DE19808206A1 - Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etching - Google Patents
Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etchingInfo
- Publication number
- DE19808206A1 DE19808206A1 DE19808206A DE19808206A DE19808206A1 DE 19808206 A1 DE19808206 A1 DE 19808206A1 DE 19808206 A DE19808206 A DE 19808206A DE 19808206 A DE19808206 A DE 19808206A DE 19808206 A1 DE19808206 A1 DE 19808206A1
- Authority
- DE
- Germany
- Prior art keywords
- arrangement
- wafers
- substrates
- pressure gas
- gas discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 235000012431 wafers Nutrition 0.000 title claims description 33
- 238000005530 etching Methods 0.000 title claims description 4
- 238000004140 cleaning Methods 0.000 title claims description 3
- 208000028659 discharge Diseases 0.000 title abstract 3
- 239000004922 lacquer Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract 12
- 238000000034 method Methods 0.000 claims description 22
- 239000003973 paint Substances 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000002925 chemical effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 244000097592 Ptelea trifoliata Species 0.000 description 1
- 235000010984 Ptelea trifoliata ssp. pallida var. lutescens Nutrition 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Die Behandlung von Wafern für die (Mikro)elektronikfertigung mittels Niederdruck- Gasentladungen gehört seit Jahren zu den Standard-Produktionstechniken. Wich tige Prozeßschritte sind hierbei die Entfernung von Lacken durch Veraschung und das Ätzen von Oberflächen. Mit der Vergrößerung der Wafer auf 300 mm Durch messer treten Probleme der Skalierung und der Homogenität auf. Weiterhin führen in jüngerer Zeit neue Entwicklungen auf dem Gebiet des Packaging (Ball Grid Arrays, Flip-Chip) zu neuen, erweiterten Anforderungen, zum Beispiel das Reinigen von leitfähigen Flächen oder die Entfernung von Lacken auf der Waferrückseite ohne Schädigung der Wafervorderseite.Treatment of wafers for (micro) electronics manufacturing using low pressure Gas discharges have been standard production techniques for years. Wich The process steps involved are the removal of paints by ashing and etching surfaces. With the enlargement of the wafer to 300 mm through Knife problems of scaling and homogeneity arise. Continue to lead more recently new developments in the field of packaging (Ball Grid Arrays, flip chip) for new, expanded requirements, for example cleaning of conductive surfaces or the removal of paint on the back of the wafer without damage to the front of the wafer.
Die vorliegende Erfindung beschreibt eine neue Vorrichtung, die das Ko sten/Nutzenverhältnis bei herkömmlichen Wafer-Ashprozessen wesentlich verbes sert, die Skalierbarkeit auf größere Wafer vereinfacht und die Erfüllung spezieller Anforderungen aus dem Bereich des Packaging ermöglicht.The present invention describes a new device, the Ko Most benefit ratio in conventional wafer ash processes significantly improved sert, simplifies scalability to larger wafers and fulfills special requirements Packaging requirements.
Zum Ätzen von Wafern wird überwiegend das Reaktive Ionenätzen (RIE) verwen det, dessen Prinzip in Fig. 1 dargestellt ist. Ein Wafer (1) liegt auf einer Elektrode (2), die innerhalb einer Vakuumkammer (3) mit hochfrequenter elektrischer Energie beaufschlagt wird. Hierdurch wird eine Niederdruck-Gasentladung (Plasma) er zeugt, in der die eingelassenen Prozeßgase aktiviert werden. Diese Spezies ge langen zusammen mit beschleunigten Ionen auf die Waferoberfläche und erzielen die gewünschten chemischen und physikalischen Wirkungen. Ein weiteres Verfah ren mit Plattenreaktoren ist das Plasmaätzen, wie es in Fig. 2 dargestellt ist und häufig zum Entfernen von Lacken verwendet wird. Hier liegt der Wafer auf Masse potential, die elektrische Energie wird einer Elektrode (2) zugeführt. Bei dieser An ordnung dominiert wegen des geringen Ionenbeschusses die chemische Wirkung.Reactive ion etching (RIE), the principle of which is shown in FIG. 1, is predominantly used for etching wafers. A wafer ( 1 ) lies on an electrode ( 2 ) which is subjected to high-frequency electrical energy within a vacuum chamber ( 3 ). As a result, a low-pressure gas discharge (plasma) is generated, in which the let-in process gases are activated. These species, along with accelerated ions, reach the wafer surface and achieve the desired chemical and physical effects. Another process with plate reactors is plasma etching, as shown in FIG. 2, and is often used to remove lacquers. Here the wafer is at ground potential, the electrical energy is fed to an electrode ( 2 ). With this arrangement, the chemical effect dominates due to the low ion bombardment.
Bei diesen beiden Single-Wafer-Anordnungen wird nur die Waferoberseite behan delt. Falls die Rückseite behandelt werden soll, liegt der Wafer mit der aktiven Seite auf der Auflage und den Handlingeinrichtungen, was zur Vermeidung von Schäden hier ein neues, aufwendigen Design erfordern würde.With these two single wafer arrangements, only the top of the wafer is exposed delt. If the back is to be treated, the wafer with the active one is on Page on the edition and the handling equipment, what to avoid Damage here would require a new, elaborate design.
Da beide Anordnungen nur einen Wafer zu einer Zeit behandeln können, ist der Durchsatz gering, was zu hohen Stückkosten führt. Produktionsanlagen werden meist mit automatischen Handlingsystemen ausgerüstet, was die Investitionen in die Höhe treibt. Für einfachere Aufgaben wird daher oft eine Batchanlage verwen det (Fig. 3). Hier werden mehrere Wafer gleichzeitig prozessiert, die mit einer Kas sette oder einem Quarzboot in die Anlage eingebracht werden. Das Plasma wird mittels einer HF- oder Mikrowelleneinkopplung erzeugt, die reaktives Spezies ge langen auf die Waferoberfläche und erzeugen die gewünschte Wirkung. Diese Anlagen sind preisgünstig und arbeiten wirtschaftlich. Die Prozeßführung ist jedoch eingeschränkt, wodurch nur wenige Anwendungen möglich sind. Die Vergrößerung der Waferabmessungen führt hier zu Homogenitätsproblemen. Eine selektive Be handlung einer Waferseite ist nicht möglich.Because both arrangements can only treat one wafer at a time, the throughput is low, which leads to high unit costs. Production systems are usually equipped with automatic handling systems, which drives up investments. A batch system is therefore often used for simpler tasks ( FIG. 3). Here, several wafers are processed at the same time, which are inserted into the system with a cassette or a quartz boat. The plasma is generated by means of RF or microwave coupling, the reactive species reach the wafer surface and produce the desired effect. These systems are inexpensive and work economically. However, the process control is limited, which means that only a few applications are possible. The enlargement of the wafer dimensions leads to problems of homogeneity. A selective treatment of a wafer side is not possible.
Erfindungsgemäß wird diese Problematik durch eine Anordnung gelöst, wie sie in Bild 4 dargestellt ist. Die Wafer (1) werden im Batch in einer Kassette, einem Quarzboot oder einem ähnlichen Halter in die Vakuumkammer (3) eingebracht. According to the invention, this problem is solved by an arrangement as shown in Figure 4. The wafers ( 1 ) are introduced into the vacuum chamber ( 3 ) in a batch in a cassette, a quartz boat or a similar holder.
Hier befindet sich eine bewegliche Anordnung aus Elektrodenplatten (4, 5), die zwi schen die Wafer gebracht werden. Diese Elektroden können über die Anschlüsse A und B mit elektrischen Versorgungen verbunden werden. Die Elektroden haben jeweils zueinander einen kleinen Abstand, der unterhalb des Dunkelraumabstan des liegt, die Elektrode (5) befindet sich ebenfalls jeweils in einem entsprechend kleinem Abstand zum Wafer, ohne diesen zu berühren.Here is a movable arrangement of electrode plates ( 4 , 5 ), which are brought between the wafers. These electrodes can be connected to electrical supplies via connections A and B. The electrodes are at a small distance from each other, which is below the dark space, the electrode ( 5 ) is also at a correspondingly small distance from the wafer without touching it.
Die Waferkassette wird vorteilhafterweise leicht geneigt angeordnet, dadurch lie gen die Wafer definiert auf jeweils einer Seite der Kassettenaufnahmen an.The wafer cassette is advantageously arranged slightly inclined, thereby lying The wafers are defined on one side of the cassette holders.
Wird jetzt eine elektrische Versorgung, üblicherweise mit Hochfrequenz, an die Elektroden gelegt so bildet sich jeweils im Raum zwischen den Elektroden (4) und den Wafern (1) ein Plasma aus. Es entsteht im Prinzip ein Stapel aus Plattenreak toren. Wird A mit HF und B mit Masse verbunden, so liegt der RIE-Typ vor, wenn A mit Masse und B mit HF verbunden wird, so handelt es sich um Plasmaätzen.If an electrical supply, usually at high frequency, is now applied to the electrodes, a plasma is formed in the space between the electrodes ( 4 ) and the wafers ( 1 ). In principle, a stack of plate reactors is created. If A is connected to HF and B to ground, the RIE type is present, if A is connected to ground and B to HF, it is plasma etching.
Der Abstand der Wafer in der Kassette ist hierfür groß genug zu wählen.The spacing of the wafers in the cassette must be chosen large enough for this.
Die Gaszuführung kann z. B. über Hohlräume in den Elektrodenplatten erfolgen, für die Gasverteilung werden in diesem Fall vorteilhafterweise Austrittsbohrungen in den Elektrodenplatten (4) vorgesehen, mit deren Anordnung die Verteilung opti miert werden kann.The gas supply can, for. B. via cavities in the electrode plates, for the gas distribution are advantageously provided in this case outlet holes in the electrode plates ( 4 ), with whose arrangement the distribution can be optimized.
Zum Be- und Entladen werden die Elektroden (4, 5) aus dem Waferbereich heraus verschoben, wie es in Fig. 5 dargestellt ist. Jetzt können die Wafer komplett mit der Kassette entnommen werden, worauf eine neue Kassette beladen wird. For loading and unloading, the electrodes ( 4 , 5 ) are moved out of the wafer area, as shown in FIG. 5. Now the wafers can be removed completely with the cassette, after which a new cassette is loaded.
Diese Anordnung kombiniert weitgehend die Vorteile eines Plattenreaktors mit de
nen einer Batchanlage:
Gleichzeitige Behandlung mehrerer Wafer in einer Kassette
Geringe Kosten
Einfache und billige Beladung mit Kassette
Gute Homogenität durch Elektroden und Gasverteilungskontrolle
Prozeßführung ähnlich wie beim PlattenreaktorThis arrangement largely combines the advantages of a plate reactor with a batch system:
Simultaneous treatment of several wafers in one cassette
Low cost
Easy and cheap loading with cassette
Good homogeneity thanks to electrodes and gas distribution control
Process control similar to that of the plate reactor
Weiterhin ist es möglich, definiert eine Waferseite selektiv zu behandeln ohne die andere Seite zu beschädigen, da keine Berührung erfolgt und das Plasma auf der der Elektrode (5) zugewandten Seite im geringen Abstand abgeschirmt wird.Furthermore, it is possible to selectively treat one side of the wafer without damaging the other side, since there is no contact and the plasma is shielded at a short distance on the side facing the electrode ( 5 ).
Claims (11)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19808206A DE19808206A1 (en) | 1998-02-27 | 1998-02-27 | Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19808206A DE19808206A1 (en) | 1998-02-27 | 1998-02-27 | Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19808206A1 true DE19808206A1 (en) | 1999-09-02 |
Family
ID=7859043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19808206A Withdrawn DE19808206A1 (en) | 1998-02-27 | 1998-02-27 | Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etching |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE19808206A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008019023A1 (en) * | 2007-10-22 | 2009-04-23 | Centrotherm Photovoltaics Ag | Vacuum continuous flow system for the processing of substrates |
| EP3246935A1 (en) | 2016-05-20 | 2017-11-22 | Meyer Burger (Germany) AG | Plasma processing device with a contactless rf voltage feed to a movable plasma electrode unit and method for operating such a plasma processing device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
| EP0143479A1 (en) * | 1983-10-19 | 1985-06-05 | Johannes Hendrikus Leonardus Hanssen | Plasma-stimulated chemical vapour deposition device and, in particular, a substrate supporting and electrode disposition and associated components |
| DD226306A1 (en) * | 1984-07-30 | 1985-08-21 | Mikroelektronik Zt Forsch Tech | DEVICE FOR PLASMA-CHEMICAL STEAM PHASE DEPOSITION |
| US4633811A (en) * | 1984-03-28 | 1987-01-06 | Fuji Electric Co., Ltd. | Plasma CVD apparatus |
| US5061359A (en) * | 1985-01-17 | 1991-10-29 | International Business Machines Corporation | Plasma processing apparatus including three bus structures |
| US5225375A (en) * | 1991-05-20 | 1993-07-06 | Process Technology (1988) Limited | Plasma enhanced chemical vapor processing of semiconductor substrates |
| US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
-
1998
- 1998-02-27 DE DE19808206A patent/DE19808206A1/en not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
| EP0143479A1 (en) * | 1983-10-19 | 1985-06-05 | Johannes Hendrikus Leonardus Hanssen | Plasma-stimulated chemical vapour deposition device and, in particular, a substrate supporting and electrode disposition and associated components |
| US4633811A (en) * | 1984-03-28 | 1987-01-06 | Fuji Electric Co., Ltd. | Plasma CVD apparatus |
| DD226306A1 (en) * | 1984-07-30 | 1985-08-21 | Mikroelektronik Zt Forsch Tech | DEVICE FOR PLASMA-CHEMICAL STEAM PHASE DEPOSITION |
| US5061359A (en) * | 1985-01-17 | 1991-10-29 | International Business Machines Corporation | Plasma processing apparatus including three bus structures |
| US5225375A (en) * | 1991-05-20 | 1993-07-06 | Process Technology (1988) Limited | Plasma enhanced chemical vapor processing of semiconductor substrates |
| US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
Non-Patent Citations (2)
| Title |
|---|
| 6-128747 A.,C-1236,Aug. 11,1994,Vol.18,No.430 * |
| JP Patents Abstracts of Japan: 1-111871 A.,C- 623,July 27,1989,Vol.13,No.336 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008019023A1 (en) * | 2007-10-22 | 2009-04-23 | Centrotherm Photovoltaics Ag | Vacuum continuous flow system for the processing of substrates |
| DE102008019023B4 (en) * | 2007-10-22 | 2009-09-24 | Centrotherm Photovoltaics Ag | Vacuum continuous flow system for the processing of substrates |
| EP3246935A1 (en) | 2016-05-20 | 2017-11-22 | Meyer Burger (Germany) AG | Plasma processing device with a contactless rf voltage feed to a movable plasma electrode unit and method for operating such a plasma processing device |
| WO2017198751A1 (en) | 2016-05-20 | 2017-11-23 | Meyer Burger (Germany) Ag | Plasma treatment device having a contactless hf voltage supply to a movable plasma electrode unit, and method for operating such a plasma treatment device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8139 | Disposal/non-payment of the annual fee |