Nothing Special   »   [go: up one dir, main page]

DE602006017872D1 - Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung - Google Patents

Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung

Info

Publication number
DE602006017872D1
DE602006017872D1 DE602006017872T DE602006017872T DE602006017872D1 DE 602006017872 D1 DE602006017872 D1 DE 602006017872D1 DE 602006017872 T DE602006017872 T DE 602006017872T DE 602006017872 T DE602006017872 T DE 602006017872T DE 602006017872 D1 DE602006017872 D1 DE 602006017872D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
device based
gallium nitride
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006017872T
Other languages
English (en)
Inventor
Koji Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of DE602006017872D1 publication Critical patent/DE602006017872D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE602006017872T 2005-11-16 2006-11-14 Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung Active DE602006017872D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005331607A JP4137936B2 (ja) 2005-11-16 2005-11-16 窒化ガリウム系化合物半導体発光素子
PCT/JP2006/323052 WO2007058331A1 (en) 2005-11-16 2006-11-14 Gallium nitride-based compound semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
DE602006017872D1 true DE602006017872D1 (de) 2010-12-09

Family

ID=38204567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006017872T Active DE602006017872D1 (de) 2005-11-16 2006-11-14 Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung

Country Status (8)

Country Link
US (2) US7741653B2 (de)
EP (2) EP1949462B1 (de)
JP (1) JP4137936B2 (de)
KR (4) KR101098286B1 (de)
CN (2) CN101699637B (de)
DE (1) DE602006017872D1 (de)
TW (2) TW201037871A (de)
WO (1) WO2007058331A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR100878433B1 (ko) * 2005-05-18 2009-01-13 삼성전기주식회사 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법
US8169078B2 (en) * 2006-12-28 2012-05-01 Renesas Electronics Corporation Electrode structure, semiconductor element, and methods of manufacturing the same
JP5196111B2 (ja) * 2007-07-02 2013-05-15 日亜化学工業株式会社 半導体発光素子
WO2009102032A1 (ja) * 2008-02-15 2009-08-20 Mitsubishi Chemical Corporation ＧａＮ系ＬＥＤ素子およびその製造方法
US8222667B2 (en) * 2008-03-06 2012-07-17 Sumitomo Metal Mining Co., Ltd Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element
JP2009283551A (ja) 2008-05-20 2009-12-03 Showa Denko Kk 半導体発光素子及びその製造方法、ランプ
KR100964231B1 (ko) * 2008-08-29 2010-06-16 삼성모바일디스플레이주식회사 유기 발광 소자 및 유기 발광 표시 장치
KR100999694B1 (ko) * 2008-09-01 2010-12-08 엘지이노텍 주식회사 발광 소자
WO2010052810A1 (ja) * 2008-11-06 2010-05-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN102054852A (zh) * 2009-10-28 2011-05-11 展晶科技(深圳)有限公司 发光二极管及其制作方法
TWI415298B (zh) * 2009-10-29 2013-11-11 Advanced Optoelectronic Tech 發光二極體及其製作方法
US20130026487A1 (en) * 2010-03-23 2013-01-31 Nichia Corporation Nitride semiconductor light emitting element
CN102456825A (zh) * 2010-10-25 2012-05-16 展晶科技(深圳)有限公司 发光二极管及其制造方法
JP2012119585A (ja) 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
CN102832299B (zh) * 2011-06-17 2015-10-21 广东量晶光电科技有限公司 一种层状透明导电层led芯片的制备方法
KR20130027991A (ko) * 2011-09-08 2013-03-18 서울옵토디바이스주식회사 투명 전극용 ｉｔｏ층, 이를 포함하는 발광 다이오드 및 그 제조 방법
KR101295468B1 (ko) * 2012-02-23 2013-08-09 전남대학교산학협력단 발광소자 및 그 제조방법
CN102738345B (zh) * 2012-07-11 2015-01-07 天津三安光电有限公司 具有透明导电层的发光二极管及其制作方法
KR101319563B1 (ko) * 2012-07-18 2013-10-23 순천대학교 산학협력단 반도체 발광 소자 및 그 제조 방법
WO2014014178A1 (ko) * 2012-07-18 2014-01-23 순천대학교 산학협력단 반도체 발광소자, 이를 위한 제조 방법, 박막 증착 장치 및 박막 증착 방법
CN103700749A (zh) * 2012-09-28 2014-04-02 上海蓝光科技有限公司 一种发光二极管及其制作方法
US9099623B2 (en) 2013-08-30 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacture including substrate and package structure of optical chip
US9419156B2 (en) * 2013-08-30 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package and method for integration of heterogeneous integrated circuits
CN104157749B (zh) * 2014-08-19 2017-01-18 映瑞光电科技(上海)有限公司 Ito膜层的制备方法及led芯片的制备方法
DE102017103164A1 (de) * 2017-02-16 2018-08-16 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN109207942B (zh) * 2017-07-04 2023-08-18 北京北方华创微电子装备有限公司 一种金属膜层沉积方法和金属膜层沉积设备
US10566493B1 (en) 2018-07-31 2020-02-18 International Business Machines Corporation Device with integration of light-emitting diode, light sensor, and bio-electrode sensors on a substrate
CN110047984A (zh) * 2019-04-10 2019-07-23 深圳市华星光电半导体显示技术有限公司 Micro LED器件及显示面板

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2941743B2 (ja) 1996-06-05 1999-08-30 株式会社東芝 化合物半導体発光素子及びその製造方法
EP0969517B1 (de) * 1998-07-04 2005-10-12 International Business Machines Corporation Elektroden für elektrooptische Vorrichtungen
US6451415B1 (en) * 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
DE19947030A1 (de) 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
JP3394488B2 (ja) 2000-01-24 2003-04-07 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
JP2001307553A (ja) * 2000-04-24 2001-11-02 Geomatec Co Ltd 透明導電膜およびその製造方法並びにその用途
KR200198806Y1 (ko) 2000-05-03 2000-10-02 성도밸브주식회사 수동식 밸브개폐기
JP3700767B2 (ja) 2001-05-18 2005-09-28 日立電線株式会社 半導体発光素子
JP3697609B2 (ja) 2001-05-23 2005-09-21 日立電線株式会社 半導体発光素子
JP2002353506A (ja) 2001-05-23 2002-12-06 Sharp Corp 半導体発光素子およびその製造方法
JP2003017748A (ja) 2001-06-27 2003-01-17 Seiwa Electric Mfg Co Ltd 窒化ガリウム系化合物半導体発光素子及びその製造方法
KR100467316B1 (ko) 2002-03-20 2005-01-24 학교법인 포항공과대학교 갈륨나이트라이드계 광소자의 ｐ형 오믹 전극 및 그 제조방법
US6995401B2 (en) * 2002-10-23 2006-02-07 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same
JP2003179263A (ja) * 2002-11-11 2003-06-27 Seiwa Electric Mfg Co Ltd 窒化ガリウム系半導体発光素子
EP2234183A3 (de) * 2002-11-16 2011-08-17 LG Innotek Co., Ltd. Lichtemittierendes Bauteil und seine Herstellung
JP2005217331A (ja) * 2004-01-30 2005-08-11 Nichia Chem Ind Ltd 半導体発光素子
KR100831957B1 (ko) 2004-02-24 2008-05-23 쇼와 덴코 가부시키가이샤 질화갈륨계 화합물 반도체 발광소자
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
TWI278126B (en) * 2004-08-04 2007-04-01 Formosa Epitaxy Inc GaN series light emitting diode structure of p-type contacting layer with low-temperature growth low resistivity
JPWO2006038665A1 (ja) * 2004-10-01 2008-05-15 三菱電線工業株式会社 窒化物半導体発光素子およびその製造方法
US7649196B2 (en) * 2004-11-03 2010-01-19 Massachusetts Institute Of Technology Light emitting device
TWM279022U (en) 2005-04-29 2005-10-21 Nan Ya Photonics Inc LED with metal-oxide conductive layer
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals

Also Published As

Publication number Publication date
EP2244311A3 (de) 2015-04-15
EP1949462B1 (de) 2010-10-27
JP4137936B2 (ja) 2008-08-20
CN101699637B (zh) 2012-02-08
KR100972359B1 (ko) 2010-07-26
KR101098286B1 (ko) 2011-12-23
TW200737549A (en) 2007-10-01
US7952116B2 (en) 2011-05-31
US20090224282A1 (en) 2009-09-10
US20100213501A1 (en) 2010-08-26
EP2244311A2 (de) 2010-10-27
TWI348774B (de) 2011-09-11
WO2007058331A1 (en) 2007-05-24
US7741653B2 (en) 2010-06-22
TW201037871A (en) 2010-10-16
CN101310392A (zh) 2008-11-19
KR20100099341A (ko) 2010-09-10
EP1949462A4 (de) 2009-09-23
KR20080103612A (ko) 2008-11-27
EP1949462A1 (de) 2008-07-30
KR20080063398A (ko) 2008-07-03
CN101310392B (zh) 2010-06-09
EP2244311B1 (de) 2018-01-10
KR20090083493A (ko) 2009-08-03
CN101699637A (zh) 2010-04-28
JP2007142028A (ja) 2007-06-07
TWI364850B (en) 2012-05-21

Similar Documents

Publication Publication Date Title
DE602006017872D1 (de) Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung
DE602004025461D1 (de) Lichtemittierendes bauelement auf galliumnitridbasis
EP1965444A4 (de) Galliumnitrid-verbundhalbleiter-leuchtanordnung
FR2898606B1 (fr) Film monocristallin semi-conducteur a base de nitrure
TWI369793B (en) Gallium nitride-based compound semiconductor light-emitting element
EP2031665A4 (de) Halbleiter-leuchtelement mit galliumnitridzusammensetzung
FR2916574B1 (fr) Dispositif a semi-conducteur
EP1854155A4 (de) Lichtemittierendes halbleiterbauelement
DE602005025972D1 (de) Vorrichtung zur Versorgung einer mehrzweigigen Leuchtdiodenschaltung
TWI371867B (en) Semiconductor light-emitting device
DE602006004119D1 (de) Strukturen zur Verminderung der Betriebsspannung in einer Halbleitervorrichtung
EP1708284A4 (de) Lichtemittierendes halbleiterbauelement
GB2453464B (en) Light-emitting semiconductor device
DE602007013318D1 (de) Halbleiterbauelement
EP1935037A4 (de) Lichtemittierende gruppe-iii-nitrid-halbleiter-vorrichtung
EP1721342A4 (de) Iii-nitridverbindungs-halbleiter-lichtemissionsbauelement
DE602006012106D1 (de) Halbleiteranordnung
FI20070496A0 (fi) Valoa säteilevä diodi
DE602007013972D1 (de) Halbleiterbauelement
DE602007002105D1 (de) Halbleiterbauelement
DE502004008664D1 (de) Lichtemittierendes halbleiterbauelement mit einer schutzdiode
DE602006018569D1 (de) Mikroskopsystem mit einer Beleuchtungsvorrichtung
DE602005027669D1 (de) Halbleiterbauelement mit einer Diode für eine Gleichrichterschaltung
EP2159852A4 (de) Lichtemittierendes halbleiterbauelement
EP2237382A4 (de) Lichtemittierendes halbleiterbauelement

Legal Events

Date Code Title Description
R082 Change of representative

Ref document number: 1949462

Country of ref document: EP

Representative=s name: STREHL, SCHUEBEL-HOPF & PARTNER, DE

R081 Change of applicant/patentee

Ref document number: 1949462

Country of ref document: EP

Owner name: TOYODA GOSEI CO., LTD., JP

Free format text: FORMER OWNER: SHOWA DENKO K.K., TOKIO/TOKYO, JP

Effective date: 20130109

R082 Change of representative

Ref document number: 1949462

Country of ref document: EP

Representative=s name: STREHL, SCHUEBEL-HOPF & PARTNER, DE

Effective date: 20130109