313843D1/de
Application granted granted Critical
Publication of DE60313843T2 publication Critical patent/DE60313843T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60313843T 2002-12-25 2003-12-18 Halbleiterlaservorrichtung und Verfahren zu deren Herstellung Expired - Lifetime DE60313843T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002374636A JP2004207480A (ja) 2002-12-25 2002-12-25 半導体レーザ装置及びその製造方法
JP2002374636 2002-12-25

Publications (2)

Publication Number Publication Date
DE60313843D1 true DE60313843D1 (de) 2007-06-28
DE60313843T2 DE60313843T2 (de) 2008-02-07

Family

ID=32463543

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60313843T Expired - Lifetime DE60313843T2 (de) 2002-12-25 2003-12-18 Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US7079563B2 (de)
EP (1) EP1434320B1 (de)
JP (1) JP2004207480A (de)
CN (1) CN1510807A (de)
DE (1) DE60313843T2 (de)

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* Cited by examiner, † Cited by third party
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JP4660224B2 (ja) * 2004-03-30 2011-03-30 三洋電機株式会社 半導体レーザ装置
JP4583128B2 (ja) * 2004-03-30 2010-11-17 三洋電機株式会社 半導体レーザ装置
JP4544892B2 (ja) * 2004-03-30 2010-09-15 三洋電機株式会社 半導体レーザ装置およびその製造方法
JP2011023754A (ja) * 2004-03-30 2011-02-03 Sanyo Electric Co Ltd 半導体レーザ装置
JP2006128602A (ja) 2004-03-30 2006-05-18 Sanyo Electric Co Ltd 半導体レーザ装置およびその製造方法
US7439551B2 (en) * 2004-07-08 2008-10-21 Sharp Kabushiki Kaisha Nitride-based compound semiconductor light emitting device
JP4614715B2 (ja) * 2004-08-31 2011-01-19 三洋電機株式会社 半導体レーザ装置およびその製造方法
US7512167B2 (en) * 2004-09-24 2009-03-31 Sanyo Electric Co., Ltd. Integrated semiconductor laser device and method of fabricating the same
JP4556591B2 (ja) * 2004-09-27 2010-10-06 日亜化学工業株式会社 半導体レーザ装置
JP4671728B2 (ja) * 2005-03-25 2011-04-20 三洋電機株式会社 半導体レーザ装置および光ピックアップ装置
JP2006278576A (ja) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd 半導体レーザ装置、半導体レーザ装置の製造方法および光ピックアップ装置
JP2006278577A (ja) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd 半導体レーザ装置
NO325047B1 (no) * 2005-03-30 2008-01-21 Intopto As Optiske enheter ved bruk av et pentaert III-V material system
JP4352337B2 (ja) * 2005-09-16 2009-10-28 ソニー株式会社 半導体レーザおよび半導体レーザ装置
JP4755199B2 (ja) * 2005-12-20 2011-08-24 パイオニア株式会社 多波長集積半導体レーザ装置の製造方法
JP2008294213A (ja) * 2007-05-24 2008-12-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
FR2917910B1 (fr) * 2007-06-22 2010-06-11 Thales Sa Dispositif de lumiere optimisee par l'utilisation de materiaux artificiels et procede de fabrication associe
JP5024008B2 (ja) * 2007-12-10 2012-09-12 ソニー株式会社 半導体発光素子及びその製造方法
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
JP4901909B2 (ja) * 2009-05-19 2012-03-21 シャープ株式会社 光学部品及びその製造方法
US8653839B2 (en) * 2009-07-17 2014-02-18 Caterpillar Inc. Zinc oxide sulfur sensors and method of using said sensors
US20110188532A1 (en) * 2010-02-04 2011-08-04 Sanyo Electric Co., Ltd. Semiconductor Laser Apparatus
JP5521611B2 (ja) * 2010-02-15 2014-06-18 ソニー株式会社 光装置および光機器
JP5633670B2 (ja) * 2010-03-01 2014-12-03 ソニー株式会社 発光装置およびそれを用いた光装置
JP2010166103A (ja) * 2010-05-07 2010-07-29 Sanyo Electric Co Ltd 集積型半導体レーザ素子およびその製造方法
US9362444B1 (en) * 2015-03-18 2016-06-07 International Business Machines Corporation Optoelectronics and CMOS integration on GOI substrate
CN114079228B (zh) * 2020-08-14 2024-06-04 中国科学院苏州纳米技术与纳米仿生研究所 激光器及其制作方法

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US4399541A (en) * 1981-02-17 1983-08-16 Northern Telecom Limited Light emitting device package having combined heater/cooler
CA2180180C (en) * 1994-01-11 2006-03-14 Jeffrey Harold Butler Alumoxanes and catalysts comprising alumoxanes
US5699375A (en) * 1996-07-08 1997-12-16 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US6031858A (en) * 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
JPH11112091A (ja) * 1997-09-30 1999-04-23 Victor Co Of Japan Ltd 半導体レーザ装置
US6144683A (en) * 1998-01-07 2000-11-07 Xerox Corporation Red, infrared, and blue stacked laser diode array by wafer fusion
US5920766A (en) * 1998-01-07 1999-07-06 Xerox Corporation Red and blue stacked laser diode array by wafer fusion
JPH11298093A (ja) * 1998-04-15 1999-10-29 Victor Co Of Japan Ltd 二波長半導体レーザ装置
US6136623A (en) * 1998-05-06 2000-10-24 Xerox Corporation Multiple wavelength laser arrays by flip-chip bonding
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
JP3486900B2 (ja) 2000-02-15 2004-01-13 ソニー株式会社 発光装置およびそれを用いた光装置
US6661824B2 (en) * 2000-02-18 2003-12-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP2002043697A (ja) * 2000-07-25 2002-02-08 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2002176229A (ja) * 2000-12-07 2002-06-21 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2002179229A (ja) 2000-12-15 2002-06-26 Mitsubishi Pencil Co Ltd ワーク搬送装置及びワーク搬送方法

Also Published As

Publication number Publication date
CN1510807A (zh) 2004-07-07
EP1434320A3 (de) 2005-01-05
DE60313843T2 (de) 2008-02-07
EP1434320B1 (de) 2007-05-16
EP1434320A2 (de) 2004-06-30
JP2004207480A (ja) 2004-07-22
US7079563B2 (en) 2006-07-18
US20040136428A1 (en) 2004-07-15

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition