DE3774098D1 - Plasmageraet. - Google Patents

Plasmageraet.

Info

Publication number: DE3774098D1
Authority: DE; Germany
Prior art keywords: plasma unit; plasma; unit
Prior art date: 1986-12-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8787311451T

Other languages

English (en)

Inventor

Seiichi C O Central R Nakamura

Satoshi C O Central R Nakayama

Takashi C O Central Rese Inoue

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Sumitomo Metal Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-12-29

Filing date

1987-12-24

Publication date

1991-11-28

1987-06-30 Priority claimed from JP16498287A external-priority patent/JPH0680640B2/ja

1987-06-30 Priority claimed from JP62164981A external-priority patent/JPH0732134B2/ja

1987-07-31 Priority claimed from JP19354287A external-priority patent/JP2576139B2/ja

1987-09-16 Priority claimed from JP62231343A external-priority patent/JPH06101443B2/ja

1987-12-24 Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd

1991-11-28 Application granted granted Critical

1991-11-28 Publication of DE3774098D1 publication Critical patent/DE3774098D1/de

2007-12-25 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
- H01L21/205—

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Spectroscopy & Molecular Physics (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)

DE8787311451T 1986-12-29 1987-12-24 Plasmageraet. Expired - Lifetime DE3774098D1 (de)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP30956086		1986-12-29
JP16498287A JPH0680640B2 (ja)	1987-06-30	1987-06-30	プラズマ装置
JP62164981A JPH0732134B2 (ja)	1986-12-29	1987-06-30	プラズマ装置
JP19354287A JP2576139B2 (ja)	1987-07-31	1987-07-31	プラズマ装置
JP62231343A JPH06101443B2 (ja)	1987-09-16	1987-09-16	プラズマ装置

Publications (1)

Publication Number	Publication Date
DE3774098D1 true DE3774098D1 (de)	1991-11-28

Family

ID=27528366

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787311451T Expired - Lifetime DE3774098D1 (de)	1986-12-29	1987-12-24	Plasmageraet.

Country Status (4)

Country	Link
US (2)	US5019117A (de)
EP (1)	EP0273741B1 (de)
KR (1)	KR920004912B1 (de)
DE (1)	DE3774098D1 (de)

Families Citing this family (47)

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US4911814A (en) *	1988-02-08	1990-03-27	Nippon Telegraph And Telephone Corporation	Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
EP0343017A3 (de) *	1988-05-20	1990-05-23	Nec Corporation	Gerät zum reaktiven Ionenätzen
EP0402867B1 (de) *	1989-06-15	1995-03-01	Sel Semiconductor Energy Laboratory Co., Ltd.	Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld
US5061838A (en) *	1989-06-23	1991-10-29	Massachusetts Institute Of Technology	Toroidal electron cyclotron resonance reactor
US5242663A (en) *	1989-09-20	1993-09-07	Sumitomo Electric Industries, Ltd.	Method of and apparatus for synthesizing hard material
JP2546405B2 (ja) *	1990-03-12	1996-10-23	富士電機株式会社	プラズマ処理装置ならびにその運転方法
JP2581255B2 (ja) *	1990-04-02	1997-02-12	富士電機株式会社	プラズマ処理方法
US5111111A (en) *	1990-09-27	1992-05-05	Consortium For Surface Processing, Inc.	Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
JP3020580B2 (ja) *	1990-09-28	2000-03-15	株式会社日立製作所	マイクロ波プラズマ処理装置
US5208512A (en) *	1990-10-16	1993-05-04	International Business Machines Corporation	Scanned electron cyclotron resonance plasma source
US5246532A (en) *	1990-10-26	1993-09-21	Mitsubishi Denki Kabushiki Kaisha	Plasma processing apparatus
JP2501948B2 (ja) *	1990-10-26	1996-05-29	三菱電機株式会社	プラズマ処理方法及びプラズマ処理装置
JP3042127B2 (ja) *	1991-09-02	2000-05-15	富士電機株式会社	酸化シリコン膜の製造方法および製造装置
US5308417A (en) *	1991-09-12	1994-05-03	Applied Materials, Inc.	Uniformity for magnetically enhanced plasma chambers
US5849136A (en) *	1991-10-11	1998-12-15	Applied Materials, Inc.	High frequency semiconductor wafer processing apparatus and method
US5662770A (en) *	1993-04-16	1997-09-02	Micron Technology, Inc.	Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
KR0170456B1 (ko) *	1993-07-16	1999-03-30	세끼사와 다까시	반도체 장치 및 그 제조방법
US5558843A (en) *	1994-09-01	1996-09-24	Eastman Kodak Company	Near atmospheric pressure treatment of polymers using helium discharges
SE9403988L (sv) *	1994-11-18	1996-04-01	Ladislav Bardos	Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning
US5698168A (en) *	1995-11-01	1997-12-16	Chorus Corporation	Unibody gas plasma source technology
GB2308338B (en) *	1995-12-22	1999-09-22	Motorola Ltd	Plasma etcher
US5993598A (en) *	1996-07-30	1999-11-30	The Dow Chemical Company	Magnetron
EP0908923B1 (de) *	1997-10-10	2003-04-02	European Community	Vorrichtung zur Erzeugung eines ausgedehnten Induktionsplasmas für Plasmabehandlungen
US7056416B2 (en) *	2002-02-15	2006-06-06	Matsushita Electric Industrial Co., Ltd.	Atmospheric pressure plasma processing method and apparatus
US7059268B2 (en) *	2002-12-20	2006-06-13	Tokyo Electron Limited	Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
CN100426472C (zh) *	2003-02-28	2008-10-15	富士通株式会社	耐腐蚀性膜及该膜和抗蚀剂图形和半导体器件的制造方法
EP2251671B1 (de)	2009-05-13	2017-04-26	SiO2 Medical Products, Inc.	Entgasungsverfahren zur Prüfung einer beschichteten Oberfläche
US9458536B2 (en)	2009-07-02	2016-10-04	Sio2 Medical Products, Inc.	PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en)	2010-05-12	2023-04-11	Sio2 Medical Products, Inc.	Syringe with PECVD lubrication
TWI434624B (zh) *	2010-07-02	2014-04-11	Ind Tech Res Inst	電子迴旋共振磁性模組與電子迴旋共振裝置
US9878101B2 (en)	2010-11-12	2018-01-30	Sio2 Medical Products, Inc.	Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en)	2011-04-01	2016-03-01	Sio2 Medical Products, Inc.	Vessels, contact surfaces, and coating and inspection apparatus and methods
CA2855353C (en)	2011-11-11	2021-01-19	Sio2 Medical Products, Inc.	Passivation, ph protective or lubricity coating for pharmaceutical package, coating process and apparatus
US11116695B2 (en)	2011-11-11	2021-09-14	Sio2 Medical Products, Inc.	Blood sample collection tube
US20130240147A1 (en) *	2012-03-19	2013-09-19	Sang Ki Nam	Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system
EP2846755A1 (de)	2012-05-09	2015-03-18	SiO2 Medical Products, Inc.	Saccharidschutzschicht für eine arzneimittelverpackung
US9664626B2 (en)	2012-11-01	2017-05-30	Sio2 Medical Products, Inc.	Coating inspection method
WO2014078666A1 (en)	2012-11-16	2014-05-22	Sio2 Medical Products, Inc.	Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en)	2012-11-30	2017-09-19	Sio2 Medical Products, Inc.	Controlling the uniformity of PECVD deposition
CA2892294C (en)	2012-11-30	2021-07-27	Sio2 Medical Products, Inc.	Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like
US9406487B2 (en) *	2012-12-28	2016-08-02	Sputtering Components, Inc.	Plasma enhanced chemical vapor deposition (PECVD) source
WO2014134577A1 (en)	2013-03-01	2014-09-04	Sio2 Medical Products, Inc.	Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en)	2013-03-11	2018-04-10	Sio2 Medical Products, Inc.	Trilayer coated pharmaceutical packaging with low oxygen transmission rate
JP6453841B2 (ja)	2013-03-11	2019-01-16	エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド	被覆包装
WO2014144926A1 (en)	2013-03-15	2014-09-18	Sio2 Medical Products, Inc.	Coating method
US11066745B2 (en)	2014-03-28	2021-07-20	Sio2 Medical Products, Inc.	Antistatic coatings for plastic vessels
CN108138316A (zh)	2015-08-18	2018-06-08	Sio2医药产品公司	具有低氧气传输速率的药物和其他包装

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2941559C2 (de) *	1979-10-13	1983-03-03	Messerschmitt-Bölkow-Blohm GmbH, 8000 München	Verfahren zum Abscheiden von Silizium auf einem Substrat
CA1159012A (en) *	1980-05-02	1983-12-20	Seitaro Matsuo	Plasma deposition apparatus
JPS56155535A (en) *	1980-05-02	1981-12-01	Nippon Telegr & Teleph Corp <Ntt>	Film forming device utilizing plasma
JPS5756036A (en) *	1980-09-20	1982-04-03	Mitsubishi Electric Corp	Plasma chemical vapor phase reactor
JPS5782955A (en) *	1980-11-12	1982-05-24	Hitachi Ltd	Microwave plasma generating apparatus
JPS5813627B2 (ja) *	1982-02-26	1983-03-15	株式会社日立製作所	マイクロ波プラズマエッチング装置
US4606802A (en) *	1983-12-21	1986-08-19	Hitachi, Ltd.	Planar magnetron sputtering with modified field configuration
JPH0693447B2 (ja) *	1983-12-23	1994-11-16	株式会社日立製作所	マイクロ波プラズマ処理装置
JPS60154620A (ja) *	1984-01-25	1985-08-14	Hitachi Ltd	マイクロ波プラズマ処理方法及び装置
JPS60218826A (ja) *	1984-04-13	1985-11-01	Fujitsu Ltd	薄膜形成方法
US4865712A (en) *	1984-05-17	1989-09-12	Varian Associates, Inc.	Apparatus for manufacturing planarized aluminum films
JPS6126597A (ja) *	1984-07-16	1986-02-05	Nippon Telegr & Teleph Corp <Ntt>	薄膜の形成方法及び形成装置
JPS6187868A (ja) *	1984-10-05	1986-05-06	Nippon Telegr & Teleph Corp <Ntt>	薄膜形成方法および装置
JPS6187884A (ja) *	1984-10-08	1986-05-06	Hitachi Ltd	有磁場マイクロ波プラズマ処理装置
JPS61125133A (ja) *	1984-11-22	1986-06-12	Hitachi Ltd	低温プラズマ電磁界制御機構
JPS61135126A (ja) *	1984-12-06	1986-06-23	Hitachi Ltd	プラズマ処理装置
JPS61172334A (ja) *	1985-01-28	1986-08-04	Mitsubishi Electric Corp	プラズマ処理装置
JPS61181534A (ja) *	1985-02-07	1986-08-14	Hitachi Ltd	プラズマ処理装置
JPS61213377A (ja) *	1985-03-18	1986-09-22	Hitachi Ltd	プラズマデポジシヨン法及びその装置
JPH0658909B2 (ja) *	1985-07-15	1994-08-03	株式会社日立製作所	低温プラズマによる成膜方法及び装置

1987
- 1987-12-24 DE DE8787311451T patent/DE3774098D1/de not_active Expired - Lifetime
- 1987-12-24 EP EP87311451A patent/EP0273741B1/de not_active Expired - Lifetime
- 1987-12-29 KR KR1019870015216A patent/KR920004912B1/ko not_active IP Right Cessation
1989
- 1989-06-12 US US07/364,585 patent/US5019117A/en not_active Expired - Lifetime
- 1989-09-29 US US07/414,511 patent/US5016564A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0273741A2 (de)	1988-07-06
KR920004912B1 (ko)	1992-06-22
KR880008711A (ko)	1988-08-31
EP0273741A3 (en)	1989-07-19
US5019117A (en)	1991-05-28
US5016564A (en)	1991-05-21
EP0273741B1 (de)	1991-10-23

Publication	Publication Date	Title
DE3774098D1 (de)	1991-11-28	Plasmageraet.
DE3774909D1 (de)	1992-01-16	Antitumormittel.
DE3775679D1 (de)	1992-02-13	Vernebler.
DE3767169D1 (de)	1991-02-14	Sportschuh.
ES2019949B3 (es)	1991-07-16	Propanaminas 3-ariloxi-3-sustituidas.
FI863573A (fi)	1988-03-06	Benomplaceringsimplant.
DE3779761D1 (de)	1992-07-16	Abseilgeraet.
DE3771918D1 (de)	1991-09-12	Chinolinamide.
DE3781587D1 (de)	1992-10-15	Plasmaeinschlusssystem.
DE3785294D1 (de)	1993-05-13	Neigungsmesser.
DE3786679D1 (de)	1993-09-02	Schmitt-triggerschaltung.
DE3773636D1 (de)	1991-11-14	Saeurebeschleunigte hydrocarboxilierung.
FI880633A (fi)	1988-02-11	Kranfoersedd skogsmaskin.
FI860632A0 (fi)	1986-02-12	Fiberoptisk temperaturalarm.
FI863059A (fi)	1988-01-26	Roerklammer.
DE3771271D1 (de)	1991-08-14	Fluorphthalimide.
FI860054A0 (fi)	1986-01-07	Motionsanordning.
DE3779382D1 (de)	1992-07-02	3-6-diphenylpyridazine.
FI860046A0 (fi)	1986-01-06	Foerlaengningsanordning foer traefaner.
DE3766410D1 (de)	1991-01-10	Methylalkylcyclosiloxane.
DE3770459D1 (de)	1991-07-04	3-halogensuccinimide.
FI870205A (fi)	1987-07-21	Torvupptagningsmaskin.
DE3777013D1 (de)	1992-04-09	Platteneinheit.
IT8622715A0 (it)	1986-12-16	Termofiltrazione di plasma.
FI851776L (fi)	1986-11-07	Elkandelaber.

Legal Events

Date	Code	Title	Description
1992-11-19	8364	No opposition during term of opposition
2004-02-05	8327	Change in the person/name/address of the patent owner	Owner name: TOKYO ELECTRON LIMITED, TOKIO/TOKYO, JP
2005-10-13	8339	Ceased/non-payment of the annual fee