DE602004009641D1 - Optisches Phasenübergangsaufzeichnungsmedium und Herstellungsverfahren - Google Patents
Optisches Phasenübergangsaufzeichnungsmedium und HerstellungsverfahrenInfo
- Publication number
- DE602004009641D1 DE602004009641D1 DE602004009641T DE602004009641T DE602004009641D1 DE 602004009641 D1 DE602004009641 D1 DE 602004009641D1 DE 602004009641 T DE602004009641 T DE 602004009641T DE 602004009641 T DE602004009641 T DE 602004009641T DE 602004009641 D1 DE602004009641 D1 DE 602004009641D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- recording medium
- phase change
- optical phase
- change recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
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- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003279265 | 2003-07-24 | ||
JP2003279265 | 2003-07-24 |
Publications (2)
Publication Number | Publication Date |
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DE602004009641D1 true DE602004009641D1 (de) | 2007-12-06 |
DE602004009641T2 DE602004009641T2 (de) | 2008-11-06 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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DE602004032270T Expired - Lifetime DE602004032270D1 (de) | 2003-07-24 | 2004-07-23 | Optisches Phasenübergangsaufzeichnungsmedium und Herstellungsverfahren |
DE602004009641T Expired - Lifetime DE602004009641T2 (de) | 2003-07-24 | 2004-07-23 | Optisches Phasenübergangsaufzeichnungsmedium und Herstellungsverfahren |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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DE602004032270T Expired - Lifetime DE602004032270D1 (de) | 2003-07-24 | 2004-07-23 | Optisches Phasenübergangsaufzeichnungsmedium und Herstellungsverfahren |
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US (2) | US7608385B2 (de) |
EP (2) | EP1770697B1 (de) |
KR (1) | KR100671253B1 (de) |
CN (1) | CN100589191C (de) |
DE (2) | DE602004032270D1 (de) |
TW (4) | TW201506921A (de) |
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-
2004
- 2004-07-20 TW TW103131886A patent/TW201506921A/zh unknown
- 2004-07-20 TW TW103131887A patent/TW201506922A/zh unknown
- 2004-07-20 TW TW093121557A patent/TWI351696B/zh not_active IP Right Cessation
- 2004-07-20 TW TW100115084A patent/TWI469143B/zh not_active IP Right Cessation
- 2004-07-21 US US10/895,870 patent/US7608385B2/en active Active
- 2004-07-23 EP EP06025642A patent/EP1770697B1/de not_active Expired - Lifetime
- 2004-07-23 DE DE602004032270T patent/DE602004032270D1/de not_active Expired - Lifetime
- 2004-07-23 DE DE602004009641T patent/DE602004009641T2/de not_active Expired - Lifetime
- 2004-07-23 EP EP04254412A patent/EP1501090B1/de not_active Expired - Lifetime
- 2004-07-24 KR KR1020040058054A patent/KR100671253B1/ko active IP Right Grant
- 2004-07-26 CN CN200410058644A patent/CN100589191C/zh not_active Expired - Fee Related
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2009
- 2009-06-17 US US12/486,498 patent/US7967956B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1770697A1 (de) | 2007-04-04 |
TW201506922A (zh) | 2015-02-16 |
US20050019695A1 (en) | 2005-01-27 |
TW201506921A (zh) | 2015-02-16 |
KR20050012189A (ko) | 2005-01-31 |
KR100671253B1 (ko) | 2007-01-18 |
DE602004009641T2 (de) | 2008-11-06 |
EP1501090B1 (de) | 2007-10-24 |
EP1501090A1 (de) | 2005-01-26 |
CN100589191C (zh) | 2010-02-10 |
DE602004032270D1 (de) | 2011-05-26 |
US7608385B2 (en) | 2009-10-27 |
TW201145272A (en) | 2011-12-16 |
TWI351696B (en) | 2011-11-01 |
EP1770697B1 (de) | 2011-04-13 |
US7967956B2 (en) | 2011-06-28 |
CN1577549A (zh) | 2005-02-09 |
US20090250339A1 (en) | 2009-10-08 |
TW200506933A (en) | 2005-02-16 |
TWI469143B (zh) | 2015-01-11 |
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